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41. 发明授权

US06574250B2 Laser system and method for processing a memory link with a burst of laser pulses having ultrashort pulse widths 有权
公开(公告)号：US06574250B2
公开(公告)日：2003-06-03
申请号：US09757418
申请日：2001-01-09
申请人： Yunlong Sun , Edward J. Swenson , Richard S. Harris
发明人： Yunlong Sun , Edward J. Swenson , Richard S. Harris
IPC分类号： H01S310
CPC分类号： H01L23/5258 , B23K26/04 , B23K26/0622 , B23K26/0624 , G03F7/70041 , G03F7/70725 , H01L21/76894 , H01L2924/0002 , H01L2924/00
摘要： A burst (50) of ultrashort laser pulses (52) is employed to sever a conductive link (22) in a nonthermal manner and offers a wider processing window, eliminates undesirable HAZ effects, and achieves superior severed link quality. The duration of the burst (50) is preferably in the range of 10 ns to 500 ns; and the pulse width of each laser pulse (52) within the burst (50) is generally shorter than 25 ps, preferably shorter than or equal to 10 ps, and most preferably about 10 ps to 100 fs or shorter. The burst (50) can be treated as a single “pulse” by conventional laser positioning systems (62) to perform on-the-fly link removal without stopping whenever the laser system (60) fires a burst (50) of laser pulses (52) at each link (22). Conventional wavelengths or their harmonics can be employed.

42. 发明授权

US08338746B2 Method for processing a memory link with a set of at least two laser pulses 有权
标题翻译：一种用一组至少两个激光脉冲处理存储器连接的方法
公开(公告)号：US08338746B2
公开(公告)日：2012-12-25
申请号：US12705433
申请日：2010-02-12
申请人： Yunlong Sun , Edward J. Swenson , Richard S. Harris
发明人： Yunlong Sun , Edward J. Swenson , Richard S. Harris
IPC分类号： B23K26/02 , B23K26/08 , B23K23/36 , B23K26/38 , B23K26/40
CPC分类号： B23K26/04 , B23K26/0604 , B23K26/0613 , B23K26/0622 , B23K26/0624 , B23K26/067 , B23K26/361 , G03F7/70041 , G03F7/70725 , H01L21/76894 , H01L23/5258 , H01L2924/0002 , H01S3/005 , H01S3/0057 , H01S3/0085 , H01S3/0092 , H01S3/1118 , H01S3/2383 , H01S5/4012 , Y10S438/94 , H01L2924/00
摘要： A set (50) of laser pulses (52) is employed to sever a conductive link (22) in a memory or other IC chip. The duration of the set (50) is preferably shorter than 1,000 ns; and the pulse width of each laser pulse (52) within the set (50) is preferably within a range of about 0.1 ps to 30 ns. The set (50) can be treated as a single “pulse” by conventional laser positioning systems (62) to perform on-the-fly link removal without stopping whenever the laser system (60) fires a set (50) of laser pulses (52) at each link (22). Conventional IR wavelengths or their harmonics can be employed.
摘要翻译：使用一组（50）激光脉冲（52）来切断存储器或其它IC芯片中的导电链路（22）。组（50）的持续时间优选短于1,000ns; 并且组（50）内的每个激光脉冲（52）的脉冲宽度优选在约0.1ps至30ns的范围内。通过传统的激光定位系统（62）可以将集合（50）视为单个脉冲，以便在激光系统（60）激发一组（50）激光脉冲（52）时执行动态链路去除而不停止，在每个链路（22）处。可以使用传统的IR波长或它们的谐波。

