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41. 发明授权

US07049692B2 Stacked semiconductor device 有权
标题翻译：堆叠半导体器件
公开(公告)号：US07049692B2
公开(公告)日：2006-05-23
申请号：US10763267
申请日：2004-01-26
申请人： Takao Nishimura , Kazuyuki Aiba , Akira Takashima
发明人： Takao Nishimura , Kazuyuki Aiba , Akira Takashima
IPC分类号： H01L23/02
CPC分类号： H05K1/141 , H01L23/3128 , H01L24/48 , H01L24/73 , H01L25/0657 , H01L25/105 , H01L25/16 , H01L2224/05599 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/45099 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2224/85399 , H01L2225/0651 , H01L2225/06517 , H01L2225/0652 , H01L2225/06541 , H01L2225/06555 , H01L2225/06558 , H01L2225/06568 , H01L2225/06572 , H01L2225/06586 , H01L2225/1023 , H01L2225/1058 , H01L2225/107 , H01L2924/00014 , H01L2924/15311 , H01L2924/15331 , H01L2924/181 , H01L2924/19041 , H01L2924/19105 , H05K1/023 , H05K1/144 , H05K1/145 , H05K1/16 , H05K3/3436 , H05K2201/045 , H05K2201/049 , H05K2201/10515 , H05K2201/10734 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要： A stacked semiconductor device is disclosed that has a three-dimensional structure using general-purpose semiconductor device units (semiconductor devices) that are stacked with an interposer substrate being provided between an upper device unit and a lower device unit. The upper device unit includes a semiconductor device, a first wiring substrate, and an external connection terminal. The lower device unit includes a semiconductor device, a second wiring substrate, and a connection electrode that is prepared on the upper surface of the second wiring substrate. The interposer substrate includes a circuit board, a first conductive material connecting to the connection electrode, a second conductive material formed in a form position of the external connection terminal that is electrically connected to the second conductive material, and a third conductive material for electrically connecting the first conductive material and the second conductive material.
摘要翻译：公开了一种堆叠半导体器件，其具有使用通用半导体器件单元（半导体器件）的三维结构，其中中间体衬底被堆叠设置在上部器件单元和下部器件单元之间。上部装置单元包括半导体装置，第一布线基板和外部连接端子。下部器件单元包括半导体器件，第二布线基板和准备在第二布线基板的上表面上的连接电极。插入器基板包括电路板，连接到连接电极的第一导电材料，形成在电连接到第二导电材料的外部连接端子的形状位置的第二导电材料和用于电连接的第三导电材料第一导电材料和第二导电材料。

42. 发明申请

US20050150290A1 AIR FLOW RATE MEASURING DEVICE 有权
标题翻译：空气流量测量装置
公开(公告)号：US20050150290A1
公开(公告)日：2005-07-14
申请号：US10820772
申请日：2004-04-09
申请人： Masahiro Kawai , Fumiyoshi Yonezawa , Akira Takashima , Hiroyuki Uramachi
发明人： Masahiro Kawai , Fumiyoshi Yonezawa , Akira Takashima , Hiroyuki Uramachi
IPC分类号： G01F15/02 , G01F1/684 , G01F5/00 , G01F1/68
CPC分类号： G01F5/00 , G01F1/6845
摘要： An air flow rate measuring device serves to measure a flow rate of air flowing through a main passage inside an intake pipe of an engine. A base has its one end directed axially of the main passage toward an upstream side of air flowing therein, and its other end directed toward a downstream side thereof, with a bent groove being formed in the base. A circuit module includes a support substrate and a detection element installed one surface of the support substrate for detecting the flow rate of air, the module being joined to the base in a face-to-face relation with respect to each other to form an auxiliary passage in cooperation with the groove. The detection element on the one surface of the support substrate is exposed to air in the auxiliary passage, and the other surface of the support substrate is exposed to air in the main passage.
摘要翻译：空气流量测量装置用于测量流过发动机的进气管内的主通道的空气的流量。底座的一端朝向主通道的轴向朝向其中流动的空气的上游侧，并且其另一端指向其下游侧，在基部中形成有弯曲的凹槽。电路模块包括支撑基板和安装在支撑基板的一个表面上用于检测空气流量的检测元件，该模块以相对于彼此的面对面关系连接到基座，以形成辅助与沟槽合作。支撑基板的一个表面上的检测元件暴露于辅助通道中的空气，并且支撑基板的另一个表面暴露于主通道中的空气。

