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41. 发明授权

US09368377B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US09368377B2
公开(公告)日：2016-06-14
申请号：US11836219
申请日：2007-08-09
申请人： Takumi Tandou , Kenetsu Yokogawa , Masaru Izawa
发明人： Takumi Tandou , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： H01L21/67 , H01L21/683 , H01J37/32 , C23C16/46 , F25B41/06
CPC分类号： H01L21/67109 , C23C16/463 , F25B41/062 , H01J37/32431 , H01J2237/2001 , H01L21/6831 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a temperature control unit for an electrostatic adsorption electrode that is capable of controlling the wafer temperature rapidly over a wide temperature range without affecting in-plane uniformity while high heat input etching is conducted with high wafer bias power applied. A refrigerant flow path provided in the electrostatic adsorption electrode serves as an evaporator. The refrigerant flow path is connected to a compressor, a condenser, and a first expansion valve to form a direct expansion type refrigeration cycle. A second expansion valve is installed between the electrostatic adsorption electrode and the compressor to adjust the flow rate of a refrigerant. This makes it possible to compress the refrigerant in the refrigerant flow path of the electrostatic adsorption electrode and adjust the wafer temperature to a high level by raising the refrigerant evaporation temperature. Further, a thin-walled cylindrical refrigerant flow path is employed so that the thin-walled cylinder is deformed only slightly by the refrigerant pressure.
摘要翻译：本发明提供了一种用于静电吸附电极的温度控制单元，其能够在宽的温度范围内快速控制晶片温度，而不会在施加高晶片偏置功率的同时进行高热输入蚀刻的同时不影响面内均匀性。设置在静电吸附电极中的制冷剂流路用作蒸发器。制冷剂流路连接到压缩机，冷凝器和第一膨胀阀，以形成直接膨胀型制冷循环。第二膨胀阀安装在静电吸附电极和压缩机之间，以调节制冷剂的流量。这使得可以压缩静电吸附电极的制冷剂流路中的制冷剂，并且通过提高制冷剂蒸发温度将晶片温度调节到高水平。此外，采用薄壁圆柱形制冷剂流动路径，使得薄壁圆筒仅由制冷剂压力略微变形。

42. 发明授权

US06977229B2 Manufacturing method for semiconductor devices 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US06977229B2
公开(公告)日：2005-12-20
申请号：US10460155
申请日：2003-06-13
申请人： Kenetsu Yokogawa , Yoshinori Momonoi , Masaru Izawa
发明人： Kenetsu Yokogawa , Yoshinori Momonoi , Masaru Izawa
IPC分类号： H01L21/304 , H01L21/00 , H01L21/306 , H01L21/311 , H01L21/768 , H01L21/302
CPC分类号： H01L21/0206 , H01L21/02063 , H01L21/02071 , H01L21/31116 , H01L21/31138 , H01L21/67028 , H01L21/76807 , H01L21/76814
摘要： The present invention is provided to prevent yield reduction of semiconductor device in dry cleaning of semiconductor device manufacturing process. The electric action and chemical action due to plasma of a first gas generated by means of a plasma generating means and the physical action due to viscous friction force of high speed gas flow generated by means of a planar pad that is brought close to the main surface of a wafer are applied together for cleaning the main surface of the wafer. After cleaning, the wafer is exposed to plasma of a second gas in the same vacuum chamber and then transferred to the atmosphere.
摘要翻译：提供本发明以防止半导体器件制造工艺的干洗中的半导体器件的产量降低。由于等离子体发生装置产生的第一气体的等离子体引起的电作用和化学作用以及由靠近主表面的平板焊接产生的高速气流的粘性摩擦力引起的物理作用一起施加在一起以清洁晶片的主表面。在清洁之后，将晶片暴露于相同真空室中的第二气体的等离子体，然后转移到大气中。

