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1. 发明授权

US08860081B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08860081B2
公开(公告)日：2014-10-14
申请号：US13461940
申请日：2012-05-02
申请人： Osamu Fukuoka , Masahiko Hayakawa , Hideaki Shishido
发明人： Osamu Fukuoka , Masahiko Hayakawa , Hideaki Shishido
IPC分类号： H01L29/66 , H01L27/02 , H01L27/12
CPC分类号： H01L27/1262 , H01L27/0255 , H01L27/12 , H01L27/1214 , H01L27/1277
摘要： To improve the performance of a protection circuit including a diode formed using a semiconductor film. A protection circuit is inserted between two input/output terminals. The protection circuit includes a diode which is formed over an insulating surface and is formed using a semiconductor film. Contact holes for connecting an n-type impurity region and a p-type impurity region of the diode to a first conductive film in the protection circuit are distributed over the entire impurity regions. Further, contact holes for connecting the first conductive film and a second conductive film in the protection circuit are dispersively formed over the semiconductor film. By forming the contact holes in this manner, wiring resistance between the diode and a terminal can be reduced and the entire semiconductor film of the diode can be effectively serve as a rectifier element.
摘要翻译：提高包括使用半导体膜形成的二极管的保护电路的性能。一个保护电路插在两个输入/输出端子之间。保护电路包括形成在绝缘表面上并使用半导体膜形成的二极管。用于将二极管的n型杂质区域和p型杂质区域连接到保护电路中的第一导电膜的接触孔分布在整个杂质区域上。此外，用于连接保护电路中的第一导电膜和第二导电膜的接触孔分散地形成在半导体膜上。通过以这种方式形成接触孔，可以减小二极管和端子之间的布线电阻，并且二极管的整个半导体膜可以有效地用作整流元件。

2. 发明授权

US08368145B2 Semiconductor device and electronic device 有权
标题翻译：半导体器件和电子器件
公开(公告)号：US08368145B2
公开(公告)日：2013-02-05
申请号：US12479291
申请日：2009-06-05
申请人： Osamu Fukuoka , Masahiko Hayakawa , Hideaki Shishido
发明人： Osamu Fukuoka , Masahiko Hayakawa , Hideaki Shishido
IPC分类号： H01L33/00
CPC分类号： H01L27/14692 , H01L24/06 , H01L27/14603 , H01L27/14609 , H01L27/14636 , H01L2924/12043 , H01L2924/15788 , H01L2924/00
摘要： A semiconductor device has a structure including the first semiconductor region 103 which is provided in the first terminal portion 100 and includes the first n-type impurity region 106, the first resistance region 107 provided at an inner periphery portion of the first n-type impurity region 106 in a plane view, and the first p-type impurity region 108 provided at an inner periphery portion of the first resistance region 107 in the plane view, and the second semiconductor region 104 which is provided in the second terminal portion 101 and includes the second p-type impurity region 109, the second resistance region 110 provided at an inner periphery portion of the second p-type impurity region 109 in the plane view, and the second n-type impurity region 111 provided at an inner periphery portion of the second resistance region 110 in the plane view.
摘要翻译：半导体器件具有包括设置在第一端子部分100中并包括第一n型杂质区域106的第一半导体区域103的结构，设置在第一n型杂质的内周部分的第一电阻区域107 在俯视图中设置在第一电阻区域107的内周部的第一p型杂质区域108和设置在第二端子部101中的第二半导体区域104，第二p型杂质区域109，在平面图中设置在第二p型杂质区域109的内周部分的第二电阻区域110和设置在第二p型杂质区域109的内周部分的第二n型杂质区域111 平面图中的第二电阻区域110。

