专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明申请

US20110150020A1 II-VI MQW VSCEL ON A HEAT SINK OPTICALLY PUMPED BY A GAN LD 失效
标题翻译： II-VI MQW VSCEL在由GAN LD光电泵浦的散热器上
公开(公告)号：US20110150020A1
公开(公告)日：2011-06-23
申请号：US13060554
申请日：2009-08-18
申请人： Michael A. Haase , Thomas J. Miller , Xiaoguang Sun
发明人： Michael A. Haase , Thomas J. Miller , Xiaoguang Sun
IPC分类号： H01S5/347 , H01S5/183 , H01S5/187
CPC分类号： H01S5/041 , B82Y20/00 , H01S5/0215 , H01S5/0217 , H01S5/024 , H01S5/1039 , H01S5/14 , H01S5/18308 , H01S5/2009 , H01S5/2022 , H01S5/2027 , H01S5/309 , H01S5/347 , H01S5/423 , H01S2301/18
摘要： Light sources are disclosed. A disclosed light source includes a III-V based pump light source (170) that includes nitrogen and emits light at a first wavelength. The light source further includes a vertical cavity surface emitting laser (VCSEL) that converts at least a portion of the first wavelength light (174) emitted by the pump light source (170) to at least a partially coherent light at a second wavelength (176). The VCSEL includes first and second mirrors (120, 160) that form an optical cavity for light at the second wavelength. The first mirror (120) is substantially reflective at the second wavelength and includes a first multilayer stack. The second mirror (160) is substantially transmissive at the first wavelength and partially reflective and partially transmissive and the second wavelength. The second mirror includes a second multilayer stack. The VCSEL further includes a semiconductor multilayer stack (130) that is disposed between the first and second mirrors and converts at least a portion of the first wavelength light to the second wavelength light. The semiconductor multilayer stack (130) includes a quantum well that includes a Cd(Mg)ZnSe alloy.
摘要翻译：公开了光源。所公开的光源包括包含氮并发射第一波长的光的基于III-V的泵浦光源（170）。光源还包括垂直腔表面发射激光器（VCSEL），其将由泵浦光源（170）发射的第一波长光（174）的至少一部分转换成第二波长的至少部分相干光（176 ）。 VCSEL包括为第二波长的光形成光腔的第一和第二反射镜（120,160）。第一反射镜（120）在第二波长处基本上是反射性的并且包括第一多层叠层。第二反射镜（160）在第一波长处基本上是透射的，并且在第二波长处是部分反射和部分透射的。第二反射镜包括第二多层叠层。 VCSEL还包括设置在第一和第二反射镜之间并将第一波长光的至少一部分转换成第二波长光的半导体多层堆叠（130）。半导体多层堆叠（130）包括包含Cd（Mg）ZnSe合金的量子阱。

42. 发明申请

US20110101403A1 SEMICONDUCTOR LIGHT CONVERTING CONSTRUCTION 有权
标题翻译：半导体光转换结构
公开(公告)号：US20110101403A1
公开(公告)日：2011-05-05
申请号：US13000598
申请日：2009-06-01
申请人： Michael A. Haase , Jun-Ying Zhang , Thomas J. Miller
发明人： Michael A. Haase , Jun-Ying Zhang , Thomas J. Miller
IPC分类号： H01L33/00 , G02F2/02
CPC分类号： H01L25/0756 , H01L27/14603 , H01L27/14609 , H01L31/1013 , H01L33/44 , H01L33/50 , H01L51/5036 , H01L51/5262 , H01L2924/0002 , H01L2924/09701 , H01L2933/0091 , H01L2924/00
摘要： Semiconductor light converting constructions are disclosed. The semiconductor light converting construction includes a first semiconductor layer for absorbing at least a portion of light at a first wavelength; a semiconductor potential well for converting at least a portion of the light absorbed at the first wavelength to light at a longer second wavelength; and a second semiconductor layer that is capable of absorbing at least a portion of light at the first wavelength. The first semiconductor layer has a maximum first index of refraction at the second wavelength. The second semiconductor layer has a second index of refraction at the second wavelength that is greater than the maximum first index of refraction.
摘要翻译：公开了半导体光转换结构。半导体光转换结构包括用于吸收第一波长的至少一部分光的第一半导体层; 用于将在第一波长处吸收的光的至少一部分转换成更长的第二波长的光的半导体势阱; 以及能够吸收第一波长的至少一部分光的第二半导体层。第一半导体层在第二波长处具有最大的第一折射率。第二半导体层在第二波长处具有大于最大第一折射率的第二折射率。

