专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明申请

US20120264612A1 BUFFER LAYERS FOR REBCO FILMS FOR USE IN SUPERCONDUCTING DEVICES 有权
标题翻译：用于超级电容器的REBCO膜的缓冲层
公开(公告)号：US20120264612A1
公开(公告)日：2012-10-18
申请号：US13088179
申请日：2011-04-15
申请人： Amit Goyal , Sung-Hun Wee
发明人： Amit Goyal , Sung-Hun Wee
IPC分类号： H01L39/12 , H01L39/24 , H01L39/02 , B05D5/12
CPC分类号： H01B12/00 , H01L39/126 , H01L39/24 , H01L39/2461 , Y10T428/24355
摘要： A superconducting article includes a substrate having a biaxially textured surface. A biaxially textured buffer layer, which can be a cap layer, is supported by the substrate. The buffer layer includes a double perovskite of the formula A2B′B″O6, where A is rare earth or alkaline earth metal and B′ and B″ are different transition metal cations. A biaxially textured superconductor layer is deposited so as to be supported by the buffer layer. A method of making a superconducting article is also disclosed.
摘要翻译：超导制品包括具有双轴纹理表面的基底。可以是盖层的双轴纹理化缓冲层由衬底支撑。缓冲层包括式A2B'B“O6的双钙钛矿，其中A是稀土或碱土金属，B'和B”是不同的过渡金属阳离子。沉积双轴纹理的超导体层以便被缓冲层支撑。还公开了制造超导制品的方法。

42. 发明授权

US08227082B2 Faceted ceramic fibers, tapes or ribbons and epitaxial devices therefrom 有权
标题翻译：方形陶瓷纤维，带或带及其外延装置
公开(公告)号：US08227082B2
公开(公告)日：2012-07-24
申请号：US11861949
申请日：2007-09-26
申请人： Amit Goyal
发明人： Amit Goyal
IPC分类号： H01L29/04 , H01L39/24 , C04B35/01 , C30B15/00
CPC分类号： H01L39/2461 , C30B15/34 , C30B29/16 , C30B29/20 , C30B29/24 , C30B29/32 , C30B29/607 , C30B29/64 , H01L21/0242 , H01L21/02436 , H01L21/02521 , H01L39/2458 , Y10S505/701 , Y10S505/704 , Y10T428/2924 , Y10T428/2958 , Y10T428/2964 , Y10T428/2973
摘要： A crystalline article includes a single-crystal ceramic fiber, tape or ribbon. The fiber, tape or ribbon has at least one crystallographic facet along its length, which is generally at least one meter long. In the case of sapphire, the facets are R-plane, M-plane, C-plane or A-plane facets. Epitaxial articles, including superconducting articles, can be formed on the fiber, tape or ribbon.
摘要翻译：结晶制品包括单晶陶瓷纤维，带或带。纤维，胶带或带子沿其长度具有至少一个晶面，其通常至少一米长。在蓝宝石的情况下，刻面是R平面，M平面，C平面或A平面。可以在纤维，带或带上形成包括超导物品在内的外延制品。

43. 发明申请

US20120156124A1 Single Wall Carbon Nanotubes By Atmospheric Chemical Vapor Deposition 审中-公开
标题翻译：单壁碳纳米管通过大气化学气相沉积
公开(公告)号：US20120156124A1
公开(公告)日：2012-06-21
申请号：US12029856
申请日：2008-02-12
申请人： Amit Goyal , Iqbal Zafar
发明人： Amit Goyal , Iqbal Zafar
IPC分类号： D01F9/12 , B82B1/00 , B82B3/00
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/162 , C01B2202/02
摘要： The present disclosure provides for systems and methods for producing carbon nanotubes. More particularly, the present disclosure provides for improved systems and methods for producing single wall carbon nanotubes (SWNTs) by chemical vapor deposition (CVD) using a carbon source in the presence of a catalyst. In exemplary embodiments, the present disclosure provides for improved systems and methods for producing single wall carbon nanotubes (SWNTs) by chemical vapor deposition (CVD) using carbon monoxide (CO) disproportionation in the presence of a catalyst composition on a catalyst support material. In one embodiment, the present disclosure provides for systems and methods for producing single wall carbon nanotubes (SWNTs) by chemical vapor deposition (CVD) using carbon monoxide (CO) disproportionation with CO pressure from about 0.20 atm to about 1.0 atm in the presence of a cobalt/molybdenum catalyst composition on a magnesium oxide catalyst support.
摘要翻译：本公开提供了用于生产碳纳米管的系统和方法。更具体地，本公开提供了通过在催化剂存在下使用碳源的化学气相沉积（CVD）来制备单壁碳纳米管（SWNT）的改进的系统和方法。在示例性实施例中，本公开提供了在催化剂载体材料上的催化剂组合物存在下使用一氧化碳（CO）歧化，通过化学气相沉积（CVD）制备单壁碳纳米管（SWNT）的改进的系统和方法。在一个实施方案中，本公开提供了通过化学气相沉积（CVD）使用一氧化碳（CO）歧化制备单壁碳纳米管（SWNT）的系统和方法，其中CO压力为约0.20atm至约1.0atm，在氧化镁催化剂载体上的钴/钼催化剂组合物。

