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41. 发明授权

US5820947A Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US5820947A
公开(公告)日：1998-10-13
申请号：US820985
申请日：1997-03-19
申请人： Kenji Itoh
发明人： Kenji Itoh
IPC分类号： B01J19/08 , C23C16/26 , C23C16/30 , C23C16/50 , C23C16/505 , H01J37/32 , H01L21/205 , H05H1/24
CPC分类号： H01J37/32009 , H01J37/32082 , H01J37/32541 , H05H1/24
摘要： In a vapor phase apparatus such as a plasma chemical vapor deposition (CVD) having a pair of electrodes, a surface of one of the electrodes has an uneven shape (concave portion and convex portion). An interval between the electrodes is 10 mm or less. A density of a convex portion is increased in a center portion of the electrode. An aspect ratio of the uneven shape is increased from a peripheral portion of the electrode to a center portion of the electrode. The aspect ratio represents a ratio (b/a) of a pitch (a) and a height (b) of the convex portion.
摘要翻译：在具有一对电极的诸如等离子体化学气相沉积（CVD）的气相装置中，一个电极的表面具有凹凸形状（凹部和凸部）。电极之间的间隔为10mm以下。凸部的密度在电极的中心部分增加。不平坦形状的长宽比从电极的周边部分增加到电极的中心部分。纵横比表示凸部（a）的比（b / a）和凸部的高度（b）。

42. 发明授权

US5796430A Video camera with a function to correct defective pixels of solid state image pickup device and method of correcting defective pixels of solid state image pickup device 失效
标题翻译：具有校正固态图像拾取装置的有缺陷像素的功能的摄像机以及校正固态图像拾取装置的有缺陷像素的方法
公开(公告)号：US5796430A
公开(公告)日：1998-08-18
申请号：US786733
申请日：1997-01-27
申请人： Minoru Katoh , Kenji Itoh , Hiroyasu Ohtsubo
发明人： Minoru Katoh , Kenji Itoh , Hiroyasu Ohtsubo
IPC分类号： H04N5/232 , H04N5/228 , H04N5/335 , H04N5/361 , H04N5/365 , H04N5/367 , H04N5/369 , H04N5/372 , H04N5/378 , H04N9/64
CPC分类号： H04N5/367 , H04N5/3656 , H04N5/372
摘要： When defective pixels of a solid state image pickup device of a video camera are corrected by signal processes, a white spot noise is detected by closing an iris and by comparing the signal level and a level of only a dark current. Further, in this case, a gain of an AGC circuit for controlling a gain of a video signal is raised and a precise detection is executed. By executing such a detecting operation at the time of turn-on or turn-off of a power source, the user is not annoying. In the ordinary photographing, a reference level in detection of a white spot noise is set to an optimum value in accordance with a temperature of the solid state image pickup device or its peripheral temperature or the gain of the AGC circuit so that the white spot noise detection is not influenced by the temperature of the solid state image pickup device or the operating state of the AGC circuit.
摘要翻译：当通过信号处理校正摄像机的固态图像拾取装置的缺陷像素时，通过闭合光圈并通过比较信号电平和仅暗电流的电平来检测白点噪声。此外，在这种情况下，提高用于控制视频信号的增益的AGC电路的增益，并且执行精确的检测。通过在电源的接通或断开时执行这种检测操作，用户不烦人。在普通拍摄中，根据固体摄像装置的温度或其周围温度或AGC电路的增益，将白点噪声检测的基准电平设定为最佳值，使得白点噪声检测不受固态图像拾取装置的温度或AGC电路的操作状态的影响。

43. 发明授权

US5766696A Plasma processing method 失效
标题翻译：等离子体处理方法
公开(公告)号：US5766696A
公开(公告)日：1998-06-16
申请号：US847497
申请日：1997-04-25
申请人： Kenji Itoh
发明人： Kenji Itoh
IPC分类号： H05H1/46 , B01J19/08 , C23C16/26 , C23C16/50 , C23C16/509 , C23C16/54 , H05H1/24
CPC分类号： C23C16/26 , C23C16/509 , C23C16/545 , H05H1/24
摘要： In a plasma processing apparatus including a cylindrical electrode and plural electrodes which are disposed to face the cylindrical electrode in a circumferential direction of the cylindrical electrode, the plural electrodes are designed to have the prescribed curvature corresponding to that of the surface of the cylindrical electrode. The interval between the cylindrical electrode and the plural electrodes may be fixed or stepwise varied in the circumferential direction. The area of each of the plural electrodes may be different from that of the other electrodes.
摘要翻译：在包括圆柱形电极和在圆柱形电极的圆周方向上面对圆柱形电极的多个电极的等离子体处理装置中，多个电极被设计成具有与圆柱形电极的表面对应的规定曲率。圆柱形电极和多个电极之间的间隔可以在圆周方向上固定或逐步变化。多个电极中的每一个的面积可以与其他电极的面积不同。

