专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明申请

US20090050153A1 TUBE SYSTEM FOR VENTILATION APPLIANCES 有权
标题翻译：用于通风设备的管道系统
公开(公告)号：US20090050153A1
公开(公告)日：2009-02-26
申请号：US12097734
申请日：2006-11-09
申请人： Josef Brunner
发明人： Josef Brunner
IPC分类号： A61M16/00
CPC分类号： A61M16/08 , A61M16/024 , A61M16/06 , A61M16/0833 , A61M16/107 , A61M16/16 , A61M16/204 , A61M16/205 , A61M2016/0036 , A61M2205/15
摘要： The invention relates to a three-arm tube system (11) for a ventilation appliance (13) suitable for invasive ventilation. Such a ventilation appliance comprises an active inhalation valve and an active exhalation valve (29). The tube system (11) comprises an inhalation tube arm (17), an exhalation tube arm (27) and a ventilation tube arm (37) for attachment to a mask (57), and also a flow sensor (23). According to the invention, a defined leakage (39) is established in the ventilation tube (37), and the flow sensor (23) is arranged between leakage (39) and mask (57). The invention further relates to a ventilation appliance having such a tube system, and to a method for operating a ventilation appliance.
摘要翻译：本发明涉及一种适用于有创通气的通风器具（13）的三臂管系统（11）。这种通气装置包括主动吸入阀和主动呼气阀（29）。管系统（11）包括用于附接到掩模（57）的吸入管臂（17），呼气管臂（27）和通气管臂（37），以及流量传感器（23）。根据本发明，在通风管（37）中建立了限定的泄漏（39），并且流量传感器（23）设置在泄漏（39）和掩模（57）之间。本发明还涉及具有这种管系统的通风设备以及用于操作通风设备的方法。

42. 发明申请

US20090007915A1 APPARATUS FOR REGULATING A MECHANICAL VENTILATION 有权
标题翻译：用于调节机械通风的装置
公开(公告)号：US20090007915A1
公开(公告)日：2009-01-08
申请号：US12162781
申请日：2007-01-30
申请人： Josef Brunner , Marc Wysocki , Thomas Laubscher
发明人： Josef Brunner , Marc Wysocki , Thomas Laubscher
IPC分类号： A61M16/00
CPC分类号： A61M16/0051 , A61M16/024 , A61M2230/202 , A61M2230/205 , A61M2230/005
摘要： The invention relates to a device, with which one is to prevent a patient who breathes on Ms own and who desires a lower CO2-partial-pressure than is achieved by the set Ventilation from tiring. It comprises the following means for the regulation of a changing intensity of a mechanical Ventilation: • means for determining a target frequency RRsp, • means for determining a spontaneous frequency RRspont • means for comparing the spontaneous frequency RRspont with the target frequency RRsp. wherein adapting a Ventilation target value (% MinVol, V′gAsp) on account of the result of the comparison of the spontaneous frequency RRspont with the target frequency RRsp and • means for adapting the parameters determining the intensity of the Ventilation, on account of the Ventilation target value (% MinVol, V′gAsp). This so-called pump support System (PSS) is activated (PSS on) when the patient breathes in an adequately spontaneous manner (Criterion 1). With an insufficient individual activity of the patient, his behaviour is taken as a basis for the control of the regulation. The control or regulation of the Ventilation is assumed by a fixed setting of a Ventilation target value (% MinVol), or a CO2-controller, as soon as the patient breathes in a manner which is not spontaneous enough.
摘要翻译：本发明涉及一种装置，其中一种是防止呼吸自己的患者，并且希望比通过设定的通气达到的较低的二氧化碳分压比疲劳。它包括以下用于调节机械通气变化强度的方法：。用于确定目标频率RRsp的手段。用于确定自发频率RRspont的方法。用于将自发频率RRspont与目标频率RRsp进行比较的手段。其中根据自发频率RRspont与目标频率RRsp的比较的结果来适配通气目标值（％MinVol，V'gAsp）。考虑到通气目标值（％MinVol，V'gAsp），适应决定通气强度的参数的方法。当患者以充分自发的方式呼吸时，所谓的泵支持系统（PSS）被激活（PSS on）（标准1）。患者的个人活动不足，他的行为被视为控制监管的依据。只要患者以不足够自发的方式呼吸，就可以通过通气目标值（％MinVol）或二氧化碳控制器的固定设置来控制或调节通气。

43. 发明申请

US20050139961A1 Semiconductor substrate and method for production thereof 审中-公开
标题翻译：半导体基板及其制造方法
公开(公告)号：US20050139961A1
公开(公告)日：2005-06-30
申请号：US11012935
申请日：2004-12-15
申请人： Josef Brunner , Hiroyuki Deai , Atsushi Ikari , Martin Grassl , Atsuki Matsumura , Wilfried Ammon
发明人： Josef Brunner , Hiroyuki Deai , Atsushi Ikari , Martin Grassl , Atsuki Matsumura , Wilfried Ammon
IPC分类号： H01L21/76 , H01L21/02 , H01L21/20 , H01L21/265 , H01L21/316 , H01L21/762 , H01L27/12 , H01L29/165 , H01L29/786 , H01L29/06
CPC分类号： H01L21/26533 , H01L21/02126 , H01L21/02236 , H01L21/02238 , H01L21/02255 , H01L21/02299 , H01L21/02323 , H01L21/02351 , H01L21/31658 , H01L21/76243 , H01L21/76256
摘要： Hetero-semiconductor structures possessing an SOI structure containing a silicon-germanium mixed crystal are produced at a low cost and high productivity. The semiconductor substrates comprise a first layer formed of silicon having germanium added thereto, a second layer formed of an oxide and adjoined to the first layer, and a third layer derived from the same source as the first layer, but having an enriched content of germanium as a result of thermal oxidation and thinning of the third layer.
摘要翻译：以低成本和高生产率生产具有含硅锗混合晶体的SOI结构的异质半导体结构。半导体衬底包括由添加有锗的硅形成的第一层，由氧化物形成并与第一层相邻的第二层，以及源自与第一层相同的源但具有富锗含量的锗的第三层作为第三层的热氧化和变薄的结果。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式