专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明授权

US08324726B2 Semiconductor device, electrode member and electrode member fabrication method 有权
标题翻译：半导体器件，电极部件和电极部件的制造方法
公开(公告)号：US08324726B2
公开(公告)日：2012-12-04
申请号：US11351338
申请日：2006-02-10
申请人： Katsuya Okumura , Yoshikazu Takahashi , Kazunori Takenouchi
发明人： Katsuya Okumura , Yoshikazu Takahashi , Kazunori Takenouchi
IPC分类号： H01L23/34
CPC分类号： H01L23/49811 , H01L23/49827 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L25/0655 , H01L25/072 , H01L2224/37147 , H01L2224/40095 , H01L2224/40139 , H01L2224/40225 , H01L2224/45015 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/83801 , H01L2224/84801 , H01L2924/00014 , H01L2924/01002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/351 , H05K1/115 , H01L2924/00 , H01L2924/00015 , H01L2224/05599
摘要： A semiconductor device that improves the heat cycle resistance and power cycle resistance of a power module. An electrode member in which copper posts are formed in a plurality of perforations cut in a support made of a ceramic material is soldered onto a side of an IGBT where an emitter electrode is formed. By soldering the copper posts onto the electrode, heat generated in the IGBT is transferred to the electrode member and is radiated. In addition, even if a material of which the IGBT is made and copper differ in thermal expansivity, stress on a soldered interface is reduced and distortion is reduced. This suppresses the appearance of a crack. As a result, the heat cycle resistance and power cycle resistance of a power module can be improved.
摘要翻译：一种改善功率模块的热循环电阻和功率循环电阻的半导体器件。在由陶瓷材料制成的支撑体上切割的多个穿孔中形成铜柱的电极部件被焊接到形成有发射极的IGBT的一侧。通过将铜柱焊接到电极上，在IGBT中产生的热量转移到电极部件并被辐射。此外，即使制造IGBT的材料和铜的热膨胀性不同，焊接界面上的应力降低，并且变形减小。这样可以抑制裂纹的出现。结果，可以提高功率模块的耐热循环电阻和功率循环电阻。

42. 发明授权

US08283755B2 Multichip semiconductor device, chip therefor and method of formation thereof 有权
标题翻译：多芯片半导体器件，芯片及其形成方法
公开(公告)号：US08283755B2
公开(公告)日：2012-10-09
申请号：US13067180
申请日：2011-05-13
申请人： Nobuo Hayasaka , Katsuya Okumura , Keiichi Sasaki , Mie Matsuo
发明人： Nobuo Hayasaka , Katsuya Okumura , Keiichi Sasaki , Mie Matsuo
IPC分类号： H01L29/40
CPC分类号： H01L23/642 , H01L21/76898 , H01L23/367 , H01L23/481 , H01L25/0655 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/0401 , H01L2224/0557 , H01L2224/06181 , H01L2224/13025 , H01L2224/14181 , H01L2224/16145 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2225/06572 , H01L2225/06589 , H01L2225/1023 , H01L2225/1058 , H01L2924/01046 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/13091 , H01L2924/15174 , H01L2924/15192 , H01L2924/15311 , H01L2924/1532 , H01L2924/15331 , H01L2924/00
摘要： A multichip semiconductor device is disclosed in which chips are stacked each of which comprises a semiconductor substrate formed on top with circuit components and an interlayer insulating film formed on the top of the semiconductor substrate. At least one of the chips has a connect plug of a metal formed in a through hole that passes through the semiconductor substrate and the interlayer insulating film. The chip with the connect plug is electrically connected with another chip by that connect plug.
摘要翻译：公开了一种多芯片半导体器件，其中堆叠芯片，每个芯片包括形成在顶部的半导体衬底和电路部件，以及形成在半导体衬底的顶部上的层间绝缘膜。至少一个芯片具有穿过半导体衬底和层间绝缘膜的通孔中形成的金属的连接插头。具有连接插头的芯片通过该连接插头与另一个芯片电连接。

