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41. 发明授权

US08690220B2 Structure of lift gate for vehicle 有权
标题翻译：车辆升降门结构
公开(公告)号：US08690220B2
公开(公告)日：2014-04-08
申请号：US13408517
申请日：2012-02-29
申请人： Natsuki Tsukiyama , Koichi Matsumoto , Issei Harima , Naoyuki Ikemizu , Tsuyoshi Igura , Junichiro Yamashita
发明人： Natsuki Tsukiyama , Koichi Matsumoto , Issei Harima , Naoyuki Ikemizu , Tsuyoshi Igura , Junichiro Yamashita
IPC分类号： B60J5/10
CPC分类号： B62D35/007 , B60J5/101
摘要： An inner panel of a lift gate includes an outer-frame forming portion comprising a pair of side edge frame portions including a pair of pillar portions and a lower end frame portion integrally formed at the side frame portions, an inner-frame forming portion formed at a lower edge portion of a window opening to connect to the outer-frame forming portion, and a panel portion covering over a portion enclosed by the outer-frame forming portion and the inner-frame forming portion. The panel portion comprises an outside panel portion provided to contact the outer panel and an inside panel portion integrally formed at the outside panel portion to connect to the outside panel portion and project toward a vehicle-compartment side beyond the outside panel portion and connects to the outer-frame forming portion and the inner-frame forming portion of said inner panel.
摘要翻译：提升门的内板包括外框形成部分，该外框形成部分包括一对侧边框架部分，该侧边框架部分包括一对立柱部分和在侧框架部分一体形成的下端框架部分;内框架形成部分形成在窗口开口的下边缘部分连接到外框形成部分，以及覆盖在由外框形成部分和内框架形成部分包围的部分上的面板部分。面板部分包括设置成接触外板的外板部分和一体地形成在外板部分处的内板部分，以连接到外板部分并且朝向车厢侧突出超过外板部分并且连接到外框形成部分和所述内板的内框形成部分。

42. 发明申请

US20130187838A1 PLASMA DISPLAY PANEL AND REAR PLATE FOR PLASMA DISPLAY PANEL 审中-公开
标题翻译：等离子显示面板和等离子体显示面板的后板
公开(公告)号：US20130187838A1
公开(公告)日：2013-07-25
申请号：US13574722
申请日：2012-01-24
申请人： Kenji Kiriyama , Koichi Mizuno , Koichi Matsumoto , Masanori Suzuki
发明人： Kenji Kiriyama , Koichi Mizuno , Koichi Matsumoto , Masanori Suzuki
IPC分类号： G09G3/28
CPC分类号： H01J11/12 , H01J11/46
摘要： A rear plate has a display region, and a non-display region provided around the display region. The rear plate further has a plurality of connection terminal parts, a plurality of middle connection wiring groups, a plurality of electrodes, an insulating layer, and a barrier rib. The plurality of connection terminal parts is provided in the non-display region so as to be spaced out each other. The plurality of middle connection wiring groups is provided in the non-display region so as to be spaced out each other. The middle connection wiring group includes a plurality of middle connection wirings. A dummy part is provided between the plurality of middle connection wiring groups. A lower layer of the barrier rib has the electrode and at least one part of the middle connection wiring group and at least one part of the dummy part.
摘要翻译：后板具有显示区域和设置在显示区域周围的非显示区域。后板还具有多个连接端子部，多个中间连接配线组，多个电极，绝缘层和隔壁。多个连接端子部分设置在非显示区域中以便彼此间隔开。多个中间连接配线组被设置在非显示区域中以彼此间隔开。中间连接配线组包括多个中间连接配线。在多个中间连接配线组之间设置有虚拟部。隔壁的下层具有电极和中间连接配线组的至少一部分和虚拟部的至少一部分。

