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41. 发明授权

US06995634B2 Surface-acoustic-wave component adapted to electronic circuit and device, and manufacturing method therefor 失效
标题翻译：适用于电子电路和器件的表面声波元件及其制造方法
公开(公告)号：US06995634B2
公开(公告)日：2006-02-07
申请号：US10753237
申请日：2004-01-07
申请人： Setsuya Iwashita , Takamitsu Higuchi , Hiromu Miyazawa
发明人： Setsuya Iwashita , Takamitsu Higuchi , Hiromu Miyazawa
IPC分类号： H03H9/64 , H03B5/36
CPC分类号： H03H9/0542 , H03H9/02574 , H03H9/02984
摘要： A surface-acoustic-wave component that comprises a first piezoelectric layer composed of zinc oxide (ZnO), a second piezoelectric layer composed of lithium niobate (LiNbO3), and a protective layer, which are sequentially formed on a silicon substrate, on which electrodes (e.g., interdigital transducers) are further formed. Alternatively, it comprises a conductive layer composed of zinc oxide (ZnO), a piezoelectric layer composed of lithium niobate (LiNbO3), and a protective layer, which are sequentially formed on a silicon substrate, on which electrodes are further formed. The piezoelectric layer can actualize preferable orientation so as to improve the electromechanical coupling coefficient (K2). Thus, it is possible to produce surface-acoustic-wave components that contribute to manufacturing of highly-integrated electronic circuits such as frequency filters and oscillators as well as electronic devices such as portable telephones.
摘要翻译：一种表面声波分量，包括由氧化锌（ZnO）构成的第一压电层，由铌酸锂（LiNbO 3 N）组成的第二压电层和保护层，所述表面声波分量依次形成在硅衬底上，在其上进一步形成电极（例如，叉指式换能器）。或者，其包括由氧化锌（ZnO）构成的导电层，由铌酸锂（LiNbO 3 N）构成的压电层和保护层，其依次形成在硅基板上，进一步形成电极。压电层可以实现优选的取向，从而提高机电耦合系数（K 2 O 2）。因此，可以产生有助于制造诸如频率滤波器和振荡器的高度集成的电子电路以及诸如便携式电话的电子设备的表面声波分量。

42. 发明申请

US20050253903A1 Piezoelectric element, piezoelectric actuator, ink jet recording head, ink jet printer, surface acoustic wave element, frequency filter, oscillator, electronic circuit, thin film piezoelectric resonator and electronic apparatus 有权
标题翻译：压电元件，压电致动器，喷墨记录头，喷墨打印机，表面声波元件，频率滤波器，振荡器，电子电路，薄膜压电谐振器和电子设备
公开(公告)号：US20050253903A1
公开(公告)日：2005-11-17
申请号：US11130342
申请日：2005-05-16
申请人： Hiromu Miyazawa , Motohisa Noguchi , Takeshi Kijima
发明人： Hiromu Miyazawa , Motohisa Noguchi , Takeshi Kijima
IPC分类号： B41J2/045 , B41J2/055 , B41J2/135 , B41J2/14 , B41J2/145 , B41J2/16 , C04B35/49 , C04B35/491 , H01L41/08 , H01L41/09 , H01L41/18 , H01L41/187 , H01L41/22 , H01L41/319 , H01L41/39 , H02N2/00 , H03B5/30 , H03H3/02 , H03H3/08 , H03H9/02 , H03H9/05 , H03H9/17
CPC分类号： H01L41/1875 , B41J2/14233 , H01L41/0815 , H01L41/1876 , H01L41/318 , H03H3/02 , H03H3/08 , H03H9/02031 , H03H9/02574 , H03H9/0542 , H03H9/173 , H03H9/174 , H03H2003/021 , H03H2003/023
摘要： A piezoelectric element includes a base substrate, a buffer layer formed above the base substrate, and a piezoelectric film formed above the buffer layer, wherein the buffer layer is formed of Pb ((Zr1-xTix)1-yNby)O3 of a perovskite type, where x is in a range of 0≦x≦1, and y is in a range of 0.05≦y≦0.3, and the piezoelectric film is formed of a relaxor material of a perovskite type.
摘要翻译：压电元件包括基底基板，形成在基底基板上的缓冲层，以及形成在缓冲层之上的压电膜，其中缓冲层由Pb（（Zr 1-x Ti）其中x在0的范围内的钙钛矿型，其中x在0的范围内 <= x <= 1，y在0.05 <= y <0.3的范围内，并且压电膜由钙钛矿型的弛豫材料形成。