43. 发明授权

US08247289B2 Capacitor and manufacturing method thereof 有权
标题翻译：电容器及其制造方法
公开(公告)号：US08247289B2
公开(公告)日：2012-08-21
申请号：US11508141
申请日：2006-08-23
申请人： Yoshiki Yamanishi , Muneo Harada , Takahiro Kitano , Tatsuzo Kawaguchi , Yoshihiro Hirota , Kinji Yamada , Tomotaka Shinoda , Katsuya Okumura , Shuichi Kawano
发明人： Yoshiki Yamanishi , Muneo Harada , Takahiro Kitano , Tatsuzo Kawaguchi , Yoshihiro Hirota , Kinji Yamada , Tomotaka Shinoda , Katsuya Okumura , Shuichi Kawano
IPC分类号： H01L21/8242 , H01L21/20 , H01L21/00
CPC分类号： H01L23/50 , H01G4/228 , H01G4/33 , H01L23/481 , H01L24/81 , H01L2224/81801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01056 , H01L2924/01072 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/19041 , H01L2924/30105 , H05K1/162 , H05K3/002 , H05K2201/09509 , H05K2201/096 , H05K2201/10378
摘要： A capacitor having a high quality and a manufacturing method of the same are provided.A capacitor has a lower electrode formed on an oxide film, a dielectric layer formed on the lower electrode, an upper electrode formed so as to face the lower electrode with the dielectric layer between, and an upper electrode formed so as to cover the upper electrode, an opening portion of the upper electrode and an opening portion of the dielectric layer. By forming the upper electrode on the dielectric layer, it is possible to pattern the dielectric layer by using the upper electrode as a mask, and provide a capacitor having a high-quality dielectric layer by preventing impurity diffusion into the dielectric layer. By forming the upper electrode on the dielectric layer, it is possible to prevent the dielectric layer from being exposed to etching liquid, liquid developer, etc.
摘要翻译：提供了具有高质量的电容器及其制造方法。电容器具有形成在氧化膜上的下电极，形成在下电极上的电介质层，形成为与电极之间介电层相对的下电极的上电极和形成为覆盖上电极的上电极，上电极的开口部分和电介质层的开口部分。通过在电介质层上形成上电极，可以通过使用上电极作为掩模对电介质层进行图案化，并且通过防止杂质扩散到电介质层中来提供具有高质量电介质层的电容器。通过在电介质层上形成上部电极，可以防止电介质层暴露于蚀刻液体，液体显影剂等

44. 发明授权

US08174093B2 Multichip semiconductor device, chip therefor and method of formation thereof 有权
公开(公告)号：US08174093B2
公开(公告)日：2012-05-08
申请号：US12926104
申请日：2010-10-26
申请人： Nobuo Hayasaka , Katsuya Okumura , Keiichi Sasaki , Mie Matsuo
发明人： Nobuo Hayasaka , Katsuya Okumura , Keiichi Sasaki , Mie Matsuo
IPC分类号： H01L29/40
CPC分类号： H01L23/642 , H01L21/76898 , H01L23/367 , H01L23/481 , H01L25/0655 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/0401 , H01L2224/0557 , H01L2224/06181 , H01L2224/13025 , H01L2224/14181 , H01L2224/16145 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2225/06572 , H01L2225/06589 , H01L2225/1023 , H01L2225/1058 , H01L2924/01046 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/13091 , H01L2924/15174 , H01L2924/15192 , H01L2924/15311 , H01L2924/1532 , H01L2924/15331 , H01L2924/00
摘要： A multichip semiconductor device is disclosed in which chips are stacked each of which comprises a semiconductor substrate formed on top with circuit components and an interlayer insulating film formed on the top of the semiconductor substrate. At least one of the chips has a connect plug of a metal formed in a through hole that passes through the semiconductor substrate and the interlayer insulating film. The chip with the connect plug is electrically connected with another chip by that connect plug.

45. 发明申请

US20120024318A1 RETICLE CHUCK CLEANER 有权
公开(公告)号：US20120024318A1
公开(公告)日：2012-02-02
申请号：US13192694
申请日：2011-07-28
申请人： Masamitsu ITOH , Katsuya Okumura , Taro Inada , Jun Watanabe
发明人： Masamitsu ITOH , Katsuya Okumura , Taro Inada , Jun Watanabe
IPC分类号： B08B7/00 , B05D5/06 , B05D5/12 , B05D5/10
CPC分类号： B08B7/0028 , B05D3/0254 , B05D5/00 , G03F7/707 , G03F7/70925 , Y10T428/28 , Y10T428/2848
摘要： According to one embodiment, a reticle chuck cleaner for cleaning a reticle chuck of an EUV exposure apparatus includes a substrate having a shape to be carried to the reticle chuck of the EUV exposure apparatus, and an adhesive formed on one of the main surfaces of the substrate.
摘要翻译：根据一个实施例，用于清洁EUV曝光装置的光罩卡盘的掩模版卡盘清洁器包括具有要携带到EUV曝光装置的掩模版卡盘的形状的基板，以及形成在其中一个主表面上的粘合剂基质。