43. 发明授权

US06629538B2 Method for cleaning semiconductor wafers in a vacuum environment 有权
标题翻译：在真空环境中清洁半导体晶片的方法
公开(公告)号：US06629538B2
公开(公告)日：2003-10-07
申请号：US09811652
申请日：2001-03-20
申请人： Kenetsu Yokogawa , Yoshinori Momonoi , Masaru Izawa , Shinichi Tachi
发明人： Kenetsu Yokogawa , Yoshinori Momonoi , Masaru Izawa , Shinichi Tachi
IPC分类号： B08B600
CPC分类号： H01L21/02046 , B08B1/00 , B08B1/04 , B08B5/02 , B08B7/0035 , H01L21/67028
摘要： A method of dry cleaning surfaces of a semiconductor wafer includes the steps of placing a processed wafer in a vacuum environment and positioning a pad near each of a front surface and a back surface of the wafer. Cleaning gas is injected into a small clearance formed between each pad and the front and rear surfaces to generate a high-speed gas flow along the surface of the wafer. Particles left at the surfaces of the processed wafer are physically cleaned and removed with the high-speed gas flow. In order to assist this physical cleaning action, it is also possible to apply either a chemical cleaning method or an electrical cleaning method under application of plasma.
摘要翻译：半导体晶片的干式清洗表面的方法包括以下步骤：将处理的晶片放置在真空环境中并将衬垫定位在晶片的前表面和后表面中的每一个周围。将清洁气体注入到每个垫与前表面和后表面之间形成的小间隙中，以产生沿着晶片表面的高速气流。留在处理过的晶片表面的颗粒被物理清洗并用高速气流除去。为了辅助这种物理清洁动作，也可以在施加等离子体的情况下应用化学清洗方法或电气清洁方法。

44. 发明授权

US06573190B1 Dry etching device and dry etching method 失效
标题翻译：干蚀刻装置和干法蚀刻法
公开(公告)号：US06573190B1
公开(公告)日：2003-06-03
申请号：US09856264
申请日：2001-05-18
申请人： Masaru Izawa , Shinichi Tachi , Kenetsu Yokogawa , Nobuyuki Negishi , Naoyuki Kofuji
发明人： Masaru Izawa , Shinichi Tachi , Kenetsu Yokogawa , Nobuyuki Negishi , Naoyuki Kofuji
IPC分类号： H01L2100
CPC分类号： H01L21/32136 , H01J37/321 , H01J37/3266 , H01L21/3065 , H01L21/31116 , H01L21/32137
摘要： A dry etching apparatus and method which can uniformly and stably generate a high-density plasma over a wide range, and can cope with increase of wafer diameter and making the pattern finer in etch processing of the fine pattern of a semiconductor device. The apparatus and method enables a magnitude of a magnetic field to be cyclically modulated when a substrate to be treated is etch processed. The cyclical modulation may be effected by cyclically modulating a coil current flowing to a solenoid coil.
摘要翻译：可以在宽范围内均匀稳定地产生高密度等离子体的干蚀刻装置和方法，并且可以应对晶片直径的增加，并使得图案在半导体器件的精细图案的蚀刻处理中更细。当要处理的衬底被蚀刻处理时，该装置和方法使得可以循环调制磁场的大小。循环调制可以通过循环调制流向螺线管线圈的线圈电流来实现。

45. 发明授权

US06475918B1 Plasma treatment apparatus and plasma treatment method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US06475918B1
公开(公告)日：2002-11-05
申请号：US09679348
申请日：2000-10-05
申请人： Masaru Izawa , Kenetsu Yokogawa , Nobuyuki Negishi , Yoshinori Momonoi , Shinichi Tachi
发明人： Masaru Izawa , Kenetsu Yokogawa , Nobuyuki Negishi , Yoshinori Momonoi , Shinichi Tachi
IPC分类号： H01L2100
CPC分类号： H01J37/32678 , H01J37/32422 , H01L21/67069 , H01L21/76802
摘要： An etching method capable of obtaining a fine fabricated shape, particularly, a vertical fabricated shape with less bowing upon fabrication of insulation films in the production of semiconductors, the method comprising controlling the incident amount of O, F or N radicals, gas flow rate or consumption amount of O, F and N on the inner wall surface with etching time to suppress excessive O, F and N which become excessive in the initial stage of etching, the method also including control for the flow rate or the consumption amount based on the result of measurement for plasmas during etching so as to obtain a stable etching shape. Since bowing can be reduced upon fabrication of insulation film hole and insulation film while maintaining the etching rate and the selectivity, finer semiconductor device can be produced easily.
摘要翻译：一种蚀刻方法，其能够在制造半导体时获得精细的制造形状，特别是制造绝缘膜时的垂直制造形状，该方法包括控制O，F或N自由基的入射量，气体流速或用蚀刻时间对内壁表面的O，F和N的消耗量进行蚀刻，以抑制在蚀刻的初始阶段过度的过量的O，F和N，该方法还包括基于流量或消耗量的控制在蚀刻期间等离子体的测量结果，以获得稳定的蚀刻形状。由于在保持蚀刻速率和选择性的同时，在制造绝缘膜孔和绝缘膜时可以减少弯曲，因此可以容易地制造更细的半导体器件。