43. 发明申请

US20110300694A1 ELECTRODE CIRCUIT, FILM FORMATION DEVICE, ELECTRODE UNIT, AND FILM FORMATION METHOD 审中-公开
标题翻译：电极电路，薄膜形成装置，电极单元和薄膜形成方法
公开(公告)号：US20110300694A1
公开(公告)日：2011-12-08
申请号：US13128430
申请日：2009-11-12
申请人： Koichi Matsumoto , Hidenori Yoda , Satohiro Okayama , Yawara Morioka , Taro Yajima
发明人： Koichi Matsumoto , Hidenori Yoda , Satohiro Okayama , Yawara Morioka , Taro Yajima
IPC分类号： C23C16/509 , H01L21/20 , C30B28/12
CPC分类号： H01J37/32183 , C23C16/4583 , C23C16/5096 , H01J37/32091 , H01L21/67161 , H01L21/67173 , H01L21/6719 , H01L21/67207 , H01L21/67712 , H01L21/67736 , H01L21/67754 , H01L31/03685 , H01L31/03762 , H01L31/072 , H01L31/0725 , H01L31/1804 , H01L31/1876 , H01L31/202 , H05H1/30 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： An electrode circuit for plasma CVD includes: an alternating-current source; a matching circuit that is connected to the alternating-current source; and parallel plate electrodes that are constituted of a pair of an anode electrode and a cathode electrode, in which the anode electrode and the cathode electrode are arranged such that electrode surfaces of the anode electrode and the cathode electrode face each other. The matching circuit, the parallel plate electrodes, and plasma generated by the parallel plate electrodes form a balanced circuit.
摘要翻译：用于等离子体CVD的电极电路包括：交流电源; 连接到交流电源的匹配电路; 以及由一对阳极电极和阴极电极构成的平行板电极，其中阳极电极和阴极电极布置成使得阳极电极和阴极电极的表面彼此面对。匹配电路，平行板电极和由平行板电极产生的等离子体形成平衡电路。

44. 发明申请

US20110120370A1 THIN-FILM SOLAR CELL MANUFACTURING APPARATUS 审中-公开
标题翻译：薄膜太阳能电池制造设备
公开(公告)号：US20110120370A1
公开(公告)日：2011-05-26
申请号：US12995277
申请日：2009-06-03
申请人： Yasuo Shimizu , Hideyuki Ogata , Koichi Matsumoto , Takafumi Noguchi , Jouji Wakamori , Satohiro Okayama , Yawara Morioka , Noriyasu Sugiyama , Takashi Shigeta , Hiroyuki Kurihara
发明人： Yasuo Shimizu , Hideyuki Ogata , Koichi Matsumoto , Takafumi Noguchi , Jouji Wakamori , Satohiro Okayama , Yawara Morioka , Noriyasu Sugiyama , Takashi Shigeta , Hiroyuki Kurihara
IPC分类号： C23C16/52 , C23C16/00
CPC分类号： H01L21/67754 , C23C16/4401 , C23C16/4587 , C23C16/509 , C23C16/54 , H01L21/67161 , H01L21/67167 , H01L21/67173 , H01L21/67781 , H01L31/0687 , H01L31/182 , H01L31/1824 , Y02E10/545 , Y02E10/546 , Y02P70/521
摘要： A thin-film solar cell manufacturing apparatus includes a film forming chamber which stores a substrate; and an electrode unit which performs film formation using a CVD method on the substrate in the film forming chamber. The electrode unit has an anode and a cathode; and a side wall portion which holds the anode and the cathode and forms a part of a wall portion of the film forming chamber, and is attachable to and detachable from the film forming chamber.
摘要翻译：薄膜太阳能电池制造装置包括：存储基板的成膜室; 以及电极单元，其在成膜室中的基板上使用CVD法进行成膜。电极单元具有阳极和阴极; 以及侧壁部分，其保持阳极和阴极并形成成膜室的壁部分的一部分，并且可附接到成膜室并从膜形成室拆卸。

