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41. 发明授权

US6049839A Data processor with multiple register queues 失效
标题翻译：具有多个寄存器队列的数据处理器
公开(公告)号：US6049839A
公开(公告)日：2000-04-11
申请号：US172170
申请日：1993-12-23
申请人： Hiroaki Fujii , Yasuhiro Inagami , Shigeo Takeuchi
发明人： Hiroaki Fujii , Yasuhiro Inagami , Shigeo Takeuchi
IPC分类号： G06F9/34 , G06F9/30 , G06F9/38 , G06F13/00
CPC分类号： G06F9/30134 , G06F9/384
摘要： A data processor includes a register group having registers of the number larger than the number of registers which can be designated by a register specifier field of an instruction. The register group consists of a plurality of register queues with respect to logical register numbers designated in the instruction, each register queue including a plurality of physical registers. In the data processor, a physical register number forming section is provided for converting the logical register number to a physical register number in the register queue corresponding to the logical register number, by using queue control information designated in the register specifier field and read/write information decided by the kind of the instruction and the position of the register specifier field in the instruction.
摘要翻译：数据处理器包括具有比可由指令的寄存器说明符字段指定的寄存器数量大的寄存器的寄存器组。寄存器组包括相对于指令中指定的逻辑寄存器号的多个寄存器队列，每个寄存器队列包括多个物理寄存器。在数据处理器中，提供物理寄存器号码形成部分，用于通过使用寄存器说明符字段中指定的队列控制信息和读取/写入将逻辑寄存器号码转换为对应于逻辑寄存器号码的寄存器队列中的物理寄存器号码指令种类决定的信息和指令中寄存器说明符字段的位置。

42. 发明授权

US6007712A Waste water treatment apparatus 失效
标题翻译：废水处理设备
公开(公告)号：US6007712A
公开(公告)日：1999-12-28
申请号：US30002
申请日：1998-02-25
申请人： Eiji Tanaka , Tamio Higashi , Takanori Kitamura , Takeshi Matsuda , Hiroaki Fujii , Naoshi Nakagawa , Shinji Komori , Tadao Shiotani , Masanobu Abe
发明人： Eiji Tanaka , Tamio Higashi , Takanori Kitamura , Takeshi Matsuda , Hiroaki Fujii , Naoshi Nakagawa , Shinji Komori , Tadao Shiotani , Masanobu Abe
IPC分类号： C02F3/10 , C02F3/12 , C02F3/30
CPC分类号： C02F3/085 , C02F3/108 , C02F3/1215 , C02F3/1268 , C02F3/302 , Y02W10/15 , Y10S210/903
摘要： A waste water treatment apparatus which is compact, and excellent in durability, has a high treatment performance and can stably operate for a long time is provided. In a waste water treatment apparatus at least comprising a waste water treatment tank in which a carrier particle immobilizing a microbe is charged and decomposing and eliminating an organic matter and/or an inorganic matter contained in a waste water, and a membrane module for filtrating a water to be treated which flows out from said treatment tank, a non-permeating water not passing thorough the membrane module is returned and circulated to said treatment tank. In a waste water treatment apparatus at least comprising a waste water treatment tank in which a carrier particle immobilizing a microbe is charged and decomposing and eliminating an organic matter and/or an inorganic matter contained in a waste water, a carrier immobilizing a microbe is an acetalized polyvinyl alcohol hydrogel.
摘要翻译：提供了一种紧凑且耐久性优异的废水处理装置，具有高的处理性能并能够长期稳定地操作。在至少包括其中固定有微生物的载体颗粒被填充并分解并除去废水中含有的有机物和/或无机物的废水处理槽的废水处理装置中，以及用于过滤从所述处理槽流出的待处理水，不通过膜组件的非渗透水返回并循环至所述处理槽。在废水处理装置中，至少包括其中固定有微生物的载体颗粒被填充并分解并除去废水中所含有机物和/或无机物的废水处理槽，固定微生物的载体是缩醛化聚乙烯醇水凝胶。

