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41. 发明授权

US07898015B2 Insulating film and semiconductor device using this film 有权
标题翻译：使用该膜的绝缘膜和半导体器件
公开(公告)号：US07898015B2
公开(公告)日：2011-03-01
申请号：US11689301
申请日：2007-03-21
申请人： Tatsuo Shimizu , Masato Koyama
发明人： Tatsuo Shimizu , Masato Koyama
IPC分类号： H01L29/94
CPC分类号： H01L21/31155 , H01L21/28185 , H01L21/28238 , H01L21/28282 , H01L28/40 , H01L29/517 , H01L29/518 , H01L2924/0002 , Y10T428/12 , H01L2924/00
摘要： An insulating film includes a first metal, oxygen, fluorine and one of a second metal or nitrogen, and satisfies {k×[X]−[F]}/2≦8.4 atomic %, wherein the fluorine amount [F], the one element amount [X], and a valence number difference k between the first and second metals or between oxygen and nitrogen.
摘要翻译：绝缘膜包括第一金属，氧，氟和第二金属或氮之一，并且满足{k×[X] - [F]} / 2＆nlE; 8.4原子％，其中氟量[F] 元素量[X]和第一和第二金属之间或氧和氮之间的价数差k。

42. 发明申请

US20110035917A1 AUTOMATIC ROTATING-TYPE TURRET DEVICE FOR WORK MACHINERY 有权
标题翻译：自动旋转式工作机械设备
公开(公告)号：US20110035917A1
公开(公告)日：2011-02-17
申请号：US12847388
申请日：2010-07-30
申请人： Tatsuo Shimizu , Takio NAKAMURA , Akihiro Goto , Yuki Noguchi
发明人： Tatsuo Shimizu , Takio NAKAMURA , Akihiro Goto , Yuki Noguchi
IPC分类号： B23Q39/02
CPC分类号： B23Q1/5431 , B23Q16/102 , B23Q39/024 , B23Q2039/004 , B23Q2220/002 , Y10T29/5152 , Y10T29/5154 , Y10T29/5155 , Y10T29/5158 , Y10T29/5165 , Y10T74/14 , Y10T74/1494 , Y10T82/2506 , Y10T82/2508 , Y10T408/37
摘要： According to the present invention, there is provided an automatic rotating-type turret device for work machinery, in which a lift-type turret is not used. The configuration makes it possible for a clutch device to lock a turret using one drive device (actuator), and generates a wedge effect, thereby obviating the need for a large driving force capable of directly countering a load during cutting operation. The turret can even be locked using air or a small driving force generated by a motor and obviates the need for hydraulics. The automatic rotating-type turret device for work machinery is provided with an axial-direction slide body 7, which is advanced or retracted in the direction of the axis of rotation of the turret 3 by the drive device 5 advancing or retracting the drive body 6 in a direction orthogonal to the direction of rotation axis; and a clutch device 4 that is engaged or disengaged by the axial-direction slide body 7 being advanced or retracted, the turret 3 being of a non-lift-type, and there being provided to the drive body 6 a tapering action part 8 for generating an expanding action caused by the movement of the drive body 6 and pressingly sliding the axial-direction slide body 7 against the turret stage 1.
摘要翻译：根据本发明，提供了一种用于工作机械的自动旋转式转塔装置，其中不使用升降式转塔。该构造使得离合器装置可以使用一个驱动装置（致动器）锁定转台，并且产生楔形效应，从而避免需要能够在切割操作期间直接抵抗负载的大的驱动力。转塔甚至可以使用空气或由电机产生的小驱动力进行锁定，从而避免了液压的需要。用于作业机械的自动旋转式转塔装置设置有轴向滑动体7，该轴向滑动体7通过驱动装置5沿着转台轴线的旋转方向前进或后退，该驱动装置5使驱动体6前进或缩回在与旋转轴线方向正交的方向上; 并且通过前进或后退的轴向滑动体7接合或离开的离合器装置4，转塔3是非升降式的，并且在驱动体6上设置有锥形作用部8，该作用部8用于产生由驱动体6的移动引起的膨胀作用，并将轴向滑动体7按压地滑动到转台1上。

