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41. 发明申请

US20130069038A1 LIGHT CONVERTING AND EMITTING DEVICE WITH SUPPRESSED DARK-LINE DEFECTS 有权
标题翻译：具有抑制性暗线缺陷的光转换和发光装置
公开(公告)号：US20130069038A1
公开(公告)日：2013-03-21
申请号：US13698384
申请日：2011-05-31
申请人： Michael A. Haase , Thomas J. Miller , Terry L. Smith , Xiaoguang Sun , Junqing Xie
发明人： Michael A. Haase , Thomas J. Miller , Terry L. Smith , Xiaoguang Sun , Junqing Xie
IPC分类号： H01L33/50
CPC分类号： H01L33/504 , H01L21/02477 , H01L21/0256 , H01L21/02568 , H01L33/08 , H01L33/50
摘要： Light emitting systems are described. Particularly, light emitting systems and light converting components utilized within these systems are described. The light emitting system and components are formed such that dark-line defects do not interfere with the light emitting system efficiency.
摘要翻译：描述发光系统。特别地，描述了在这些系统中使用的发光系统和光转换组件。发光系统和部件形成为使得暗线缺陷不会影响发光系统的效率。

42. 发明授权

US08148742B2 Type II broadband or polychromatic LEDs 有权
标题翻译： II型宽带或多色LED
公开(公告)号：US08148742B2
公开(公告)日：2012-04-03
申请号：US12748956
申请日：2010-03-29
申请人： Thomas J. Miller , Michael A. Haase
发明人： Thomas J. Miller , Michael A. Haase
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , H01L33/08 , H01L33/28
摘要： An LED is provided comprising two or more light-emitting Type II interfaces wherein at least two of the Type II interfaces differ in transition energy by at least 5%, or more typically by at least 10%, and wherein at least one of the Type II interfaces is within a pn junction. Alternately, an LED is provided comprising two or more light-emitting Type II interfaces wherein at least two of the Type II interfaces differ in transition energy by at least 5%, or more typically by at least 10%. The Type II interfaces may include interfaces from a layer which is an electron quantum well and not a hole quantum well, interfaces to a layer which is a hole quantum well and not an electron quantum well; and interfaces that satisfy both conditions simultaneously. The Type II interfaces may be within a pn or pin junction or not within a pn or pin junction. In the later case, emission from the Type II interfaces may be photopumped by a nearby light source. The LED may be a white or near-white light LED. In addition, graphic display devices and illumination devices comprising the semiconductor device according to the present invention are provided.
摘要翻译：提供包括两个或更多个发光II型界面的LED，其中II型界面中的至少两个界面的转换能量不同于至少5％，或更通常至少10％，并且其中至少一种类型 II接口位于pn结内。或者，提供包括两个或更多个发光II型界面的LED，其中至少两个II型界面的跃迁能量不同于至少5％，或更通常至少10％。 II型界面可以包括来自作为电子量子阱而不是空穴量子阱的层的界面，其与作为空穴量子阱而不是电子量子阱的层接合; 和同时满足两个条件的接口。 II型接口可以在pn或pin结内，或者不在pn或pin结内。在后一种情况下，II型接口的发射可能被附近的光源照射。 LED可以是白色或近白色的LED灯。此外，提供了包括根据本发明的半导体器件的图形显示装置和照明装置。

