会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 9. 发明授权
    • Planar phase-change memory cell with parallel electrical paths
    • 具有并联电路径的平面相变存储单元
    • US08861266B2
    • 2014-10-14
    • US13619473
    • 2012-09-14
    • Michele M. FranceschiniJohn P. Karidis
    • Michele M. FranceschiniJohn P. Karidis
    • G11C11/00H01L45/00G11C8/10G11C11/56G11C13/00
    • G11C8/10G11C11/5678G11C13/0004G11C13/0069G11C2013/0083H01L27/2463H01L45/06H01L45/1226H01L45/144H01L45/1675
    • A method for operating a phase change memory that includes initializing a memory cell that includes: a first conductive electrode having a length greater than its width and an axis aligned with the length; a second conductive electrode having an edge oriented at an angle to the axis of the first conductive electrode; an insulator providing a separation distance between an end of the first conductive electrode and the edge of the second conductive electrode; and a phase change material covering a substantial portion of the first conductive electrode and at least a portion of the second conductive electrode. The initializing the memory cell includes creating a first amorphous material region in the phase change material. An active crystalline material region is created inside the first amorphous material region. Information is stored in the memory cell by creating a second amorphous material region inside the active crystalline material region.
    • 一种用于操作相变存储器的方法,包括初始化存储单元,所述存储单元包括:具有大于其宽度的长度的第一导电电极和与所述长度对准的轴线; 第二导电电极,其具有与第一导电电极的轴成一定角度的边缘; 绝缘体,其在所述第一导电电极的端部和所述第二导电电极的边缘之间提供间隔距离; 以及覆盖所述第一导电电极的主要部分和所述第二导电电极的至少一部分的相变材料。 初始化存储单元包括在相变材料中形成第一非晶态材料区域。 在第一无定形材料区域内形成活性结晶材料区域。 通过在活性结晶材料区域内产生第二非晶态材料区域将信息存储在存储器单元中。