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41. 发明授权

US08537808B2 SIP telephone set, and file transfer system, file transfer method and file transfer program thereof 失效
标题翻译： SIP电话机，文件传输系统，文件传输方法和文件传输程序
公开(公告)号：US08537808B2
公开(公告)日：2013-09-17
申请号：US12871015
申请日：2010-08-30
申请人： Yoshitaka Hamada
发明人： Yoshitaka Hamada
IPC分类号： H04L12/66
CPC分类号： H04L12/66
摘要： Provided is service for transmitting and receiving a file between a calling device and a call receiving device without depending on a capacity of a proxy server.An SIP telephone set (calling device 11) which makes a call through a proxy server 13 to establish a session for a voice path with a call receiving device 12 conformed to SIP, comprising a request issuing unit 111 which requests the call receiving device 12 to establish a session for a data path by the pressing of a specific extension at the time of establishment of a session for a voice path, a session establishing unit 112 which obtains an access authentication result by the pressing of the specific extension to establish a session for a data path with the call receiving device 12, and a file obtaining unit 113 which obtains a file managed by the call receiving device 12 from the call receiving device 12 independently of the proxy server 13 after a session for a data path is established.
摘要翻译：提供了用于在主叫设备和呼叫接收设备之间发送和接收文件而不依赖于代理服务器的容量的服务。通过代理服务器13进行呼叫以建立符合SIP的呼叫接收设备12的语音路由会话的SIP电话机（呼叫设备11），包括请求发送单元111，其请求呼叫接收设备12 在建立用于语音路径的会话时通过按压特定分机来建立用于数据路径的会话;会话建立单元112，其通过按压特定分机来获得访问认证结果，以建立会话与呼叫接收装置12的数据路径，以及文件获取单元113，其在建立了数据路径的会话之后，独立于代理服务器13从呼叫接收装置12获取由呼叫接收装置12管理的文件。

42. 发明授权

US08257528B2 Substrate joining method and 3-D semiconductor device 有权
标题翻译：基板接合方法和3-D半导体器件
公开(公告)号：US08257528B2
公开(公告)日：2012-09-04
申请号：US12540764
申请日：2009-08-13
申请人： Fujio Yagihashi , Yoshitaka Hamada , Takeshi Asano
发明人： Fujio Yagihashi , Yoshitaka Hamada , Takeshi Asano
IPC分类号： B32B37/00 , B32B9/04 , C09J163/00 , C09J5/06 , C09J201/00 , H01L21/20 , H01L21/50 , H01L21/52
CPC分类号： H01L21/2007 , H01L2924/0002 , Y10T156/10 , H01L2924/00
摘要： A pair of substrates each having a bonding surface are joined together by interposing a bond layer precursor coating between the bonding surfaces of the substrates and heating the precursor coating to form a bond layer. Prior to the joining step, the substrate on the bonding surface is provided with a gas-permeable layer. Even when a material which will evolve a noticeable volume of gas upon heat curing is used as the precursor coating, substrates can be joined via a robust bond without the peeling problem by gas evolution.
摘要翻译：将具有接合面的一对基板通过在基板的接合面之间插入接合层前体涂层并加热前体涂层而形成接合层而接合在一起。在接合步骤之前，接合表面上的基底设置有透气层。即使当热固化时将产生显着体积的气体的材料用作前体涂层时，可以通过坚固的粘结将衬底接合，而不会由气体逸出造成剥离问题。

43. 发明申请

US20120207917A1 CONDUCTIVE PATTERN-FORMING COMPOSITION AND METHOD 审中-公开
标题翻译：导电形成组合物和方法
公开(公告)号：US20120207917A1
公开(公告)日：2012-08-16
申请号：US13372673
申请日：2012-02-14
申请人： Yoshitaka Hamada , Fujio Yagihashi
发明人： Yoshitaka Hamada , Fujio Yagihashi
IPC分类号： B05D5/12 , H01B1/22 , H01B1/20
CPC分类号： H01B1/22 , C09D7/69 , C09D11/322 , C09D11/52
摘要： A conductive pattern-forming composition is obtained by loading a silicone rubber composition comprising a curable organopolysiloxane and a curing agent with conductive submicron particles.
摘要翻译：通过将包含可固化的有机聚硅氧烷和固化剂的硅橡胶组合物与导电的亚微米颗粒相加来获得导电图案形成组合物。