43. 发明申请

US20110150020A1 II-VI MQW VSCEL ON A HEAT SINK OPTICALLY PUMPED BY A GAN LD 失效
标题翻译： II-VI MQW VSCEL在由GAN LD光电泵浦的散热器上
公开(公告)号：US20110150020A1
公开(公告)日：2011-06-23
申请号：US13060554
申请日：2009-08-18
申请人： Michael A. Haase , Thomas J. Miller , Xiaoguang Sun
发明人： Michael A. Haase , Thomas J. Miller , Xiaoguang Sun
IPC分类号： H01S5/347 , H01S5/183 , H01S5/187
CPC分类号： H01S5/041 , B82Y20/00 , H01S5/0215 , H01S5/0217 , H01S5/024 , H01S5/1039 , H01S5/14 , H01S5/18308 , H01S5/2009 , H01S5/2022 , H01S5/2027 , H01S5/309 , H01S5/347 , H01S5/423 , H01S2301/18
摘要： Light sources are disclosed. A disclosed light source includes a III-V based pump light source (170) that includes nitrogen and emits light at a first wavelength. The light source further includes a vertical cavity surface emitting laser (VCSEL) that converts at least a portion of the first wavelength light (174) emitted by the pump light source (170) to at least a partially coherent light at a second wavelength (176). The VCSEL includes first and second mirrors (120, 160) that form an optical cavity for light at the second wavelength. The first mirror (120) is substantially reflective at the second wavelength and includes a first multilayer stack. The second mirror (160) is substantially transmissive at the first wavelength and partially reflective and partially transmissive and the second wavelength. The second mirror includes a second multilayer stack. The VCSEL further includes a semiconductor multilayer stack (130) that is disposed between the first and second mirrors and converts at least a portion of the first wavelength light to the second wavelength light. The semiconductor multilayer stack (130) includes a quantum well that includes a Cd(Mg)ZnSe alloy.
摘要翻译：公开了光源。所公开的光源包括包含氮并发射第一波长的光的基于III-V的泵浦光源（170）。光源还包括垂直腔表面发射激光器（VCSEL），其将由泵浦光源（170）发射的第一波长光（174）的至少一部分转换成第二波长的至少部分相干光（176 ）。 VCSEL包括为第二波长的光形成光腔的第一和第二反射镜（120,160）。第一反射镜（120）在第二波长处基本上是反射性的并且包括第一多层叠层。第二反射镜（160）在第一波长处基本上是透射的，并且在第二波长处是部分反射和部分透射的。第二反射镜包括第二多层叠层。 VCSEL还包括设置在第一和第二反射镜之间并将第一波长光的至少一部分转换成第二波长光的半导体多层堆叠（130）。半导体多层堆叠（130）包括包含Cd（Mg）ZnSe合金的量子阱。

44. 发明申请

US20110101403A1 SEMICONDUCTOR LIGHT CONVERTING CONSTRUCTION 有权
标题翻译：半导体光转换结构
公开(公告)号：US20110101403A1
公开(公告)日：2011-05-05
申请号：US13000598
申请日：2009-06-01
申请人： Michael A. Haase , Jun-Ying Zhang , Thomas J. Miller
发明人： Michael A. Haase , Jun-Ying Zhang , Thomas J. Miller
IPC分类号： H01L33/00 , G02F2/02
CPC分类号： H01L25/0756 , H01L27/14603 , H01L27/14609 , H01L31/1013 , H01L33/44 , H01L33/50 , H01L51/5036 , H01L51/5262 , H01L2924/0002 , H01L2924/09701 , H01L2933/0091 , H01L2924/00
摘要： Semiconductor light converting constructions are disclosed. The semiconductor light converting construction includes a first semiconductor layer for absorbing at least a portion of light at a first wavelength; a semiconductor potential well for converting at least a portion of the light absorbed at the first wavelength to light at a longer second wavelength; and a second semiconductor layer that is capable of absorbing at least a portion of light at the first wavelength. The first semiconductor layer has a maximum first index of refraction at the second wavelength. The second semiconductor layer has a second index of refraction at the second wavelength that is greater than the maximum first index of refraction.
摘要翻译：公开了半导体光转换结构。半导体光转换结构包括用于吸收第一波长的至少一部分光的第一半导体层; 用于将在第一波长处吸收的光的至少一部分转换成更长的第二波长的光的半导体势阱; 以及能够吸收第一波长的至少一部分光的第二半导体层。第一半导体层在第二波长处具有最大的第一折射率。第二半导体层在第二波长处具有大于最大第一折射率的第二折射率。

