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41. 发明申请

US20120282765A1 Method of Forming Metal Gates and Metal Contacts in a Common Fill Process 有权
标题翻译：在普通填充工艺中形成金属门和金属触点的方法
公开(公告)号：US20120282765A1
公开(公告)日：2012-11-08
申请号：US13100798
申请日：2011-05-04
申请人： Ronny Pfützner , Ralf Richter , Jens Heinrich
发明人： Ronny Pfützner , Ralf Richter , Jens Heinrich
IPC分类号： H01L21/3213
CPC分类号： H01L21/823871 , H01L21/823437 , H01L21/823475 , H01L21/823828
摘要： The method described herein involves a method of forming metal gates and metal contacts in a common fill process. The method may involve forming a gate structure comprising a sacrificial gate electrode material, forming at least one conductive contact opening in a layer of insulating material positioned adjacent the gate structure, removing the sacrificial gate electrode material to thereby define a gate electrode opening, and performing a common deposition process to fill the conductive contact opening and the gate electrode opening with a conductive fill material.
摘要翻译：本文描述的方法涉及在公共填充过程中形成金属栅极和金属触点的方法。该方法可以包括形成包括牺牲栅电极材料的栅极结构，在邻近栅结构定位的绝缘材料层中形成至少一个导电接触开口，去除牺牲栅电极材料，从而限定栅电极开口，并执行用于用导电填充材料填充导电接触开口和栅电极开口的公共沉积工艺。

42. 发明授权

US08216928B1 Methods for fabricating semiconductor devices having local contacts 有权
标题翻译：制造具有局部接触的半导体器件的方法
公开(公告)号：US08216928B1
公开(公告)日：2012-07-10
申请号：US13014561
申请日：2011-01-26
申请人： Ralf Richter , Torsten Huisinga , Jens Heinrich
发明人： Ralf Richter , Torsten Huisinga , Jens Heinrich
IPC分类号： H01L21/44
CPC分类号： H01L21/823807 , H01L21/76801 , H01L21/823412 , H01L21/823425 , H01L21/823475 , H01L21/823814 , H01L21/823871 , H01L23/53295 , H01L29/78 , H01L29/7843 , H01L2924/0002 , H01L2924/00
摘要： Fabrication methods for semiconductor device structures are provided. One method for fabricating a semiconductor device structure that includes a gate structure overlying a semiconductor substrate and a doped region formed in the semiconductor substrate adjacent to the gate structure involves the steps of forming a first layer of dielectric material overlying the gate structure and the doped region, isotropically etching the first layer of dielectric material, forming a second layer of dielectric material overlying the first layer of dielectric material after isotropically etching the first layer, and forming a conductive contact that is electrically connected to the doped region within the first layer and the second layer.
摘要翻译：提供半导体器件结构的制造方法。制造半导体器件结构的一种方法包括覆盖半导体衬底的栅极结构和形成在与栅极结构相邻的半导体衬底中的掺杂区域的半导体器件结构包括以下步骤：形成覆盖栅极结构和掺杂区域的第一绝缘材料层各向同性蚀刻所述第一介电材料层，在各向同性蚀刻所述第一层之后形成覆盖所述第一介电材料层的第二介电材料层，以及形成电连接到所述第一层内的所述掺杂区域的导电接触，以及第二层。

43. 发明申请

US20110104880A1 CORNER ROUNDING IN A REPLACEMENT GATE APPROACH BASED ON A SACRIFICIAL FILL MATERIAL APPLIED PRIOR TO WORK FUNCTION METAL DEPOSITION 有权
标题翻译：基于在工作功能金属沉积之前应用的真空填充材料的替代浇口方法中的拐角
公开(公告)号：US20110104880A1
公开(公告)日：2011-05-05
申请号：US12894985
申请日：2010-09-30
申请人： Jens Heinrich , Thomas Werner , Frank Seliger , Frank Richter
发明人： Jens Heinrich , Thomas Werner , Frank Seliger , Frank Richter
IPC分类号： H01L21/71
CPC分类号： H01L21/82385 , H01L21/28088 , H01L21/823835 , H01L21/823842 , H01L29/4966 , H01L29/66545 , H01L29/66583 , H01L29/7833
摘要： In a replacement gate approach, a top area of a gate opening has a superior cross-sectional shape which is accomplished on the basis of a plasma assisted etch process or an ion sputter process. During the process, a sacrificial fill material protects sensitive materials, such as a high-k dielectric material and a corresponding cap material. Consequently, the subsequent deposition of a work function adjusting material layer may not result in a surface topography which may result in a non-reliable filling-in of the electrode metal. In some illustrative embodiments, the sacrificial fill material may also be used as a deposition mask for avoiding the deposition of the work function adjusting metal in certain gate openings in which a different type of work function adjusting species is required.
摘要翻译：在替代栅极方法中，栅极开口的顶部区域具有优异的横截面形状，其基于等离子体辅助蚀刻工艺或离子溅射工艺来实现。在该过程中，牺牲填充材料保护敏感材料，例如高k电介质材料和对应的帽材料。因此，随后的功函调整材料层的沉积可能不会导致表面形貌，这可能导致不可靠地填充电极金属。在一些说明性实施例中，牺牲填充材料也可以用作沉积掩模，以避免功能调节金属沉积在需要不同类型的功能调节物质的某些门开口中。