43. 发明授权

US07763934B2 Nonvolatile semiconductor memory and method of manufacturing the same 有权
标题翻译：非易失性半导体存储器及其制造方法
公开(公告)号：US07763934B2
公开(公告)日：2010-07-27
申请号：US12051274
申请日：2008-03-19
申请人： Tatsuo Shimizu , Koichi Muraoka
发明人： Tatsuo Shimizu , Koichi Muraoka
IPC分类号： H01L27/108
CPC分类号： H01L29/792 , H01L21/28282 , H01L29/4234 , H01L29/513 , H01L29/66833 , H01L29/785
摘要： A metal oxide having a sufficiently higher dielectric constant than silicon nitride, such as Ti oxide, Zr oxide, or Hf oxide is used as base material, and in order to generate a trap level capable of moving in and out electrons therein, a high-valence substance of valence of 2 or more (that is, valence VI or higher) is added by a proper amount, and to control the trap level, a proper amount of nitrogen (carbon, boron, or low-valence substance) is added, and thus a nonvolatile semiconductor memory having a charge accumulating layer is obtained.
摘要翻译：作为基材，使用具有比氮化硅足够高的介电常数的金属氧化物，例如Ti氧化物，Zr氧化物或Hf氧化物，为了产生能够进出电子的陷阱电平， 2价以上的化合价物质（即VI价以上）加入适当的量，为了控制捕获量，加入适量的氮（碳，硼或低价物质）从而获得具有电荷累积层的非易失性半导体存储器。

44. 发明授权

US07626552B2 Semiconductor device, substrate, equipment board, method for producing semiconductor device, and semiconductor chip for communication 失效
标题翻译：半导体装置，基板，设备基板，半导体装置的制造方法以及通信用半导体芯片
公开(公告)号：US07626552B2
公开(公告)日：2009-12-01
申请号：US12026842
申请日：2008-02-06
申请人： Shunichi Sukegawa , Takeo Sekino , Kenichi Shigenami , Shinichi Toi , Tatsuo Shimizu
发明人： Shunichi Sukegawa , Takeo Sekino , Kenichi Shigenami , Shinichi Toi , Tatsuo Shimizu
IPC分类号： H01Q1/38 , H01L23/34
CPC分类号： H01L23/66 , H01L23/48 , H01L24/48 , H01L24/49 , H01L25/0652 , H01L25/105 , H01L25/162 , H01L25/18 , H01L2223/6677 , H01L2224/16 , H01L2224/4824 , H01L2224/48247 , H01L2224/4943 , H01L2225/1023 , H01L2225/1058 , H01L2225/1088 , H01L2924/00011 , H01L2924/00014 , H01L2924/01019 , H01L2924/14 , H01L2924/15311 , H01L2924/1532 , H01L2924/15331 , H01L2924/1627 , H01L2924/181 , H01L2924/3025 , H01Q7/00 , H01Q21/061 , H01L2924/00012 , H01L2224/0401 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device includes a first substrate having a first surface for mounting an electronic component and a second surface substantially parallel to the first surface. The first substrate includes a first region for mounting the electronic component, a second region including a plurality of first communication units for transmitting and receiving signals to and from a second substrate, input-output circuits disposed on the first region or the second region, the input-out circuits corresponding to the first communication units, and a control circuit for controlling input to and output from the input-output circuits disposed on the first region or the second region of the first substrate. Each of the input-output circuits includes an output circuit for outputting a signal to a second communication unit of the second substrate corresponding to the first communication unit and an input unit for receiving a signal sent from the corresponding second communication unit.
摘要翻译：半导体器件包括具有用于安装电子部件的第一表面和基本上平行于第一表面的第二表面的第一基板。第一基板包括用于安装电子部件的第一区域，包括用于向第二基板发送信号和从第二基板发送信号的多个第一通信单元的第二区域，设置在第一区域或第二区域上的输入输出电路，对应于第一通信单元的输入输出电路，以及控制电路，用于控制从设置在第一基板的第一区域或第二区域上的输入输出电路的输入和输出。每个输入输出电路包括用于向与第一通信单元相对应的第二基板的第二通信单元输出信号的输出电路和用于接收从相应的第二通信单元发送的信号的输入单元。

45. 发明授权

US07579691B2 Semiconductor device, substrate, equipment board, method for producing semiconductor device, and semiconductor chip for communication 失效
公开(公告)号：US07579691B2
公开(公告)日：2009-08-25
申请号：US12026884
申请日：2008-02-06
申请人： Shunichi Sukegawa , Takeo Sekino , Kenichi Shigenami , Shinichi Toi , Tatsuo Shimizu
发明人： Shunichi Sukegawa , Takeo Sekino , Kenichi Shigenami , Shinichi Toi , Tatsuo Shimizu
IPC分类号： H01L23/34
CPC分类号： H01L23/66 , H01L23/48 , H01L24/48 , H01L24/49 , H01L25/0652 , H01L25/105 , H01L25/162 , H01L25/18 , H01L2223/6677 , H01L2224/16 , H01L2224/4824 , H01L2224/48247 , H01L2224/4943 , H01L2225/1023 , H01L2225/1058 , H01L2225/1088 , H01L2924/00011 , H01L2924/00014 , H01L2924/01019 , H01L2924/14 , H01L2924/15311 , H01L2924/1532 , H01L2924/15331 , H01L2924/1627 , H01L2924/181 , H01L2924/3025 , H01Q7/00 , H01Q21/061 , H01L2924/00012 , H01L2224/0401 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device includes a first substrate having a first surface for mounting an electronic component and a second surface substantially parallel to the first surface. The first substrate includes a first region for mounting the electronic component, a second region including a plurality of first communication units for transmitting and receiving signals to and from a second substrate, input-output circuits disposed on the first region or the second region, the input-out circuits corresponding to the first communication units, and a control circuit for controlling input to and output from the input-output circuits disposed on the first region or the second region of the first substrate. Each of the input-output circuits includes an output circuit for outputting a signal to a second communication unit of the second substrate corresponding to the first communication unit and an input unit for receiving a signal sent from the corresponding second communication unit.