45. 发明授权

US07902542B2 Adapted LED device with re-emitting semiconductor construction 有权
标题翻译：适应LED发光二极管装置
公开(公告)号：US07902542B2
公开(公告)日：2011-03-08
申请号：US11755010
申请日：2007-05-30
申请人： Michael A. Haase , Catherine A. Leatherdale , Thomas J. Miller , Andrew J. Ouderkirk
发明人： Michael A. Haase , Catherine A. Leatherdale , Thomas J. Miller , Andrew J. Ouderkirk
IPC分类号： H01L29/06
CPC分类号： H01L33/08 , G02F1/133603 , H01L33/502
摘要： An article includes an LED that has an emitting surface. A reemitting semiconductor structure has an emitting surface and converts light emitted by the LED to light of a different wavelength. At least one of the emitting surfaces frustrates total internal reflection.
摘要翻译：一种物品包括具有发射表面的LED。再发射半导体结构具有发光面，将由LED发射的光转换为不同波长的光。至少一个发射表面使整个内部反射受阻。

46. 发明授权

US07737430B2 Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission 失效
公开(公告)号：US07737430B2
公开(公告)日：2010-06-15
申请号：US11553784
申请日：2006-10-27
申请人： Thomas J. Miller , Michael A. Haase , Terry L. Smith , Xiaoguang Sun
发明人： Thomas J. Miller , Michael A. Haase , Terry L. Smith , Xiaoguang Sun
IPC分类号： H01L29/06
CPC分类号： H01L33/08 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/14 , H01L2224/05541 , H01L2224/05005
摘要： An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.

47. 发明授权

US5818859A Be-containing II-VI blue-green laser diodes 失效
标题翻译：含有II-VI蓝绿色激光二极管
公开(公告)号：US5818859A
公开(公告)日：1998-10-06
申请号：US726618
申请日：1996-10-07
申请人： Thomas J. Miller , Michael A. Haase , Paul F. Baude , Michael D. Pashley
发明人： Thomas J. Miller , Michael A. Haase , Paul F. Baude , Michael D. Pashley
IPC分类号： H01S5/00 , H01S5/32 , H01S5/327 , H01S5/34 , H01S5/347 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/347 , H01S2304/02 , H01S5/327 , H01S5/3409
摘要： A II-VI compound semiconductor laser diode includes a plurality of II-VI semiconductor layers forming a pn junction supported by a single crystal GaAs semiconductor substrate. The layers formed in the pn junction include a first cladding layer of a first conductivity type, a second cladding layer of a second conductivity type, and at least a first guiding layer between the first and second cladding layers. A quantum well active layer is positioned within the pn junction. Electrical energy is coupled to the laser diode by first and second electrodes. Various layers in the laser diode are formed using Be.
摘要翻译： II-VI化合物半导体激光二极管包括形成由单晶GaAs半导体衬底支撑的pn结的多个II-VI半导体层。形成在pn结中的层包括第一导电类型的第一包层，第二导电类型的第二包层和在第一和第二包层之间的至少第一引导层。量子阱活性层位于pn结内。电能通过第一和第二电极耦合到激光二极管。使用Be形成激光二极管中的各个层。

48. 发明授权

US5767534A Passivation capping layer for ohmic contact in II-VI semiconductor light transducing device 失效
公开(公告)号：US5767534A
公开(公告)日：1998-06-16
申请号：US804768
申请日：1997-02-24
申请人： Fen-Ren Chien , Michael A. Haase , Thomas J. Miller
发明人： Fen-Ren Chien , Michael A. Haase , Thomas J. Miller
IPC分类号： H01L31/02 , H01L33/28 , H01L33/40 , H01L33/44 , H01S5/028 , H01S5/042 , H01S5/347 , H01L33/00
CPC分类号： H01L33/44 , B82Y20/00 , H01L33/40 , H01S5/347 , H01L33/28 , H01S5/0421
摘要： A II-VI semiconductor device includes a stack of semiconductor layers. An ohmic contact is provided that electrically couples to the stack. The ohmic contact has an oxidation rate when exposed to an oxidizing substance. A passivation capping layer overlies the ohmic contact and has an oxidation rate that is less than the oxidation rate of the ohmic contact.