43. 发明授权

US4728251A Complete swivel type backhoe vehicle 失效
标题翻译：完整的旋转式反铲车
公开(公告)号：US4728251A
公开(公告)日：1988-03-01
申请号：US15832
申请日：1987-02-18
申请人： Akira Takashima , Takafumi Wada
发明人： Akira Takashima , Takafumi Wada
IPC分类号： E02F3/32 , E02F3/34 , E02F3/38 , E02F3/42 , E02F3/96 , E02F3/28
CPC分类号： E02F3/32 , E02F3/325 , E02F3/384 , E02F3/964
摘要： A backhoe vehicle comprising an upper carriage including a driver's section and swivellable 360 degrees on a chassis, and an excavating assembly including a boom, a bucket arm and a bucket. The boom defines a first and a second bent portions so that a distal end of the boom is inclined in a direction in which the boom is lowered. An excavating assembly holder is attached to a front region of the upper carriage and adjacent a transversely mid-position of the vehicle to be pivotable on a vertical axis. The boom is connected to the holder to be pivotable on a horizontal rotary shaft. A boom cylinder for causing pivotal movements of the excavating assembly is connected at one end to the boom and at the other end selectively to a first and a second pivot members defined on the holder. The second pivot member is disposed at a lower rearward position with respect to the first pivot member. The first bent portion is defined substantially at a longitudinally mid-position of the boom, and the second bent portion is defined between the first bent portion and the rotary shaft. A distance between the rotary shaft and the second bent portion is substantially equal to a distance between the rotary shaft and the first pivot member.
摘要翻译：一种反铲车辆，包括：上部托架，其包括驾驶员部分，并且在底盘上可旋转360度;以及挖掘组件，包括吊杆，铲斗臂和铲斗。悬臂限定了第一和第二弯曲部分，使得悬臂的远端在吊杆下降的方向上倾斜。挖掘组件保持器附接到上托架的前部区域并且邻近车辆的横向中间位置，以便能够在垂直轴线上枢转。悬臂连接到支架以便在水平旋转轴上枢转。用于引起挖掘组件的枢转运动的动臂缸在一端连接到悬臂上，而在另一端连接到限定在保持器上的第一和第二枢转构件。第二枢转构件相对于第一枢转构件设置在下后方位置。第一弯曲部分基本上限定在起重臂的纵向中间位置处，并且第二弯曲部分限定在第一弯曲部分和旋转轴之间。旋转轴和第二弯曲部之间的距离基本上等于旋转轴和第一枢转构件之间的距离。

44. 发明授权

US08772751B2 Variable resistance semiconductor memory device 有权
标题翻译：可变电阻半导体存储器件
公开(公告)号：US08772751B2
公开(公告)日：2014-07-08
申请号：US13234388
申请日：2011-09-16
申请人： Akira Takashima , Daisuke Matsushita , Takashi Yamauchi , Yuuichi Kamimuta , Hidenori Miyagawa
发明人： Akira Takashima , Daisuke Matsushita , Takashi Yamauchi , Yuuichi Kamimuta , Hidenori Miyagawa
IPC分类号： H01L47/00 , H01L45/00
CPC分类号： H01L45/04 , G11C11/56 , G11C13/0002 , G11C13/0007 , G11C2213/33 , G11C2213/52 , H01L27/101 , H01L27/2409 , H01L27/2463 , H01L45/085 , H01L45/148
摘要： According to one embodiment, a memory device includes a first electrode including a crystallized SixGe1-x layer (0≦x
摘要翻译：根据一个实施例，存储器件包括包括结晶的SixGe1-x层（0和n1E; x <1）的第一电极，包括金属元件的第二电极，在第一和第二电极之间的可变电阻部分，非晶Si层，以及控制非晶Si层中的细丝的控制电路，所述灯丝包括金属元件。