46. 发明授权

US07400019B2 Insulating film and electronic device 失效
标题翻译：绝缘膜和电子设备
公开(公告)号：US07400019B2
公开(公告)日：2008-07-15
申请号：US11347244
申请日：2006-02-06
申请人： Tatsuo Shimizu , Hideki Satake
发明人： Tatsuo Shimizu , Hideki Satake
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L21/28185 , B82Y10/00 , H01L21/02148 , H01L21/02156 , H01L21/02175 , H01L21/02178 , H01L21/02181 , H01L21/02189 , H01L21/02192 , H01L21/02197 , H01L21/022 , H01L21/02244 , H01L21/02255 , H01L21/02271 , H01L21/02293 , H01L21/02337 , H01L21/28194 , H01L21/28291 , H01L21/3142 , H01L21/3147 , H01L21/3162 , H01L21/31641 , H01L21/31645 , H01L21/31691 , H01L28/56 , H01L29/122 , H01L29/152 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/78
摘要： An insulating film comprising: a first barrier layer; a well layer provided; and a second barrier layer is proposed. The first barrier layer consists of a material having a first bandgap and a first relative permittivity. The well layer is provided on the first barrier layer, and consists of a material having a second bandgap smaller than the first bandgap and having a second relative permittivity larger than first relative permittivity. Discrete energy levels are formed in the well layer by a quantum effect. The second barrier layer is provided on the well layer, and consists of a material having a third bandgap larger than the second bandgap and having a third relative permittivity smaller than second relative permittivity. Alternatively, an insulating film comprising: n (n being an integer larger than 2) layers of barrier layer consisting of a material having a bandgap larger than a first bandgap and having a relative permittivity smaller than a first relative permittivity; and (n−1) layers of well layers consisting of a material having a bandgap smaller than the first bandgap and having a relative permittivity larger than the first relative permittivity, discrete energy levels being formed in the well layer by a quantum effect, each of the barrier layers and each of the well layers being stacked by turns, and discrete energy levels being formed in each of the well layers by a quantum effect, is provided. Alternatively, an insulating film having a lattice mismatch within a range of plus-or-minus 1.5% to the substrate, and further having a high barrier and a large permittivity is provided.
摘要翻译：一种绝缘膜，包括：第一阻挡层; 提供井层; 并提出了第二阻挡层。第一阻挡层由具有第一带隙和第一相对介电常数的材料组成。阱层设置在第一阻挡层上，并且由具有小于第一带隙的第二带隙的材料构成，并且具有大于第一相对介电常数的第二相对介电常数。通过量子效应在阱层中形成离散能级。第二阻挡层设置在阱层上，由具有比第二带隙大的第三带隙的材料构成，具有小于第二相对介电常数的第三相对介电常数。或者，一种绝缘膜，包括：由具有比第一带隙大的带隙并且具有小于第一相对介电常数的相对介电常数的材料构成的阻挡层的n（n是大于2的整数）层; 和（n-1）层，由具有小于第一带隙的带隙并且具有大于第一相对介电常数的相对介电常数的材料构成的阱层，通过量子效应在阱层中形成离散能级，提供阻挡层和每个阱层的匝数，并且通过量子效应在每个阱层中形成离散的能级。或者，提供了具有与衬底正或负1.5％的晶格失配并且还具有高屏障和大介电常数的绝缘膜。