49. 发明申请

US20120097983A1 RE-EMITTING SEMICONDUCTOR CARRIER DEVICES FOR USE WITH LEDS AND METHODS OF MANUFACTURE 有权
标题翻译：重新发射用于LED的半导体载体装置及其制造方法
公开(公告)号：US20120097983A1
公开(公告)日：2012-04-26
申请号：US13264487
申请日：2010-05-03
申请人： Terry L. Smith , Catherine A. Leatherdale , Michael A. Haase , Thomas J. Miller , Xiaoguang Sun , Zhaohui Yang , Todd A. Ballen , Amy S. Barnes
发明人： Terry L. Smith , Catherine A. Leatherdale , Michael A. Haase , Thomas J. Miller , Xiaoguang Sun , Zhaohui Yang , Todd A. Ballen , Amy S. Barnes
IPC分类号： H01L33/60 , H01L33/48
CPC分类号： H01L31/055 , H01L33/0079 , H01L33/502 , H01L2224/48463 , H01L2933/0041 , H05B33/10 , Y02E10/52
摘要： Re-emitting semiconductor constructions (RSCs) for use with LEDs, and related devices, systems, and methods are disclosed. A method of fabrication includes providing a semiconductor substrate, forming on a first side of the substrate a semiconductor layer stack, attaching a carrier window to the stack, and removing the substrate after the attaching step. The stack includes an active region adapted to convert light at a first wavelength λ1 to visible light at a second wavelength λ2, the active region including at least a first potential well. The attaching step is carried out such that the stack is disposed between the substrate and the carrier window, which is transparent to the second wavelength λ2. The carrier window may also have a lateral dimension greater than that of the stack. The removal step is carried out so as to provide an RSC carrier device that includes the carrier window and the stack.
摘要翻译：公开了与LED一起使用的重新发射半导体结构（RSCs）以及相关的器件，系统和方法。一种制造方法包括提供半导体衬底，在衬底的第一侧上形成半导体层堆叠，将载体窗口附接到堆叠，以及在附接步骤之后移除衬底。所述堆叠包括适于将第一波长λ1的光转换成第二波长λ2的可见光的有源区，所述有源区至少包括第一势阱。执行安装步骤使得堆叠被布置在对第二波长λ2透明的基板和载体窗口之间。载体窗口也可以具有大于堆叠的横向尺寸的横向尺寸。执行去除步骤以提供包括载体窗口和堆叠的RSC载体装置。

50. 发明申请

US20110186877A1 LIGHT EMITTING DIODE WITH BONDED SEMICONDUCTOR WAVELENGTH CONVERTER 审中-公开
标题翻译：具有粘结半导体波长转换器的发光二极管
公开(公告)号：US20110186877A1
公开(公告)日：2011-08-04
申请号：US12995655
申请日：2009-04-23
申请人： Michael A. Haase , Thomas J. Miller , Andrew J. Ouderkirk , Catherine A. Leatherdale , Tommie W. Kelley
发明人： Michael A. Haase , Thomas J. Miller , Andrew J. Ouderkirk , Catherine A. Leatherdale , Tommie W. Kelley
IPC分类号： H01L33/50 , H01L33/08 , H01L33/26 , B82Y40/00
CPC分类号： H01L33/08 , H01L25/0756 , H01L33/504 , H01L2924/0002 , H01L2924/00
摘要： An electroluminescent device emits light at a pump wavelength. A first photoluminescent element covers first and second regions of the electroluminescent device and converts at least some of the pump light from the first region of the electroluminescent device to light at a first wavelength. A second photoluminescent element covers the second region of the electroluminescent device without covering the first region of the electroluminescent device and converts at least some of the light of the pump wavelength to light at a second wavelength different from the first wavelength. In some embodiments the first and second photoluminescent elements convert substantially all of the pump light incident from the first and second regions of the electroluminescent device respectively. An etch-stop layer may separate the first and second photoluminescent elements.
摘要翻译：电致发光器件以泵浦波长发光。第一光致发光元件覆盖电致发光器件的第一和第二区域，并将来自电致发光器件的第一区域的至少一些泵浦光转换成第一波长的光。第二光致发光元件覆盖电致发光器件的第二区域而不覆盖电致发光器件的第一区域，并将泵波长的至少一些光转换成不同于第一波长的第二波长的光。在一些实施例中，第一和第二光致发光元件基本上分别从电致发光器件的第一和第二区域入射的所有泵浦光转换。蚀刻停止层可以分离第一和第二光致发光元件。

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