44. 发明授权

US5368937A Improved carbon containing thin film formed by increasing bias voltage during a plasma CVD process 失效
标题翻译：通过在等离子体CVD工艺期间增加偏置电压而形成的改进的含碳薄膜
公开(公告)号：US5368937A
公开(公告)日：1994-11-29
申请号：US626435
申请日：1990-12-12
申请人： Kenji Itoh
发明人： Kenji Itoh
IPC分类号： C01B31/04 , C01B31/06 , C23C16/26 , C23C16/27 , C23C16/30 , C23C16/517 , C30B25/10 , C30B29/04 , B32B9/04
CPC分类号： C23C16/517 , C23C16/26 , C30B25/105 , Y02P20/129 , Y10T428/30
摘要： The present invention discloses a carbon film on a substrate formed by increasing a bias voltage during a plasma CVD process, wherein the entire carbon film is amorphous and the hardness of the film increases away from the substrate in the direction of the thickness of the film.
摘要翻译：本发明公开了一种通过在等离子体CVD工艺期间增加偏置电压而形成的基板上的碳膜，其中整个碳膜是非晶的，并且膜的硬度在膜的厚度方向上远离基板。

45. 发明授权

US5196366A Method of manufacturing electric devices 失效
标题翻译：制造电气设备的方法
公开(公告)号：US5196366A
公开(公告)日：1993-03-23
申请号：US567352
申请日：1990-08-15
申请人： Shunpei Yamazaki , Kenji Itoh , Masaya Kadono , Naoki Hirose
发明人： Shunpei Yamazaki , Kenji Itoh , Masaya Kadono , Naoki Hirose
IPC分类号： H01L21/20 , H01L33/00
CPC分类号： H01L33/0054 , H01L21/02381 , H01L21/02527 , H01L21/0259 , H01L21/0262 , H01L21/02658 , Y10S117/913 , Y10S438/932
摘要： A method of manufacturing electric devices is described. Discrete single crystals are formed on a substrate to be coated. The formation of these crystals is carried out by forming discrete crystallization centers in the surface of the substrate and growing a single crystal from each center. The spaces separating these crystals are filled with an insulating material in order not to form short current paths therein. The top surfaces of the crystals are exposed in order to make contact with an upper electrode.

46. 发明授权

US5190824A Electrostatic-erasing abrasion-proof coating 失效
标题翻译：静电消除耐磨涂层
公开(公告)号：US5190824A
公开(公告)日：1993-03-02
申请号：US660949
申请日：1991-02-26
申请人： Kenji Itoh
发明人： Kenji Itoh
IPC分类号： C03C17/34 , C03C17/42 , C04B41/50 , C04B41/52 , C04B41/85 , C04B41/89 , C23C16/26 , C23C16/509 , H01L31/0216
CPC分类号： C04B41/009 , C03C17/3441 , C03C17/3488 , C03C17/42 , C04B41/5001 , C04B41/52 , C04B41/85 , C04B41/89 , C23C16/26 , C23C16/509 , H01L31/02161 , C04B2111/00405 , Y10T428/24942 , Y10T428/24983 , Y10T428/30 , Y10T428/31511 , Y10T428/31522 , Y10T428/31533 , Y10T428/31678 , Y10T428/31721 , Y10T428/31786 , Y10T428/31935
摘要： An abrasion-proof and static-erasing coating is formed on the contact surface of a contact image sensor. The coating comprises a first film having a high hardness and a low conductivity, a second film formed on the first film and having a low hardness and a high conductivity, and a third film having a high hardness and a high resistivity providing an abrasion-proof insulating external surface.
摘要翻译：在接触图像传感器的接触表面上形成耐磨损和防静电涂层。涂层包括具有高硬度和低导电性的第一膜，形成在第一膜上并具有低硬度和高导电性的第二膜，以及具有高硬度和高电阻率的第三膜，提供耐磨性绝缘外表面。

47. 发明授权

US5176791A Method for forming carbonaceous films 失效
标题翻译：形成碳质膜的方法
公开(公告)号：US5176791A
公开(公告)日：1993-01-05
申请号：US731353
申请日：1991-07-15
申请人： Kenji Itoh , Osamu Aoyagi
发明人： Kenji Itoh , Osamu Aoyagi
IPC分类号： B08B7/00 , C23C16/44 , C23G5/00
CPC分类号： B08B7/0035 , B08B7/00 , C23C16/4405 , C23G5/00
摘要： Cleaning a device to make a film made from carbon or containing carbon as a main ingredient is carried out by etching the interior of a deposition chamber where the film is formed, with an etching gas in a plasma state selected from the group of hydrogen, oxygen, and a gaseous fluoride, and then cleaning the interior of the deposition chamber with a cleaning gas selected from the group of argon and hydrogen in a plasma state.
摘要翻译：以碳或碳为主要成分制成薄膜的装置是通过用选自氢，氧等离子体状态的蚀刻气体蚀刻形成薄膜的沉积室的内部进行的和气态氟化物，然后用等离子体状态的选自氩和氢的清洁气体清洗沉积室的内部。