43. 发明申请

US20100084662A1 SEMICONDUCTOR STRUCTURE PROCESSING USING MULTIPLE LASER BEAM SPOTS OVERLAPPING LENGTHWISE ON A STRUCTURE 审中-公开
标题翻译：使用多个激光束的半导体结构处理在结构上重叠长度
公开(公告)号：US20100084662A1
公开(公告)日：2010-04-08
申请号：US12633123
申请日：2009-12-08
申请人： Kelly J. Bruland , Brian W. Baird , Ho Wai Lo , Richard S. Harris , Yunlong Sun
发明人： Kelly J. Bruland , Brian W. Baird , Ho Wai Lo , Richard S. Harris , Yunlong Sun
IPC分类号： H01L29/04 , H01L21/00 , B23K26/067 , B23K26/36
CPC分类号： B23K26/067 , B23K26/0604 , B23K26/0613 , H01L21/76894 , H01L23/5258 , H01L27/1052 , H01L27/10894 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems use laser pulses to process a selected structure on or within a semiconductor substrate. The structure has a surface, a width, and a length. The laser pulses propagate along axes that move along a scan beam path relative to the substrate as the laser pulses process the selected structure. The method simultaneously generates on the selected structure first and second laser beam pulses that propagate along respective first and second laser beam axes intersecting the selected structure at distinct first and second locations. The first and second laser beam pulses impinge on the surface of the selected structure respective first and second beam spots. Each beam spot encompasses at least the width of the selected link. The first and second beam spots are spatially offset from one another along the length of the selected structure to define an overlapping region covered by both the first and the second beam spots and a total region covered by one or both of the first and second beam spots. The total region is larger than the first beam spot and also larger than the second beam spot. The method sets respective first and second energy values of the first and second laser beam pulses to cause complete depthwise processing of the selected structure across the width of the structure in at least a portion of the total region.
摘要翻译：方法和系统使用激光脉冲来处理半导体衬底上或其中的选定结构。该结构具有表面，宽度和长度。随着激光脉冲处理所选择的结构，激光脉冲沿着沿扫描光束路径相对于衬底移动的轴传播。所述方法同时在所选择的结构上产生沿相应的第一和第二激光束轴线在不同的第一和第二位置与所选择的结构相交的第一和第二激光束脉冲。第一和第二激光束脉冲冲击所选结构的表面上相应的第一和第二光束点。每个光束点至少包含所选链接的宽度。第一和第二光束斑点沿着所选择的结构的长度在空间上彼此偏移以限定由第一和第二光束点两者覆盖的重叠区域，以及由第一和第二光束斑点中的一个或两个覆盖的总区域。总区域大于第一束斑，并且大于第二束斑。该方法设置第一和第二激光束脉冲的相应的第一和第二能量值，以便在整个区域的至少一部分中跨结构的宽度对所选结构进行完全深度处理。

44. 发明授权

US07671295B2 Processing a memory link with a set of at least two laser pulses 失效
标题翻译：用一组至少两个激光脉冲处理存储器链接
公开(公告)号：US07671295B2
公开(公告)日：2010-03-02
申请号：US10322347
申请日：2002-12-17
申请人： Yunlong Sun , Edward J. Swenson , Richard S. Harris
发明人： Yunlong Sun , Edward J. Swenson , Richard S. Harris
IPC分类号： B23K26/02 , B23K26/08 , H01L21/77
CPC分类号： B23K26/04 , B23K26/0604 , B23K26/0613 , B23K26/0622 , B23K26/0624 , B23K26/067 , B23K26/361 , G03F7/70041 , G03F7/70725 , H01L21/76894 , H01L23/5258 , H01L2924/0002 , H01S3/005 , H01S3/0057 , H01S3/0085 , H01S3/0092 , H01S3/1118 , H01S3/2383 , H01S5/4012 , Y10S438/94 , H01L2924/00
摘要： A set (50) of laser pulses (52) is employed to sever a conductive link (22) in a memory or other IC chip. The duration of the set (50) is preferably shorter than 1,000 ns; and the pulse width of each laser pulse (52) within the set (50) is preferably within a range of about 0.1 ps to 30 ns. The set (50) can be treated as a single “pulse” by conventional laser positioning systems (62) to perform on-the-fly link removal without stopping whenever the laser system (60) fires a set (50) of laser pulses (52) at each link (22). Conventional IR wavelengths or their harmonics can be employed.
摘要翻译：使用一组（50）激光脉冲（52）来切断存储器或其它IC芯片中的导电链路（22）。组（50）的持续时间优选短于1,000ns; 并且组（50）内的每个激光脉冲（52）的脉冲宽度优选在约0.1ps至30ns的范围内。传统的激光定位系统（62）可将组（50）视为单个“脉冲”，以便在激光系统（60）激发一组（50）激光脉冲（50） 52）。可以使用传统的IR波长或它们的谐波。

