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    • 41. 发明授权
    • Vacuum ionization gauge with high sensitivity
    • 真空电离计高灵敏度
    • US07129708B1
    • 2006-10-31
    • US11187738
    • 2005-07-22
    • Peng LiuYang WeiLei-Mei ShengLiang LiuZhao-Fu HuCai-Lin GuoPi-Jin ChenShou-Shan Fan
    • Peng LiuYang WeiLei-Mei ShengLiang LiuZhao-Fu HuCai-Lin GuoPi-Jin ChenShou-Shan Fan
    • G01N27/62
    • G01N27/62
    • A vacuum ionization gauge (30) includes a cathode (31), an anode ring (33), a shield electrode (32), an ion educed electrode (34), a reflector (35) and a collector (36). The cathode is positioned corresponding to a first opening of the shield electrode, and the ion educed electrode is positioned corresponding to an opposite second opening of the shield electrode. An ion educed hole (341) is defined in a middle of the ion educed electrode. The reflector has a curving surface generally surrounding the second opening of the shield electrode. The collector is positioned at a center of the curving surface of the reflector and points toward the ion educed hole. The anode ring is positioned in the middle of the shield electrode. The vacuum ionization gauge is small volume and has low power consumption and improved sensitivity.
    • 真空电离计(30)包括阴极(31),阳极环(33),屏蔽电极(32),离子引出电极(34),反射器(35)和集电极(36)。 阴极对应于屏蔽电极的第一开口定位,并且离子引出电极对应于屏蔽电极的相对的第二开口定位。 离子排出孔(341)限定在离子引发电极的中间。 反射器具有通常围绕屏蔽电极的第二开口的弯曲表面。 收集器位于反射器的弯曲表面的中心并指向离子注入孔。 阳极环位于屏蔽电极的中间。 真空电离计体积小,功耗低,灵敏度提高。
    • 48. 发明申请
    • Field emission microelectronic device
    • 场发射微电子器件
    • US20080001513A1
    • 2008-01-03
    • US11640035
    • 2006-12-14
    • Pi-Jin ChenZhao-Fu HuLiang LiuShou-Shan Fan
    • Pi-Jin ChenZhao-Fu HuLiang LiuShou-Shan Fan
    • H01J1/02
    • H01J21/04H01J21/105
    • A nano-scaled field emission electronic device includes a substrate, a cathode electrode, and an anode electrode. The cathode electrode is placed on the substrate and has an emitter. The anode electrode is positioned opposite to and spaced from the cathode electrode. The nano-scaled field emission electronic device further has at least one kind of inert gas filled therein. The following condition is satisfied: h
    • 纳米级场发射电子器件包括衬底,阴极电极和阳极电极。 阴极被放置在衬底上并具有发射极。 阳极电极定位成与阴极电极相对并与其隔开。 纳米级场致发射电子器件还具有填充至少一种惰性气体。 满足以下条件:h λ,其中h表示发射极的顶端与阳极电极之间的距离, h << / MO> 10
        • 49. 发明申请
        • Field emission microelectronic device
        • 场发射微电子器件
        • US20080030117A1
        • 2008-02-07
        • US11639619
        • 2006-12-15
        • Pi-Jin ChenZhao-Fu HuLiang LiuShou-Shan Fan
        • Pi-Jin ChenZhao-Fu HuLiang LiuShou-Shan Fan
        • H01J1/02H01J1/00H01J19/06
        • H01J21/02H01J3/021
        • A nano-scaled field emission electronic device includes a substrate, a first insulating layer, a second insulating layer, a film of cathode electrode, and a film of anode electrode. The second insulating layer is positioned spaced from the first insulating layer. The cathode electrode is placed on the first insulating layer and has an emitter. The anode electrode is placed on the second insulating layer and positioned opposite to the cathode electrode. The nano-scaled field emission electronic device further has at least one kind of inert gas filled therein. The following condition is satisfied: h
        • 纳米级场发射电子器件包括衬底,第一绝缘层,第二绝缘层,阴极电极膜和阳极电极膜。 第二绝缘层与第一绝缘层隔开。 阴极被放置在第一绝缘层上并具有发射极。 阳极电极被放置在第二绝缘层上并与阴极相对设置。 纳米级场致发射电子器件还具有填充至少一种惰性气体。 满足以下条件:h λ,其中h表示发射极的顶端与阳极电极之间的距离, h << / MO> 10