44. 发明授权

US08119571B2 High performance electrical, magnetic, electromagnetic and electrooptical devices enabled by three dimensionally ordered nanodots and nanorods 失效
标题翻译：通过三维有序纳米点和纳米棒实现的高性能电气，磁性，电磁和电光器件
公开(公告)号：US08119571B2
公开(公告)日：2012-02-21
申请号：US11498120
申请日：2006-08-03
申请人： Amit Goyal , Sukill Kang
发明人： Amit Goyal , Sukill Kang
IPC分类号： H01L39/24 , H01L29/04 , H01L39/00 , C23C14/34
CPC分类号： H01L39/143 , C23C14/08 , C23C14/087 , C23C14/28 , C23C14/3414 , H01L39/2448 , H01L43/10 , Y10S505/731 , Y10T428/24802 , Y10T428/29 , Y10T428/2927
摘要： Novel articles and methods to fabricate same with self-assembled nanodots and/or nanorods of a single or multicomponent material within another single or multicomponent material for use in electrical, electronic, magnetic, electromagnetic and electrooptical devices is disclosed. Self-assembled nanodots and/or nanorods are ordered arrays wherein ordering occurs due to strain minimization during growth of the materials. A simple method to accomplish this when depositing in-situ films is also disclosed. Device applications of resulting materials are in areas of superconductivity, photovoltaics, ferroelectrics, magnetoresistance, high density storage, solid state lighting, non-volatile memory, photoluminescence, thermoelectrics and in quantum dot lasers.
摘要翻译：公开了在用于电气，电子，磁性，电磁和电光学装置的另一单组分或多组分材料中制造与单组分或多组分材料的自组装纳米点和/或纳米棒相同的新型制品和方法。自组装纳米点和/或纳米棒是有序阵列，其中由于材料生长期间的应变最小化而发生排序。还公开了当沉积原位膜时实现这一点的简单方法。所得材料的器件应用在超导，光伏，铁电，磁阻，高密度存储，固态照明，非易失性存储器，光致发光，热电和量子点激光器等领域。

45. 发明授权

US07964143B2 Nanotube device and method of fabrication 有权
标题翻译：纳米管装置及其制造方法
公开(公告)号：US07964143B2
公开(公告)日：2011-06-21
申请号：US11765735
申请日：2007-06-20
申请人： Reginald Conway Farrow , Amit Goyal , Zafar Iqbal , Sheng Liu
发明人： Reginald Conway Farrow , Amit Goyal , Zafar Iqbal , Sheng Liu
IPC分类号： G01N33/48
CPC分类号： C25D13/04 , B82Y15/00 , B82Y30/00 , C25D13/20 , G01N27/4146 , Y10S977/72 , Y10S977/957 , Y10S977/958
摘要： A nanotube device and a method of depositing nanotubes for device fabrication are disclosed. The method relates to electrophoretic deposition of nanotubes, and allows a control of the number of deposited nanotubes and positioning within a defined region.
摘要翻译：公开了一种用于器件制造的纳米管器件和沉积纳米管的方法。该方法涉及纳米管的电泳沉积，并且允许控制沉积的纳米管的数量和在限定区域内的定位。