45. 发明授权

US07633034B2 Semiconductor structure processing using multiple laser beam spots overlapping lengthwise on a structure 有权
标题翻译：使用在结构上纵向重叠的多个激光束点的半导体结构处理
公开(公告)号：US07633034B2
公开(公告)日：2009-12-15
申请号：US11051261
申请日：2005-02-04
申请人： Kelly J. Bruland , Brian W. Baird , Ho Wai Lo , Richard S. Harris , Yunlong Sun
发明人： Kelly J. Bruland , Brian W. Baird , Ho Wai Lo , Richard S. Harris , Yunlong Sun
IPC分类号： B23K26/00
CPC分类号： B23K26/067 , B23K26/0604 , B23K26/0613 , H01L21/76894 , H01L23/5258 , H01L27/1052 , H01L27/10894 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems use laser pulses to process a selected structure on or within a semiconductor substrate. The structure has a surface, a width, and a length. The laser pulses propagate along axes that move along a scan beam path relative to the substrate as the laser pulses process the selected structure. The method simultaneously generates on the selected structure first and second laser beam pulses that propagate along respective first and second laser beam axes intersecting the selected structure at distinct first and second locations. The first and second laser beam pulses impinge on the surface of the selected structure respective first and second beam spots. Each beam spot encompasses at least the width of the selected link. The first and second beam spots are spatially offset from one another along the length of the selected structure to define an overlapping region covered by both the first and the second beam spots and a total region covered by one or both of the first and second beam spots. The total region is larger than the first beam spot and also larger than the second beam spot. The method sets respective first and second energy values of the first and second laser beam pulses to cause complete depthwise processing of the selected structure across the width of the structure in at least a portion of the total region.
摘要翻译：方法和系统使用激光脉冲来处理半导体衬底上或其中的选定结构。该结构具有表面，宽度和长度。随着激光脉冲处理所选择的结构，激光脉冲沿着沿扫描光束路径相对于衬底移动的轴传播。所述方法同时在所选择的结构上产生沿相应的第一和第二激光束轴线在不同的第一和第二位置与所选择的结构相交的第一和第二激光束脉冲。第一和第二激光束脉冲冲击所选结构的表面上相应的第一和第二光束点。每个光束点至少包含所选链接的宽度。第一和第二光束斑点沿着所选择的结构的长度在空间上彼此偏移以限定由第一和第二光束点两者覆盖的重叠区域，以及由第一和第二光束斑点中的一个或两个覆盖的总区域。总区域大于第一束斑，并且大于第二束斑。该方法设置第一和第二激光束脉冲的相应的第一和第二能量值，以便在整个区域的至少一部分中跨结构的宽度对所选结构进行完全深度处理。

46. 发明申请

US20090141750A1 SYSTEMS AND METHODS FOR LINK PROCESSING WITH ULTRAFAST AND NANOSECOND LASER PULSES 审中-公开
标题翻译：用ULTRAFAST和NANOSECOND激光脉冲串联处理的系统和方法
公开(公告)号：US20090141750A1
公开(公告)日：2009-06-04
申请号：US11949530
申请日：2007-12-03
申请人： Yunlong Sun , Richard S. Harris
发明人： Yunlong Sun , Richard S. Harris
IPC分类号： G21K5/10 , H01S3/10 , H01S3/13
CPC分类号： B23K26/0624 , H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： Systems and methods for processing an electrically conductive link in an integrated circuit use a series of laser pulses having different pulse widths to remove different portions of a target structure without substantially damaging a material underlying the electrically conductive link. In one embodiment, an ultrafast laser pulse or bundle of ultrafast laser pulses removes an overlying passivation layer in a target area and a first portion of link material. Then, a nanosecond laser pulse removes a second portion of the link material to sever an electrical connection between two nodes in the integrated circuit. The nanosecond laser pulse is configured to reduce or eliminate damage to the underlying material.
摘要翻译：用于处理集成电路中的导电链路的系统和方法使用具有不同脉冲宽度的一系列激光脉冲来去除目标结构的不同部分，而不会基本上损坏导电链路下方的材料。在一个实施例中，超快激光脉冲或超快激光脉冲束去除了目标区域中的覆盖钝化层和链接材料的第一部分。然后，纳秒激光脉冲移除链路材料的第二部分以切断集成电路中的两个节点之间的电连接。纳秒激光脉冲被配置为减少或消除对下面的材料的损坏。

