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41. 发明授权

US4720735A Phototransistor having a non-homogeneously base region 失效
标题翻译：具有非均匀碱性区域的光电晶体管
公开(公告)号：US4720735A
公开(公告)日：1988-01-19
申请号：US903890
申请日：1986-09-04
申请人： Jun-ichi Nishizawa
发明人： Jun-ichi Nishizawa
IPC分类号： H01L31/10 , H01L31/0352 , H01L31/11 , H01L29/80
CPC分类号： H01L31/035281 , H01L31/1105 , Y02E10/50
摘要： In a phototransistor which comprises an emitter, a collector and a base, base portions 20 and 21 are made unequal in impurity density, by which minority carriers of optically excited carriers are stored in the high impurity density regions 20 of the base and majority carriers are permitted to easily pass through the low impurity sensity regions 21 of the base, and voltages of the high and low impurity density regions are coupled together. A very high-sensitivity and high-speed operation can be achieved.
摘要翻译： PCT No.PCT / JP83 / 00290 Sec。 1984年4月30日 102（e）日期1984年4月30日PCT提交1983年8月31日PCT公布。公开号WO84 / 01055 日期为1984年3月15日。在包括发射极，集电极和基极的光电晶体管中，基极部分20和21的杂质密度不等于光激发载流子的少数载流子被储存在高杂质密度区域20中的基极和多数载流子容许通过基极的低杂质感度区域21，并且高和低杂质浓度区域的电压耦合在一起。可以实现非常高灵敏度和高速度的操作。

42. 发明授权

US4692194A Method of performing solution growth of a GaAs compound semiconductor crystal layer under control of conductivity type thereof 失效
标题翻译：在其导电类型的控制下进行GaAs化合物半导体晶体层的溶液生长的方法
公开(公告)号：US4692194A
公开(公告)日：1987-09-08
申请号：US904759
申请日：1986-09-25
申请人： Jun-ichi Nishizawa
发明人： Jun-ichi Nishizawa
IPC分类号： C30B19/00 , C30B19/04 , C30B29/40 , H01L21/208
CPC分类号： C30B19/04 , C30B29/40 , H01L21/02395 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/02625 , H01L21/02628 , Y10S117/907 , Y10S438/915
摘要： In a solution growth method to perform an epitaxial growth by doping an amphoteric impurity into a Group III-V compound semiconductor crystal, vapor of a crystal-constituting Group V element is supplied to the solution, during the growth process, from above this solution under a controlled vapor pressure, while maintaining the growth temperature at a constant value by relying on, for example, a temperature difference technique, whereby the conductivity type in the grown crystal layer can be controlled easily as desired, and also a pn junction can be conveniently formed in the grown crystal.
摘要翻译：在通过将两性杂质掺杂到III-V族化合物半导体晶体中进行外延生长的溶液生长方法中，在生长过程中，从该溶液的上方向溶液中提供晶体构成的V族元素的蒸气通过依靠例如温差技术将生长温度保持在恒定值，由此可以根据需要容易地控制生长晶体层中的导电类型，并且还可以方便地进行pn结的控制蒸气压在生长的水晶中形成。

43. 发明授权

US4686555A Solid state image sensor 失效
标题翻译：固态图像传感器
公开(公告)号：US4686555A
公开(公告)日：1987-08-11
申请号：US556347
申请日：1983-11-30
申请人： Atsushi Yusa , Jun-ichi Nishizawa , Sohbe Suzuki , Takashige Tamamushi
发明人： Atsushi Yusa , Jun-ichi Nishizawa , Sohbe Suzuki , Takashige Tamamushi
IPC分类号： H01L27/146 , H01L29/772 , H01L31/112 , H01L31/113 , H04N5/30 , H04N5/335 , H01L27/14 , H01L31/00
CPC分类号： H01L29/7722 , H01L27/14679 , H01L31/1126 , H01L31/1136 , H04N5/30
摘要： A solid state image sensor comprising static induction transistors each forming a picture element.Each static induction transistor in the solid state image sensor has a lateral structure in which the source and drain regions are formed by surface regions provided on the same side in an epitaxial layer forming the channel region and a signal charge storage gate region are formed by a buried gate region provided under the channel region and a surface gate region provided on the channel region, so that the source-drain current flows in parallel to the surface of epitaxial layer and is effectively controlled between the buried and surface gate regions.
摘要翻译：一种固态图像传感器，包括各自形成像素的静态感应晶体管。固态图像传感器中的每个静态感应晶体管具有横向结构，其中源极和漏极区域由形成沟道区的外延层中设置在同一侧的表面区域形成，并且信号电荷存储栅极区域由掩埋栅极区域和设置在沟道区域上的表面栅极区域，使得源极 - 漏极电流平行于外延层的表面流动并且被有效地控制在掩埋栅极区域和表面栅极区域之间。