44. 发明申请

US20090294726A1 ORGANIC SILICON OXIDE FINE PARTICLES AND PREPARATION METHOD THEREOF, POROUS FILM-FORMING COMPOSITION, POROUS FILM AND FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE 有权
标题翻译：有机硅氧化物微粒及其制备方法，多孔膜成膜组合物，多孔膜及其形成方法及半导体器件
公开(公告)号：US20090294726A1
公开(公告)日：2009-12-03
申请号：US12472681
申请日：2009-05-27
申请人： Yoshitaka Hamada , Fujio Yagihashi , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
发明人： Yoshitaka Hamada , Fujio Yagihashi , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
IPC分类号： B32B1/00 , B29C35/08 , B29C35/02 , C09K3/00
CPC分类号： H01B3/10 , Y10T428/25 , Y10T428/259 , Y10T428/2991 , Y10T428/2993 , Y10T428/2995 , Y10T428/31663
摘要： Provided are organic silicon oxide fine particles which can be formed into a porous film having a dielectric constant and mechanical strength expected as a high-performance porous insulating film and having excellent chemical stability, and a preparation method thereof. Described specifically, provided are an organic silicon oxide fine particle comprising a core containing at least an inorganic silicon oxide or an organic silicon oxide and a shell containing at least an organic silicon oxide and being formed around the core by using shell-forming hydrolyzable silane in the presence of a basic catalyst; wherein of silicon atoms constituting the core or the shell, a ratio (T/Q) of a number (T) of silicon atoms having at least one bond directly attached to a carbon atom to a number (Q) of silicon atoms having all of four bonds attached to an oxygen atom is greater in the shell than in the core; and wherein the shell-forming hydrolyzable silane comprise at least a hydrolyzable silane compound having two or more hydrolyzable-group-having silicon atoms bound to each other via a carbon chain or via a carbon chain containing one silicon atom between some carbon atoms.
摘要翻译：提供可以形成具有期望作为高性能多孔绝缘膜的介电常数和机械强度并且具有优异的化学稳定性的多孔膜的有机氧化硅微粒及其制备方法。具体地说，提供了一种有机氧化硅微粒，其包含至少含有无机氧化硅或有机氧化硅的芯和至少含有有机氧化硅的壳，并且通过使用壳形成可水解硅烷在芯周围形成存在碱性催化剂; 其中构成核或壳的硅原子中，具有至少一个直接连接到碳原子上的键的硅原子数（T）与（Q）的硅原子数（Q）的比（T / Q）附着在氧原子上的四个键在壳中比在核中大; 并且其中所述成壳可水解硅烷至少包含具有两个或多个可水解基团的硅原子的可水解硅烷化合物，其通过碳链彼此结合，或通过在一些碳原子之间含有一个硅原子的碳链。