43. 发明申请

US20050128681A1 Capacitor and its manufacturing method, and semiconductor device 失效
标题翻译：电容器及其制造方法以及半导体器件
公开(公告)号：US20050128681A1
公开(公告)日：2005-06-16
申请号：US11004591
申请日：2004-12-03
申请人： Setsuya Iwashita , Motohisa Noguchi , Hiromu Miyazawa , Takamitsu Higuchi
发明人： Setsuya Iwashita , Motohisa Noguchi , Hiromu Miyazawa , Takamitsu Higuchi
IPC分类号： H01L27/04 , H01G4/06 , H01L21/02 , H01L21/822
CPC分类号： H01L28/55
摘要： A capacitor is provided having a structure in which an insulation film is interposed between a first electrode and a second electrode. The insulation film includes SrTiO3 as a main component, and at least one of Si and Ge added thereto.
摘要翻译：提供一种电容器，其具有绝缘膜插入在第一电极和第二电极之间的结构。绝缘膜包括SrTiO 3 3主要成分，并添加至少一种Si和Ge。

44. 发明申请

US20050096230A1 Electronic device and electronic apparatus 审中-公开
标题翻译：电子设备和电子设备
公开(公告)号：US20050096230A1
公开(公告)日：2005-05-05
申请号：US11008761
申请日：2004-12-08
申请人： Setsuya Iwashita , Takamitsu Higuchi , Hiromu Miyazawa
发明人： Setsuya Iwashita , Takamitsu Higuchi , Hiromu Miyazawa
IPC分类号： H01L41/08 , H01L21/02 , H01L21/316 , H01L21/8246 , H01L27/105 , H01L41/09 , H01L41/18 , H01L41/187 , H03H9/02 , H03H9/17 , H03H9/25 , H01G2/00
CPC分类号： H01L21/02197 , H01L21/02164 , H01L21/02172 , H01L21/02189 , H01L21/02192 , H01L21/31691 , H01L28/56 , H03H9/02574 , H03H9/174 , Y10S257/918
摘要： Performance of an electronic device is highly improved by epitaxially growing a perovskite-type oxide thin film on an inorganic amorphous layer or an organic solid layer in a desired direction; and furthermore, a high performance electronic device is provided by incorporating the electronic device into an integrated circuit, wherein oxide thin layers are formed on the inorganic amorphous layer or the organic solid layer, and the perovskite-type oxide thin film is grown epitaxially on the oxide layer, the oxide thin layers being able to be at least one of strontium oxide, magnesium oxide, cerium oxide, zirconium oxide, yttrium stabilized zirconium oxide, and strontium titanate; and as the perovskite-type oxide thin film, the perovskite-type oxide thin film being a piezoelectric or ferroelectric material, for example, is used.
摘要翻译：通过在无机非晶层或有机固体层上沿期望的方向外延生长钙钛矿型氧化物薄膜，高度改善电子器件的性能; 此外，通过将电子器件结合到集成电路中提供高性能电子器件，其中在无机非晶层或有机固体层上形成氧化物薄层，并且钙钛矿型氧化物薄膜外延生长在氧化物薄层可以是氧化锶，氧化镁，氧化铈，氧化锆，钇稳定的氧化锆和钛酸锶中的至少一种; 作为钙钛矿型氧化物薄膜，例如使用作为压电体或铁电体材料的钙钛矿型氧化物薄膜。