3. 发明授权

US08174047B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08174047B2
公开(公告)日：2012-05-08
申请号：US12495963
申请日：2009-07-01
申请人： Osamu Fukuoka , Masahiko Hayakawa , Hideaki Shishido
发明人： Osamu Fukuoka , Masahiko Hayakawa , Hideaki Shishido
IPC分类号： H01L29/66
CPC分类号： H01L27/1262 , H01L27/0255 , H01L27/12 , H01L27/1214 , H01L27/1277
摘要： To improve the performance of a protection circuit including a diode formed using a semiconductor film. A protection circuit is inserted between two input/output terminals. The protection circuit includes a diode which is formed over an insulating surface and is formed using a semiconductor film. Contact holes for connecting an n-type impurity region and a p-type impurity region of the diode to a first conductive film in the protection circuit are distributed over the entire impurity regions. Further, contact holes for connecting the first conductive film and a second conductive film in the protection circuit are dispersively formed over the semiconductor film. By forming the contact holes in this manner wiring resistance between the diode and a terminal can be reduced and the entire semiconductor film of the diode can be effectively serve as a rectifier element.
摘要翻译：提高包括使用半导体膜形成的二极管的保护电路的性能。一个保护电路插在两个输入/输出端子之间。保护电路包括形成在绝缘表面上并使用半导体膜形成的二极管。用于将二极管的n型杂质区域和p型杂质区域连接到保护电路中的第一导电膜的接触孔分布在整个杂质区域上。此外，用于连接保护电路中的第一导电膜和第二导电膜的接触孔分散地形成在半导体膜上。通过以这种方式形成接触孔，可以减小二极管和端子之间的布线电阻，并且二极管的整个半导体膜可以有效地用作整流元件。

4. 发明授权

US09188631B2 Element substrate, inspecting method, and manufacturing method of semiconductor device 有权
标题翻译：元件基板，检查方法和半导体器件的制造方法
公开(公告)号：US09188631B2
公开(公告)日：2015-11-17
申请号：US13446614
申请日：2012-04-13
申请人： Kiyoshi Kato , Konami Izumi , Masahiko Hayakawa , Koichiro Kamata
发明人： Kiyoshi Kato , Konami Izumi , Masahiko Hayakawa , Koichiro Kamata
IPC分类号： G01R31/02 , G01R31/28 , G01R31/302 , H01L27/13
CPC分类号： G01R31/2822 , G01R31/2886 , G01R31/3025 , H01L27/13
摘要： A substrate including a semiconductor layer, where characteristics of an element can be evaluated with high reliability, and an evaluating method thereof are provided. A substrate including a semiconductor layer of the invention has a closed-loop circuit in which an antenna coil and a semiconductor element are connected in series, and a surface of an area over which the circuit is formed is covered with an insulating film. By using such a circuit, a contactless inspection can be carried out. Further, a ring oscillator can be substituted for the closed-loop circuit.
摘要翻译：提供了包括可以以高可靠性评估元件的特性的半导体层的基板及其评价方法。包括本发明的半导体层的衬底具有一个闭环电路，其中天线线圈和半导体元件串联连接，并且形成有电路的区域的表面被绝缘膜覆盖。通过使用这样的电路，可以进行非接触检查。此外，环形振荡器可以代替闭环电路。

5. 发明授权

US08737876B2 Developing unit having guide that stably supports toner cartridge 有权
标题翻译：具有稳定地支持调色剂盒的引导件的显影单元
公开(公告)号：US08737876B2
公开(公告)日：2014-05-27
申请号：US13572846
申请日：2012-08-13
申请人： Masahiko Hayakawa , Masashi Imai , Shougo Sato
发明人： Masahiko Hayakawa , Masashi Imai , Shougo Sato
IPC分类号： G03G15/04
CPC分类号： G03G15/0889 , G03G15/0844 , G03G15/0865 , G03G15/0868 , G03G15/0872 , G03G15/0875 , G03G15/0877 , G03G15/0886 , G03G15/0896 , G03G21/1647 , G03G21/1676
摘要： A developing device includes a developer cartridge and a developing unit. The developing unit includes a first guide and a second guide. The second is movable with respect to the developing frame between a first position where the second guide is in continuous with the first guide and a second position where a continuous state of the second guide with the first guide is interrupted. The developer cartridge includes a developer frame that accommodates a developer and a first guided member movable with respect to the developer frame. The first guide and the second guide at the first position guide the first guided member in the course of attaching the developer cartridge to the developing unit. When an attachment of the developer cartridge to the developing unit completes, the first guide receives the first guided member, and the second guide is at the second position.
摘要翻译：显影装置包括显影剂盒和显影单元。显影单元包括第一引导件和第二引导件。第二可相对于显影框架移动，第一位置与第一引导件连续的第一位置和第二引导件与第一引导件的连续状态被中断的第二位置。显影剂盒包括容纳显影剂的显影剂框架和相对于显影剂框架可移动的第一引导构件。在将显影剂盒附接到显影单元的过程中，第一引导件和第二引导件在第一位置处引导第一引导构件。当显影剂盒连接到显影单元完成时，第一导向件接收第一被引导构件，并且第二导向件处于第二位置。

