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    • 41. 发明授权
    • In-line detector system for real-time determination of impurity
concentration in a flowing gas stream
    • 用于实时确定流动气流中污染浓度的在线检测系统
    • US5138869A
    • 1992-08-18
    • US628490
    • 1990-12-14
    • Glenn M. Tom
    • Glenn M. Tom
    • G01N9/00G01N29/02G01N33/00
    • G01N33/0026
    • An in-line detector system for real-time detection of impurity concentration in a flowing gas stream in which purified and unpurified volumes of gas from the flowing gas stream are subjected to concentration sensing, to determine a corrected impurity concentration value for the flowing gas stream. The system in a preferred embodiment employs a manifold in flow communication with a purifier unit, a main flow conduit through which the flowing gas stream is passed, and a sensor port, with a selectively positionable valve to flow gas through a purifier loop of the manifold to the sensing port, and alternately through a bypass loop of the manifold without passage through the purifier unit, for comparative impurity sensing of gas in the respective loops. The system may utilize hygrometric sensors in the case of water as a critical impurity, or surface acoustical wave (SAW) devices coated with suitable impurity-affinity coatings. The system has particular utility in monitoring low impurity concentration levels (e.g., from about 0.1 ppm to about 100 ppm) in gas streams employed in vapor-phase processes such as chemical vapor deposition in the manufacture of semiconductor devices.
    • 一种在线检测器系统,用于实时检测流动气流中的杂质浓度,其中来自流动气流的净化和未纯化体积的气体经受浓度感测,以确定流动气流的校正杂质浓度值 。 在优选实施例中的系统采用与净化器单元流动连通的歧管,通过流动气流的主流管和传感器端口,其具有可选择性定位的阀,以使气体流过歧管的净化器回路 并且通过歧管的旁路回路而不通过净化器单元,用于比较杂质检测各回路中的气体。 在水作为关键杂质的情况下,该系统可以使用湿度传感器,或者涂覆有合适的杂质亲和性涂层的表面声波(SAW)装置。 该系统在用于半导体器件制造中的气相法(例如化学气相沉积)中所用的气流中的低杂质浓度水平(例如约0.1ppm至约100ppm)具有特别的用途。
    • 42. 发明授权
    • Dopant delivery system for semiconductor manufacture
    • 用于半导体制造的掺杂剂输送系统
    • US4936877A
    • 1990-06-26
    • US381583
    • 1989-07-18
    • Steven J. HultquistGlenn M. Tom
    • Steven J. HultquistGlenn M. Tom
    • B01D53/22C30B25/14
    • C23C16/45561B01D53/22C30B25/14
    • A gas delivery system for supplying a vapor phase constituent at low concentration in a carrier gas, wherein the carrier gas is flowed through a contacting zone in which is disposed a permeable film through which the vapor phase constituent permeates into the contacing zone, to yield a product gas mixture comprising the vapor phase constituent and the carrier gas. In a particularly preferred embodiment, concentration of the vapor phase constituent in the product gas mixture is sensed, e.g., by a surface acoustical wave (SAW) concentration sensor device, and the concentration sensing is employed to controllably adjust the flow rate of the carrier gas flowed through the contacting zone, to maintain a selected delivery rate and concentration of the vapor phase constituent in the product gas mixture. The gas delivery system of the invention has particular utility for supplying gaseous dopant source compounds such as arsine, hydrogen selenide, and/or hydrogen telluride, for fabrication of semiconducting materials and semiconductor devices.
    • 一种用于在载气中提供低浓度的气相成分的气体输送系统,其中所述载气流过其中设置有透气膜的接触区,所述渗透膜通过所述渗透膜,所述气相组分渗透到所述引导区中,以产生 产物气体混合物,其包含气相成分和载气。 在特别优选的实施方案中,例如通过表面声波(SAW)浓度传感器装置感测产物气体混合物中气相成分的浓度,采用浓度检测来可控地调节载气的流速 流过接触区,以保持产物气体混合物中气相成分选择的输送速率和浓度。 本发明的气体输送系统特别适用于供应气态掺杂剂源化合物如胂,硒化氢和/或碲化氢,以制造半导体材料和半导体器件。
    • 43. 发明授权
    • Process and composition for drying of gaseous hydrogen halides
    • 用于干燥气态卤化氢的方法和组合物
    • US4925646A
    • 1990-05-15
    • US357049
    • 1989-05-25
    • Glenn M. TomDuncan W. Brown
    • Glenn M. TomDuncan W. Brown
    • B01D53/28C01B7/07C01B7/09C01B7/13C01B7/19C01G1/06
    • C01B7/093B01D53/28C01B7/0718C01B7/135C01B7/197C01G1/06
    • A process for drying a gaseous hydrogen halide of the formula HX, wherein X is bromine, Chlorine, FLuorine, or iodine, to remove water impurity therefrom, in which a scavenger precursor composition is provided, including a support having associated therewith partially or fully alkylated metal alkyl compounds or pendant groups. The precursor composition is reacted with gaseous hydrogen halide to convert the metal alkyl compounds and/or pendant functional groups to the corresponding metal halide compounds and/or pendant functional groups, which in turn react with the water impurity to produce an essentially completely water-free (below 0.1 ppm) gaseous hydrogen halide effluent. The process of the invention has utility for producing high purity, anhydrous gaseous hydrogen halides for semiconductor manufacturing operations.
    • 一种用于干燥式HX的气态卤化氢的方法,其中X是溴,氯,氟嘌呤或碘,以除去其中含有杂质的水分杂质,其中提供了一种清除剂前体组合物,包括其部分或完全烷基化的载体 金属烷基化合物或侧基。 前体组合物与气态卤化氢反应以将金属烷基化合物和/或侧链官能团转化成相应的金属卤化物化合物和/或侧基官能团,其又与水杂质反应以产生基本上完全无水的 (低于0.1ppm)气态卤化氢流出物。 本发明的方法可用于生产用于半导体制造操作的高纯度无水气态卤化氢。