46. 发明申请

US20110215443A1 Multichip semiconductor device, chip therefor and method of formation thereof 有权
公开(公告)号：US20110215443A1
公开(公告)日：2011-09-08
申请号：US13067180
申请日：2011-05-13
申请人： Nobuo Hayasaka , Katsuya Okumura , Keiichi Sasaki , Mie Matsuo
发明人： Nobuo Hayasaka , Katsuya Okumura , Keiichi Sasaki , Mie Matsuo
IPC分类号： H01L29/41
CPC分类号： H01L23/642 , H01L21/76898 , H01L23/367 , H01L23/481 , H01L25/0655 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/0401 , H01L2224/0557 , H01L2224/06181 , H01L2224/13025 , H01L2224/14181 , H01L2224/16145 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2225/06572 , H01L2225/06589 , H01L2225/1023 , H01L2225/1058 , H01L2924/01046 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/13091 , H01L2924/15174 , H01L2924/15192 , H01L2924/15311 , H01L2924/1532 , H01L2924/15331 , H01L2924/00
摘要： A multichip semiconductor device is disclosed in which chips are stacked each of which comprises a semiconductor substrate formed on top with circuit components and an interlayer insulating film formed on the top of the semiconductor substrate. At least one of the chips has a connect plug of a metal formed in a through hole that passes through the semiconductor substrate and the interlayer insulating film. The chip with the connect plug is electrically connected with another chip by that connect plug.

47. 发明申请

US20110101522A1 Multichip semiconductor device, chip therefor and method of formation thereof 有权
标题翻译：多芯片半导体器件，芯片及其形成方法
公开(公告)号：US20110101522A1
公开(公告)日：2011-05-05
申请号：US12926104
申请日：2010-10-26
申请人： Nobuo Hayasaka , Katsuya Okumura , Keiichi Sasaki , Mie Matsuo
发明人： Nobuo Hayasaka , Katsuya Okumura , Keiichi Sasaki , Mie Matsuo
IPC分类号： H01L23/485
CPC分类号： H01L23/642 , H01L21/76898 , H01L23/367 , H01L23/481 , H01L25/0655 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/0401 , H01L2224/0557 , H01L2224/06181 , H01L2224/13025 , H01L2224/14181 , H01L2224/16145 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2225/06572 , H01L2225/06589 , H01L2225/1023 , H01L2225/1058 , H01L2924/01046 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/13091 , H01L2924/15174 , H01L2924/15192 , H01L2924/15311 , H01L2924/1532 , H01L2924/15331 , H01L2924/00
摘要： A multichip semiconductor device is disclosed in which chips are stacked each of which comprises a semiconductor substrate formed on top with circuit components and an interlayer insulating film formed on the top of the semiconductor substrate. At least one of the chips has a connect plug of a metal formed in a through hole that passes through the semiconductor substrate and the interlayer insulating film. The chip with the connect plug is electrically connected with another chip by that connect plug.
摘要翻译：公开了一种多芯片半导体器件，其中堆叠芯片，每个芯片包括形成在顶部的半导体衬底和电路部件，以及形成在半导体衬底的顶部上的层间绝缘膜。至少一个芯片具有穿过半导体衬底和层间绝缘膜的通孔中形成的金属的连接插头。具有连接插头的芯片通过该连接插头与另一个芯片电连接。

48. 发明授权

US07649369B2 Probe and method of manufacturing probe 失效
标题翻译：探头和探头的制造方法
公开(公告)号：US07649369B2
公开(公告)日：2010-01-19
申请号：US10591645
申请日：2005-03-03
申请人： Katsuya Okumura , Toshihiro Yonezawa
发明人： Katsuya Okumura , Toshihiro Yonezawa
IPC分类号： G01R31/02 , G01R31/28
CPC分类号： G01R1/06738 , G01R3/00 , Y10T29/5193
摘要： In accordance with an increase in speed, a wiring structure has rapidly become more microscopic and thinner and a wiring layer has become extremely thin, and therefore, giving a contact load to a probe for the inspection as has been conventionally done causes damage to a wiring layer and an insulation layer because the probe penetrates not only the oxide film but also the wiring layer or because of a concentration stress from the probe. On the other hand, decreasing the contact load causes unstable continuity between the probe and an electrode pad.It is an object of the present invention to surely and stably inspect an object to be inspected by breaking an oxide film with a low stylus pressure.The present invention is a probe that comes into electrical contact with an object to be inspected when inspecting an electrical characteristic of the object to be inspected, the probe including: a probe main body having a contact portion that comes into contact with the object to be inspected; and a plurality of conductive materials having tip portions projecting from the contact portion of the probe main body.
摘要翻译：根据速度的增加，布线结构迅速变得更微细而更薄，并且布线层变得非常薄，因此如以往那样对检查用探针进行接触负载，导致布线损坏层和绝缘层，因为探针不仅穿透氧化膜，而且穿透布线层，或者由于来自探针的浓度应力。另一方面，降低接触负载会导致探针与电极焊盘之间的连续性不稳定。本发明的目的是通过以低的触针压力破坏氧化膜来可靠且稳定地检查被检查物体。本发明是一种探测器，当检测被检查物体的电气特性时，与被检查物体电接触，该探针包括：探针主体，具有与物体接触的接触部分检查以及多个导电材料，其具有从探针主体的接触部分突出的尖端部分。