43. 发明授权

US5822348A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US5822348A
公开(公告)日：1998-10-13
申请号：US772769
申请日：1996-12-24
申请人： Hiroaki Fujii
发明人： Hiroaki Fujii
IPC分类号： H01S5/00 , H01S5/065 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/32 , H01S5/323 , H01S3/19
CPC分类号： H01S5/2231 , H01S5/0658 , H01S5/204 , H01S5/209 , H01S5/2209 , H01S5/221 , H01S5/222 , H01S5/2227 , H01S5/3207 , H01S5/3209 , H01S5/32325
摘要： The object of the present invention is to realize a transparent waveguide path AlGaInP laser which is capable of a low threshold current and a high light output efficiency without deterioration in characteristic due to crystal distortion. The semiconductor laser comprises an active layer formed on a GaAs substrate, upper and lower clad layers containing the active layer therebetween a current block layer which transmits oscillation light and has a stripe-shaped opening is formed on the upper clad layer, an etching stopper layer formed between the upper clad layer and the current block layer and on the upper clad layer exposed in a stripe shape by the opening section of the current block layer, the etching stopper layer containing no aluminium; and a clad layer formed on the current block layer and on the etching stopper layer exposed in a stripe shape by the opening section of the current block layer, wherein the upper clad layer is formed of a semiconductor containing AlGaInP or AlInP.
摘要翻译：本发明的目的是实现一种透明波导路径AlGaInP激光器，其能够具有低阈值电流和高光输出效率，而不会由于晶体失真而导致特性劣化。半导体激光器包括形成在GaAs衬底上的有源层，在上覆盖层上形成有包含有源层之间的有源层的上下包层，其中透射振荡光并具有条形开口的电流阻挡层，蚀刻阻挡层形成在上部包层和电流阻挡层之间，以及通过电流阻挡层的开口部分暴露于条状的上部包层，不含铝的蚀刻停止层; 以及通过当前阻挡层的开口部形成在电流阻挡层和蚀刻停止层上的覆盖层，其中，上覆盖层由包含AlGaInP或AlInP的半导体形成。

44. 发明授权

US5752256A Disk array apparatus and method for dividing and reading/writing partial data across a plurality of drive groups utilizing parallel processing 失效
标题翻译：磁盘阵列装置和方法，用于利用并行处理在多个驱动组中分割和读写部分数据
公开(公告)号：US5752256A
公开(公告)日：1998-05-12
申请号：US250446
申请日：1994-05-27
申请人： Hiroaki Fujii , Hitoshi Kakuta , Yoshifumi Takamoto
发明人： Hiroaki Fujii , Hitoshi Kakuta , Yoshifumi Takamoto
IPC分类号： G06F3/06 , G06F13/00
CPC分类号： G06F3/0613 , G06F3/0658 , G06F3/0689
摘要： A disk apparatus including a disk controller connected to a plurality of drives, each having a plurality of memory disks, and an access method to the disk apparatus, are described. Accordingly, a plurality of drives are grouped into a plurality of drive groups, and a data set is divided into a plurality of partial data having a data quantity that is accessible at a given time by each of the drive groups when an access request is generated from an external apparatus to the disk apparatus. Partial data are written into the different drive groups at different times, and successive partial data are written into different drive groups. The plurality of partial data may be transferred to the drive groups in parallel with the writing of partial data into the memory disks.
摘要翻译：描述了包括连接到多个驱动器的盘控制器的盘装置，每个驱动器具有多个存储器盘以及对盘装置的访问方法。因此，将多个驱动器分组为多个驱动组，并且当生成访问请求时，数据组被划分为具有在给定时间可访问的每个驱动组的数据量的多个部分数据从外部设备到盘装置。部分数据在不同时间写入不同的驱动器组，并且连续的部分数据被写入不同的驱动器组。可以将多个部分数据与将部分数据写入存储盘并行地传送到驱动组。