45. 发明授权

US06849861B2 Electronic device and electronic apparatus 失效
公开(公告)号：US06849861B2
公开(公告)日：2005-02-01
申请号：US10108180
申请日：2002-03-27
申请人： Setsuya Iwashita , Takamitsu Higuchi , Hiromu Miyazawa
发明人： Setsuya Iwashita , Takamitsu Higuchi , Hiromu Miyazawa
IPC分类号： H01L41/08 , H01L21/02 , H01L21/316 , H01L21/8246 , H01L27/105 , H01L41/09 , H01L41/18 , H01L41/187 , H03H9/02 , H03H9/17 , H03H9/25 , H01L29/06
CPC分类号： H01L21/02197 , H01L21/02164 , H01L21/02172 , H01L21/02189 , H01L21/02192 , H01L21/31691 , H01L28/56 , H03H9/02574 , H03H9/174 , Y10S257/918
摘要： Performance of an electronic device is highly improved by epitaxially growing a perovskite-type oxide thin film on an inorganic amorphous layer or an organic solid layer in a desired direction; and furthermore, a high performance electronic device is provided by incorporating the electronic device into an integrated circuit, wherein oxide thin layers are formed on the inorganic amorphous layer or the organic solid layer, and the perovskite-type oxide thin film is grown epitaxially on the oxide layer, the oxide thin layers being able to be at least one of strontium oxide, magnesium oxide, cerium oxide, zirconium oxide, yttrium stabilized zirconium oxide, and strontium titanate; and as the perovskite-type oxide thin film, the perovskite-type oxide thin film being a piezoelectric or ferroelectric material, for example, is used.

46. 发明授权

US06737690B2 Ferroelectronic memory and electronic apparatus 失效
标题翻译：铁电记忆体和电子仪器
公开(公告)号：US06737690B2
公开(公告)日：2004-05-18
申请号：US10105042
申请日：2002-03-22
申请人： Takamitsu Higuchi , Setsuya Iwashita , Hiromu Miyazawa , Kazumasa Hasegawa , Eiji Natori
发明人： Takamitsu Higuchi , Setsuya Iwashita , Hiromu Miyazawa , Kazumasa Hasegawa , Eiji Natori
IPC分类号： H01C31119
CPC分类号： H01L27/11502 , H01L21/02197 , H01L21/31604 , H01L27/105 , H01L27/11507 , H01L27/11509 , H01L28/55 , H01L28/60 , Y10S257/906
摘要： The present invention relates to a ferroelectric memory having a matrix-type memory cell array which has an excellent degree of integration, in which the angularity of the ferroelectric layer's hysteresis curve is improved. A ferroelectric memory having both integration and memory characteristics in which the angularity of the ferroelectric layer's hysteresis curve is improved is realized as follows. Namely, a structure is employed in which the memory cell array and the peripheral circuit are in a plane separated from one another, and the ferroelectric layer is made to undergo epitaxial growth on to a Si single crystal via a buffer and the first signal electrodes.
摘要翻译：本发明涉及具有优异的集成度的矩阵型存储单元阵列的铁电存储器，其中提高了铁电层磁滞曲线的角度。如下实现具有集成和存储特性的强电介质存储器，其中铁电层的磁滞曲线的角度得到改善。也就是说，采用其中存储单元阵列和外围电路处于彼此分离的平面中的结构，并且使铁电层经由缓冲器和第一信号电极经历外延生长到Si单晶。

47. 发明授权

US06734621B2 Light emitting device having magnetized cathode and anode 失效
标题翻译：具有磁化阴极和阳极的发光器件
公开(公告)号：US06734621B2
公开(公告)日：2004-05-11
申请号：US10235668
申请日：2002-09-06
申请人： Tomoko Koyama , Hiromu Miyazawa
发明人： Tomoko Koyama , Hiromu Miyazawa
IPC分类号： H05B3300
CPC分类号： H01L51/52 , H01L33/40 , H01L51/5206 , H01L51/5221
摘要： A light emitting device in accordance with the present invention has a substrate and a light-emitting element section formed on the substrate. The light-emitting element section includes a light-emitting layer, which is capable of generating light by electroluminescence, and an anode and cathode for applying an electrical field to that light-emitting layer. The anode and cathode includes a layer formed of a ferromagnetic material and are also magnetized.
摘要翻译：根据本发明的发光器件具有形成在基板上的基板和发光元件部。发光元件部分包括能够通过电致发光产生光的发光层和用于向该发光层施加电场的阳极和阴极。阳极和阴极包括由铁磁材料形成的层并且也被磁化。

