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41. 发明申请

US20110240980A1 n-Type Doped Organic Materials and Methods Therefor 有权
标题翻译： n型掺杂有机材料及其方法
公开(公告)号：US20110240980A1
公开(公告)日：2011-10-06
申请号：US13080564
申请日：2011-04-05
申请人： Peng Wei , Zhenan Bao
发明人： Peng Wei , Zhenan Bao
IPC分类号： H01L51/10 , H01L51/40 , H01B1/12 , H01B1/04 , C07F5/02 , C07D409/04 , C07D235/18 , C07D409/14 , C07F7/18 , B82Y30/00
CPC分类号： C07D235/18 , B82Y10/00 , B82Y30/00 , C07D409/04 , C07D409/14 , H01L51/0047 , H01L51/0048 , H01L51/005 , H01L51/0533 , H01L51/0545 , H01L51/0566 , H01L51/5004 , H01L51/5296 , Y02E10/549 , Y02P70/521
摘要： In accordance with various embodiments, an organic electronic device includes an n-type dopant material including an imidazole-based material having a hydrogen-based material bonded between nitrogen atoms. The n-type dopant material n-dopes an organic material, and can be used to mitigate degradation in mobility due to conditions such as exposure to ambient atmosphere, which can effect an undesirable reduction in charge transport. Other embodiments are directed to carbon nanotubes or graphene structures with this type of n-type dopant, wherein the Fermi level for the carbon nanotubes or graphene structures is below −2.5 eV to effect such n-type doping.
摘要翻译：根据各种实施方案，有机电子器件包括n型掺杂剂材料，其包括在氮原子之间键合有氢基材料的咪唑类材料。 n型掺杂剂材料掺杂有机材料，并且可以用于减轻由于诸如暴露于环境大气的条件而导致的迁移率的降低，这可能导致电荷传输的不期望的减少。其他实施方案涉及具有这种类型的n型掺杂剂的碳纳米管或石墨烯结构，其中碳纳米管或石墨烯结构的费米能级低于-2.5eV以实现这种n型掺杂。

42. 发明授权

US07863603B1 Cross-linked organic thin-film dielectrics 有权
标题翻译：交联有机薄膜电介质
公开(公告)号：US07863603B1
公开(公告)日：2011-01-04
申请号：US11781725
申请日：2007-07-23
申请人： Zhenan Bao , Mark E. Roberts
发明人： Zhenan Bao , Mark E. Roberts
IPC分类号： H01L35/24
CPC分类号： G01N27/02 , H01L51/052 , H01L51/0558
摘要： Cross-linked dielectric layers are facilitated. According to an example embodiment, an organic polymer is mixed with a reaction-stabilized cross-linking material. The organic polymer is cross-linked with the reaction-stabilized cross-linking material to form a dielectric layer.
摘要翻译：交联电介质层容易。根据示例性实施方案，将有机聚合物与反应稳定的交联材料混合。有机聚合物与反应稳定的交联材料交联以形成电介质层。

43. 发明授权

US07855121B2 Method of forming organic thin film and method of manufacturing semiconductor device using the same 有权
公开(公告)号：US07855121B2
公开(公告)日：2010-12-21
申请号：US12382958
申请日：2009-03-27
申请人： Do Hwan Kim , Sangyoon Lee , Hector Alejandro Becerril Garcia , Mark Roberts , Zhenan Bao , Zihong Liu
发明人： Do Hwan Kim , Sangyoon Lee , Hector Alejandro Becerril Garcia , Mark Roberts , Zhenan Bao , Zihong Liu
IPC分类号： H01L21/20
CPC分类号： H01L51/0003 , H01L51/0012 , H01L51/0068 , H01L51/0541 , H01L51/0558
摘要： Provided are a method of forming an organic semiconductor thin film and a method of manufacturing a semiconductor device using the. According to example embodiments, a method of forming an organic semiconductor thin film at least may include exposing a lower substrate coated with an organic semiconductor solution using a method of generating a shearing stress to the portion of the lower substrate coated with the organic semiconductor solution. A guide structure may be formed adjacent to the organic semiconductor solution.

44. 发明申请

US20090294760A1 ORGANIC SEMICONDUCTORS AND GROWTH APPROACHES THEREFOR 有权
标题翻译：有机半导体及其增长方法
公开(公告)号：US20090294760A1
公开(公告)日：2009-12-03
申请号：US12127323
申请日：2008-05-27
申请人： Ajay A. Virkar , Stefan Christian Bernhardt Mannsfeld , Zhenan Bao
发明人： Ajay A. Virkar , Stefan Christian Bernhardt Mannsfeld , Zhenan Bao
IPC分类号： H01L51/40 , H01L51/10
CPC分类号： H01L51/0003 , H01L51/0012 , H01L51/0545
摘要： Organic semiconductor devices exhibit desirable mobility characteristics. In connection with various example embodiments, a monolayer of methyl-terminated molecules exhibits density characteristics that are sufficient to promote two-dimensional growth of organic semiconductor material formed thereupon. In some applications, the methyl-terminated molecules are sufficiently dense to dominate inter-layer interactions between layers of the organic semiconductor material.
摘要翻译：有机半导体器件具有理想的移动特性。关于各种示例性实施方案，甲基封端的分子的单层表现出足以促进在其上形成的有机半导体材料的二维生长的密度特性。在一些应用中，甲基封端的分子足够致密以支配有机半导体材料的层之间的层间相互作用。

