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41. 发明申请

US20130087452A1 PROCESS KIT FOR RF PHYSICAL VAPOR DEPOSITION 审中-公开
公开(公告)号：US20130087452A1
公开(公告)日：2013-04-11
申请号：US13662391
申请日：2012-10-26
申请人： Lara Hawrylchak , Kirankumar Savandaiah , Muhammed M. Rasheed , Rongjun Wang , Adolph Miller Allen , Zhigang Xie
发明人： Lara Hawrylchak , Kirankumar Savandaiah , Muhammed M. Rasheed , Rongjun Wang , Adolph Miller Allen , Zhigang Xie
IPC分类号： H01L21/67
CPC分类号： H01L21/67017 , C23C14/34 , C23C14/564 , H01J37/3408 , H01J37/3447
摘要： Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region.

42. 发明申请

US20120138457A1 ENCAPSULATED SPUTTERING TARGET 有权
标题翻译：封装溅射目标
公开(公告)号：US20120138457A1
公开(公告)日：2012-06-07
申请号：US13397184
申请日：2012-02-15
申请人： LARA HAWRYLCHAK , Xianmin Tang , Vijay Parhke , Rongjun Wang
发明人： LARA HAWRYLCHAK , Xianmin Tang , Vijay Parhke , Rongjun Wang
IPC分类号： C23C14/34
CPC分类号： C23C14/3407
摘要： Embodiments of the invention provide encapsulated sputtering targets for physical vapor deposition. In one embodiment, an encapsulated target contains a target layer containing a first metal or an oxide of the first metal disposed over a backing plate, an adhesion interlayer disposed between the target layer and the backing plate, and an encapsulation layer containing a second metal or an oxide of the second metal disposed over the target layer and an annular sidewall of the backing plate. The target layer is encapsulated by the backing plate and the encapsulation layer and the first metal is different than the second metal. In some examples, the first metal is lanthanum or lithium and the target layer contains metallic lanthanum, lanthanum oxide, or metallic lithium. In other examples, the second metal is titanium or aluminum and the encapsulation layer contains metallic titanium, titanium oxide, metallic aluminum, or aluminum oxide.
摘要翻译：本发明的实施例提供用于物理气相沉积的封装溅射靶。在一个实施方案中，包封的靶含有包含设置在背板上的第一金属或第一金属的氧化物的目标层，设置在靶层和背衬板之间的粘合中间层，以及包含第二金属或设置在目标层上的第二金属的氧化物和背板的环形侧壁。目标层被背板封装，并且封装层和第一金属不同于第二金属。在一些实例中，第一金属是镧或锂，靶层含有金属镧，氧化镧或金属锂。在其他实例中，第二金属是钛或铝，并且包封层含有金属钛，氧化钛，金属铝或氧化铝。

43. 发明申请

US20120103257A1 DEPOSITION RING AND ELECTROSTATIC CHUCK FOR PHYSICAL VAPOR DEPOSITION CHAMBER 有权
标题翻译：用于物理蒸气沉积室的沉积环和静电吸盘
公开(公告)号：US20120103257A1
公开(公告)日：2012-05-03
申请号：US13280771
申请日：2011-10-25
申请人： Muhammad Rasheed , Keith A. Miller , Rongjun Wang
发明人： Muhammad Rasheed , Keith A. Miller , Rongjun Wang
IPC分类号： C23C16/458 , C23C16/04 , C23C16/44
CPC分类号： C23C14/50 , C23C14/3407 , C23C14/564 , C23C16/4585 , H01L21/68735
摘要： Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a deposition ring and a pedestal assembly. The components of the process kit work alone, and in combination, to significantly reduce their effects on the electric fields around a substrate during processing.
摘要翻译：本发明的实施例一般涉及用于半导体处理室的处理套件和具有套件的半导体处理室。更具体地，本文所述的实施例涉及包括沉积环和基座组件的处理套件。处理套件的组件单独工作，并且组合工作，以显着降低其在处理期间对基板周围的电场的影响。

44. 发明授权

US08129280B2 Substrate device having a tuned work function and methods of forming thereof 有权
标题翻译：具有调谐功能的基板装置及其形成方法
公开(公告)号：US08129280B2
公开(公告)日：2012-03-06
申请号：US12508820
申请日：2009-07-24
申请人： Rongjun Wang , Xianmin Tang , Dengliang Yang , Zhendong Liu , Srinivas Gandikota
发明人： Rongjun Wang , Xianmin Tang , Dengliang Yang , Zhendong Liu , Srinivas Gandikota
IPC分类号： H01L21/311
CPC分类号： H01L29/4966 , H01L21/28088 , H01L21/823842 , H01L21/823857 , H01L29/517
摘要： Substrate devices having tuned work functions and methods of forming thereof are provided. In some embodiments, forming devices on substrates may include depositing a dielectric layer atop a substrate having a conductivity well; depositing a work function layer comprising titanium aluminum or titanium aluminum nitride having a first nitrogen composition atop the dielectric layer; etching the work function layer to selectively remove at least a portion of the work function layer from atop the dielectric layer; depositing a layer comprising titanium aluminum or titanium aluminum nitride having a second nitrogen composition atop the work function layer and the substrate, wherein at least one of the work function layer or the layer comprises nitrogen; etching the layer and the dielectric layer to selectively remove a portion of the layer and the dielectric layer from atop the substrate; and annealing the substrate at a temperature less than about 1500 degrees Celsius.
摘要翻译：提供具有调谐功能的衬底器件及其形成方法。在一些实施例中，在衬底上形成器件可以包括在具有导电性的衬底顶上淀积介电层; 在所述电介质层的顶部沉积包含具有第一氮组成的钛铝或氮化铝钛的功函数层; 蚀刻功函数层以从电介质层顶部选择性地去除功函数层的至少一部分; 在所述功函数层和所述衬底的顶部上沉积包含具有第二氮组成的钛铝或氮化铝钛的层，其中所述功函数层或所述层中的至少一个包含氮; 蚀刻所述层和所述介电层以从所述衬底顶部选择性地去除所述层和所述电介质层的一部分; 并在低于约1500摄氏度的温度下退火衬底。