49. 发明申请

US20090293647A1 Sample Holder, Sample Suction Device Using the Same, and Sample Processing Method 有权
标题翻译：样品持有人，使用其的样品吸引装置和样品处理方法
公开(公告)号：US20090293647A1
公开(公告)日：2009-12-03
申请号：US12088669
申请日：2006-09-28
申请人： Takeshi Muneishi , Toshihiko Uemura , Katsuya Okumura
发明人： Takeshi Muneishi , Toshihiko Uemura , Katsuya Okumura
IPC分类号： G01N1/14 , B01L3/00
CPC分类号： H01L21/6875 , H01L21/68757
摘要： Because a sample holder 100 is composed of a plurality of convex parts 1 provided on a top face of a base substance 2, and the plurality of convex parts 1 are spherical surfaces 1a formed of a single crystal or amorphous material, frictional wear of the sample at contact parts between a sample 4 and the convex parts 1 is reduced, thereby making it possible to inhibit particle generation. Further, because a joining layer 3 is formed of a single crystal or amorphous material, there is no defect that particles scattered on the sample holder 100 fill up it, which makes it possible to easily keep it in a clean state by cleaning, and it is possible to effectively reduce reattachment of particles to the sample 4.
摘要翻译：由于样品保持器100由设置在基体2的顶面上的多个凸部1构成，多个凸部1是由单晶或非晶材料形成的球面1a，所以样品的摩擦磨损在样品4与凸部1之间的接触部分被还原，从而可以抑制颗粒的产生。此外，由于接合层3由单晶或非晶材料形成，所以不存在散布在样品架100上的颗粒填充的缺陷，这使得可以通过清洁容易地将其保持在清洁状态，并且其可以有效地减少颗粒到样品4的再附着。

50. 发明申请

US20090026368A1 APPARATUS AND METHOD FOR INSPECTING SAMPLE SURFACE 有权
标题翻译：检测样品表面的装置和方法
公开(公告)号：US20090026368A1
公开(公告)日：2009-01-29
申请号：US12162071
申请日：2007-01-24
申请人： Nobuharu Noji , Yoshihiko Naito , Hirosi Sobukawa , Masahiro Hatakeyama , Kenji Terao , Takeshi Murakami , Katsuya Okumura , Tatsuhiko Higashiki
发明人： Nobuharu Noji , Yoshihiko Naito , Hirosi Sobukawa , Masahiro Hatakeyama , Kenji Terao , Takeshi Murakami , Katsuya Okumura , Tatsuhiko Higashiki
IPC分类号： G01N23/00
CPC分类号： H01J37/29 , H01J37/045 , H01J2237/2446
摘要： Provided is a defect inspection apparatus and an inspection (or evaluation) method with highly improved accuracy, which would not be provided by the prior art, in the defect inspection apparatus used in a manufacturing process of a semiconductor device.Provided is a method for inspecting a sample surface with a projection type electron beam inspection apparatus, comprising the steps of: forming such an irradiation area on the sample surface by an electron beam generated from an electron gun 21 that has approximately a circular or elliptical shape of a size larger than a pattern on the sample surface; irradiating the electron beam substantially onto a center of the pattern on the sample surface; and forming an image on an electron detection plane of a detector from secondary electrons emanating from the sample surface in response to the irradiation of the electron beam for inspecting the sample surface.
摘要翻译：提供了在半导体器件的制造工艺中使用的缺陷检查装置中，现有技术不能提供高精度的缺陷检查装置和检查（或评价）方法。提供一种用投影型电子束检查装置检查样品表面的方法，包括以下步骤：通过由具有大致圆形或椭圆形的电子枪21产生的电子束在样品表面上形成这样的照射区域尺寸大于样品表面上的图案; 将电子束基本上照射到样品表面上的图案的中心; 以及响应于用于检查样品表面的电子束的照射，从从样品表面发射的二次电子在检测器的电子检测平面上形成图像。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式