45. 发明申请

US20090236591A1 N,N'-BIS(FLUOROPHENYLALKYL)-SUBSTITUTED PERYLENE-3,4:9,10-TETRACARBOXIMIDES, AND THE PREPARATION AND USE THEREOF 审中-公开
标题翻译： N，N'-BIS（氟代戊基） - 取代的PERYLENE-3,4：9,10-四羧酰氧基，其制备和用途
公开(公告)号：US20090236591A1
公开(公告)日：2009-09-24
申请号：US12406448
申请日：2009-03-18
申请人： Martin Konemann , Rudiger Schmidt , Frank Wurthner , Zhenan Bao , Joon Hak Oh
发明人： Martin Konemann , Rudiger Schmidt , Frank Wurthner , Zhenan Bao , Joon Hak Oh
IPC分类号： H01L51/30 , C07D471/06 , C07D493/06
CPC分类号： C07D471/06 , C07D493/06 , C09B5/62 , H01L51/0053 , H01L51/0545 , Y02E10/549
摘要： The present invention relates to N,N′-bis(fluorophenylalkyl)-substituted perylene-3,4:9,10-tetracarboximides, their preparation and their use as charge transport materials, exciton transport materials or emitter materials.
摘要翻译：本发明涉及N，N'-双（氟苯基烷基） - 取代的二萘嵌-3,4：9,10-四甲酰亚胺，它们的制备及其作为电荷传输材料，激子传输材料或发射体材料的用途。

46. 发明授权

US07569416B2 Forming closely spaced electrodes 有权
标题翻译：形成紧密间隔的电极
公开(公告)号：US07569416B2
公开(公告)日：2009-08-04
申请号：US11424655
申请日：2006-06-16
申请人： Zhenan Bao , Jie Zheng , James C. Sturm , Troy Graves-Abe
发明人： Zhenan Bao , Jie Zheng , James C. Sturm , Troy Graves-Abe
IPC分类号： H01L21/00
CPC分类号： B82Y30/00 , B82Y10/00 , B82Y40/00 , H01L51/0021 , H01L51/0595 , Y10S977/858 , Y10S977/891 , Y10T428/26
摘要： The present invention provides an apparatus and a method of fabricating the apparatus. The apparatus comprises a substrate having a planar surface and first and second electrodes located on the planar surface. The first electrode has a top surface and a lateral surface, and the lateral surface has an edge near or in contact with the substrate. An electrode insulating layer is located on the top surface and a self-assembled layer located on the lateral surface. The second electrode is in contact with both the self-assembled layer and the electrode insulating layer.
摘要翻译：本发明提供一种制造该装置的装置和方法。该装置包括具有平坦表面的基底和位于平坦表面上的第一和第二电极。第一电极具有顶表面和侧表面，并且侧表面具有与基底接近或接触的边缘。电极绝缘层位于顶表面上，并且位于侧表面上的自组装层。第二电极与自组装层和电极绝缘层接触。

47. 发明申请

US20090078312A1 VERFAHREN ZUR HERSTELLUNG VON MIT RYLENTETRACARBONSAEUREDIIMIDEN BESCHICHTETEN SUBSTRATEN 审中-公开
公开(公告)号：US20090078312A1
公开(公告)日：2009-03-26
申请号：US12212199
申请日：2008-09-17
申请人： Martin Konemann , Torsten Noe , Zhenan Bao , Joon Hak Oh
发明人： Martin Konemann , Torsten Noe , Zhenan Bao , Joon Hak Oh
IPC分类号： H01L31/042 , C07D471/04 , H01L51/05 , H01J1/63 , H01L51/40
CPC分类号： C07D471/04
摘要： The present invention relates to a process for producing a substrate coated with rylenetetracarboximides, in which a substrate is treated with an N,N′-bisubstituted rylenetetracarboximide and the treated substrate is heated to a temperature at which the N,N′-bisubstituted rylenetetracarboximide is converted to the corresponding N,N′-unsubstituted compound. The present invention further relates to semiconductor units, organic solar cells, excitonic solar cells and organic light-emitting diodes which comprise a substrate produced by this process. The present invention further relates to a process for preparing N,N′-unsubstituted rylenetetracarboximides, in which the corresponding N,N′-bisubstituted rylenetetracarboximides are provided and heated to a temperature at which these compounds are converted to the corresponding N,N′-unsubstituted compounds.
摘要翻译：本发明涉及一种制备涂覆有四环四甲酰亚胺的基材的方法，其中用N，N'-二取代的三环四溴二酰亚胺处理基材，将处理过的基材加热至N，N'-二取代的四环四溴二酰亚胺转化为相应的N，N'-未取代的化合物。本发明还涉及半导体单元，有机太阳能电池，激子太阳能电池和有机发光二极管，其包括通过该方法制造的基板。本发明进一步涉及制备N，N'-未取代的四环四甲酰亚胺的方法，其中提供相应的N，N'-二取代的四环四甲酰亚胺，加热至这些化合物转化为相应的N，未取代的化合物。