45. 发明授权

US07943254B2 Anode and battery 有权
标题翻译：阳极和电池
公开(公告)号：US07943254B2
公开(公告)日：2011-05-17
申请号：US11684871
申请日：2007-03-12
申请人： Takakazu Hirose , Masayuki Iwama , Koichi Matsumoto , Isamu Konishiike , Kenichi Kawase
发明人： Takakazu Hirose , Masayuki Iwama , Koichi Matsumoto , Isamu Konishiike , Kenichi Kawase
IPC分类号： H01M4/62
CPC分类号： H01M4/38 , H01M4/0421 , H01M4/134 , H01M4/364 , H01M4/366 , H01M4/386 , H01M10/0525
摘要： An anode capable of relaxing the stress concentration and improving the characteristics and a battery using it are provided. The anode includes an anode current collector and an anode active material layer containing silicon (Si) as an element, wherein an anode active material layer has a metal element increasing and decreasing region in which a metal element is contained as an element, and a concentration of the metal element is increased and then decreased in a thickness direction.
摘要翻译：提供能够缓和应力集中和提高特性的阳极和使用它的电池。阳极包括阳极集电体和含有硅（Si）作为元素的负极活性物质层，其中阳极活性物质层具有金属元素增加和减少的区域，其中含有金属元素作为元素，并且浓度的金属元素增加，然后在厚度方向上减小。

46. 发明申请

US20100223360A1 COMMUNICATION SYSTEM, COMMUNICATION OPTIMIZING APPARATUS, AND COMMUNICATION NETWORK ESTABLISHING METHOD USED IN THEM 审中-公开
标题翻译：通信系统，通信优化设备和通信网络建立方法
公开(公告)号：US20100223360A1
公开(公告)日：2010-09-02
申请号：US12677869
申请日：2008-09-11
申请人： Yoshitaka Nakayama , Takeaki Minamizawa , Koichi Matsumoto
发明人： Yoshitaka Nakayama , Takeaki Minamizawa , Koichi Matsumoto
IPC分类号： G06F15/16
CPC分类号： H04L12/56 , H04L29/12594 , H04L41/0823 , H04L61/301 , H04L61/3085 , H04L65/1006 , H04L65/1073 , H04L65/80 , H04L67/02
摘要： A communication system comprises a communication optimizing apparatus 4 that performs, when a user terminal accesses a server via an access-controlled network, settings and processes required for obtaining a permission of using the network.
摘要翻译：通信系统包括通信优化装置4，当用户终端经由访问控制的网络访问服务器时，执行用于获得使用网络的许可所需的设置和处理。

47. 发明申请

US20100203690A1 MOSFET HAVING A CHANNEL REGION WITH ENHANCED STRESS AND METHOD OF FORMING SAME 失效
标题翻译：具有增强应力的通道区域的MOSFET及其形成方法
公开(公告)号：US20100203690A1
公开(公告)日：2010-08-12
申请号：US12767964
申请日：2010-04-27
申请人： Koichi Matsumoto
发明人： Koichi Matsumoto
IPC分类号： H01L21/8238
CPC分类号： H01L21/823807 , H01L29/045 , H01L29/665 , H01L29/7843 , H01L29/7849
摘要： A semiconductor device is provided that includes a semiconductor substrate, an n-channel MOSFET formed on the substrate and a p-channel MOSFET formed on the substrate. A first layer is formed to cover the n-channel MOSFET, wherein the first layer has a first flexure-induced stress. A second layer is formed to cover the p-channel MOSFET, wherein the second layer has a second flexure-induced stress.
摘要翻译：提供一种半导体器件，其包括半导体衬底，形成在衬底上的n沟道MOSFET和形成在衬底上的p沟道MOSFET。形成第一层以覆盖n沟道MOSFET，其中第一层具有第一挠曲引起的应力。形成第二层以覆盖p沟道MOSFET，其中第二层具有第二挠曲引起的应力。