45. 发明申请

US20100252416A1 Sputtering Target for PVD Chamber 有权
标题翻译： PVD室的溅射靶
公开(公告)号：US20100252416A1
公开(公告)日：2010-10-07
申请号：US12723199
申请日：2010-03-12
申请人： Zhendong Liu , Rongjun Wang , Xianmin Tang , Srinivas Gandikota , Tza-Jing Gung , Muhammad M. Rasheed
发明人： Zhendong Liu , Rongjun Wang , Xianmin Tang , Srinivas Gandikota , Tza-Jing Gung , Muhammad M. Rasheed
IPC分类号： C23C14/34
CPC分类号： C23C14/3407 , H01J37/342 , H01J37/3423
摘要： Target assemblies and PVD chambers including target assemblies are disclosed. The target assembly includes a target that has a concave shaped target. When used in a PVD chamber, the concave target provides more radially uniform deposition on a substrate disposed in the sputtering chamber.
摘要翻译：公开了包括目标组件的目标组件和PVD室。目标组件包括具有凹形目标的目标。当在PVD室中使用时，凹目标在设置在溅射室中的基板上提供更径向均匀的沉积。

46. 发明申请

US20100012480A1 METHOD FOR CONTROLLING RADIAL DISTRIBUTION OF PLASMA ION DENSITY AND ION ENERGY AT A WORKPIECE SURFACE BY MULTI-FREQUENCY RF IMPEDANCE TUNING 有权
标题翻译：通过多频RF阻抗调谐控制工作表面等离子体密度和离子能量的径向分布的方法
公开(公告)号：US20100012480A1
公开(公告)日：2010-01-21
申请号：US12173228
申请日：2008-07-15
申请人： John C. Forster , Daniel J. Hoffman , John A. Pipitone , Xianming Tang , Rongjun Wang
发明人： John C. Forster , Daniel J. Hoffman , John A. Pipitone , Xianming Tang , Rongjun Wang
IPC分类号： C23C14/46
CPC分类号： H01J37/34 , H01J37/32165 , H01J37/3444
摘要： The method of performing physical vapor deposition on a workpiece includes performing at least one of the following: (a) increasing ion density over a workpiece center while decreasing ion density over a workpiece edge by decreasing impedance to ground at a target source power frequency fs through a bias multi-frequency impedance controller relative to the impedance to ground at the source power frequency fs through the side wall; or (b) decreasing ion density over the workpiece center while increasing ion density over the workpiece edge by increasing the impedance to ground at fs through the bias multi-frequency impedance controller relative to the impedance to ground at fs through the side wall.
摘要翻译：在工件上进行物理气相沉积的方法包括执行以下至少一个：（a）在工件中心上增加离子密度，同时通过减小目标源功率频率fs至一个偏置多频阻抗控制器，相对于通过侧壁的源电源频率fs对地的阻抗; 或（b）通过在fs通过偏压多频阻抗控制器相对于通过侧壁的fs处的接地阻抗增加对fs的接地阻抗来增加工件边缘上的离子密度，从而降低工件中心的离子密度。

47. 发明申请

US20100012029A1 APPARATUS FOR CONTROLLING RADIAL DISTRIBUTION OF PLASMA ION DENSITY AND ION ENERGY AT A WORKPIECE SURFACE BY MULTI-FREQUENCY RF IMPEDANCE TUNING 有权
标题翻译：用于通过多频RF阻抗调谐控制工作表面等离子体密度和离子能量的径向分布的装置
公开(公告)号：US20100012029A1
公开(公告)日：2010-01-21
申请号：US12173198
申请日：2008-07-15
申请人： John C. FORSTER , Daniel J. Hoffman , John A. Pipitone , Xianmin Tang , Rongjun Wang
发明人： John C. FORSTER , Daniel J. Hoffman , John A. Pipitone , Xianmin Tang , Rongjun Wang
IPC分类号： B05C11/00
CPC分类号： H01J37/32165 , H01J37/32091 , H01J37/34 , H01J37/3444
摘要： In a physical vapor deposition plasma reactor, a multi-frequency impedance controller is coupled between RF ground and one of (a) the bias electrode, (b) the sputter target, the controller providing adjustable impedances at a first set of frequencies, said first set of frequencies including a first set of frequencies to be blocked and a first set of frequencies to be admitted. The first multi-frequency impedance controller includes a set of band pass filters connected in parallel and tuned to said first set of frequencies to be admitted, and a set of notch filters connected in series and tuned to said first set of frequencies to be blocked.
摘要翻译：在物理气相沉积等离子体反应器中，多频阻抗控制器耦合在RF地与（a）偏置电极之一之间，（b）溅射靶，控制器在第一组频率处提供可调阻抗，所述第一包括要阻止的第一组频率和要被接纳的第一组频率的频率集合。第一多频阻抗控制器包括并联连接并被调谐到要被允许的所述第一组频率的一组带通滤波器，以及串联连接并被调谐到要被阻挡的所述第一组频率的一组陷波滤波器。

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