45. 发明授权

US08664632B2 Memory device 有权
标题翻译：内存设备
公开(公告)号：US08664632B2
公开(公告)日：2014-03-04
申请号：US13599504
申请日：2012-08-30
申请人： Daisuke Matsushita , Shosuke Fujii , Yoshifumi Nishi , Akira Takashima , Takayuki Ishikawa , Hidenori Miyagawa , Takashi Haimoto , Yusuke Arayashiki , Hideki Inokuma
发明人： Daisuke Matsushita , Shosuke Fujii , Yoshifumi Nishi , Akira Takashima , Takayuki Ishikawa , Hidenori Miyagawa , Takashi Haimoto , Yusuke Arayashiki , Hideki Inokuma
IPC分类号： H01L47/00 , G11C11/00
CPC分类号： H01L45/1253 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/146 , H01L45/148
摘要： According to one embodiment, a memory device includes a first electrode, a second electrode, and a variable resistance film. The variable resistance film is connected between the first electrode and the second electrode. The first electrode includes a metal contained in a matrix made of a conductive material. A cohesive energy of the metal is lower than a cohesive energy of the conductive material. A concentration of the metal at a central portion of the first electrode in a width direction thereof is higher than concentrations of the metal in two end portions of the first electrode in the width direction.
摘要翻译：根据一个实施例，存储器件包括第一电极，第二电极和可变电阻膜。可变电阻膜连接在第一电极和第二电极之间。第一电极包括由导电材料制成的基体中所含的金属。金属的内聚能低于导电材料的内聚能。第一电极的宽度方向的中央部的金属浓度高于第一电极的宽度方向的两端部的金属的浓度。

46. 发明授权

US08558301B2 Semiconductor device, and method for manufacturing semiconductor device 失效
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US08558301B2
公开(公告)日：2013-10-15
申请号：US13208454
申请日：2011-08-12
申请人： Masao Shingu , Akira Takashima , Koichi Muraoka
发明人： Masao Shingu , Akira Takashima , Koichi Muraoka
IPC分类号： H01L29/76
CPC分类号： H01L29/788 , H01L21/28273 , H01L21/28282 , H01L27/11521 , H01L27/11568 , H01L29/42324 , H01L29/4234 , H01L29/513 , H01L29/66825
摘要： There is provided a semiconductor device in which degradation of reliability originating in the interface between an upper insulating layer and an element isolation insulating layer is suppressed. The semiconductor device includes: a semiconductor region; a plurality of stacked structures each of which is disposed on the semiconductor region and has a tunnel insulating film, a charge storage layer, an upper insulating layer, and a control electrode stacked sequentially; an element isolation insulating layer disposed on side faces of the plurality of stacked structures; and a source-drain region disposed on the semiconductor region and among the plurality of stacked structures. The element isolation insulating layer includes at least one of SiO2, SiN, and SiON, the upper insulating layer is an oxide containing at least one metal M selected from the group consisting of a rare earth metal, Y, Zr, and Hf, and Si, and respective lengths Lcharge, Ltop, and Lgate of the charge storage layer, the upper insulating layer, and the control electrode in a channel length direction satisfy the relation “Lcharge
摘要翻译：提供一种半导体器件，其中抑制源于上绝缘层和元件隔离绝缘层之间的界面的可靠性的劣化。半导体器件包括：半导体区域; 多个堆叠结构，其各自设置在所述半导体区域上，并且具有依次堆叠的隧道绝缘膜，电荷存储层，上绝缘层和控制电极; 设置在所述多个堆叠结构的侧面上的元件隔离绝缘层; 以及设置在半导体区域和多个堆叠结构中的源极 - 漏极区域。元件隔离绝缘层包括SiO 2，SiN和SiON中的至少一种，上绝缘层是含有选自稀土金属，Y，Zr和Hf中的至少一种金属M的氧化物，Si ，并且沟道长度方向上的电荷存储层，上绝缘层和控制电极的各自的长度Lcharge，Ltop和Lgate满足关系“Lcharge