48. 发明申请

US20090061079A1 EVAPORATION APPARATUS, METHOD OF MANUFACTURING ANODE USING SAME, AND METHOD OF MANUFACTURING BATTERY USING SAME 有权
标题翻译：蒸发装置，使用其制造阳极的方法以及使用其制造电池的方法
公开(公告)号：US20090061079A1
公开(公告)日：2009-03-05
申请号：US12197731
申请日：2008-08-25
申请人： Isamu KONISHIIKE , Chisato Okina , Keisuke Tanabe , Atsuhiro Abe , Hidetoshi Nishiyama , Kenichi Kawase , Shunsuke Kurasawa , Koichi Matsumoto
发明人： Isamu KONISHIIKE , Chisato Okina , Keisuke Tanabe , Atsuhiro Abe , Hidetoshi Nishiyama , Kenichi Kawase , Shunsuke Kurasawa , Koichi Matsumoto
IPC分类号： B05D1/32 , B05C11/00
CPC分类号： C23C14/562 , H01M4/0421 , H01M4/131 , H01M4/1395 , H01M4/661 , H01M10/052 , H01M2200/106
摘要： An evaporation apparatus that is capable of stably forming a good quality thin film and is highly suitable for mass production is provided. The evaporation apparatus include an evaporation source discharging an evaporation material by heating, a retention member retaining an evaporation object, and a heat shield member that is located between the evaporation source and the evaporation object retained by the retention member, has an opening for passing the evaporation material in a state of vapor phase from the evaporation source to the evaporation object, and shields the evaporation object from part of radiation heat of the evaporation source. The heat shield member is located closer to the evaporation source than to the retention member.
摘要翻译：提供能够稳定地形成优质薄膜并且高度适合批量生产的蒸发装置。蒸发装置包括通过加热排出蒸发材料的蒸发源，保持蒸发物体的保持构件和位于蒸发源和由保持构件保留的蒸发物体之间的隔热构件，具有用于使蒸发物质通过的开口从蒸发源到蒸发物体处于气相状态的蒸发材料，并且将蒸发物体与蒸发源的辐射热屏蔽。隔热构件位于比保持构件更靠近蒸发源的位置。

49. 发明申请

US20080206651A1 ANODE, METHOD OF MANUFACTURING IT, AND BATTERY 审中-公开
标题翻译：阳极，其制造方法和电池
公开(公告)号：US20080206651A1
公开(公告)日：2008-08-28
申请号：US12031799
申请日：2008-02-15
申请人： Kenichi Kawase , Koichi Matsumoto , Hideki Nakai , Masayuki Iwama , Akinori Kita , Shunsuke Kurasawa , Isamu Konishiike , Takakazu Hirose
发明人： Kenichi Kawase , Koichi Matsumoto , Hideki Nakai , Masayuki Iwama , Akinori Kita , Shunsuke Kurasawa , Isamu Konishiike , Takakazu Hirose
IPC分类号： H01M6/16 , H01M4/48 , H01M4/52 , H01M4/04
CPC分类号： H01M10/0525 , H01M4/0402 , H01M4/0452 , H01M4/0471 , H01M4/134 , H01M4/1395 , H01M4/386 , H01M4/8657
摘要： A battery having a high charge and discharge efficiency is provided. An anode being provided with an anode active material layer on an anode current collector, in which the anode active material layer contains silicon as an anode active material and includes a compound film having Si—O bond and Si—N bond on at least part of the surface of the anode active material layer.
摘要翻译：提供具有高充放电效率的电池。阳极在阳极集电器上设置有阳极活性材料层，其中负极活性材料层含有硅作为负极活性材料，并且包括在至少一部分上具有Si-O键和Si-N键的化合物膜阳极活性物质层的表面。

50. 发明申请

US20070257336A1 MOSFET having a channel region with enhanced stress and method of forming same 有权
标题翻译： MOSFET具有增强应力的沟道区和形成其的方法
公开(公告)号：US20070257336A1
公开(公告)日：2007-11-08
申请号：US11429592
申请日：2006-05-05
申请人： Koichi Matsumoto
发明人： Koichi Matsumoto
IPC分类号： H01L29/04
CPC分类号： H01L21/823807 , H01L29/045 , H01L29/665 , H01L29/7843 , H01L29/7849
摘要： A semiconductor device is provided that includes a semiconductor substrate, an n-channel MOSFET formed on the substrate and a p-channel MOSFET formed on the substrate. A first layer is formed to cover the n-channel MOSFET, wherein the first layer has a first flexure-induced stress. A second layer is formed to cover the p-channel MOSFET, wherein the second layer has a second flexure-induced stress.
摘要翻译：提供一种半导体器件，其包括半导体衬底，形成在衬底上的n沟道MOSFET和形成在衬底上的p沟道MOSFET。形成第一层以覆盖n沟道MOSFET，其中第一层具有第一挠曲引起的应力。形成第二层以覆盖p沟道MOSFET，其中第二层具有第二挠曲引起的应力。

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