46. 发明申请

US20090277883A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 失效
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20090277883A1
公开(公告)日：2009-11-12
申请号：US12193117
申请日：2008-08-18
申请人： Takumi Tandou , Kenetsu Yokogawa , Masaru Izawa
发明人： Takumi Tandou , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： B23K10/00
CPC分类号： H01L21/67109 , H01J37/32623 , H01J2237/2001
摘要： The present invention provides means for controlling the temperature of a semiconductor wafer rapidly and uniformly in plane during etching processing by a large quantity of input heat by use of a refrigerating system by the heat of evaporation. A ring-shaped refrigerant passage is formed in a sample stand. Since the heat transfer rate and pressure loss of a refrigerant increase from a refrigerant supply port to a refrigerant ejection port as dryness degrees increase, these must be restricted. Therefore, constructionally, a supply refrigerant quantity is controlled to prevent the refrigerant from completely evaporating within the refrigerant passage, and the sectional areas of the refrigerant passage increase successively from a first passage to a third passage.
摘要翻译：本发明提供了通过利用通过蒸发热使用制冷系统的大量输入热量来在蚀刻处理期间快速且均匀地控制半导体晶片的温度的装置。环状制冷剂通道形成在样品台中。由于制冷剂的传热速度和压力损失随着制冷剂供给口向制冷剂喷出口的增加而增加，因此必须限制。因此，在结构上，控制供给制冷剂量以防止制冷剂在制冷剂通道内完全蒸发，并且制冷剂通道的截面积从第一通道连续升高到第三通道。

47. 发明授权

US06643893B2 Apparatus for cleaning semiconductor wafers in a vacuum environment 失效
标题翻译：用于在真空环境中清洁半导体晶片的装置
公开(公告)号：US06643893B2
公开(公告)日：2003-11-11
申请号：US09809202
申请日：2001-03-16
申请人： Yoshinori Momonoi , Kenetsu Yokogawa , Masaru Izawa , Shinichi Tachi
发明人： Yoshinori Momonoi , Kenetsu Yokogawa , Masaru Izawa , Shinichi Tachi
IPC分类号： B08B1100
CPC分类号： H01L21/67028 , B08B5/02 , B08B7/0035
摘要： A dry cleaning device, wherein a pad is moved towards a surface of a wafer, cleaning gas is injected into a space formed between the pad and the wafer to generate a high-speed gas flow along the surface of the wafer whereby particles left on the surface of the wafer are removed with the high-speed gas flow. In addition, in order to assist this physical cleaning action, either a chemical or an electrical cleaning method such as a plasma additionally may be used.
摘要翻译：一种干洗装置，其中衬垫朝向晶片的表面移动，清洁气体被注入到形成在衬垫和晶片之间的空间中，以沿着晶片的表面产生高速气流，从而颗粒留在用高速气流除去晶片的表面。此外，为了辅助这种物理清洁动作，可以使用诸如等离子体的化学或电清洁方法。

48. 发明授权

US08142567B2 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US08142567B2
公开(公告)日：2012-03-27
申请号：US12392127
申请日：2009-02-25
申请人： Hiroyuki Kobayashi , Kenji Maeda , Masaru Izawa , Makoto Nawata
发明人： Hiroyuki Kobayashi , Kenji Maeda , Masaru Izawa , Makoto Nawata
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/4412
摘要： A vacuum processing apparatus includes a member having a gas passage formed in a center between the pressure adjusting valve of an exhaust system and a turbo-molecular pump, and a particle dispersion prevention unit having plural stationary blades formed to be tilted in a direction opposite the direction of the rotary blade of the turbo-molecular pump on the outer circumference of the member.
摘要翻译：真空处理装置包括具有形成在排气系统的压力调节阀和涡轮分子泵之间的中心的气体通道的构件和具有多个静止叶片的颗粒分散防止单元，所述多个固定叶片形成为沿相反方向倾斜涡轮分子泵的旋转叶片在构件的外周上的方向。