6. 发明授权

US08676075B2 Image forming apparatus for suppressing reverse transfer of images 有权
标题翻译：用于抑制图像反向传送的图像形成装置
公开(公告)号：US08676075B2
公开(公告)日：2014-03-18
申请号：US13235322
申请日：2011-09-16
申请人： Yuichi Matsushita , Masahiko Hayakawa
发明人： Yuichi Matsushita , Masahiko Hayakawa
IPC分类号： G03G15/16 , G03G15/00 , G03G15/01
CPC分类号： G03G15/0194 , G03G15/0136
摘要： An image forming apparatus includes: a conveying belt; a first photosensitive member; and a second photosensitive member; a first transfer member; a second transfer member; a first pushing member; a second pushing member; and a changing unit, wherein the first photosensitive member is disposed on the upstream side of the second photosensitive member in a conveying direction of the transfer receiving member, and the changing unit changes the pushing force of the second transfer member that is disposed on the downstream side of the first photosensitive member in a conveying direction of the transfer receiving member.
摘要翻译：一种成像设备包括：输送带; 第一感光构件; 和第二感光构件; 第一传输部件; 第二转移构件; 第一推动部件; 第二推动构件; 以及改变单元，其中第一感光构件沿着转印接收构件的输送方向设置在第二感光构件的上游侧，并且改变单元改变设置在下游侧的第二转印构件的推动力在转印接收元件的输送方向上的第一感光元件的一侧。

7. 发明授权

US08674979B2 Driver circuit, display device including the driver circuit, and electronic device including the display device 有权
标题翻译：驱动电路，包括驱动电路的显示装置和包括显示装置的电子装置
公开(公告)号：US08674979B2
公开(公告)日：2014-03-18
申请号：US12912059
申请日：2010-10-26
申请人： Masahiko Hayakawa
发明人： Masahiko Hayakawa
IPC分类号： G06F3/041
CPC分类号： H01L27/1225 , G09G3/20 , G09G3/3674 , G09G3/3677 , G09G3/3688 , G09G2300/0426 , G09G2300/043 , G09G2310/0286 , G09G2310/0289 , G09G2310/0291 , G09G2330/021
摘要： One object is, when a thin film transistor whose channel is formed using an amorphous semiconductor is used for a driver circuit formed using only n-channel transistors or p-channel transistors, to provide a driver circuit in which the threshold voltage is compensated in accordance with the degree of change in the threshold voltage. In the driver circuit which includes a unipolar transistor including a first gate and a second gate which are disposed above and below a semiconductor layer with insulating layers provided therebetween, a first signal for controlling switching of the transistor is inputted to the first gate, a second signal for controlling a threshold voltage of the transistor is inputted to the second gate, and the second signal is controlled in accordance with a value of current consumption including a current which flows between a source and a drain of the transistor.
摘要翻译：一个目的是，当使用非晶半导体形成沟道的薄膜晶体管用于仅使用n沟道晶体管或p沟道晶体管形成的驱动电路时，提供其中阈值电压按照具有阈值电压的变化程度。在包括第一栅极和第二栅极的单极晶体管的驱动电路中，所述单极晶体管设置在其间设置有绝缘层的半导体层的上方和下方，用于控制晶体管的开关的第一信号被输入到第一栅极，第二栅极输入第二栅极用于控制晶体管的阈值电压的信号被输入到第二栅极，并且根据包括在晶体管的源极和漏极之间流动的电流的电流消耗值来控制第二信号。