45. 发明授权

US5742628A Short wavelength laser emitting diode with an improved GaN system double heterostructure 失效
标题翻译：具有改进的GaN系统双异质结构的短波长激光发射二极管
公开(公告)号：US5742628A
公开(公告)日：1998-04-21
申请号：US650439
申请日：1996-05-20
申请人： Hiroaki Fujii
发明人： Hiroaki Fujii
IPC分类号： H01L33/06 , H01L33/14 , H01L33/16 , H01L33/20 , H01L33/28 , H01L33/32 , H01L33/34 , H01S5/00 , H01S5/02 , H01S5/10 , H01S5/227 , H01S5/323 , H01S5/343 , H01S3/19
CPC分类号： H01L33/32 , H01L33/16 , H01S5/32341 , H01S5/0213 , H01S5/2272
摘要： A GaN system compound semiconductor double heterostructure in a light emission device comprises an active layer sandwiched between first and second cladding layers. Those three layers are made of GaN system compound semiconductor materials. The first, second and third GaN system compound semiconductor materials have first, second and third hexagonal crystal structures of basal planes tilted from a (0001) plane by an angle in the range of 0 degree to a few degrees, and the basal planes are substantially parallel to interfaces of the active layer to the first and second cladding layers. The GaN system compound semiconductor double heterostructure have a pair of opposite resonance faces vertical to a direction in which a light is emitted, and for each of the first, second and third hexagonal crystal structures, a pair of opposite planes in the six planes vertical to the basal plane forms the opposite resonance faces.
摘要翻译：发光器件中的GaN系化合物半导体双异质结构包括夹在第一和第二覆层之间的有源层。这三层由GaN系化合物半导体材料制成。第一，第二和第三GaN系化合物半导体材料具有从（0001）面倾斜角度在0度到几度的范围内的基面的第一，第二和第三六边形晶体结构，并且基面实质上平行于有源层与第一和第二覆层的界面。 GaN系化合物半导体双异质结构具有与发射光的方向垂直的一对相反的共振面，并且对于第一，第二和第三六方晶系结构中的每一个，六个平面中的一对相对平面垂直于基面形成相对的共振面。

46. 发明授权

US5437471A Inflator with starter for side collision air bag device 失效
标题翻译：充气机带侧面碰撞气囊装置起动器
公开(公告)号：US5437471A
公开(公告)日：1995-08-01
申请号：US138258
申请日：1993-10-20
申请人： Ryouichi Yoshida , Hiroaki Fujii , Atsushi Tsuji , Tomoko Shimizu , Nobuya Osada , Takahiro Yamanishi
发明人： Ryouichi Yoshida , Hiroaki Fujii , Atsushi Tsuji , Tomoko Shimizu , Nobuya Osada , Takahiro Yamanishi
IPC分类号： B60R21/01 , B60R21/16 , B60R21/21 , B60R21/264 , B60R21/33 , B60R21/26
CPC分类号： B60R21/0136 , B60R21/21 , B60R21/2644 , B60R21/33 , B60R2021/26029
摘要： An inflator with a starter for starting a gas generator of a side collision air bag device is formed of: a needle disposed in the side face of a vehicle and made movable from the outside to the inside of the vehicle; an elastic member for urging the needle in the opposite direction to the movement of the needle; and a priming powder disposed forward of the movement of the needle. When the priming powder is hit by the needle, the ignition agent of the gas generator ignites to inflate an air bag.
摘要翻译：具有用于启动侧面碰撞气囊装置的气体发生器的起动器的充气机由以下部件形成：设置在车辆的侧面中的针，并且能够从车外的内部移动到内部; 弹性构件，用于沿与针的移动相反的方向推动针; 以及设置在针的运动之前的起动粉末。当起动粉末被针刺时，气体发生器的点火剂点燃以使气囊膨胀。

47. 发明授权

US5375877A Lateral collision detector 失效
标题翻译：横向碰撞检测器
公开(公告)号：US5375877A
公开(公告)日：1994-12-27
申请号：US138253
申请日：1993-10-20
申请人： Ryouichi Yoshida , Hiroaki Fujii , Takahiro Yamanishi , Tomoko Shimizu , Atsushi Tsuji , Nobuya Osada
发明人： Ryouichi Yoshida , Hiroaki Fujii , Takahiro Yamanishi , Tomoko Shimizu , Atsushi Tsuji , Nobuya Osada
IPC分类号： B60R21/00 , B60R21/01 , B60R21/16 , H01H35/14 , B60R21/32
CPC分类号： B60R21/0136 , H01H35/146
摘要： A lateral collision detector is formed of a wire extended along the inner face of the outer plate of an automotive door; and a signal output device adapted to be pulled and actuated by the wire.
摘要翻译：横向碰撞检测器由沿着汽车门的外板的内表面延伸的线形成; 以及适于由线拉动和致动的信号输出装置。