47. 发明授权

US07126746B2 Generating sets of tailored laser pulses 有权
标题翻译：生成一组定制的激光脉冲
公开(公告)号：US07126746B2
公开(公告)日：2006-10-24
申请号：US10921765
申请日：2004-08-18
申请人： Yunlong Sun , Robert F. Hainsey
发明人： Yunlong Sun , Robert F. Hainsey
IPC分类号： H01S3/00 , B23K26/04
CPC分类号： H01L23/5258 , B23K26/0613 , B23K26/0622 , B23K2101/40 , H01L2924/0002 , H01L2924/00
摘要： In a master oscillator power amplifier, a driver (208) of a diode laser (202) is specially controlled to generate a set of two or more injection laser pulses that are injected into a power amplifier (204) operated in an unsaturated state to generate a set (50) of laser pulses (52) that replicate the temporal power profile of the injection laser pulses to remove a conductive link (22) and/or its overlying passivation layer (44) in a memory or other IC chip. Each set (50) includes at least one specially tailored pulse (52) and/or two or more pulses (50) having different temporal power profiles. The duration of the set (50) is short enough to be treated as a single “pulse” by conventional positioning systems (380) to perform on-the-fly link removal without stopping.
摘要翻译：在主振荡器功率放大器中，特别地控制二极管激光器（202）的驱动器（208），以产生注入到以不饱和状态操作的功率放大器（204）中的两个或更多个注入激光脉冲的集合，以产生一组（50）激光脉冲（52），其复制所述注入激光脉冲的时间功率分布以去除存储器或其它IC芯片中的导电连接（22）和/或其上覆钝化层（44）。每个组（50）包括具有不同时间功率分布的至少一个特别定制的脉冲（52）和/或两个或更多个脉冲（50）。集合（50）的持续时间足够短以被常规定位系统（380）视为单个“脉冲”，以在不停止的情况下执行即时链路去除。

48. 发明授权

US06887804B2 Passivation processing over a memory link 有权
标题翻译：通过内存链接进行钝化处理
公开(公告)号：US06887804B2
公开(公告)日：2005-05-03
申请号：US10361206
申请日：2003-02-07
申请人： Yunlong Sun , Robert F. Hainsey , Lei Sun
发明人： Yunlong Sun , Robert F. Hainsey , Lei Sun
IPC分类号： B23K26/04 , B23K26/06 , H01L23/525 , H01L21/82
CPC分类号： H01L23/5258 , B23K26/04 , B23K26/043 , B23K26/0613 , B23K26/0622 , H01L2924/0002 , H01L2924/09701 , Y10S438/94 , H01L2924/00
摘要： A set (50) of one or more laser pulses (52) is employed to remove passivation layer (44) over a conductive link (22). The link (22) can subsequently be removed by a different process such as chemical etching. The duration of the set (50) is preferably shorter than 1,000 ns; and the pulse width of each laser pulse (52) within the set (50) is preferably within a range of about 0.05 ps to 30 ns. The set (50) can be treated as a single “pulse” by conventional laser positioning systems (62) to perform on-the-fly material removal without stopping whenever the laser system (60) fires a set (50) of laser pulses (52) at each target area (51). Conventional wavelengths in the IR range or their harmonics in the green or UV range can be employed.
摘要翻译：使用一个（50）一个或多个激光脉冲（52）来去除导电连接件（22）上的钝化层（44）。随后可以通过诸如化学蚀刻的不同过程去除连接件（22）。组（50）的持续时间优选短于1,000ns; 并且组（50）内的每个激光脉冲（52）的脉冲宽度优选在约0.05ps至30ns的范围内。传统的激光定位系统（62）可将组（50）视为单个“脉冲”，以便在激光系统（60）激发一组（50）激光脉冲（50） 52）。在IR范围内的常规波长或其在绿色或UV范围内的谐波可以被采用。