47. 发明授权

US08355275B2 Resistance change memory 有权
标题翻译：电阻变化记忆
公开(公告)号：US08355275B2
公开(公告)日：2013-01-15
申请号：US13239899
申请日：2011-09-22
申请人： Reika Ichihara , Akira Takashima
发明人： Reika Ichihara , Akira Takashima
IPC分类号： G11C11/00
CPC分类号： G11C13/0007 , G11C13/003 , G11C2213/76
摘要： According to one embodiment, a resistance change memory includes a memory cell including a resistance change element and a stacked layer structure which are connected in series, a control circuit configured to control a first operation of changing the resistance change element from a first resistance value to a second resistance value lower than the first resistance value, and a voltage pulse generating circuit configured to generate a first voltage pulse to be applied to the memory cell in the first operation. The stacked layer structure includes two conductive layers and an insulating layer formed between the two conductive layers. Amplitude of the first voltage pulse is in a first voltage area in which the stacked layer structure functions as a capacitor. The first voltage pulse satisfies Ron×C
摘要翻译：根据一个实施例，电阻变化存储器包括：串联连接的包括电阻变化元件和堆叠层结构的存储单元;控制电路，被配置为控制将电阻变化元件从第一电阻值改变到第二电阻值低于第一电阻值;以及电压脉冲发生电路，被配置为在第一操作中产生要施加到存储单元的第一电压脉冲。堆叠层结构包括两个导电层和形成在两个导电层之间的绝缘层。第一电压脉冲的振幅在第一电压区域中，其中堆叠层结构用作电容器。第一电压脉冲满足Ron×C

48. 发明授权

US08112872B2 Method of manufacturing a coil component 有权
标题翻译：线圈部件的制造方法
公开(公告)号：US08112872B2
公开(公告)日：2012-02-14
申请号：US12213749
申请日：2008-06-24
申请人： Shinichi Sato , Satoshi Kurimoto , Makoto Morita , Akira Takashima , Sumio Takahashi , Yoshiaki Kitajima
发明人： Shinichi Sato , Satoshi Kurimoto , Makoto Morita , Akira Takashima , Sumio Takahashi , Yoshiaki Kitajima
IPC分类号： H01F7/128 , H01F7/127
CPC分类号： H01F17/045 , H01F27/027 , H01F27/292 , H01F27/327 , H01F2027/065 , Y10T29/4902 , Y10T29/49071 , Y10T29/49073 , Y10T29/49174
摘要： A coil component having an easily discernible orientation, and a method of producing such a coil component that facilitates the injection of resin. A coil component includes a core with a winding portion, first and second flanges disposed on either end of the winding portion, and a winding accommodating region defined by the winding portion and the first and second flanges, terminal electrodes disposed on the second flange and a winding wound about the winding portion and connected to the terminal electrodes. An insulating resin is formed over the winding at the winding accommodating region. A marker made from a material the same as the insulating resin is provided at outer peripheral surface of the flanges.
摘要翻译：具有容易识别的取向的线圈部件，以及制造有助于树脂注入的这种线圈部件的方法。线圈部件包括具有绕组部分的芯部，布置在绕组部分的任一端上的第一和第二凸缘以及由绕组部分和第一和第二凸缘限定的绕组容纳区域，设置在第二凸缘上的端子电极和缠绕在绕组部分上并连接到端子电极。在卷绕容纳区域的绕组上形成绝缘树脂。由与绝缘树脂相同的材料制成的标记设置在凸缘的外周面上。

