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41. 发明授权

US08743030B2 Display device and driving method of display device 失效
标题翻译：显示装置和显示装置的驱动方法
公开(公告)号：US08743030B2
公开(公告)日：2014-06-03
申请号：US12813885
申请日：2010-06-11
申请人： Hideaki Shishido
发明人： Hideaki Shishido
IPC分类号： G09G3/30
CPC分类号： H01L27/1225 , G09G3/3241 , G09G2300/0465 , G09G2300/0809 , G09G2300/0819 , G09G2300/0852 , G09G2300/0861 , G09G2310/0251 , G09G2310/0256 , G09G2310/0262 , G09G2320/0223 , G09G2320/043 , H01L27/12 , H01L27/1214 , H01L27/127 , H01L27/13
摘要： One feature of the present invention includes first to third steps of holding a voltage, corresponding to a difference between a voltage applied to a first power supply line and a threshold voltage of a first transistor, between both electrodes of first and second storage capacitors; holding a voltage, corresponding to a difference between a voltage applied to the first power supply line and a gate-source voltage of the first transistor, which is necessary to supply a light-emitting element with a current equivalent to a video signal current inputted into a signal line, between both the electrodes of the second storage capacitor; and applying a voltage based on the voltage held in the first and second storage capacitors in the first and second steps to a gate electrode of the first transistor; therefore, a current is supplied to the light-emitting element through the first transistor.
摘要翻译：本发明的一个特征包括在第一和第二存储电容器的两个电极之间保持对应于施加到第一电源线的电压与第一晶体管的阈值电压之间的差的电压的第一至第三步骤; 保持对应于施加到第一电源线的电压与第一晶体管的栅极 - 源极电压之间的差的电压，该电压是为了向发射元件提供与输入的视频信号电流相当的电流所必需的在第二存储电容器的两个电极之间的信号线; 以及将第一和第二步骤中保持在第一和第二存储电容器中的电压的电压施加到第一晶体管的栅电极; 因此，通过第一晶体管将电流提供给发光元件。

42. 发明授权

US08512917B2 Photomask 有权
标题翻译：光掩模
公开(公告)号：US08512917B2
公开(公告)日：2013-08-20
申请号：US13093974
申请日：2011-04-26
申请人： Hideaki Shishido , Yuto Yakubo , Hirotada Oishi
发明人： Hideaki Shishido , Yuto Yakubo , Hirotada Oishi
IPC分类号： G03F1/26 , G03F1/36
CPC分类号： G03F1/36
摘要： A photomask is provided, with which the roundness of a corner portion of a resist mask can be reduced in a photolithography step. Further, a method for manufacturing a semiconductor device with less variation is provided. A photomask includes an auxiliary pattern at a corner portion of a light-blocking portion, and (k+1) sides (k is a natural number of 3 or more) form k obtuse angles in the auxiliary pattern. Alternatively, a photomask includes an auxiliary pattern at a corner portion of a light-blocking portion, and the auxiliary pattern includes a zigzag curve.
摘要翻译：提供了一种光掩模，利用该光掩模可以在光刻步骤中减小抗蚀剂掩模的角部的圆度。此外，提供了一种具有较小变化的半导体器件的制造方法。光掩模在遮光部分的角部包括辅助图案，并且辅助图案中的（k + 1）边（k是3以上的自然数）形成k个钝角。或者，光掩模在遮光部分的角部包括辅助图案，并且辅助图案包括锯齿形曲线。

43. 发明授权

US08482004B2 Light-emitting display device and electronic device including the same 有权
标题翻译：发光显示装置及包括其的电子装置
公开(公告)号：US08482004B2
公开(公告)日：2013-07-09
申请号：US12897299
申请日：2010-10-04
申请人： Ryo Arasawa , Hideaki Shishido
发明人： Ryo Arasawa , Hideaki Shishido
IPC分类号： H01L29/04
CPC分类号： H01L27/124 , H01L27/1225 , H01L33/16
摘要： An object is to provide a light-emitting display device in which a pixel including a thin film transistor using an oxide semiconductor has a high aperture ratio. The light-emitting display device includes a plurality of pixels each including a thin film transistor and a light-emitting element. The pixel is electrically connected to a first wiring functioning as a scan line. The thin film transistor includes an oxide semiconductor layer over the first wiring with a gate insulating film therebetween. The oxide semiconductor layer is extended beyond the edge of a region where the first wiring is provided. The light-emitting element and the oxide semiconductor layer overlap with each other.
摘要翻译：本发明的目的是提供一种发光显示装置，其中包括使用氧化物半导体的薄膜晶体管的像素具有高开口率。发光显示装置包括多个像素，每个像素包括薄膜晶体管和发光元件。像素电连接到用作扫描线的第一布线。薄膜晶体管包括在第一布线之间的氧化物半导体层，其间具有栅极绝缘膜。氧化物半导体层延伸超过设置有第一布线的区域的边缘。发光元件和氧化物半导体层彼此重叠。