44. 发明授权

US4673985A Semiconductor image sensor 失效
标题翻译：半导体图像传感器
公开(公告)号：US4673985A
公开(公告)日：1987-06-16
申请号：US610283
申请日：1984-05-09
申请人： Jun-ichi Nishizawa
发明人： Jun-ichi Nishizawa
IPC分类号： H01L27/14 , H01L27/146 , H04N5/335 , H04N5/355 , H04N5/357 , H04N5/374 , H04N3/12 , H01L29/80
CPC分类号： H01L27/14679
摘要： A semiconductor image sensor is formed by static induction transistors, each provided with a control gate region which is a first gate region for control use and a shielding gate region which is a second gate region. The distance between an n.sup.+ source region and the control gate region is larger than the distance between the n.sup.+ source region and the shielding gate region. It is also possible to adopt such a structure that a light-shielding mask is provided on the shielding gate region. The isolation of adjacent photoconductive cells and the integration of adjacent photoconductive cells are improved, and the integration density is sharply increased.
摘要翻译： PCT No.PCT / JP83 / 00303 Sec。 371日期1984年5月9日 102（e）日期1984年5月9日PCT提交1983年9月9日PCT公布。公开号WO84 / 01076 日期：1984年3月15日。半导体图像传感器由静电感应晶体管形成，每个静电感应晶体管设置有作为用于控制使用的第一栅极区域和作为第二栅极区域的屏蔽栅极区域的控制栅极区域。 n +源极区域和控制栅极区域之间的距离大于n +源极区域和屏蔽栅极区域之间的距离。也可以采用在屏蔽栅极区域上设置遮光掩模的结构。相邻光导电池的隔离和相邻光导电池的集成得到改善，集成密度急剧增加。

45. 发明授权

US4631592A Semiconductor image sensor 失效
标题翻译：半导体图像传感器
公开(公告)号：US4631592A
公开(公告)日：1986-12-23
申请号：US793239
申请日：1985-10-31
申请人： Jun-ichi Nishizawa
发明人： Jun-ichi Nishizawa
IPC分类号： H01L27/146 , H04N5/335 , H04N5/374 , H01L27/14
CPC分类号： H01L27/14679 , H04N3/15
摘要： A semiconductor image sensor which has photocells arranged in a matrix form is miniaturized and integrated with high density, thereby to increase its light amplification factor and operating speed. To this end, each photocell is formed by a static induction transistor which has a pair of main electrodes, a channel region formed between the main electrodes and a capacitor connected between a control region serving as a photocell and one of the row lines.

46. 发明授权

US4626916A Solid state image pickup device 失效
标题翻译：固态图像拾取装置
公开(公告)号：US4626916A
公开(公告)日：1986-12-02
申请号：US556050
申请日：1983-11-29
申请人： Toyokazu Mizoguchi , Jun-ichi Nishizawa , Sohbe Suzuki , Takashige Tamamushi
发明人： Toyokazu Mizoguchi , Jun-ichi Nishizawa , Sohbe Suzuki , Takashige Tamamushi
IPC分类号： H01L27/14 , H01L27/146 , H04N5/30 , H04N5/335 , H04N5/341 , H04N5/353 , H04N5/357 , H04N5/374 , H04N3/14
CPC分类号： H04N5/30 , H01L27/14679 , H04N3/1512
摘要： A solid state image pickup device having a shutter function is disclosed. The device comprises a plurality of picture cells each having a static induction transistor arranged in a matrix. The device further comprises a plurality of gate signal lines for simultaneously supplying gate signals to the picture cells placed on respective rows of the matrix, a vertical scanning register for generating and scanning the gate signals, a plurality of signal readout lines for reading out light signals stored in the picture cells placed on respective columns of the matrix, a shift register for simultaneously and temporarily storing read out signals and converting them into time series signals, a device connected between the signal readout means and the temporary storage means for controlling the connection therebetween.
摘要翻译：公开了一种具有快门功能的固态图像拾取装置。该装置包括多个图形单元，每个图形单元具有以矩阵形式布置的静态感应晶体管。该装置还包括多个栅极信号线，用于同时向放置在矩阵的相应行上的图像单元提供栅极信号，用于产生和扫描栅极信号的垂直扫描寄存器，用于读出光信号的多条信号读出线存储在放置在矩阵的相应列的图像单元中的移位寄存器，用于同时并临时存储读出的信号并将其转换为时间序列信号的移位寄存器，连接在信号读出装置和用于控制其间的连接的临时存储装置之间的装置。

