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41. 发明申请

US20120018743A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20120018743A1
公开(公告)日：2012-01-26
申请号：US13190001
申请日：2011-07-25
申请人： Toru Hiyoshi , Keiji Wada , Takeyoshi Masuda , Hiromu Shiomi
发明人： Toru Hiyoshi , Keiji Wada , Takeyoshi Masuda , Hiromu Shiomi
IPC分类号： H01L29/772
CPC分类号： H01L29/7802 , H01L21/049 , H01L29/045 , H01L29/1095 , H01L29/1608 , H01L29/66068 , H01L29/7395
摘要： A MOSFET includes a silicon carbide substrate including a main surface having an off angle of not less than 50° and not more than 65° with respect to a {0001} plane, a buffer layer and a drift layer formed on the main surface, a gate oxide film formed on and in contact with the drift layer, and a p type body region of a p conductivity type formed in the drift layer to include a region in contact with the gate oxide film. The p type body region has a p type impurity density of not less than 5×1016 cm−3.
摘要翻译： MOSFET包括碳化硅衬底，其包括相对于{0001}面具有不小于50°且不大于65°的偏离角的主表面，形成在主表面上的缓冲层和漂移层，形成在漂移层上并与漂移层接触的栅氧化膜，以及在漂移层中形成的ap导电型的p型体区域，以包括与栅氧化膜接触的区域。 p型体区的p型杂质密度为5×1016cm-3以上。

42. 发明授权

US06734461B1 SiC wafer, SiC semiconductor device, and production method of SiC wafer 有权
标题翻译： SiC晶片，SiC半导体器件和SiC晶片的制造方法
公开(公告)号：US06734461B1
公开(公告)日：2004-05-11
申请号：US10070472
申请日：2002-03-07
申请人： Hiromu Shiomi , Tsunenobu Kimoto , Hiroyuki Matsunami
发明人： Hiromu Shiomi , Tsunenobu Kimoto , Hiroyuki Matsunami
IPC分类号： H01L310312
CPC分类号： H01L29/1608 , C30B23/00 , C30B23/02 , C30B29/36 , H01L21/02378 , H01L21/02447 , H01L21/02516 , H01L21/02529 , H01L21/02579 , H01L21/02587 , H01L21/0262 , H01L21/02658 , H01L29/045 , H01L29/78
摘要： A SiC wafer comprises a 4H polytype SiC substrate 2 in which the crystal plane orientation is substantially {03-38}, and a buffer layer 4 composed of SiC formed over this SiC substrate 2. The {03-38} plane forms an angle of approximately 35° with respect to the axial direction in which micropipes and so forth extend, so micropipes and so forth are eliminated at the crystal sides, and do not go through to an active layer 6 on the buffer layer 4. Lattice mismatching between the SiC substrate 2 and the active layer 6 is suppressed by the buffer layer 4. Furthermore, anisotropy in the electron mobility is low because a 4H polytype is used. Therefore, it is possible to obtain a SiC wafer and a SiC semiconductor device with which there is little anisotropy in the electron mobility, and strain caused by lattice mismatching can be lessened, as well as a method for manufacturing these.
摘要翻译： SiC晶片包括其中晶体取向基本上为{03-38}的4H多型SiC衬底2，以及由该SiC衬底2上形成的由SiC构成的缓冲层4. {03-38}面形成相对于其中微孔等的<0001>轴向延伸大约35°，因此在晶体侧消除了微管等，并且不会穿过缓冲层4上的有源层6。晶格不匹配在SiC衬底2和有源层6之间被缓冲层4抑制。此外，由于使用4H多型，电子迁移率的各向异性低。因此，可以获得在电子迁移率中几何异向性小的SiC晶片和SiC半导体器件，并且可以减小由晶格失配引起的应变以及其制造方法。