43. 发明授权

US07902542B2 Adapted LED device with re-emitting semiconductor construction 有权
标题翻译：适应LED发光二极管装置
公开(公告)号：US07902542B2
公开(公告)日：2011-03-08
申请号：US11755010
申请日：2007-05-30
申请人： Michael A. Haase , Catherine A. Leatherdale , Thomas J. Miller , Andrew J. Ouderkirk
发明人： Michael A. Haase , Catherine A. Leatherdale , Thomas J. Miller , Andrew J. Ouderkirk
IPC分类号： H01L29/06
CPC分类号： H01L33/08 , G02F1/133603 , H01L33/502
摘要： An article includes an LED that has an emitting surface. A reemitting semiconductor structure has an emitting surface and converts light emitted by the LED to light of a different wavelength. At least one of the emitting surfaces frustrates total internal reflection.
摘要翻译：一种物品包括具有发射表面的LED。再发射半导体结构具有发光面，将由LED发射的光转换为不同波长的光。至少一个发射表面使整个内部反射受阻。

44. 发明授权

US07737430B2 Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission 失效
公开(公告)号：US07737430B2
公开(公告)日：2010-06-15
申请号：US11553784
申请日：2006-10-27
申请人： Thomas J. Miller , Michael A. Haase , Terry L. Smith , Xiaoguang Sun
发明人： Thomas J. Miller , Michael A. Haase , Terry L. Smith , Xiaoguang Sun
IPC分类号： H01L29/06
CPC分类号： H01L33/08 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/14 , H01L2224/05541 , H01L2224/05005
摘要： An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.

45. 发明授权

US5818859A Be-containing II-VI blue-green laser diodes 失效
标题翻译：含有II-VI蓝绿色激光二极管
公开(公告)号：US5818859A
公开(公告)日：1998-10-06
申请号：US726618
申请日：1996-10-07
申请人： Thomas J. Miller , Michael A. Haase , Paul F. Baude , Michael D. Pashley
发明人： Thomas J. Miller , Michael A. Haase , Paul F. Baude , Michael D. Pashley
IPC分类号： H01S5/00 , H01S5/32 , H01S5/327 , H01S5/34 , H01S5/347 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/347 , H01S2304/02 , H01S5/327 , H01S5/3409
摘要： A II-VI compound semiconductor laser diode includes a plurality of II-VI semiconductor layers forming a pn junction supported by a single crystal GaAs semiconductor substrate. The layers formed in the pn junction include a first cladding layer of a first conductivity type, a second cladding layer of a second conductivity type, and at least a first guiding layer between the first and second cladding layers. A quantum well active layer is positioned within the pn junction. Electrical energy is coupled to the laser diode by first and second electrodes. Various layers in the laser diode are formed using Be.
摘要翻译： II-VI化合物半导体激光二极管包括形成由单晶GaAs半导体衬底支撑的pn结的多个II-VI半导体层。形成在pn结中的层包括第一导电类型的第一包层，第二导电类型的第二包层和在第一和第二包层之间的至少第一引导层。量子阱活性层位于pn结内。电能通过第一和第二电极耦合到激光二极管。使用Be形成激光二极管中的各个层。

