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    • 47. 发明授权
    • Memory reading method for resistance drift mitigation
    • 电阻漂移缓解的记忆读取方法
    • US07929338B2
    • 2011-04-19
    • US12392032
    • 2009-02-24
    • Michele M. FranceschiniJohn P. KaridisLuis A. Lastras
    • Michele M. FranceschiniJohn P. KaridisLuis A. Lastras
    • G11C11/00
    • G11C13/004G11C11/56G11C11/5678G11C13/0004G11C13/0033G11C2013/0052
    • Techniques for reading phase change memory that mitigate resistance drift. One contemplated method includes apply a plurality of electrical input signals to the memory cell. The method includes measuring a plurality of electrical output signals from the memory cell resulting from the plurality of electrical input signals. The method includes calculating an invariant component of the plurality of electrical output signals dependent on the configuration of amorphous material in the memory cell. The method also includes determining a memory state of the memory cell based on the invariant component. In one embodiment of the invention, the method further includes mapping the plurality of electrical output signals to a measurements region of a plurality of measurements regions. The measurements regions correspond to memory states of the memory cell.
    • 读取相变存储器的技术,减轻电阻漂移。 一种预期的方法包括将多个电输入信号应用于存储器单元。 该方法包括从多个电输入信号测量来自存储器单元的多个电输出信号。 该方法包括根据存储单元中非晶材料的配置来计算多个电输出信号的不变分量。 该方法还包括基于不变分量来确定存储器单元的存储器状态。 在本发明的一个实施例中,该方法还包括将多个电输出信号映射到多个测量区域的测量区域。 测量区域对应于存储器单元的存储器状态。