47. 发明授权

US4616249A Solid state image pick-up element of static induction transistor type 失效
标题翻译：静态感应晶体管型固态摄像元件
公开(公告)号：US4616249A
公开(公告)日：1986-10-07
申请号：US555988
申请日：1983-11-29
申请人： Jun-ichi Nishizawa , Tsutomu Nakamura
发明人： Jun-ichi Nishizawa , Tsutomu Nakamura
IPC分类号： H01L29/80 , H01L27/146 , H01L27/14 , H01L31/00
CPC分类号： H01L27/14679
摘要： In a solid state image pick-up element of static induction transistor type having an n.sup.+ source region, an n.sup.+ drain region, an n.sup.- channel region formed between the source and drain regions and a p.sup.+ signal storing gate region formed in the channel region for storing charge carriers induced in the channel region in response to light input, an n.sup.+ resetting region is formed in the signal storing gate region to form a p-n junction therebetween and an electrode is provided on the resetting region to control a bias voltage applied to the resetting region. Upon a resetting operation, when the p-n junction is selectively biased in the forward direction, it is possible to completely discharge charge carriers stored in thegate region through the resetting region in an accurate manner. Since the resetting region is formed in the signal storing gate region, the integration density is not reduced.
摘要翻译：在具有n +源极区域，n +漏极区域，形成在源极区域和漏极区域之间的n沟道区域的静态感应晶体管类型的固体摄像元件和形成在沟道区域中的p +信号存储栅极区域存储响应于光输入在沟道区域中感应的电荷载流子，在信号存储栅极区域中形成n +复位区域以在其间形成pn结，并且在复位区域上设置电极以控制施加到复位的偏置电压地区。在复位操作中，当p-n结被选择性地向正方向偏置时，可以以准确的方式通过复位区域完全放电存储在门区域中的电荷载流子。由于在信号存储栅极区域中形成复位区域，所以不降低积分密度。

48. 发明授权

US4506281A GaAs semiconductor device 失效
标题翻译： GaAs半导体器件
公开(公告)号：US4506281A
公开(公告)日：1985-03-19
申请号：US295816
申请日：1981-08-24
申请人： Jun-ichi Nishizawa , Tadahiro Ohmi
发明人： Jun-ichi Nishizawa , Tadahiro Ohmi
IPC分类号： H01L29/80 , H01L21/314 , H01L21/8222 , H01L21/8226 , H01L21/8252 , H01L27/02 , H01L27/06 , H01L27/082 , H01L29/739 , H03K19/094 , H01J27/02
CPC分类号： H01L21/8252 , H01L21/3144 , H01L27/0225 , H01L29/739
摘要： This invention relates to a GaAs semiconductor device and more particularly to a GaAs static induction transistor integrated circuit which operates at a very high speed. Gallium arsenide has the features that the mobility of electrons is higher than that in silicon and that the band structure has a direct gap. The mobility of electrons in gallium arsenide is several times as high as that in silicon; this is very suitable for the manufacture of a semiconductor device of high-speed operation. Further, since gallium arsenide has the direct gap, the electron-hole recombination rate is high and the minority carrier storage effect is extremely small. By causing the recombination at the direct gap, light emission can be achieved more efficiently. Accordingly, a light receiving and emitting semiconductor device can be obtained through the use of gallium arsenide. As the propagation velocity of light is very fast, signal transfer between semiconductor chips can be achieved at ultra-high speed. By combining this with the high mobility of electrons in gallium arsenide, an ultra-high speed logical operation device can be realized.
摘要翻译：本发明涉及一种GaAs半导体器件，更具体地说，涉及以非常高的速度工作的GaAs静态感应晶体管集成电路。砷化镓具有电子迁移率高于硅中的迁移率，并且带结构具有直接间隙的特征。砷化镓中电子的迁移率是硅中的几倍; 这非常适合制造高速运行的半导体器件。此外，由于砷化镓具有直接间隙，电子 - 空穴复合率高，少数载流子的保存效果极小。通过在直接间隙引起复合，可以更有效地实现发光。因此，可以通过使用砷化镓来获得光接收和发射半导体器件。由于光的传播速度非常快，半导体芯片之间的信号传输可以以超高速度实现。通过将其与砷化镓中的电子的高迁移率组合，可以实现超高速逻辑运算装置。