44. 发明授权

US08477085B2 Semiconductor device and driving method thereof 有权
标题翻译：半导体装置及其驱动方法
公开(公告)号：US08477085B2
公开(公告)日：2013-07-02
申请号：US11951817
申请日：2007-12-06
申请人： Hideaki Shishido
发明人： Hideaki Shishido
IPC分类号： G09G3/20
CPC分类号： G09G3/3233 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2310/0262 , G09G2320/043 , H01L27/3265 , H01L2251/5315 , H01L2251/5323
摘要： A display device which can compensate for variations of the threshold voltage of transistors and suppress variations in luminance, and a driving method thereof are provided. Current is supplied to a light emitting element and light is emitted from the light emitting element by following steps: in the first period initial voltage is stored in a storage capacitor; in the second period, voltage based on video signal voltage and the threshold voltage of the transistor is stored in the storage capacitor; and in the third period, the voltage stored in the storage capacitor in the second period is applied to a gate electrode of the transistor. By these operation processes, the current which compensates the effect of the variations of the threshold voltage of the transistor can be supplied to the light emitting element. Therefore, variations in luminance are suppressed.
摘要翻译：提供了能够补偿晶体管的阈值电压的变化并抑制亮度变化的显示装置及其驱动方法。电流被提供给发光元件，并且通过以下步骤从发光元件发射光：在第一周期中，初始电压被存储在存储电容器中; 在第二时段中，基于视频信号电压和晶体管的阈值电压的电压被存储在存储电容器中; 并且在第三时段中，将在第二周期中存储在存储电容器中的电压施加到晶体管的栅电极。通过这些操作处理，可以向发光元件提供补偿晶体管的阈值电压的变化的影响的电流。因此，抑制亮度的变化。

45. 发明申请

US20090231021A1 Semiconductor Device 有权
标题翻译：半导体器件
公开(公告)号：US20090231021A1
公开(公告)日：2009-09-17
申请号：US12400380
申请日：2009-03-09
申请人： Jun Koyama , Yoshifumi Tanada , Hideaki Shishido
发明人： Jun Koyama , Yoshifumi Tanada , Hideaki Shishido
IPC分类号： G05F3/02
CPC分类号： H01L27/0251 , G02F1/136204
摘要： An element is protected without hampering an actual operation in the case where overvoltage that might damage the element is applied. A semiconductor device includes a first potential supply terminal 100; a second potential supply terminal 101; a protection circuit 107 which includes a voltage divider 102 electrically connected to the first potential supply terminal 100 and the second potential supply terminal 101, a control circuit 103, and a bypass circuit 106; and a functional circuit 108 which is electrically connected to the first potential supply terminal 100 and the second potential supply terminal 101 through the protection circuit 107.
摘要翻译：在可能损坏元件的过电压被施加的情况下，元件被保护而不妨碍实际操作。半导体器件包括第一电位供给端子100; 第二电位供给端子101; 保护电路107，其包括电连接到第一电位端子100和第二电位端子101的分压器102，控制电路103和旁路电路106; 以及通过保护电路107与第一电位供给端子100和第二电位供给端子101电连接的功能电路108。