45. 发明授权

US07485690B2 Sacrificial film-forming composition, patterning process, sacrificial film and removal method 有权
标题翻译：牺牲成膜组合物，图案化工艺，牺牲膜和去除方法
公开(公告)号：US07485690B2
公开(公告)日：2009-02-03
申请号：US11148380
申请日：2005-06-09
申请人： Yoshitaka Hamada , Tsutomu Ogihara , Motoaki Iwabuchi , Takeshi Asano , Takafumi Ueda , Dirk Pfeiffer
发明人： Yoshitaka Hamada , Tsutomu Ogihara , Motoaki Iwabuchi , Takeshi Asano , Takafumi Ueda , Dirk Pfeiffer
IPC分类号： C08G77/08
CPC分类号： G03F7/094 , G03F7/0752 , H01L21/31116 , H01L21/31144 , H01L21/76808
摘要： A sacrificial film-forming composition is provided comprising (A) a silicone resin which is a co-hydrolytic condensate of hydrolyzable silanes having formulae (1) and (2): X—Y—SiZ3 (1) RnSiZ4-n (2) wherein Z is a hydrolyzable group, X is a crosslinkable organofunctional group such as an unsubstituted hydroxyl group or a substituted or unsubstituted epoxy, acyloxy or acryloxy group, Y is a single bond or a divalent hydrocarbon group, R is hydrogen or a monovalent hydrocarbon group, and n is an integer of 0 to 3, the silicone resin being capable of crosslinking reaction by the crosslinkable organofunctional group in formula (1), (B) a crosslinking agent, (C) an acid generator, and (D) an organic solvent. The composition has improved storage stability, filling properties, adhesion and coating uniformity sufficient to form a sacrificial film which is effectively dissolvable in a stripping solution.
摘要翻译：提供牺牲性成膜组合物，其包含（A）作为具有式（1）和（2）的可水解硅烷的共水解缩合物的硅氧烷树脂：<？在线配方说明=“在线配方” end =“lead”？> XY-SiZ3（1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line formula end =“lead”？> RnSiZ4-n（2）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中Z是可水解基团，X是可交联的有机官能团，例如未取代的羟基或取代或未取代的环氧基，酰氧基或丙烯酰氧基，Y为单键或二价烃基，R为氢或一价烃基，n为0〜3的整数，有机硅树脂为能够通过式（1）中的交联性有机官能团交联反应，（B）交联剂，（C）酸产生剂和（D）有机溶剂进行交联反应。该组合物具有提高的储存稳定性，填充性能，粘附性和涂层均匀性，足以形成有效地溶解在剥离溶液中的牺牲膜。

46. 发明授权

US07417104B2 Porous film-forming composition, patterning process, and porous sacrificial film 有权
标题翻译：多孔成膜组合物，图案化工艺和多孔牺牲膜
公开(公告)号：US07417104B2
公开(公告)日：2008-08-26
申请号：US11148371
申请日：2005-06-09
申请人： Motoaki Iwabuchi , Yoshitaka Hamada , Tsutomu Ogihara , Takeshi Asano , Takafumi Ueda
发明人： Motoaki Iwabuchi , Yoshitaka Hamada , Tsutomu Ogihara , Takeshi Asano , Takafumi Ueda
IPC分类号： C08G77/08 , C08L83/04
CPC分类号： C08G77/04 , C08G77/08 , C08G77/14 , C09D183/04 , C09D183/06 , G03F7/0757 , H01L21/02123 , H01L21/02211 , H01L21/02282 , H01L21/0276 , H01L21/31144 , H01L21/3121 , H01L21/76808
摘要： A porous film-forming composition is provided comprising (A) a polymer obtained by hydrolytic condensation of a hydrolyzable silane having formula (1): R1n—Si—R24-n (1) wherein R1 is a monovalent organic group or hydrogen, R2 is a hydrolyzable group or a hydroxyl group and n is an integer of 0 to 3, a hydrolyzate thereof or a partial condensate thereof, with the proviso that at least one silicon compound having an organic crosslinkable group as R1 is included, the polymer being capable of crosslinking reaction by the organic crosslinkable group, and (B) an organic solvent. The composition has improved storage stability, filling properties, adhesion and coating uniformity sufficient to form a sacrificial film which is dissolvable in a stripping solution.
摘要翻译：提供了一种多孔成膜组合物，其包含（A）通过具有式（1）的可水解硅烷的水解缩合得到的聚合物：<？in-line-formula description =“In-line Formulas”end =“lead” （1）<β在线公式描述中的一个或多个（1）其中R 1是一价有机基团或氢，R 2是可水解基团或羟基，并且其中R 1是一价有机基团或氢原子， n为0〜3的整数，其水解物或其部分缩合物，条件是含有至少一种具有有机交联基团的硅化合物为R 1，所述聚合物能够通过有机交联基团进行交联反应，和（B）有机溶剂。该组合物具有提高的储存稳定性，填充性能，粘合性和涂层均匀性，足以形成可溶于剥离溶液中的牺牲膜。