44. 发明申请

US20110076844A1 SUPERIOR FILL CONDITIONS IN A REPLACEMENT GATE APPROACH BY PERFORMING A POLISHING PROCESS BASED ON A SACRIFICIAL FILL MATERIAL 有权
标题翻译：通过基于真空填充材料执行抛光过程的替代浇口方法中的高级填充条件
公开(公告)号：US20110076844A1
公开(公告)日：2011-03-31
申请号：US12893102
申请日：2010-09-29
申请人： Jens Heinrich , Gerd Marxsen , Katja Steffen
发明人： Jens Heinrich , Gerd Marxsen , Katja Steffen
IPC分类号： H01L21/28
CPC分类号： H01L21/823842 , H01L21/823425 , H01L21/82345 , H01L21/823456 , H01L21/82385 , H01L29/517 , H01L29/6653 , H01L29/66545
摘要： In a replacement gate approach, a top area of a gate opening may receive a superior cross-sectional shape after the deposition of a work function adjusting species on the basis of a polishing process, wherein a sacrificial material may protect the sensitive materials in the gate opening.
摘要翻译：在替代浇口方法中，在沉积根据抛光工艺调节物质的功函数之后，栅极开口的顶部区域可以接收优异的横截面形状，其中牺牲材料可以保护栅极中的敏感材料开放

45. 发明授权

US6002312A Electromagnetic relay 失效
标题翻译：电磁继电器
公开(公告)号：US6002312A
公开(公告)日：1999-12-14
申请号：US142155
申请日：1998-09-02
申请人： Michael Dittmann , Jens Heinrich , Heinz Stadler
发明人： Michael Dittmann , Jens Heinrich , Heinz Stadler
IPC分类号： H01H50/02 , H01H50/04 , H01H50/14 , H01H51/22
CPC分类号： H01H50/02 , H01H51/2281 , H01H50/023 , H01H50/026 , H01H50/14
摘要： An electromagnetic relay has a base with a contact arrangement and a rocker armature mounted on the base. Above the base, a magnet system with a coil, a core and two yokes is provided, this system working together with the rocker armature. At least the coil with the core is embedded in the insulating material of a basic body which surrounds the base in box-type fashion with side walls that are integrally formed downwardly, and forms a sealed contact chamber. By means of the basic body surrounding the coil, a high insulation strength of the relay between the coil and the contact system is ensured, as is a high stability of the construction.
摘要翻译： PCT No.PCT / DE97 / 00686 Sec。 371日期：1998年9月2日 102（e）1998年9月2日PCT 1997年4月3日PCT PCT。 WO97 / 39467 PCT公开号日期1997年10月23日电磁继电器具有基座，触点布置和安装在基座上的摇臂电枢。在基座之上，提供了具有线圈，铁芯和两个轭的磁体系统，该系统与摇臂电枢一起工作。至少具有芯的线圈被嵌入在基本体的绝缘材料中，该基体以箱形方式围绕底部，侧壁一体形成，并形成密封的接触室。通过围绕线圈的基体，确保线圈和接触系统之间的继电器的高绝缘强度，以及该结构的高稳定性。