46. 发明授权

US08913050B2 Photoelectric conversion device and electronic device having the same 有权
标题翻译：光电转换装置和具有该光电转换装置的电子装置
公开(公告)号：US08913050B2
公开(公告)日：2014-12-16
申请号：US13365305
申请日：2012-02-03
申请人： Hideaki Shishido , Atsushi Hirose
发明人： Hideaki Shishido , Atsushi Hirose
IPC分类号： G09G3/22 , H04N5/335 , H01L27/32 , G01J1/42 , G09G3/32 , G05F3/26 , G01J1/02 , G01J1/44 , H01L27/146 , H04N5/235 , H01L27/12
CPC分类号： H01L27/1214 , G01J1/02 , G01J1/0209 , G01J1/42 , G01J1/44 , G05F3/262 , G09G3/3241 , H01L27/1266 , H01L27/14609 , H01L27/14687 , H04N5/2351
摘要： A plurality of transistors in which ratios of a channel length L to a channel width W, α=W/L, are different from each other is provided in parallel as output side transistors 105a to 105c in a current mirror circuit 101 which amplifies a photocurrent of a photoelectric conversion device and an internal resistor is connected to each of the output side transistors 105a to 105c in series. The sum of currents which flow through the plurality of transistors and the internal resistor is output, whereby a transistor with large amount of α can be driven in a linear range with low illuminance, and a transistor with small amount of α can be driven in a linear range with high illuminance, so that applicable illuminance range of the photoelectric conversion device can be widened.
摘要翻译：在通过放大光电流的电流镜电路101中，作为输出侧晶体管105a〜105c并联设置多个晶体管，其中沟道长度L与沟道宽度W，α= W / L的比例彼此不同的一个光电转换装置和一个内部电阻器串联连接到每个输出侧晶体管105a至105c。输出流过多个晶体管的电流和内部电阻器的总和，由此可以以低照度在线性范围内驱动具有大量α的晶体管，并且可以在a中驱动具有少量α的晶体管具有高照度的线性范围，可以扩大光电转换装置的适用照度范围。

47. 发明授权

US08442183B2 Pulse signal output circuit and shift register 有权
标题翻译：脉冲信号输出电路和移位寄存器
公开(公告)号：US08442183B2
公开(公告)日：2013-05-14
申请号：US13036140
申请日：2011-02-28
申请人： Seiko Amano , Kouhei Toyotaka , Hiroyuki Miyake , Aya Miyazaki , Hideaki Shishido , Koji Kusunoki
发明人： Seiko Amano , Kouhei Toyotaka , Hiroyuki Miyake , Aya Miyazaki , Hideaki Shishido , Koji Kusunoki
IPC分类号： G11C19/00
CPC分类号： G11C19/28 , G09G3/3677 , G09G3/3696 , G09G2300/0809 , G09G2310/0286 , G11C19/184 , H01L25/03 , H01L27/1222 , H01L27/1225 , H01L27/124 , H01L27/1251 , H01L27/127 , H01L27/1288 , H01L2924/0002 , H03K19/0013 , H05K7/02 , H01L2924/00
摘要： An object is to provide a pulse signal output circuit capable of operating stably and a shift register including the pulse signal output circuit. A pulse signal output circuit according to one embodiment of the disclosed invention includes first to tenth transistors. The ratio W/L of the channel width W to the channel length L of the first transistor and W/L of the third transistor are each larger than W/L of the sixth transistor. W/L of the fifth transistor is larger than W/L of the sixth transistor. W/L of the fifth transistor is equal to W/L of the seventh transistor. W/L of the third transistor is larger than W/L of the fourth transistor. With such a structure, a pulse signal output circuit capable of operating stably and a shift register including the pulse signal output circuit can be provided.
摘要翻译：目的在于提供能够稳定运行的脉冲信号输出电路和包括脉冲信号输出电路的移位寄存器。根据所公开的发明的一个实施例的脉冲信号输出电路包括第一至第十晶体管。沟道宽度W与第一晶体管的沟道长度L和第三晶体管的W / L的比W / L分别大于第六晶体管的W / L。第五晶体管的W / L大于第六晶体管的W / L。第五晶体管的W / L等于第七晶体管的W / L。第三晶体管的W / L大于第四晶体管的W / L。通过这样的结构，可以提供能够稳定运行的脉冲信号输出电路和包括脉冲信号输出电路的移位寄存器。