47. 发明授权

US07357961B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device 有权
标题翻译：用于形成多孔膜的组合物，多孔膜及其形成方法，层间绝缘膜和半导体器件
公开(公告)号：US07357961B2
公开(公告)日：2008-04-15
申请号：US10819544
申请日：2004-04-07
申请人： Motoaki Iwabuchi , Fujio Yagihashi , Yoshitaka Hamada , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
发明人： Motoaki Iwabuchi , Fujio Yagihashi , Yoshitaka Hamada , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
IPC分类号： C08G77/06 , B05D3/02
CPC分类号： H01L21/3122 , C08G77/04 , C08G77/08 , C08G77/50 , C09D183/04 , C09D183/14 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , Y10T428/249953 , Y10T428/31663
摘要： Provided are a film formation composition which can produce a film having high strength and low dielectric constant, a method for manufacturing the same, a method for forming a porous film, a porous film, and a semiconductor device containing the porous film internally. More specifically provided is a film formation composition, comprising a polymer which is obtainable by hydrolysis and condensation of one or more hydrolysable silane compounds in the presence of anionic ion exchange resin, wherein the hydrolysable silane compound is selected from the group consisting of Formulae (1) and (2): (R1)aSi(R2)4-a (1) (R3)b(R5)3-bSi—R7—Si(R6)3-c(R4)c (2) wherein R1, R3 and R4 each independently represents a monovalent hydrocarbon group which may have a substituent; R2, R5 and R6 each independently represents a hydrolyzable group; R7 represents a divalent organic group; a represents an integer of 0 to 3; and b and c each represents an integer of 1 or 2.
摘要翻译：本发明提供一种成膜组合物，其可以制造具有高强度和低介电常数的膜，其制造方法，多孔膜形成方法，多孔膜和在内部含有多孔膜的半导体器件。更具体地提供了一种成膜组合物，其包含通过在阴离子离子交换树脂的存在下水解和缩合一种或多种可水解硅烷化合物而获得的聚合物，其中可水解硅烷化合物选自由式（1））和（2）：<？in-line-formula description =“In-line Formulas”end =“lead”？（R＆lt; 1＆gt;）＆lt; 4-a（1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula- 公式描述=“在线公式”end =“lead”？>（R 3）3（R 5）3 -b-Si-R 7 -Si（R 6）3-c（R 4））（2）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中R 1，R 3 R 4和R 4各自独立地表示可以具有取代基的一价烃基; R 2，R 5和R 6各自独立地表示可水解基团; R 7表示二价有机基团; a表示0〜3的整数， b和c各自表示1或2的整数。

48. 发明授权

US07332446B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device 有权
标题翻译：用于形成多孔膜的组合物，多孔膜及其形成方法，层间绝缘膜和半导体器件
公开(公告)号：US07332446B2
公开(公告)日：2008-02-19
申请号：US10808692
申请日：2004-03-25
申请人： Tsutomu Ogihara , Fujio Yagihashi , Yoshitaka Hamada , Takeshi Asano , Motoaki Iwabuchi , Hideo Nakagawa , Masaru Sasago
发明人： Tsutomu Ogihara , Fujio Yagihashi , Yoshitaka Hamada , Takeshi Asano , Motoaki Iwabuchi , Hideo Nakagawa , Masaru Sasago
IPC分类号： H01L21/469
CPC分类号： H01L21/02126 , C09D183/04 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695
摘要： According to the invention, the thin film having the thickness controlled desirably can be easily formed using common semiconductor processes. Provided is a coating liquid for forming the porous film having an excellent dielectric property and mechanical property. Specifically, the coating liquid for forming a porous film comprises the condensation product obtained by condensation of one or more silicate compounds represented by the formula (X2O) i(SiO2)j(H2O)k and one more organosilate compounds represented by the formula (X2O)a(RSiO1.5)b(H2O)c. Thus, the porous insulating film having sufficient mechanical strength and dielectric properties for use in the semiconductor manufacturing process can be manufactured.
摘要翻译：根据本发明，可以使用普通的半导体工艺容易地形成具有控制厚度的薄膜。提供一种用于形成具有优异的介电性能和机械性能的多孔膜的涂布液。具体地，用于形成多孔膜的涂布液包括通过一种或多种由式（X 2 O 2）O表示的硅酸盐化合物（SiO 2）的缩合获得的缩合产物，（H 2）2）另外，另外还有一种由式（ⅩⅪ）表示的有机硅酸盐化合物（H 2 O）C（H 2 O）C（H 2 O）。因此，可以制造用于半导体制造工艺中具有足够的机械强度和介电性能的多孔绝缘膜。