46. 发明授权

US08629611B2 White light electroluminescent devices with adjustable color temperature 有权
标题翻译：具有可调色温的白光电致发光器件
公开(公告)号：US08629611B2
公开(公告)日：2014-01-14
申请号：US13379895
申请日：2010-06-25
申请人： Michael A. Haase
发明人： Michael A. Haase
IPC分类号： H01J1/62
CPC分类号： H05B33/0821 , H01L25/0753 , H01L33/08 , H01L33/20 , H01L33/38 , H01L33/504 , H01L2224/45139 , H01L2224/48091 , H01L2224/48465 , H05B33/0857 , H01L2924/00014 , H01L2924/00 , H01L2924/00011
摘要： Solid state lighting devices include a first luminescent element (612) emitting light having a first spectrum, and a second luminescent element (614) emitting light having a second spectrum. The first luminescent element includes a first electroluminescent element (612a) that emits a first pump light, and a first light converting element (612b) that converts at least some of the first pump light to a first re-emitted light component. The second luminescent element includes a second electroluminescent element (614a) that emits a second pump light, and a second light converting element (614b) that converts at least some second pump light to a second re-emitted light component. The first and/or second light converting element includes a potential well. Light emitted by the first and second luminescent elements combine to provide a device output, which can approximate a Planckian locus over a range of color temperatures and exhibit a color rendering index of at least 60, 70, or 80.
摘要翻译：固体照明装置包括发射具有第一光谱的光的第一发光元件（612）和发射具有第二光谱的光的第二发光元件（614）。第一发光元件包括发射第一泵浦光的第一电致发光元件（612a）和将第一泵浦光中的至少一些转换成第一再发射光分量的第一光转换元件（612b）。第二发光元件包括发射第二泵浦光的第二电致发光元件（614a）和将至少一些第二泵浦光转换成第二再发射光分量的第二光转换元件（614b）。第一和/或第二光转换元件包括势阱。由第一和第二发光元件发射的光组合在一起，以提供器件输出，其可以在一定范围的色温范围内接近普朗克斯轨迹，并显示至少60,70或80的显色指数。

47. 发明授权

US08486593B2 Roll-to-roll digital photolithography 有权
标题翻译：卷对卷数字光刻
公开(公告)号：US08486593B2
公开(公告)日：2013-07-16
申请号：US13141108
申请日：2009-12-17
申请人： Michael A. Haase , Jeffrey H. Tokie , Daniel J. Theis , Brian K. Nelson
发明人： Michael A. Haase , Jeffrey H. Tokie , Daniel J. Theis , Brian K. Nelson
IPC分类号： G03F9/00
CPC分类号： G03F7/70516 , G03F7/22 , G03F7/70791 , G03F9/7003 , H05K1/0269 , H05K1/0393 , H05K3/0008 , H05K3/0082 , H05K2201/09918 , H05K2203/1545 , H05K2203/163 , H05K2203/166
摘要： Methods of making flexible circuit films include providing a polymer film or other flexible substrate having a plurality of alignment marks and a photosensitive material thereon. The substrate passes around a suitable roller, belt, or other inelastic conveyor such that the substrate and the conveyor move together at least from a first location to a second location. Positions of a first set of the alignment marks on a first portion of the substrate are measured when such portion is at the first location, and the measured positions can be used to calculate a distortion of the substrate. The photosensitive material is then patternwise exposed when the first portion of the substrate has moved to the second location. The patternwise exposing is based on the measured positions of the first set of alignment marks, and may include exposing the web with a distortion-adjusted pattern. Related systems and articles are also disclosed.
摘要翻译：制造柔性电路膜的方法包括提供具有多个对准标记的聚合物膜或其它柔性基板和其上的感光材料。衬底绕合适的辊，带或其它非弹性输送机穿过，使得衬底和输送器至少从第一位置到第二位置一起移动。当这些部分处于第一位置时，测量第一组对准标记在基板的第一部分上的位置，并且可以使用测量位置来计算基板的变形。当基片的第一部分移动到第二位置时，感光材料然后以图形方式露出。图案曝光基于第一组对准标记的测量位置，并且可以包括用变形调整图案曝光幅材。还公开了相关系统和物品。