48. 发明授权

US08368145B2 Semiconductor device and electronic device 有权
标题翻译：半导体器件和电子器件
公开(公告)号：US08368145B2
公开(公告)日：2013-02-05
申请号：US12479291
申请日：2009-06-05
申请人： Osamu Fukuoka , Masahiko Hayakawa , Hideaki Shishido
发明人： Osamu Fukuoka , Masahiko Hayakawa , Hideaki Shishido
IPC分类号： H01L33/00
CPC分类号： H01L27/14692 , H01L24/06 , H01L27/14603 , H01L27/14609 , H01L27/14636 , H01L2924/12043 , H01L2924/15788 , H01L2924/00
摘要： A semiconductor device has a structure including the first semiconductor region 103 which is provided in the first terminal portion 100 and includes the first n-type impurity region 106, the first resistance region 107 provided at an inner periphery portion of the first n-type impurity region 106 in a plane view, and the first p-type impurity region 108 provided at an inner periphery portion of the first resistance region 107 in the plane view, and the second semiconductor region 104 which is provided in the second terminal portion 101 and includes the second p-type impurity region 109, the second resistance region 110 provided at an inner periphery portion of the second p-type impurity region 109 in the plane view, and the second n-type impurity region 111 provided at an inner periphery portion of the second resistance region 110 in the plane view.
摘要翻译：半导体器件具有包括设置在第一端子部分100中并包括第一n型杂质区域106的第一半导体区域103的结构，设置在第一n型杂质的内周部分的第一电阻区域107 在俯视图中设置在第一电阻区域107的内周部的第一p型杂质区域108和设置在第二端子部101中的第二半导体区域104，第二p型杂质区域109，在平面图中设置在第二p型杂质区域109的内周部分的第二电阻区域110和设置在第二p型杂质区域109的内周部分的第二n型杂质区域111 平面图中的第二电阻区域110。

49. 发明授权

US08354724B2 Semiconductor device and electronic device 有权
标题翻译：半导体器件和电子器件
公开(公告)号：US08354724B2
公开(公告)日：2013-01-15
申请号：US12073721
申请日：2008-03-10
申请人： Hideaki Shishido
发明人： Hideaki Shishido
IPC分类号： H01L23/62
CPC分类号： H01L27/14 , H01L23/60 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： The present invention relates to a semiconductor device which includes a photoelectric conversion layer; an amplifier circuit amplifying an output current of the photoelectric conversion layer and including two thin film transistors; a first terminal supplying a high-potential power supply voltage; a second terminal supplying a low-potential power supply voltage; an electrode electrically connecting the two thin film transistors and the photoelectric conversion layer; a first wiring electrically connecting the first terminal and a first thin film transistor which is one of the two thin film transistors; and a second wiring electrically connecting the second terminal and a second thin film transistor which is the other of the two thin film transistors. In the semiconductor device, the value of voltage drop of the first wiring and the second wiring are increased by bending the first wiring and the second wiring.
摘要翻译：本发明涉及一种包括光电转换层的半导体器件; 放大电路，放大光电转换层的输出电流并包括两个薄膜晶体管; 提供高电位电源电压的第一端子; 提供低电位电源电压的第二端子; 电连接两个薄膜晶体管和光电转换层的电极; 电连接第一端子和作为两个薄膜晶体管之一的第一薄膜晶体管的第一布线; 以及将第二端子和作为两个薄膜晶体管中的另一个的第二薄膜晶体管电连接的第二布线。在半导体装置中，通过弯曲第一布线和第二布线来增加第一布线和第二布线的电压降的值。

50. 发明授权

US08174047B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08174047B2
公开(公告)日：2012-05-08
申请号：US12495963
申请日：2009-07-01
申请人： Osamu Fukuoka , Masahiko Hayakawa , Hideaki Shishido
发明人： Osamu Fukuoka , Masahiko Hayakawa , Hideaki Shishido
IPC分类号： H01L29/66
CPC分类号： H01L27/1262 , H01L27/0255 , H01L27/12 , H01L27/1214 , H01L27/1277
摘要： To improve the performance of a protection circuit including a diode formed using a semiconductor film. A protection circuit is inserted between two input/output terminals. The protection circuit includes a diode which is formed over an insulating surface and is formed using a semiconductor film. Contact holes for connecting an n-type impurity region and a p-type impurity region of the diode to a first conductive film in the protection circuit are distributed over the entire impurity regions. Further, contact holes for connecting the first conductive film and a second conductive film in the protection circuit are dispersively formed over the semiconductor film. By forming the contact holes in this manner wiring resistance between the diode and a terminal can be reduced and the entire semiconductor film of the diode can be effectively serve as a rectifier element.
摘要翻译：提高包括使用半导体膜形成的二极管的保护电路的性能。一个保护电路插在两个输入/输出端子之间。保护电路包括形成在绝缘表面上并使用半导体膜形成的二极管。用于将二极管的n型杂质区域和p型杂质区域连接到保护电路中的第一导电膜的接触孔分布在整个杂质区域上。此外，用于连接保护电路中的第一导电膜和第二导电膜的接触孔分散地形成在半导体膜上。通过以这种方式形成接触孔，可以减小二极管和端子之间的布线电阻，并且二极管的整个半导体膜可以有效地用作整流元件。

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