49. 发明授权

US08012315B2 Lanthanoid aluminate film fabrication method 有权
标题翻译：镧系铝酸盐薄膜的制造方法
公开(公告)号：US08012315B2
公开(公告)日：2011-09-06
申请号：US11966304
申请日：2007-12-28
申请人： Tsunehiro Ino , Akira Takashima
发明人： Tsunehiro Ino , Akira Takashima
IPC分类号： C23C14/35
CPC分类号： C23C14/3464 , C23C14/08
摘要： A method of fabricating by co-sputtering deposition a lanthanoid aluminate film with enhanced electrical insulativity owing to suppression of deviation in composition of the film is disclosed. Firstly within a vacuum chamber, hold two separate targets, one of which is made of lanthanoid aluminate (LnAlO3) and the other of which is made of aluminum oxide (Al2O3). Then, transport and load a substrate into the vacuum chamber. Next, introduce a chosen sputtering gas into this chamber. Thereafter, perform sputtering of both the targets at a time to thereby form a lanthanoid aluminate film on the substrate surface. This film is well adaptable for use as ultra-thin high dielectric constant (high-k) gate dielectrics in highly miniaturized metal oxide semiconductor (MOS) transistors.
摘要翻译：公开了一种通过共溅射沉积制造具有增强的电绝缘性的镧系铝酸盐膜的方法，这是因为抑制了膜的组成偏差。首先在真空室内保持两个独立的靶，其中一个靶由铝酸镧（LnAlO3）制成，另一个由氧化铝（Al2O3）制成。然后，将基板输送并加载到真空室中。接下来，将选择的溅射气体引入该室。此后，一次进行两个靶的溅射，从而在基板表面上形成镧系铝酸盐膜。该薄膜适用于高度小型化的金属氧化物半导体（MOS）晶体管中的超薄高介电常数（高k）栅极电介质。

50. 发明授权

US07902588B2 Nonvolatile semiconductor memory device and method for manufacturing the same 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US07902588B2
公开(公告)日：2011-03-08
申请号：US11846251
申请日：2007-08-28
申请人： Yukie Nishikawa , Akira Takashima , Koichi Muraoka
发明人： Yukie Nishikawa , Akira Takashima , Koichi Muraoka
IPC分类号： H01L29/788
CPC分类号： H01L29/7881 , H01L27/115 , H01L27/11521 , H01L29/42336 , H01L29/513
摘要： A nonvolatile semiconductor memory device includes: a tunneling insulating film; a floating gate electrode; an inter-electrode insulating film, in which an interface facing the floating gate electrode and an interface facing a control gate electrode are defined as the first interface and the second interface, respectively; and a control gate electrode. The inter-electrode insulating film includes one or more first elements selected from rare earth elements, one or more second elements selected from Al, Ti, Zr, Hf, Ta, Mg, Ca, Sr and Ba, and oxygen. A composition ratio of the first element, which is defined as the number of atoms of the first element divided by that of the second element, is changed between the first interface and the second interface, and the composition ratio in the vicinity of the first interface is lower than that in the vicinity of the second interface.
摘要翻译：非易失性半导体存储器件包括：隧道绝缘膜; 浮栅电极; 分别将面对浮置栅极的界面和面对控制栅电极的界面分别定义为第一界面和第二界面的电极间绝缘膜; 和控制栅电极。电极间绝缘膜包括选自稀土元素，选自Al，Ti，Zr，Hf，Ta，Mg，Ca，Sr和Ba中的一种或多种第二元素和氧的一种或多种第一元素。被定义为第一元素的原子数除以第二元素的原子数的第一元素的组成比在第一界面和第二界面之间改变，并且第一界面附近的组成比低于第二界面附近的位置。

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