48. 发明授权

US06720846B2 Surface acoustic wave device with KNb03 piezoelectric thin film, frequency filter, oscillator, electronic circuit, and electronic apparatus 失效
标题翻译：具有KNb03压电薄膜，频率滤波器，振荡器，电子电路和电子设备的表面声波器件
公开(公告)号：US06720846B2
公开(公告)日：2004-04-13
申请号：US10102181
申请日：2002-03-20
申请人： Setsuya Iwashita , Takamitsu Higuchi , Hiromu Miyazawa
发明人： Setsuya Iwashita , Takamitsu Higuchi , Hiromu Miyazawa
IPC分类号： H03H964
CPC分类号： H03H9/02984 , H03H9/02574 , H03H9/0542
摘要： Surface acoustic wave device having a high k2, and a frequency filter, oscillator, electronic circuit and electronic device employing this surface acoustic wave device is provided, wherein a first oxide thin film layer comprising SrO or MgO and a second oxide thin film layer comprising SrTiO3 are sequentially formed on top of a (110) Si substrate, or a first oxide thin film layer comprising CeO2, ZrO2 or yttrium-stabilized zirconia and a second oxide thin film layer comprising SrTiO3 are sequentially formed on top of a (100) Si substrate, a KNbO3 piezoelectric thin film being then formed on top of either of these second oxide thin film layers, and then, a protective film comprising oxide or nitride is formed on top of the KNbO3 piezoelectric thin film, finally, at least one electrode is formed on top of this protective film, to form a surface acoustic wave device, which surface acoustic wave device is employed to form a frequency filter, oscillator, electronic circuit, or electronic device.
摘要翻译：提供具有高k <2的表面声波器件，以及使用该声表面波器件的频率滤波器，振荡器，电子电路和电子器件，其中包括SrO或MgO的第一氧化物薄膜层和第二氧化物薄膜在（110）Si衬底的顶部依次形成包含SrTiO 3的层，或者包括CeO 2，ZrO 2或钇稳定的氧化锆的第一氧化物薄膜层和包含SrTiO 3的第二氧化物薄膜层依次形成在（100））Si衬底，然后在这些第二氧化物薄膜层之一上形成KNbO3压电薄膜，然后在KNbO3压电薄膜的顶部形成包含氧化物或氮化物的保护膜，最后至少一个电极形成在该保护膜的顶部上，形成表面声波装置，该声表面波装置用于形成频率滤波器，振荡器，电子电路或电子设备。

49. 发明授权

US06510074B2 Ferroelectric memory having a BaTiO3 recording layer oriented in a <111> direction 有权
标题翻译：具有沿<111>方向取向的BaTiO 3记录层的铁电存储器
公开(公告)号：US06510074B2
公开(公告)日：2003-01-21
申请号：US10103681
申请日：2002-03-21
申请人： Hiromu Miyazawa , Takamitsu Higuchi , Setsuya Iwashita
发明人： Hiromu Miyazawa , Takamitsu Higuchi , Setsuya Iwashita
IPC分类号： G11C1122
CPC分类号： H01L27/105 , H01L27/11502
摘要： A ferroelectric memory element and an electronic apparatus provided with this ferroelectric memory element are provided with a thin film recording layer of less than 50 nm film thickness having a high polarization moment and a high Curie temperature, wherein a recording layer of BaTiO3 is fabricated so as to be oriented in a pseudo-cubic system direction in a trigonal crystal structure, and in order to increase the polarization moment and Curie temperature, the unit cell in BaTiO3 film is elongated more than 2% in the pseudo-cubic system direction compared with the unit cell in a bulk material of BaTiO3, wherein in order to produce lattice strain in the crystal structure of the recording layer, the recording layer is grown epitaxially on the electrode layer that serves as the base layer, the ferroelectric memory element being provided with the recording layer, and the electronic apparatus being provided with the ferroelectric memory element.
摘要翻译：具有这种铁电存储元件的铁电存储元件和电子设备设置有具有高极化矩和高居里温度的小于50nm薄膜厚度的薄膜记录层，其中制造BaTiO 3的记录层，以便为了在三角晶体结构中以拟立方体方向<111>方向取向，为了增加极化力矩和居里温度，BaTiO 3膜中的晶胞在假立方体系中延伸超过2％ 111>方向与BaTiO 3的块状材料中的单元电池相比，其中为了在记录层的晶体结构中产生晶格应变，在作为基极层的电极层上外延生长记录层，铁电体存储元件设置有记录层，并且电子设备设置有铁电存储元件。