43. 发明授权

US06267637B1 Electron-emitting element, method of making the same, and electronic device 失效
标题翻译：电子发射元件及其制造方法和电子器件
公开(公告)号：US06267637B1
公开(公告)日：2001-07-31
申请号：US09437092
申请日：1999-11-09
申请人： Hirohisa Saito , Takashi Tsuno , Hiromu Shiomi , Yoshiaki Kumazawa , Takahiro Imai
发明人： Hirohisa Saito , Takashi Tsuno , Hiromu Shiomi , Yoshiaki Kumazawa , Takahiro Imai
IPC分类号： H01J924
CPC分类号： H01J1/3042 , H01J2201/30457
摘要： An electron-emitting element comprises a diamond substrate, and a diamond protrusion grown on a surface of the diamond substrate so as to have a pointed portion in a form capable of emitting an electron. Since the diamond protrusion formed by growth has a sharply pointed tip portion, it can fully emit electrons. Preferably, the surface of the diamond substrate is a {100} face, and the diamond protrusion is surrounded by {111} faces.
摘要翻译：电子发射元件包括金刚石衬底和在金刚石衬底的表面上生长的金刚石突起，以便具有能够发射电子的形式的尖端部分。由于通过生长形成的金刚石突起具有尖锐的尖端部分，所以它可以完全发射电子。优选地，金刚石基底的表面是{100}面，并且金刚石突起被{111}面包围。

44. 发明授权

US06193797B1 Method of making SiC single crystal and apparatus for making SiC single crystal 有权
标题翻译：制造SiC单晶的方法和制造SiC单晶的装置
公开(公告)号：US06193797B1
公开(公告)日：2001-02-27
申请号：US09231628
申请日：1999-01-15
申请人： Hiromu Shiomi , Shigehiro Nishino
发明人： Hiromu Shiomi , Shigehiro Nishino
IPC分类号： C30B2300
CPC分类号： C30B23/00 , C30B23/002 , C30B29/36 , Y10S117/906 , Y10T117/10
摘要： An apparatus comprises an Si-disposing section in which solid Si is disposed; a seed-crystal-disposing section in which a seed crystal of SiC is disposed; a synthesis vessel adapted to accommodate the Si-disposing section, the seed-crystal-disposing section, and carbon; heating means adapted to heat the Si-disposing section and the seed-crystal-disposing section; and a control section for transmitting to the heating means a command for heating the Si to an evaporation temperature of Si or higher and heating the seed crystal to a temperature higher than that of Si; wherein the Si evaporated by the heating means is adapted to reach the seed-crystal-disposing section.
摘要翻译：一种装置包括其中设置有固体Si的硅设置部分; 配置SiC的晶种的籽晶配置部，合适容器，其适于容纳所述Si配置部，所述晶种配置部和碳; 加热装置，其适于加热所述Si配置部和所述晶种配置部; 以及控制部，向所述加热装置发送用于将所述Si加热至Si或更高的蒸发温度并将所述晶种加热至高于Si的温度的指令; 其中通过加热装置蒸发的Si适于到达晶种设置部分。

45. 发明授权

US5943555A Micro mechanical component and production process thereof 失效
标题翻译：微机械部件及其生产工艺
公开(公告)号：US5943555A
公开(公告)日：1999-08-24
申请号：US954307
申请日：1997-10-17
申请人： Hiromu Shiomi , Yoshiki Nishibayashi , Shin-ichi Shikata
发明人： Hiromu Shiomi , Yoshiki Nishibayashi , Shin-ichi Shikata
IPC分类号： B81B3/00 , B81C1/00 , G01C19/56 , G01H3/08 , G01H11/00 , G01H11/06 , G01L9/00 , G01P15/08 , G01P15/125 , G01Q70/14 , G01Q80/00 , H01L21/00
CPC分类号： G01P15/0802 , B81B3/007 , B81C1/0015 , B81C1/00682 , G01H11/00 , G01H11/06 , G01H3/08 , G01P15/125 , B81B2201/0235 , B81B2201/0264 , B81B2201/034 , B81B2201/035 , B81B2201/054 , B81B2203/0118 , B81B2203/04 , B81C2201/0109 , G01P2015/0828
摘要： A micro mechanical component of the present invention comprises a base, and at least one drive portion supported on the base and relatively driving to the base, in which the drive portion is formed from a diamond layer. Thus, because the drive portion has excellent mechanical strength and modulus of elasticity, the operational performance can be greatly improved as a micro mechanical component processed in a fine shape, from the conventional level. Further, because the drive portion exhibits excellent device characteristics under severe circumstances, the range of applications as a micro mechanical component can be widely expanded from the conventional range.
摘要翻译：本发明的微型机械部件包括基座和至少一个支撑在基座上并相对驱动到基座的驱动部分，驱动部分由金刚石层形成。因此，由于驱动部具有优异的机械强度和弹性模量，因此从以往的水平来看，作为微细的机械零件加工成微细的机械部件，可以大大提高其操作性能。此外，由于驱动部在恶劣的环境下表现出优异的器件特性，所以作为微机械部件的应用范围可以从传统的范围得到广泛的扩展。