49. 发明申请

US20080038664A1 Silsesquioxane compound mixture, method of making, resist composition, and patterning process 审中-公开
标题翻译：倍半硅氧烷复合混合物，制备方法，抗蚀剂组合物和图案化工艺
公开(公告)号：US20080038664A1
公开(公告)日：2008-02-14
申请号：US11882664
申请日：2007-08-03
申请人： Yoshitaka Hamada , Mutsuo Nakashima
发明人： Yoshitaka Hamada , Mutsuo Nakashima
IPC分类号： G03F7/075 , C08F2/01 , C08G77/04 , C08G77/24 , G03C1/04
CPC分类号： G03F7/0757 , C08G77/045 , G03F7/0045 , H01L21/3122
摘要： A silsesquioxane compound mixture having a high proportion of silsesquioxane compounds bearing bulky substituent groups on side chain and having a degree of condensation of substantially 100% is prepared by a first stage wherein a silane feed comprising a trifunctional silane bearing a bulky substituent group on side chain represented by formula (1): wherein Y is an aliphatic or aromatic organic group optionally having a functional group, X1, X2 and X3 are H, halogen, alkoxy or aryloxy is hydrolyzed in the presence of an acid or base catalyst, and a second stage wherein dehydrating condensation is carried out in the presence of a strong base catalyst while removing the water resulting from condensation out of the reaction system.
摘要翻译：通过第一阶段制备具有高比例的在侧链上具有大体积取代基且具有基本上100％的缩合度的倍半硅氧烷化合物的倍半硅氧烷化合物混合物，其中包含在侧链上具有大体积取代基的三官能硅烷的硅烷进料由式（1）表示：其中Y是任选具有官能团的脂族或芳族有机基团，X 1，X 2和X 3 O 在酸或碱催化剂的存在下，H，卤素，烷氧基或芳氧基被水解，第二步是在强碱催化剂的存在下进行脱水缩合，同时除去由反应物凝结出来的水系统。

50. 发明申请

US20070190457A1 Resist composition and patterning process using the same 有权
标题翻译：抗蚀剂组成和图案化工艺使用相同
公开(公告)号：US20070190457A1
公开(公告)日：2007-08-16
申请号：US11702658
申请日：2007-02-06
申请人： Mutsuo Nakashima , Yoshitaka Hamada , Katsuya Takemura , Kazumi Noda
发明人： Mutsuo Nakashima , Yoshitaka Hamada , Katsuya Takemura , Kazumi Noda
IPC分类号： G03C1/00
CPC分类号： G03F7/0757 , G03F7/0045 , Y10S430/114
摘要： A resist composition is provided comprising a silicone resin, a photoacid generator, a nitrogen-containing organic compound, and a solvent. The silicone resin is obtained through cohydrolytic condensation of a mixture of three silane monomers containing a fluorinated norbornane group, an organic group having a carboxyl group protected with an acid labile group, and a lactone ring-bearing organic group, respectively. The resist composition has satisfactory resolution and overcomes the problem of a low selective etching ratio between resist film and organic film during oxygen reactive etching.
摘要翻译：提供了包含有机硅树脂，光酸产生剂，含氮有机化合物和溶剂的抗蚀剂组合物。有机硅树脂通过含有氟化降冰片烷基的三种硅烷单体和具有酸不稳定基团保护的羧基的有机基团和含有内酯环的有机基团的混合物的共水解缩合而获得。抗蚀剂组合物具有令人满意的分辨率，并且克服了在氧反应蚀刻期间抗蚀剂膜和有机膜之间的选择性蚀刻比低的问题。

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