48. 发明授权

US4975144A Method of plasma etching amorphous carbon films 失效
标题翻译：等离子体蚀刻无定形碳膜的方法
公开(公告)号：US4975144A
公开(公告)日：1990-12-04
申请号：US324663
申请日：1989-03-17
申请人： Shunpei Yamazaki , Kenji Itoh
发明人： Shunpei Yamazaki , Kenji Itoh
IPC分类号： H01L21/311 , H01L21/3213 , H01L21/48
CPC分类号： H01L21/481 , H01L21/31116 , H01L21/31144 , H01L21/32139
摘要： An etching method for selectively eliminating carbon material deposited on a substrate is described. A layer of masking material may be applied over areas of the carbon coating whose removal is not desired. After disposing the substrate coated with the carbon material in a CVD reaction chamber, NF.sub.3 is admitted to the chamber and converted into a plasma etchant comprising fluorine ions or radicals by inputting high frequency energy. The fluorine ions or radicals remove all unmasked carbon, leaving a carbon film pattern on the substrate which may be used in the manufacture of an IC. The carbon material elimination method can also be used for chamber cleaning to removing carbon deposited debris from the inside of the CVD reaction chamber.
摘要翻译：描述了用于选择性地去除沉积在基板上的碳材料的蚀刻方法。可以将一层掩模材料施加在不需要去除的碳涂层的区域上。将涂覆有碳材料的基材设置在CVD反应室中之后，通过输入高频能量，将NF3进入室并转化为包含氟离子或自由基的等离子体蚀刻剂。氟离子或自由基除去所有未掩蔽的碳，在基板上留下可用于制造IC的碳膜图案。碳材料消除方法也可以用于室内清洁以从CVD反应室的内部除去碳沉积的碎屑。

49. 发明授权

US4970369A Electronic device manufacturing methods 失效
标题翻译：电子元件制造方法
公开(公告)号：US4970369A
公开(公告)日：1990-11-13
申请号：US333911
申请日：1989-04-06
申请人： Shunpei Yamazaki , Kenji Itoh , Susumu Nagayama
发明人： Shunpei Yamazaki , Kenji Itoh , Susumu Nagayama
IPC分类号： B41M5/26 , H01L21/302 , H01L27/142 , H01L31/0224 , H01L31/0392 , H05K3/02
CPC分类号： H01L31/03921 , H01L21/302 , H01L31/022466 , H01L31/046 , H01L31/0463 , H05K3/027 , Y02E10/50 , Y10S438/94
摘要： In a method of making an electronic device having at least a transparent conductive layer, which includes at least a step of forming a transparent conductive layer member and a step of forming a transparent conductive layer by patterning the transparent conductive layer member using a spot-shaped or linear laser beam or beams, each of which has a short wavelength of 400 nm or less and optical energy greater than the optical energy band gap of the transparent conductive layer.

50. 发明授权

US4680855A Electronic device manufacturing methods 失效
标题翻译：电子元件制造方法
公开(公告)号：US4680855A
公开(公告)日：1987-07-21
申请号：US791733
申请日：1985-10-28
申请人： Shunpei Yamazaki , Kenji Itoh , Susumu Nagayama
发明人： Shunpei Yamazaki , Kenji Itoh , Susumu Nagayama
IPC分类号： H01L21/268 , H01L21/311 , H01L21/3213 , H05K3/02 , H01L21/302 , H01L21/461
CPC分类号： H01L21/32131 , H01L21/268 , H01L21/31105 , H05K3/027 , Y10S438/94
摘要： An electronic device manufacturing method including a step of forming a layer member to be patterned, which is a conductive metal layer member, a laminate member of a transparent conductive layer and a non-transparent or reflective layer or a non-single-crystal semiconductor layer member, and a step of scanning the layer member by a spot-shaped laser beam or exposing the layer member to radiation by one or more linear pulsed laser beams, thereby forming the patterned layer.
摘要翻译：一种电子器件制造方法，包括形成作为导电金属层构件的图案化层构件的步骤，透明导电层和非透明或反射层或非单晶半导体层的层叠构件以及通过点形激光束扫描层构件或者通过一个或多个线性脉冲激光束将层构件暴露于辐射的步骤，从而形成图案化层。

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