46. 发明授权

US08749330B2 Electric contact element and method for producing an electric contact element 有权
标题翻译：电接点元件及电接点元件的制造方法
公开(公告)号：US08749330B2
公开(公告)日：2014-06-10
申请号：US13521964
申请日：2011-01-14
申请人： Jens Heinrich , Ralf Hoffmann , Peter Sandeck , Martin Wieberger , Peter Braumann , Andreas Koffler , Bernd Kempf , Allen Molvar
发明人： Jens Heinrich , Ralf Hoffmann , Peter Sandeck , Martin Wieberger , Peter Braumann , Andreas Koffler , Bernd Kempf , Allen Molvar
IPC分类号： H01H51/22
CPC分类号： H01H1/023 , H01H1/021 , H01H1/0237 , H01H11/06
摘要： The present invention relates to a method for producing an electric contact element from a semifinished product and to the electric contact element and the corresponding semifinished product. The method for producing an electric contact element (100), which can be electrically contacted by a mating contact, comprises the following steps: producing a wire (120) from a first electrically conductive material (112); coating the wire surface with a sheath (114) made of a second electrically conductive material; partially removing the sheath (114) in a direction along a longitudinal wire axis (118); forming at least one cylindrical semifinished product (110) by dividing the wire in a direction transverse to the longitudinal wire axis; fixing the semifinished product on a contact carrier (104) such that the second electrically conductive material is connected to the contact carrier; and reshaping the welded semifinished product so as to form the contact element (100), wherein a contact area (106), which is accessible for a mating contact, is formed by the first electrically conductive material.
摘要翻译：本发明涉及从半成品，电接触元件和相应的半成品制造电接触元件的方法。用于制造可由配合触点电接触的电接触元件（100）的方法包括以下步骤：从第一导电材料（112）制造线（120）; 用由第二导电材料制成的护套（114）涂覆线表面; 在沿着纵向线轴线（118）的方向上部分地去除护套（114）; 通过在横向于所述纵向线轴线的方向上分割所述线来形成至少一个圆柱形半成品（110）; 将半成品固定在接触载体（104）上，使得第二导电材料连接到接触载体上; 并重新形成焊接的半成品以便形成接触元件（100），其中可由第一导电材料形成可配合接触的接触区域（106）。

47. 发明授权

US08716079B2 Superior fill conditions in a replacement gate approach by corner rounding based on a sacrificial fill material 有权
标题翻译：基于牺牲填充材料，通过拐角加工在替代浇口处理中具有优异的填充条件
公开(公告)号：US08716079B2
公开(公告)日：2014-05-06
申请号：US12891403
申请日：2010-09-27
申请人： Jens Heinrich , Fernando Koch , Johann Steinmetz
发明人： Jens Heinrich , Fernando Koch , Johann Steinmetz
IPC分类号： H01L21/8238
CPC分类号： H01L21/823842 , H01L21/82385 , H01L29/517 , H01L29/6653 , H01L29/66545
摘要： In a replacement gate approach, a top area of a gate opening may receive a superior cross-sectional shape on the basis of a material erosion process, wherein a sacrificial material may protect sensitive materials, such as a high-k dielectric material, in the gate opening. In one illustrative embodiment, the sacrificial material may be applied after depositing a work function adjusting species in the gate opening.
摘要翻译：在替代门方法中，栅极开口的顶部区域可以在材料侵蚀过程的基础上接收优异的横截面形状，其中牺牲材料可以保护敏感材料，例如高k电介质材料，在开门在一个说明性实施例中，可以在沉积在门开口中调节物质的功函数之后施加牺牲材料。

48. 发明授权

US08685807B2 Method of forming metal gates and metal contacts in a common fill process 有权
标题翻译：在普通填充过程中形成金属栅极和金属触点的方法
公开(公告)号：US08685807B2
公开(公告)日：2014-04-01
申请号：US13100798
申请日：2011-05-04
申请人： Ronny Pfuetzner , Ralf Richter , Jens Heinrich
发明人： Ronny Pfuetzner , Ralf Richter , Jens Heinrich
IPC分类号： H01L21/336
CPC分类号： H01L21/823871 , H01L21/823437 , H01L21/823475 , H01L21/823828
摘要： The method described herein involves a method of forming metal gates and metal contacts in a common fill process. The method may involve forming a gate structure comprising a sacrificial gate electrode material, forming at least one conductive contact opening in a layer of insulating material positioned adjacent the gate structure, removing the sacrificial gate electrode material to thereby define a gate electrode opening, and performing a common deposition process to fill the conductive contact opening and the gate electrode opening with a conductive fill material.
摘要翻译：本文描述的方法涉及在公共填充过程中形成金属栅极和金属触点的方法。该方法可以包括形成包括牺牲栅电极材料的栅极结构，在邻近栅极结构定位的绝缘材料层中形成至少一个导电接触开口，去除牺牲栅电极材料，从而限定栅电极开口，并执行用于用导电填充材料填充导电接触开口和栅电极开口的公共沉积工艺。

