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41. 发明授权

US5314843A Integrated circuit polishing method 失效
标题翻译：集成电路抛光方法
公开(公告)号：US5314843A
公开(公告)日：1994-05-24
申请号：US858670
申请日：1992-03-27
申请人： Chris C. Yu , Gurtej S. Sandhu , Trung T. Doan
发明人： Chris C. Yu , Gurtej S. Sandhu , Trung T. Doan
IPC分类号： H01L21/3105 , H01L21/302
CPC分类号： H01L21/7684 , H01L21/3105 , H01L21/31053
摘要： A semiconductor wafer has a surface layer to be planarized in a chemical mechanical polishing (CMP) process. An area of the layer that is higher than another area is altered so that the removal rate is higher. For example, if the surface layer is TEOS oxide, the higher layer may be bombarded with boron and phosphorus to produce BPSG, which has a polishing rate 2-3 times that of the TEOS. Upon CMP planarization, the higher area erodes faster resulting in improved planarization. Alternatively, the lower area may be doped with nitrogen to produce a nitride which is more resistant to CMP, with the same result. Likewise areas, such as tungsten troughs, which tend to be dished by CMP, may be changed to WNx which is more resistant to the tungsten CMP than the adjacent tungsten, eliminating the dishing upon planarization.
摘要翻译：半导体晶片在化学机械抛光（CMP）工艺中具有待平坦化的表面层。高于另一区域的层的区域被改变，使得去除率更高。例如，如果表面层是TEOS氧化物，则可以用硼和磷轰击较高层以产生BPSG，其具有2-3倍于TEOS的抛光速率。在CMP平坦化之后，较高区域的侵蚀速度更快，从而改善了平面化。或者，下部区域可以掺杂氮气以产生更耐CMP的氮化物，具有相同的结果。同样倾向于通过CMP抛光的钨槽的区域也可以改变为比相邻钨更耐钨钨的WNx，消除了平面化时的凹陷。

42. 发明授权

US5270263A Process for depositing aluminum nitride (AlN) using nitrogen plasma sputtering 失效
标题翻译：使用氮等离子体溅射沉积氮化铝（AlN）的方法
公开(公告)号：US5270263A
公开(公告)日：1993-12-14
申请号：US810837
申请日：1991-12-20
申请人： Sung C. Kim , Chris C. Yu , Trung T. Doan
发明人： Sung C. Kim , Chris C. Yu , Trung T. Doan
IPC分类号： C23C14/06 , H01L21/311 , H01L21/318 , H01L31/18 , H01L21/465 , C23C14/00
CPC分类号： C23C14/0617 , H01L21/31105 , H01L21/318 , H01L31/1852 , Y02E10/544
摘要： A process for depositing a thin film of aluminum nitride (AlN) includes sputtering an aluminum target with energetic nitrogen ions generated in a nitrogen plasma. A single gas (i.e. nitrogen) is used as both the reactive gas and as the sputtering gas. The process is especially adapted for forming an etchstop layer for use in forming contact vias through a dielectric layer in semiconductor manufacture. The process is also useful in semiconductor manufacture for forming an aluminum nitride (AlN) film that may be used as a passivation layer, as a ceramic packaging material, as a mask for ion implantation, as a substrate material in hybrid circuits, and as a high bandgap window for GaAs solar cells.
摘要翻译：沉积氮化铝薄膜（AlN）的方法包括用氮等离子体中产生的能量氮离子溅射铝靶。单一气体（即氮气）用作反应气体和溅射气体。该方法特别适用于形成用于在半导体制造中通过介电层形成接触孔的蚀刻阻挡层。该方法在半导体制造中也可用于形成可用作钝化层的氮化铝（AlN）膜，作为陶瓷封装材料，作为用于离子注入的掩模，作为混合电路中的基板材料，以及作为 GaAs太阳能电池的高带隙窗口。

43. 发明授权

US5225034A Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing 失效
标题翻译：半导体加工中化学机械抛光主要是含铜金属层的方法
公开(公告)号：US5225034A
公开(公告)日：1993-07-06
申请号：US893448
申请日：1992-06-04
申请人： Chris C. Yu , Trung T. Doan
发明人： Chris C. Yu , Trung T. Doan
IPC分类号： H01L21/321
CPC分类号： H01L21/3212
摘要： A semiconductor processing method of chemical mechanical polishing a predominately copper containing metal layer on a semiconductor substrate includes, a) providing a chemical mechanical polishing slurry comprising H.sub.2 O, a solid abrasive material, and a third component selected from the group consisting of HNO.sub.3, H.sub.2 SO.sub.4, and AgNO.sub.3 or mixtures thereof; and b) chemical mechanical polishing a predominately copper containing metal layer on a semiconductor substrate with the slurry. Such slurry also constitutes part of the invention. Such slurry may also contain an additional oxidant selected from the group consisting of H.sub.2 O.sub.2, HOCl, KOCl, KMgO.sub.4 and CH.sub.3 COOH or mixtures thereof to form a copper oxide passivating-type layer at the copper surface.
摘要翻译：在半导体衬底上主要含铜金属层的化学机械抛光的半导体加工方法包括：a）提供包含H 2 O，固体研磨材料和选自HNO 3，H 2 SO 4，和AgNO 3或其混合物; 和b）在具有浆料的半导体衬底上化学机械抛光主要含铜的金属层。这种浆料也构成本发明的一部分。这种浆料还可以含有选自H 2 O 2，HOCl，KOCl，KMgO 4和CH 3 COOH的其它氧化剂或其混合物，以在铜表面形成氧化铜钝化型层。

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