46. 发明授权

US5812573A Semiconductor lasers comprising rare earth metal-doped diamond 失效
标题翻译：包含稀土金属掺杂金刚石的半导体激光器
公开(公告)号：US5812573A
公开(公告)日：1998-09-22
申请号：US616552
申请日：1996-03-15
申请人： Hiromu Shiomi , Yoshiki Nishibayashi , Shin-ichi Shikata
发明人： Hiromu Shiomi , Yoshiki Nishibayashi , Shin-ichi Shikata
IPC分类号： H01S3/094 , H01S3/06 , H01S3/16 , H01S3/19
CPC分类号： H01S3/16 , H01S3/1603 , H01S3/1628 , H01S3/163
摘要： In general, the semiconductor laser device of the present invention comprises an emitting element comprising a doped diamond, which is doped with atoms of at least one rare earth metal and/or molecules of at least one compound containing a rare earth metal. The semiconductor laser device assembly according to the present invention comprises an emitting element of a doped diamond, which is a diamond doped with atoms of at least one rare earth metal and/or molecules of at least one compound containing a rare earth metal, and a thermal releasing element of a substantially undoped diamond, on which the semiconductor laser device are placed.
摘要翻译：通常，本发明的半导体激光器件包括掺杂有金刚石的发光元件，该金刚石掺杂有至少一种稀土金属的原子和/或至少一种含有稀土金属的化合物的分子。根据本发明的半导体激光器件组件包括掺杂金刚石的发光元件，掺杂金刚石是掺杂有至少一种稀土金属的原子的金刚石和/或至少一种含有稀土金属的化合物的分子，以及放置半导体激光装置的基本上未掺杂的金刚石的热释放元件。

47. 发明授权

US5242663A Method of and apparatus for synthesizing hard material 失效
标题翻译：用于合成硬质材料的方法和装置
公开(公告)号：US5242663A
公开(公告)日：1993-09-07
申请号：US584912
申请日：1990-09-18
申请人： Hiromu Shiomi , Naoji Fujimori , Nobuhiro Ota , Takahiro Imai
发明人： Hiromu Shiomi , Naoji Fujimori , Nobuhiro Ota , Takahiro Imai
IPC分类号： C23C16/27 , C23C16/34 , C23C16/511
CPC分类号： C23C16/274 , C23C16/277 , C23C16/342 , C23C16/511
摘要： A method of and an apparatus for vapor-phase synthesizing a hard material use a raw material gas supplied into a reaction tube (6) while irradiating a region of the reaction tube (6) with microwaves (18) of a prescribed frequency for causing a synthesizing reaction to produce the hard material along a prescribed direction, by a plasma generation. In the reaction tube (6), at least two plate electrodes (17a, 17b, 19a, 19b) are oppositely arranged in parallel vertically to electric fields of the microwaves (18), so that the plasma is excited between the plate electrodes (17a, 17b, 19a, 19b) for vapor-phase synthesizing the hard material. The microwaves (18) of high electric power are introduced into the reaction tube (6) through a waveguide (5) without loss, so that strong electric fields can be homogeneously and stably distributed between the opposite plate electrodes.