49. 发明授权

US4504847A Static induction type semiconductor device 失效
标题翻译：静电感应式半导体器件
公开(公告)号：US4504847A
公开(公告)日：1985-03-12
申请号：US386313
申请日：1982-06-08
申请人： Jun-ichi Nishizawa
发明人： Jun-ichi Nishizawa
IPC分类号： H01L29/10 , H01L29/739 , H01L29/772 , H01L29/80
CPC分类号： H01L29/7392 , H01L29/1025 , H01L29/7722
摘要： In a static induction type semiconductor device comprising a semiconductor region having one conductivity type and a low impurity concentration and gate regions having an opposite conductivity type and a high impurity concentration formed in the semiconductor region to thereby define a channel region between these gate regions, there is provided a subsidiary semiconductor region having the one conductivity type and a relatively high impurity concentration either around each gate region to leave an effective channel region in the semiconductor region, or adjacent to the effective channel region in the entire channel region on the drain side. By so constructing the device, this effective channel region has a relatively low potential difference even when the channel region is completely depleted, and provides a relatively wide current path. The subsidiary semiconductor regions establish a relatively high potential difference near the gate regions so that the distance between the gate regions can be made substantially small. In case the subsidiary semiconductor regions are provided around the gate regions, the built-in potential at the junction will become large so that, even at the time of forward biasing, the minority carrier injection from the gate to the channel will become small. Also, this composite channel structure can be effectively applied to recessed gate device and split gate device as well.
摘要翻译：在具有一个导电类型和低杂质浓度的半导体区域和形成在该半导体区域中具有相反导电类型和高杂质浓度的栅区的静电感应型半导体器件中，由此限定这些栅区之间的沟道区，在每个栅极区域周围提供具有一种导电类型和相对高的杂质浓度的辅助半导体区域，以在半导体区域中留下有效沟道区域，或者在漏极侧的整个沟道区域中与有效沟道区域相邻。通过构造该器件，即使当沟道区域完全耗尽时，该有效沟道区域也具有相对较低的电位差，并且提供相对较宽的电流路径。辅助半导体区域在栅极区域附近建立相对高的电位差，使得栅极区域之间的距离可以被大大地减小。在辅助半导体区域设置在栅极区域周围的情况下，接合处的内置电位变大，使得即使在向前偏置时，从栅极到沟道的少数载流子注入也将变小。此外，该复合沟道结构也可以有效地应用于凹陷栅极器件和分离栅极器件。

50. 发明授权

US4482910A Heterojunction emitter transistor with saturation drift velocity gradient in base 失效
标题翻译：基极具有饱和漂移速度梯度的异质结发射极晶体管
公开(公告)号：US4482910A
公开(公告)日：1984-11-13
申请号：US574648
申请日：1984-01-30
申请人： Jun-ichi Nishizawa , Tadahiro Ohmi
发明人： Jun-ichi Nishizawa , Tadahiro Ohmi
IPC分类号： H01L29/73 , H01L21/331 , H01L29/165 , H01L29/205 , H01L29/76 , H01L29/203 , H01L29/72
CPC分类号： H01L29/7606 , H01L29/165
摘要： A thermionic emission transistor comprising: an emitter region formed with a semiconductor material having a first conductivity type and a high impurity concentration; a collector region formed with a semiconductor material having a first conductivity type and a high impurity concentration; a base region made of a semiconductor material having a second conductivity type opposite to said first conductivity type and a high impurity concentration, that portion of said emitter region located adjacent to said base region having an energy band gap broader than that of the base region, that portion of said base region located adjacent to the emitter region having an impurity concentration of about 3.times.10.sup.18 cm.sup.-3 or more. Such new transistor has a large transconductance and can be operated with a very large current gain in spite of a very small size of the whole device, and is very suitable for integrated circuit. This transistor requires a small driving power and has a large capability of driving subsequent stages and load, and allows a number of fan-outs is taken and the operating speed is very high.
摘要翻译：一种热离子发射晶体管，包括：发射区，其形成有具有第一导电类型和高杂质浓度的半导体材料; 形成有具有第一导电类型和高杂质浓度的半导体材料的集电极区域; 由具有与所述第一导电类型相反的第二导电类型和高杂质浓度的半导体材料制成的基极区域，位于所述基极区域附近的所述发射极区域的部分具有比基极区域更宽的能带隙，所述基极区域的位于发射极区域附近的部分具有约3×10 18 cm -3以上的杂质浓度。这种新晶体管具有大的跨导，并且尽管整个器件的尺寸非常小，但可以以非常大的电流增益来操作，并且非常适合于集成电路。该晶体管需要小的驱动功率，并且具有驱动后续级和负载的大的能力，并且允许采用多个扇出并且操作速度非常高。

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