47. 发明申请

US20070228526A1 INSULATING FILM AND SEMICONDUCTOR DEVICE 有权
标题翻译：绝缘膜和半导体器件
公开(公告)号：US20070228526A1
公开(公告)日：2007-10-04
申请号：US11689212
申请日：2007-03-21
申请人： Tatsuo Shimizu , Noburu Fukushima
发明人： Tatsuo Shimizu , Noburu Fukushima
IPC分类号： H01L23/58
CPC分类号： H01L21/02194 , H01L21/02161 , H01L21/28194 , H01L21/28238 , H01L21/31641 , H01L21/31645 , H01L28/65 , H01L29/517 , H01L29/66825 , H01L29/66833 , H01L29/7881 , H01L29/792
摘要： An insulating film includes an oxide of a metal selected from Hf and Zr, the oxide being doped by at least one of Ba, Sr and Mg. And the insulating film satisfies the following formula (1): 0.06 at %≦[Ba]+[Sr]+[Mg]≦1.4 at % (1) wherein [Ba] represents atomic % of Ba, [Sr] represents atomic % of Sr, and [Mg] represents atomic % of Mg.
摘要翻译：绝缘膜包括选自Hf和Zr的金属的氧化物，所述氧化物被Ba，Sr和Mg中的至少一种掺杂。绝缘膜满足下列公式（1）：<？in-line-formula description =“In-line formula”end =“lead”≥0.06 at％<= [Ba] + [Sr] + [Mg] 其中[Ba]表示Ba的原子％，[Sr]表示Sr的原子％，Sr表示原子％的Sr， [Mg]表示Mg的原子％。

48. 发明申请

US20060175704A1 Current collecting structure and electrode structure 审中-公开
标题翻译：集电结构和电极结构
公开(公告)号：US20060175704A1
公开(公告)日：2006-08-10
申请号：US10565128
申请日：2004-07-15
申请人： Tatsuo Shimizu , Zenzou Hashimoto
发明人： Tatsuo Shimizu , Zenzou Hashimoto
IPC分类号： H01L23/52
CPC分类号： H01G9/155 , H01M4/0402 , H01M4/0421 , H01M4/13 , H01M4/131 , H01M4/133 , H01M4/1391 , H01M4/1393 , H01M4/625 , H01M4/64 , H01M4/661 , H01M4/663 , H01M4/664 , H01M4/667 , H01M4/669 , H01M4/86 , Y02E60/13
摘要： An object of this invention is to achieve the current collecting structure and the electrode structure with good electrical conductivity and ionic conductivity which are comprised of the current collecting substrate and the current collecting structure or the electrode structure that are covered with the carbon material or the electrode active material formed on the current collecting substrate without the use of binders.
摘要翻译：本发明的一个目的是实现电流收集结构和具有良好导电性和离子传导性的电极结构，它们由集电衬底和集电结构或电极结构组成，其被碳材料或电极覆盖形成在集电衬底上的活性材料，而不使用粘合剂。

49. 发明申请

US20060163676A1 Insulating film and semiconductor device 有权
标题翻译：绝缘膜和半导体器件
公开(公告)号：US20060163676A1
公开(公告)日：2006-07-27
申请号：US11318622
申请日：2005-12-28
申请人： Tatsuo Shimizu , Takeshi Yamaguchi
发明人： Tatsuo Shimizu , Takeshi Yamaguchi
IPC分类号： H01L29/94
CPC分类号： H01L21/02175 , H01L21/28194 , H01L21/28211 , H01L21/28273 , H01L21/31691 , H01L29/513 , H01L29/517 , H01L29/518
摘要： An insulating film includes an oxide or an oxynitride of a constituent element having a positive valence. The oxide or the oxynitride contains an additive element having a larger valence than the constituent element in a range not less than 3×10−8 at % and less than 1.6×10−3 at %.
摘要翻译：绝缘膜包括具有正价化合物的氧化物或氧氮化物。氧化物或氮氧化物含有比构成元素价格大的添加元素，其含量在不小于3×10 -8 at％且小于1.6×10 -3 -3的范围内％。

50. 发明申请

US20050230759A1 Semiconductor device and method of manufacturing semiconductor device 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050230759A1
公开(公告)日：2005-10-20
申请号：US11049661
申请日：2005-02-04
申请人： Tatsuo Shimizu , Takeshi Yamaguchi , Yukie Nishikawa
发明人： Tatsuo Shimizu , Takeshi Yamaguchi , Yukie Nishikawa
IPC分类号： H01L21/322 , H01L21/28 , H01L21/316 , H01L21/336 , H01L29/49 , H01L29/51 , H01L29/76 , H01L29/78
CPC分类号： H01L29/513 , H01L21/02123 , H01L21/02142 , H01L21/022 , H01L21/28194 , H01L21/31604 , H01L21/31641 , H01L21/31645 , H01L21/31691 , H01L29/4966 , H01L29/51 , H01L29/517
摘要： A semiconductor device includes a semiconductor substrate containing Si as a main component, and an active element formed on the semiconductor substrate and including an insulating metal silicide thin film formed on the semiconductor substrate, dangling bonds of Si of the semiconductor substrate being terminated by the insulating metal silicide thin film.
摘要翻译：半导体器件包括以Si为主要成分的半导体衬底和形成在半导体衬底上的有源元件，并且包括形成在半导体衬底上的绝缘金属硅化物薄膜，半导体衬底的Si与绝缘体端接的悬挂键金属硅化物薄膜。

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