49. 发明申请

US20100025369A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20100025369A1
公开(公告)日：2010-02-04
申请号：US12202642
申请日：2008-09-02
申请人： Nobuyuki NEGISHI , Masaru Izawa , Kenji Maeda
发明人： Nobuyuki NEGISHI , Masaru Izawa , Kenji Maeda
IPC分类号： G01L11/02
CPC分类号： H01J37/32642 , H01J37/32935 , H01J37/3299
摘要： To monitor the thickness of a focus ring consumed during wafer processing. A plasma processing apparatus includes a vacuum chamber 1, workpiece mounting means 5, high frequency electric power introducing means 4 and radio-frequency bias electric power introducing means 7 and processes a surface of a workpiece 6 using a plasma that is converted from a gas introduced into the vacuum chamber 1 by the action of a high frequency electric power introduced by the high frequency electric power introducing means 4. The plasma processing apparatus further includes an annular member 11 surrounding the workpiece 6 mounted on the workpiece mounting means 5, and a pair of tubes having an aspect ratio of 3 or higher and disposed on a side wall of the vacuum chamber 1 to face each other. Each tube is vacuum-sealed at a tip end thereof with a glass material. One of the tubes has a light source 15 disposed facing to the interior of the vacuum chamber on the atmosphere side of the glass material, and the other tube has light receiving means 16 disposed facing to the interior of the vacuum chamber on the atmosphere side of the glass material. The light receiving means 16 receives light passing across the surface of the annular member 11.
摘要翻译：监视在晶片处理期间消耗的聚焦环的厚度。等离子体处理装置包括真空室1，工件安装装置5，高频电力引入装置4和射频偏置电力引入装置7，并使用从引入的气体转换的等离子体处理工件6的表面通过高频电力引入装置4引入的高频电力进入真空室1.等离子体处理装置还包括环绕安装在工件安装装置5上的工件6的环形构件11和一对的长径比为3或更高并且设置在真空室1的侧壁上以彼此面对的管。每个管在其末端用玻璃材料进行真空密封。其中一个管具有面向玻璃材料的气氛侧的真空室的内部设置的光源15，另一个管具有光接收装置16，该接收装置16面对真空室的大气侧的内部玻璃材料。光接收装置16接收穿过环形构件11的表面的光。

50. 发明申请

US20090060702A1 METHOD FOR TRANSPORTING OBJECT TO BE PROCESSED IN SEMICONDUCTOR MANUFACTURING APPARATUS 审中-公开
标题翻译：运输半导体制造设备中要处理的物体的方法
公开(公告)号：US20090060702A1
公开(公告)日：2009-03-05
申请号：US12035780
申请日：2008-02-22
申请人： Hiroyuki Kobayashi , Kenji Maeda , Masaru Izawa
发明人： Hiroyuki Kobayashi , Kenji Maeda , Masaru Izawa
IPC分类号： H01L21/673
CPC分类号： H01L21/67748 , H01L21/67017 , H01L21/6719 , H01L21/67196
摘要： In a semiconductor manufacturing apparatus including a processing chamber, means for supplying gas to the processing chamber, evacuating means for decompressing the processing chamber, a transport chamber, means for supplying gas to the transport chamber, and evacuating means for decompressing the transport chamber, the pressure in the processing chamber is 10 to 50 Pa, the pressure in the transport chamber is set to positive pressure to the processing chamber, the differential pressure between the processing chamber and the transport chamber is 10 Pa or less, and the flow rate of the gas supplied to the processing chamber is twice or more the flow rate of gas supplied to the transport chamber.
摘要翻译：在包括处理室的半导体制造装置中，向处理室供给气体的装置，用于对处理室进行减压的排气装置，输送室，向输送室供给气体的装置，以及用于使输送室减压的排气装置，处理室中的压力为10〜50Pa，输送室内的压力被设定为处理室的正压，处理室与输送室之间的压差为10Pa以下，流量为供给到处理室的气体是供给至运送室的气体的流量的两倍以上。

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