48. 发明授权

US5371756A Semiconductor blue-green laser diodes 失效
标题翻译：半导体蓝绿激光二极管
公开(公告)号：US5371756A
公开(公告)日：1994-12-06
申请号：US187506
申请日：1994-01-28
申请人： Hiroaki Fujii
发明人： Hiroaki Fujii
IPC分类号： H01L33/14 , H01L33/20 , H01L33/28 , H01L33/30 , H01L33/44 , H01S5/00 , H01S5/042 , H01S5/22 , H01S5/223 , H01S5/327 , H01S3/19
CPC分类号： H01L33/40 , H01S5/327 , H01L33/145 , H01L33/28 , H01S5/0421 , H01S5/2214 , H01S5/2231
摘要： A semiconductor blue-green light emitting device in a double heterostructure configuration includes a light emitting layer, a p-type clad layer and an n-type clad layer sandwiching the light emitting layer, a cap layer and a contact layer in this sequence formed on the clad layer. The light emitting layer contains at least one of CdZnSe, ZnSSe, and ZnSe, each of the p-type clad layer and the n-type clad layer contains at least one of ZnSSe, ZnSe and ZnMgSSe, the cap layer is of (Al.sub.X Ga.sub.1-X).sub.0.5 In.sub.0.5 P (0.ltoreq.X.ltoreq.1), and the contact layer is of Al.sub.X Ga.sub.1-X As (0.ltoreq.X.ltoreq.1). The diode provided is with improved ohmic characteristics.
摘要翻译：双异质结构构造的半导体蓝 - 绿发光器件包括：发光层，p型覆盖层和夹着发光层的n型覆盖层，在该顺序上形成的盖层和接触层包层。发光层含有CdZnSe，ZnSSe和ZnSe中的至少一种，p型覆盖层和n型覆盖层中的至少一种含有ZnSSe，ZnSe和ZnMgSSe中的至少一种，覆盖层为（Al x Ga 1- X）0.5In0.5P（0 <= = 1），并且接触层是Al x Ga 1-XAs（0≤X= 1）。所提供的二极管具有改善的欧姆特性。

49. 发明授权

US4852110A Semiconductor laser of a refractive index-guided type and a process for fabricating the same 失效
$Semiconductor laser of a refractive index-guided type and a process for fabricating the same$
标题翻译：折射率导向型半导体激光器及其制造方法
公开(公告)号：US4852110A
公开(公告)日：1989-07-25
申请号：US225454
申请日：1988-07-28
申请人： Hiroaki Fujii , Kenichi Kobayashi
发明人： Hiroaki Fujii , Kenichi Kobayashi
IPC分类号： H01S5/00 , H01S5/227 , H01S5/323
CPC分类号： H01S5/227 , H01S5/32325
摘要： A semiconductor laser of a refractive index-guided type comprises a GaAs (100) substrate having a mesa of (011) orientation thereon, a buffer layer grown on the top surface and side walls of the mesa of the GaAs (100) substrate and having a mesa on the top surface, a first cladding layer grown on the buffer layer in compliance with the outline on the top surface of the buffer layer having the mesa so that a mesa is provided, an active layer grown on the first cladding layer and separated on the side walls of the mesa of the first cladding layer, and a second cladding layer grown on the active layer, a boundary surface of which is in contact through a separated portion of the active layer with a boundary surface of the first cladding layer, wherein the first and second cladding layer are of a semiconductor material selected from AlGaInP and AlInP, and of a forbidden energy bandgap larger than that of the active layer. The semiconductor laser as described above is fabricated by a single etching process and a single and common metalorganic vapor phase epitaxy.

50. 发明授权

US08797477B2 Display 有权
标题翻译：显示
公开(公告)号：US08797477B2
公开(公告)日：2014-08-05
申请号：US13470528
申请日：2012-05-14
申请人： Hiroaki Fujii , Satoshi Mukoyama , Soya Araki , Hisanori Tsuboi , Hidetomo Miyake
发明人： Hiroaki Fujii , Satoshi Mukoyama , Soya Araki , Hisanori Tsuboi , Hidetomo Miyake
IPC分类号： G02F1/1333
CPC分类号： G02F1/133308 , G02F1/133615 , G02F2001/133314 , G02F2001/13332 , G02F2001/133331
摘要： A display includes: a display panel; a front-face member being provided on a front face of the display panel, the front-face member covering a surrounding section, or the surrounding section and other part of the display panel; a back-face member being provided on a back face of the display panel, the back-face member covering the back face, or the back face and other part of the display panel; and an adhesion section adhering the back-face member and the front-face member to each other, the adhesion section covering a circumference section of the display panel.
摘要翻译：显示器包括：显示面板; 前面构件设置在所述显示面板的前表面上，所述前面构件覆盖所述显示面板的周围部分或周围部分和其他部分; 背面构件设置在显示面板的背面上，背面构件覆盖显示面板的背面或背面和其他部分; 以及将所述背面构件和所述正面构件彼此粘附的粘合部，所述粘合部覆盖所述显示面板的周围部。

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