50. 发明授权

US5843570A Magneto-optical recording medium having large kerr rotational angle in short wavelength range 失效
标题翻译：在短波长范围内具有较大克尔旋转角度的磁光记录介质
公开(公告)号：US5843570A
公开(公告)日：1998-12-01
申请号：US789393
申请日：1997-01-29
申请人： Hiromu Miyazawa , Shoji Hoshina , Satoshi Shimokawato , Masaaki Ichikawa , Masaya Ishida , Takeo Kawase , Toshiaki Mikoshiba , Satoshi Nebashi , Tatsuya Shimoda
发明人： Hiromu Miyazawa , Shoji Hoshina , Satoshi Shimokawato , Masaaki Ichikawa , Masaya Ishida , Takeo Kawase , Toshiaki Mikoshiba , Satoshi Nebashi , Tatsuya Shimoda
IPC分类号： G11B11/105 , G11B5/66
CPC分类号： G11B11/10593 , G11B11/10582 , G11B11/10586 , Y10S428/90 , Y10T428/26 , Y10T428/265
摘要： In a magneto-optical recording medium, a protective layer 14, a first magnetic layer 11 formed of a light rare earth element-heavy rare earth element-transition metal alloy, a second magnetic layer 12 formed of a light rare earth element-heavy rare earth element-transition metal alloy, a third magnetic layer 13 formed of a light rare earth element-heavy rare earth element-transition metal alloy, another protective layer 15, and a reflection layer 16 are laminated in sequence on a transparent substrate 10. The first, second and third magnetic layers are sandwiched so as to form a recording film 17. The compositions of the first and third magnetic layers are so selected as to provide a large Kerr rotational angle in a short wavelength range (400 to 700 nm), which is high in the ratio of light rare earth element. On the other hand, the composition of the second magnetic layer is so selected as to be prominent in the characteristics for forming a perpendicular magnetized film, which is high in the ratio of heavy rare earth element. The recording film 17 formed by sandwiching the first, second and third magnetic layers has a large Kerr rotational angle in a short wavelength range as a whole, and further provides a high coercivity. The recording film 17 is formed thin (400 angstrom or less) so that light can transmit sufficiently therethrough. Further, when the three layers of sandwich structure is combined with the reflection layer 16, a more larger Kerr rotational angle can be obtained.
摘要翻译：在磁光记录介质中，由轻稀土元素重稀土元素过渡金属合金形成的保护层14，第一磁性层11，由稀土稀土元素重稀土形成的第二磁性层12 接地元素 - 过渡金属合金，由轻稀土元素 - 重稀土元素 - 过渡金属合金形成的第三磁性层13，另一个保护层15和反射层16依次层叠在透明基板10上。第一，第二和第三磁性层被夹持以形成记录膜17.第一和第三磁性层的组成被选择为在短波长范围（400-700nm）内提供较大的克尔旋转角，其中轻稀土元素的比例高。另一方面，第二磁性层的组成被选择为在用于形成重稀土元素的比率高的垂直磁化膜的特性方面是突出的。通过夹持第一，第二和第三磁性层而形成的记录膜17整体上在短波长范围内具有较大的克尔旋转角度，并进一步提供高的矫顽力。记录膜17形成为薄（400埃或更小），使得光可以充分透过。此外，当三层夹层结构与反射层16组合时，可以获得更大的克尔旋转角。

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