8. 发明授权

US08525183B2 Semiconductor device including multiple insulating films 有权
公开(公告)号：US08525183B2
公开(公告)日：2013-09-03
申请号：US13371524
申请日：2012-02-13
申请人： Shunpei Yamazaki , Satoshi Murakami , Masahiko Hayakawa , Kiyoshi Kato , Mitsuaki Osame , Takashi Hirosure , Saishi Fujikawa
发明人： Shunpei Yamazaki , Satoshi Murakami , Masahiko Hayakawa , Kiyoshi Kato , Mitsuaki Osame , Takashi Hirosure , Saishi Fujikawa
IPC分类号： H01L29/04 , H01L29/15 , H01L31/036 , H01L29/10 , H01L31/0376 , H01L31/20 , H01L29/76 , H01L31/112 , H01L31/062 , H01L31/113 , H01L23/48 , H01L23/52 , H01L29/40
摘要： A semiconductor display device is formed including an interlayer insulating. Specifically, a TFT is formed and then a nitrogen-containing inorganic insulating film that transmits less moisture compared to organic resin film is formed so as to cover the TFT. Next, organic resin including photosensitive acrylic resin is applied and an opening is formed by partially exposing the organic resin film to light. The organic resin film where the opening is formed, is then covered with a nitrogen-containing inorganic insulating film which transmits less moisture than organic resin film does. Thereafter, the gate insulating film and the two layers of the nitrogen-containing inorganic insulating films are partially etched away in the opening of the organic resin film to expose the active layer of the TFT.

9. 发明授权

US08415669B2 Semiconductor display device 有权
标题翻译：半导体显示装置
公开(公告)号：US08415669B2
公开(公告)日：2013-04-09
申请号：US13217322
申请日：2011-08-25
申请人： Shunpei Yamazaki , Satoshi Murakami , Masahiko Hayakawa , Kiyoshi Kato , Mitsuaki Osame
发明人： Shunpei Yamazaki , Satoshi Murakami , Masahiko Hayakawa , Kiyoshi Kato , Mitsuaki Osame
IPC分类号： H01L29/786
CPC分类号： H01L27/1248 , G02F1/136227 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L27/1244 , H01L27/1255 , H01L27/13 , H01L27/3246 , H01L27/3276 , H01L33/52 , H01L51/5237 , H01L51/5253
摘要： It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic insulating film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially by etching to expose an active layer of the TFT.
摘要翻译：本发明的目的是提供一种具有层间绝缘膜的半导体显示装置，其可以在控制成膜时间的同时获得表面的平面性，并且可以控制用于除去水分的加热处理的处理时间，并且可以防止水分在层间绝缘膜中不被放电到与层间绝缘膜相邻的膜或电极。形成与有机树脂相比不容易透过水分的含氮的无机绝缘膜，以覆盖TFT。接着，在有机绝缘膜上涂布含有感光性丙烯酸树脂的有机树脂膜，将有机树脂膜部分地曝光以打开。此后，形成与有机树脂相比不容易透过水分的含有氮的无机绝缘膜，以覆盖打开的有机树脂膜。然后，在有机树脂膜的开口部分中，通过蚀刻部分地打开栅极绝缘膜和含氮的两层无机绝缘膜，以暴露TFT的有源层。

10. 发明授权

US08368072B2 Display device and method of fabricating the same 有权
公开(公告)号：US08368072B2
公开(公告)日：2013-02-05
申请号：US12183330
申请日：2008-07-31
申请人： Masahiko Hayakawa , Satoshi Murakami , Shunpei Yamazaki , Kengo Akimoto
发明人： Masahiko Hayakawa , Satoshi Murakami , Shunpei Yamazaki , Kengo Akimoto
IPC分类号： H01L29/04
CPC分类号： H01L33/44 , H01L27/12 , H01L27/1248 , H01L27/1288 , H01L29/78621 , H01L2924/0002 , H01L2924/00
摘要： To achieve promotion of stability of operational function of display device and enlargement of design margin in circuit design, in a display device including a pixel portion having a semiconductor element and a plurality of pixels provided with pixel electrodes connected to the semiconductor element on a substrate, the semiconductor element includes a photosensitive organic resin film as an interlayer insulating film, an inner wall face of a first opening portion provided at the photosensitive organic resin film is covered by a second insulating nitride film, a second opening portion provided at an inorganic insulating film is provided on an inner side of the first opening portion, the semiconductor and a wiring are connected through the first opening portion and the second opening portion and the pixel electrode is provided at a layer on a lower side of an activation layer.

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