49. 发明申请

US20130002380A1 ELECTRIC CONTACT ELEMENT AND METHOD FOR PRODUCING AN ELECTRIC CONTACT ELEMENT 有权
标题翻译：电接点元件及电接点元件的制造方法
公开(公告)号：US20130002380A1
公开(公告)日：2013-01-03
申请号：US13521964
申请日：2011-01-14
申请人： Jens Heinrich , Ralf Hoffmann , Peter Sandeck , Martin Wieberger , Peter Braumann , Andreas Koffler , Bernd Kempf , Allen Molvar
发明人： Jens Heinrich , Ralf Hoffmann , Peter Sandeck , Martin Wieberger , Peter Braumann , Andreas Koffler , Bernd Kempf , Allen Molvar
IPC分类号： H01H50/54 , H01H11/04 , B32B1/04 , H01B5/02
CPC分类号： H01H1/023 , H01H1/021 , H01H1/0237 , H01H11/06
摘要： The present invention relates to a method for producing an electric contact element from a semifinished product and to the electric contact element and the corresponding semifinished product. The method for producing an electric contact element (100), which can be electrically contacted by a mating contact, comprises the following steps: producing a wire (120) from a first electrically conductive material (112); coating the wire surface with a sheath (114) made of a second electrically conductive material; partially removing the sheath (114) in a direction along a longitudinal wire axis (118); forming at least one cylindrical semifinished product (110) by dividing the wire in a direction transverse to the longitudinal wire axis; fixing the semifinished product on a contact carrier (104) such that the second electrically conductive material is connected to the contact carrier; and reshaping the welded semifinished product so as to form the contact element (100), wherein a contact area (106), which is accessible for a mating contact, is formed by the first electrically conductive material.
摘要翻译：本发明涉及从半成品，电接触元件和相应的半成品制造电接触元件的方法。用于制造可由配合触点电接触的电接触元件（100）的方法包括以下步骤：从第一导电材料（112）制造线（120）; 用由第二导电材料制成的护套（114）涂覆线表面; 在沿着纵向线轴线（118）的方向上部分地去除护套（114）; 通过在横向于所述纵向线轴线的方向上分割所述线来形成至少一个圆柱形半成品（110）; 将半成品固定在接触载体（104）上，使得第二导电材料连接到接触载体上; 并重新形成焊接的半成品以便形成接触元件（100），其中可由第一导电材料形成可配合接触的接触区域（106）。

50. 发明授权

US08338306B2 Forming semiconductor resistors in a semiconductor device comprising metal gates by increasing etch resistivity of the resistors 有权
标题翻译：通过增加电阻器的蚀刻电阻率，在包括金属栅极的半导体器件中形成半导体电阻器
公开(公告)号：US08338306B2
公开(公告)日：2012-12-25
申请号：US12886765
申请日：2010-09-21
申请人： Jens Heinrich , Ralf Richter , Katja Steffen , Johannes Groschopf , Frank Seliger , Andreas Ott , Manfred Heinz , Andy Wei
发明人： Jens Heinrich , Ralf Richter , Katja Steffen , Johannes Groschopf , Frank Seliger , Andreas Ott , Manfred Heinz , Andy Wei
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L27/0629
摘要： In a replacement gate approach, the polysilicon material may be efficiently removed during a wet chemical etch process, while the semiconductor material in the resistive structures may be substantially preserved. For this purpose, a species such as xenon may be incorporated into the semiconductor material of the resistive structure, thereby imparting a significantly increased etch resistivity to the semiconductor material. The xenon may be incorporated at any appropriate manufacturing stage.
摘要翻译：在替代栅极方法中，可以在湿化学蚀刻工艺期间有效地去除多晶硅材料，同时电阻结构中的半导体材料可以被基本保持。为此，可以将诸如氙的物质并入电阻结构的半导体材料中，从而赋予半导体材料显着增加的蚀刻电阻率。氙气可以在任何适当的生产阶段进行。

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