48. 发明申请

US20120091882A1 ELECTROLUMINESCENT DEVICES WITH COLOR ADJUSTMENT BASED ON CURRENT CROWDING 有权
标题翻译：基于电流冲击的彩色调整的电致发光器件
公开(公告)号：US20120091882A1
公开(公告)日：2012-04-19
申请号：US13379933
申请日：2010-06-25
申请人： Michael A. Haase
发明人： Michael A. Haase
IPC分类号： H05B33/12
CPC分类号： H01L33/08 , H01L33/38 , H01L33/502 , H01L2224/48091 , H01L2224/48465 , H01L2924/00014 , H01L2924/00
摘要： A lighting system provides a system optical output, such as white light, as a function of an applied electrical signal. The system output can be characterized by a color temperature or other measure that represents the color or output spectrum of the output. The system is designed so that the color temperature changes as a function of the applied electrical signal. The changes in color temperature are at least in part a result of a phenomenon known as “current crowding”.
摘要翻译：照明系统根据所施加的电信号提供诸如白光的系统光输出。系统输出可以通过色温或其他表示输出的颜色或输出光谱的度量来表征。该系统被设计成使得色温根据所施加的电信号而变化。色温的变化至少部分是被称为“当前拥挤”的现象的结果。

49. 发明申请

US20110150019A1 MONOCHROMATIC LIGHT SOURCE 有权
标题翻译：单色光源
公开(公告)号：US20110150019A1
公开(公告)日：2011-06-23
申请号：US13060643
申请日：2009-07-28
申请人： Catherine A. Leatherdale , Michael A. Haase
发明人： Catherine A. Leatherdale , Michael A. Haase
IPC分类号： H01S5/347 , H01L33/00
CPC分类号： H01S5/041 , H01S5/02476 , H01S5/183 , H01S5/423
摘要： Light emitting systems are disclosed. The light emitting system includes an electroluminescent device that emits light at a first wavelength. The light emitting system further includes an optical cavity that enhances emission of light from a top surface of the light emitting system and suppresses emission of light from one or more sides of the light emitting system. The optical cavity includes a semiconductor multilayer stack that receives the emitted first wavelength light and converts at least a portion of the received light to light of a second wavelength. The semiconductor multilayer stack includes a II-VI potential well. The integrated emission intensity of all light at the second wavelength that exit the light emitting system is at least 10 times the integrated emission intensity of all light at the first wavelength that exit the light emitting system.
摘要翻译：公开了发光系统。发光系统包括发射第一波长的光的电致发光器件。发光系统还包括光腔，其增强来自发光系统的顶表面的光的发射并抑制来自发光系统的一个或多个侧面的光的发射。光腔包括半导体多层堆叠，其接收所发射的第一波长光，并将接收到的光的至少一部分转换成第二波长的光。半导体多层堆叠包括II-VI势阱。离开发光系统的第二波长的所有光的集成发射强度是离开发光系统的第一波长的所有光的集成发射强度的至少10倍。

50. 发明申请

US20110117686A1 METHOD OF FABRICATING LIGHT EXTRACTOR 有权
标题翻译：制造光提取物的方法
公开(公告)号：US20110117686A1
公开(公告)日：2011-05-19
申请号：US13000604
申请日：2009-06-03
申请人： Jun-Ying Zhang , Michael A. Haase , Terry L. Smith
发明人： Jun-Ying Zhang , Michael A. Haase , Terry L. Smith
IPC分类号： H01L33/44
CPC分类号： H01L33/44 , H01L33/08 , H01L33/502 , H01L2933/0091
摘要： Methods of fabricating light extractors are disclosed. The method of fabricating an optical construction for extracting light from a substrate includes the steps of: (a) providing a substrate that has a surface; (b) disposing a plurality of structures on the surface of the substrate, where the plurality of structures form open areas that expose the surface of the substrate; (c) shrinking at least some of the structures; and (d) applying an overcoat to cover the shrunk structures and the surface of the substrate in the open areas.
摘要翻译：公开了提取光的方法。制造用于从衬底提取光的光学结构的方法包括以下步骤：（a）提供具有表面的衬底; （b）在所述基板的表面上设置多个结构，其中所述多个结构形成暴露所述基板的表面的敞开区域; （c）收缩至少一些结构物; 和（d）施加外涂层以覆盖开放区域中的收缩结构和基底表面。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式