48. 发明申请

US20080134961A1 SINGLE-CRYSTAL ORGANIC SEMICONDUCTOR MATERIALS AND APPROACHES THEREFOR 审中-公开
标题翻译：单晶有机半导体材料及其应用
公开(公告)号：US20080134961A1
公开(公告)日：2008-06-12
申请号：US11932057
申请日：2007-10-31
申请人： Zhenan Bao , Alejandro L. Briseno , Colin C. Reese , Stefan C. B. Mannsfeld , Shuhong Liu , Mang-Mang Ling
发明人： Zhenan Bao , Alejandro L. Briseno , Colin C. Reese , Stefan C. B. Mannsfeld , Shuhong Liu , Mang-Mang Ling
IPC分类号： C30B23/00 , H01L51/00
CPC分类号： C30B23/005 , B82Y10/00 , C30B23/002 , C30B29/54 , H01L51/0012 , H01L51/0046 , H01L51/052
摘要： Patterned single crystals and related devices are facilitated. According to an example embodiment of the present invention, organic semiconducting single-crystals are manufactured using a plurality of surface regions on a substrate. The diffusivity and/or the rate of desorption is controlled at each surface region and at the substrate to grow at least one organic semiconducting single crystal at each surface region from a vapor-phase organic material. This control is effected, for example, before and/or during the introduction of vapor-phase organic material to the surface regions. In some embodiments, the surface regions include an organic film such as octadecyltriethoxysilane (OTS), and in other embodiments, the surface regions include carbon nanotube bundles, either of which can be implemented to exhibit a surface roughness and/or other characteristics that facilitate selective crystal nucleation.
摘要翻译：图形化的单晶和相关器件便利。根据本发明的示例性实施例，使用在基板上的多个表面区域来制造有机半导体单晶。在每个表面区域和底物处控制扩散率和/或解吸速率，以在气相有机材料的每个表面区域生长至少一个有机半导体单晶。该控制例如在将气相有机材料引入表面区域之前和/或期间进行。在一些实施方案中，表面区域包括诸如十八烷基三乙氧基硅烷（OTS）的有机膜，并且在其它实施方案中，表面区域包括碳纳米管束，其中任一种可以被实现为表现出表面粗糙度和/或促进选择性的其他特性晶体成核。

49. 发明申请

US20080035914A1 Use of perylene diimide derivatives as air-stable n-channel organic semiconductors 审中-公开
标题翻译：苝二酰亚胺衍生物用作空气稳定的n型有机半导体
公开(公告)号：US20080035914A1
公开(公告)日：2008-02-14
申请号：US11502544
申请日：2006-08-11
申请人： Martin Konemann , Peter Erk , Marcos Gomez , Zhenan Bao
发明人： Martin Konemann , Peter Erk , Marcos Gomez , Zhenan Bao
IPC分类号： H01L51/00 , C07D471/02
CPC分类号： H01L51/0053 , C07D471/06 , C09B5/62 , H01L51/0025 , H01L51/0525 , H01L51/0545 , Y02E10/549
摘要： The present invention relates to the use of perylene diimide derivatives as air-stable n-type organic semiconductors.
摘要翻译：本发明涉及苝二酰亚胺衍生物作为空气稳定的n型有机半导体的用途。

50. 发明授权

US07160754B2 P-type OFET with fluorinated channels 有权
标题翻译：带有氟化通道的P型OFET
公开(公告)号：US07160754B2
公开(公告)日：2007-01-09
申请号：US11337897
申请日：2006-01-23
申请人： Zhenan Bao , Evert-Jan Borkent
发明人： Zhenan Bao , Evert-Jan Borkent
IPC分类号： H01L51/40
CPC分类号： H01L51/0508 , H01L51/0036
摘要： The present invention provides an organic field-effect transistor (OFET) and a method of fabricating the OFET. The OFET, configured to function as a p-type semiconductor, includes a substrate having a top surface and a semiconductor layer located over the top surface. The semiconductor layer comprises organic semiconductor molecules. Each of the organic semiconductor molecules includes a core having conjugated pi bonds, a fluorinated alkyl group, and an alkyl spacer group having a chain of two or more carbon atoms. One end of the chain is bonded to the fluorinated alkyl group and another end of the chain is bonded to the core. Substituents coupled to the carbon atoms have an electronegativity of less than about 4.
摘要翻译：本发明提供有机场效应晶体管（OFET）和制造OFET的方法。被配置为用作p型半导体的OFET包括具有顶表面和位于顶表面上方的半导体层的衬底。半导体层包括有机半导体分子。每个有机半导体分子包括具有共轭π键的核，氟化烷基和具有两个或更多个碳原子的链的烷基间隔基。链的一端与氟化烷基结合，链的另一端与核结合。与碳原子偶联的取代基具有小于约4的电负性。

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