48. 发明授权

US08642436B2 Method of manufacturing silicon carbide semiconductor device 有权
标题翻译：制造碳化硅半导体器件的方法
公开(公告)号：US08642436B2
公开(公告)日：2014-02-04
申请号：US13330413
申请日：2011-12-19
申请人： Naoki Ooi , Hiromu Shiomi
发明人： Naoki Ooi , Hiromu Shiomi
IPC分类号： H01L21/336
CPC分类号： H01L29/1608 , H01L21/0465 , H01L21/047 , H01L29/66068 , H01L29/7802
摘要： A first impurity region is formed by ion implantation through a first opening formed in a mask layer. By depositing a spacer layer on an etching stop layer on which the mask layer has been provided, a mask portion having the mask layer and the spacer layer is formed. By anisotropically etching the spacer layer, a second opening surrounded by a second sidewall is formed in the mask portion. A second impurity region is formed by ion implantation through the second opening. An angle of the second sidewall with respect to a surface is 90°±10° across a height as great as a second depth. Thus, accuracy in extension of an impurity region can be enhanced.
摘要翻译：通过在掩模层中形成的第一开口的离子注入形成第一杂质区。通过在其上设置有掩模层的蚀刻停止层上沉积间隔层，形成具有掩模层和间隔层的掩模部分。通过各向异性蚀刻间隔层，在掩模部分中形成由第二侧壁包围的第二开口。通过第二开口的离子注入形成第二杂质区。第二侧壁相对于表面的角度在与第二深度一样大的高度上为90°±10°。因此，可以提高杂质区域的扩展精度。

49. 发明授权

US08609521B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08609521B2
公开(公告)日：2013-12-17
申请号：US13583564
申请日：2011-11-07
申请人： Ryosuke Kubota , Keiji Wada , Takeyoshi Masuda , Hiromu Shiomi
发明人： Ryosuke Kubota , Keiji Wada , Takeyoshi Masuda , Hiromu Shiomi
IPC分类号： H01L21/265
CPC分类号： H01L29/7802 , H01L21/046 , H01L21/268 , H01L29/1608 , H01L29/66068
摘要： A silicon carbide substrate having a surface is prepared. An impurity region is formed by implanting ions from the surface into the silicon carbide substrate. Annealing for activating the impurity region is performed. The annealing includes the step of applying first laser light having a first wavelength to the surface of the silicon carbide substrate, and the step of applying second laser light having a second wavelength to the surface of the silicon carbide substrate. The silicon carbide substrate has first and second extinction coefficients at the first and second wavelengths, respectively. A ratio of the first extinction coefficient to the first wavelength is higher than 5×105/m. A ratio of the second extinction coefficient to the second wavelength is lower than 5×105/m. Consequently, damage to the surface of the silicon carbide substrate during laser annealing can be reduced.
摘要翻译：制备具有表面的碳化硅衬底。通过从表面注入离子到碳化硅衬底中形成杂质区。执行用于激活杂质区域的退火。退火包括将具有第一波长的第一激光施加到碳化硅衬底的表面的步骤，以及将具有第二波长的第二激光施加到碳化硅衬底的表面的步骤。碳化硅衬底分别在第一和第二波长处具有第一和第二消光系数。第一消光系数与第一波长的比率高于5×10 5 / m。第二消光系数与第二波长的比率低于5×10 5 / m。因此，可以减少在激光退火期间对碳化硅衬底的表面的损坏。

50. 发明申请

US20120184092A1 METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE 有权
标题翻译：制造碳化硅半导体器件的方法
公开(公告)号：US20120184092A1
公开(公告)日：2012-07-19
申请号：US13352104
申请日：2012-01-17
申请人： Naoki OOI , Hiromu Shiomi
发明人： Naoki OOI , Hiromu Shiomi
IPC分类号： H01L21/266
CPC分类号： H01L21/0465 , H01L21/31116 , H01L29/1608 , H01L29/66068
摘要： A method for manufacturing a silicon carbide semiconductor device includes the step of forming a mask pattern of a silicon oxide film by removing a portion of the silicon oxide film by means of etching employing a gas containing oxygen gas and at least one fluorine compound gas selected from a group consisting of CF4, C2F6, C3F8, and SF6.
摘要翻译：一种制造碳化硅半导体器件的方法包括以下步骤：通过使用含氧气体的蚀刻和至少一种选自以下的氟化合物气体的蚀刻来除去氧化硅膜的一部分来形成氧化硅膜的掩模图案：由CF4，C2F6，C3F8和SF6组成的组。

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