49. 发明申请

US20050042805A1 Method of forming a scribe line on a passive electronic component substrate 有权
标题翻译：在无源电子部件基板上形成划线的方法
公开(公告)号：US20050042805A1
公开(公告)日：2005-02-24
申请号：US10887662
申请日：2004-07-09
申请人： Edward Swenson , Yunlong Sun , Manoj Sammi , Jay Johnson , Doug Garcia , Rupendra Anklekar
发明人： Edward Swenson , Yunlong Sun , Manoj Sammi , Jay Johnson , Doug Garcia , Rupendra Anklekar
IPC分类号： B23K26/04 , B23K26/06 , B23K26/08 , B23K26/40 , B28D5/00 , H01L21/301 , H01L21/44 , H01L21/48 , H01L21/50 , H01S20060101
CPC分类号： B23K26/0622 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/52 , B28D5/0011 , H01L2224/16 , H01L2924/0102 , H01L2924/01067 , H01L2924/01068 , H01L2924/01077 , H01L2924/09701 , Y10S438/94
摘要： A method of forming a scribe line having a sharp snap line entails directing a UV laser beam along a ceramic or ceramic-like substrate such that a portion of the thickness of the substrate is removed. The UV laser beam forms a scribe line in the substrate without appreciable substrate melting so that a clearly defined snap line forms a region of high stress concentration extending into the thickness of the substrate. Consequently, multiple depthwise cracks propagate into the thickness of the substrate in the region of high stress concentration in response to a breakage force applied to either side of the scribe line to effect clean fracture of the substrate into separate circuit components. The formation of this region facilitates higher precision fracture of the substrate while maintaining the integrity of the interior structure of each component during and after application of the breakage force.
摘要翻译：形成具有尖锐捕捉线的划线的方法需要沿着陶瓷或陶瓷状衬底引导UV激光束，使得去除衬底厚度的一部分。 UV激光束在衬底中形成划线，而没有明显的衬底熔化，使得明确限定的捕捉线形成延伸到衬底厚度的高应力集中区域。因此，响应于施加到划线的任一侧的断裂力，多个深度裂纹在高应力集中区域中传播到基板的厚度中，以使基板清洁断裂成单独的电路部件。该区域的形成促进了基板的高精度断裂，同时在施加破损力的同时保持了每个部件的内部结构的完整性。

50. 发明授权

US5569398A Laser system and method for selectively trimming films 失效
标题翻译：用于选择性修整薄膜的激光系统和方法
公开(公告)号：US5569398A
公开(公告)日：1996-10-29
申请号：US343779
申请日：1994-11-22
申请人： Yunlong Sun , Ed Swenson
发明人： Yunlong Sun , Ed Swenson
IPC分类号： H01L27/04 , B23K26/00 , B23K26/06 , B23K26/36 , H01L21/768 , H01L21/82 , H01L21/822 , H01S3/0915 , H01S3/13 , H01S3/16
CPC分类号： B23K26/06 , B23K26/0643 , B23K26/351 , B23K26/362 , B23K26/40 , H01L21/76894 , B23K2201/34 , B23K2203/08 , B23K2203/10 , B23K2203/12 , B23K2203/14 , B23K2203/172 , B23K2203/26 , B23K2203/50 , H01S3/025 , H01S3/0401 , H01S3/09415 , H01S3/11 , H01S3/1611 , H01S3/1653 , Y10S438/94
摘要： A laser system and processing method exploits the absorption contrast between the materials from which a film and an underlying substrate (26) are made to effectively remove the film from the substrate. Laser output in a wavelength range of 1.2 to 3 .mu.m optimizes the absorption contrast between many resistive or conductive film materials (e.g., metals, metal alloys, polysilicon, polycides, or disilicides) and integrated circuit substrates (e.g., silicon, gallium arsenide, or other semi-conductors) and permits the use of laser output in a wider range of energy or power levels and pulse widths, without risking damage to the substrates or adjacent circuit structures. Existing film processing laser systems can be readily modified to operate in the 1.2 to 3 .mu.m range. The laser system and processing method also exploit a wavelength range in which devices, including any semiconductor material-based devices affected by conventional laser wavelengths and devices having light-sensitive or photo-electronic portions integrated into their circuits, can be effectively functionally trimmed without inducing malfunctions or function shifts in the processed devices, thus allowing faster functional laser processing, easing geometric restrictions on circuit design, and facilitating production of denser and smaller devices.
摘要翻译：激光系统和处理方法利用材料之间的吸收对比度，其中膜和下面的基底（26）被制成以有效地从基底去除膜。在1.2至3微米的波长范围内的激光输出优化了许多电阻或导电膜材料（例如金属，金属合金，多晶硅，多硅化物或二硅化物）和集成电路基板（例如硅，砷化镓，或其他半导体），并且允许在更宽的能量或功率水平和脉冲宽度范围内使用激光输出，而不会损坏基板或相邻电路结构。现有的胶片处理激光系统可以容易地修改为在1.2到3μm的范围内操作。激光系统和处理方法还利用了波长范围，其中包括受传统激光波长影响的任何基于半导体材料的器件和具有集成到其电路中的光敏或光电子部分的器件的器件可以被有效地功能地修整而不诱导处理的设备中的故障或功能偏移，因此允许更快的功能激光处理，减轻对电路设计的几何限制，并促进生产更致密和更小的设备。

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