46. 发明申请

US20110062446A1 <100> or 45 degrees-rotated <100>, semiconductor-based, large-area, flexible, electronic devices 有权
标题翻译：基于半导体，大面积，灵活的电子设备，<100>或45度旋转<100>
公开(公告)号：US20110062446A1
公开(公告)日：2011-03-17
申请号：US12011450
申请日：2008-01-28
申请人： Amit Goyal
发明人： Amit Goyal
IPC分类号： H01L29/04
CPC分类号： H01L21/02532 , H01L21/02381 , H01L21/02425 , H01L21/02433 , H01L21/02439 , H01L21/02463 , H01L21/02491 , H01L21/02502 , H01L21/02505 , H01L21/02516 , H01L21/02521 , H01L21/02543
摘要： Novel articles and methods to fabricate the same resulting in flexible, {100} or 45°-rotated {100} oriented, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.
摘要翻译：公开了制造相同的新型制品和方法，产生了柔性的{100} <100>或45°旋转{100} <100>取向的基于半导体的电子器件。所得物品的潜在应用是在光伏器件，平板显示器，热光伏器件，铁电器件，发光二极管器件，计算机硬盘驱动器件，基于磁阻的器件，基于光致发光的器件，非易失性存储器件，介质器件，热电装置和量子点激光装置。

47. 发明申请

US20110034338A1 CRITICAL CURRENT DENSITY ENHANCEMENT VIA INCORPORATION OF NANOSCALE Ba2(Y,RE)TaO6 IN REBCO FILMS 审中-公开
标题翻译：纳米级Ba2（Y，RE）TaO6在REBCO膜中的临界电流密度增强
公开(公告)号：US20110034338A1
公开(公告)日：2011-02-10
申请号：US12850521
申请日：2010-08-04
申请人： Amit Goyal , Claudia Cantoni , Eliot Specht , Sung-Hun Wee
发明人： Amit Goyal , Claudia Cantoni , Eliot Specht , Sung-Hun Wee
IPC分类号： H01L39/00 , H01L39/24 , B32B9/00 , B05D5/12 , C23C14/34
CPC分类号： H01L39/126 , H01L39/2448 , H01L39/2483 , Y10T428/24132 , Y10T428/258
摘要： A superconducting article includes a substrate having a biaxially textured surface, and an epitaxial biaxially textured superconducting film supported by the substrate. The epitaxial superconducting film includes particles of Ba2RETaO6 and is characterized by a critical current density higher than 1 MA/cm2 at 77K, self-field. In one embodiment the particles are assembled into columns. The particles and nanocolumns of Ba2RETaO6 defects enhance flux pinning which results in improved critical current densities of the superconducting films. Methods of making superconducting films with Ba2RETaO6 defects are also disclosed.
摘要翻译：超导制品包括具有双轴纹理化表面的基底和由基底支撑的外延双轴纹理超导薄膜。外延超导膜包括Ba2RETaO6的颗粒，其特征在于在77K处的自激的临界电流密度高于1MA / cm 2。在一个实施方案中，颗粒被组装成柱。 Ba2RETaO6缺陷的颗粒和纳米柱增强磁通钉扎，导致超导膜的临界电流密度提高。还公开了制备具有Ba2RETaO6缺陷的超导膜的方法。

48. 发明申请

US20110033674A1 Structures with Three Dimensional Nanofences Comprising Single Crystal Segments 有权
标题翻译：包含单晶层的三维纳米结构的结构
公开(公告)号：US20110033674A1
公开(公告)日：2011-02-10
申请号：US12711309
申请日：2010-02-24
申请人： Amit Goyal , Sung-Hun Wee
发明人： Amit Goyal , Sung-Hun Wee
IPC分类号： B32B3/10 , B05D5/12 , C23C14/28 , C23C14/34
CPC分类号： D02G3/00 , C30B11/12 , C30B29/16 , C30B29/605 , H01L39/2422 , H01L39/2454 , H01M4/0428 , H01M4/131 , H01M4/134 , H01M4/1391 , H01M4/1395 , H01M4/366 , H01M4/505 , H01M4/525 , Y10T428/2481 , Y10T428/249921 , Y10T428/2913 , Y10T428/298
摘要： A simple and controlled method to fabricate a 3D, epitaxial, biaxially textured nanofence comprised of single crystalline MgO nanobelt segments or links that grew both vertically and horizontally along directions of the (100) STO substrate was developed. Continuous supply of Ni catalyst during the co-laser ablation of MgO and Ni metal led to the growth of nanobelts with such a unique morphology. Individual single crystalline MgO nanobelts had a square cross-section with high aspect ratios. X-ray diffraction results obtained from an entire MgO nanofence layer confirmed that MgO nanofence had epitaxial relation with STO substrate of [100]MgO∥[100]STO. Such oxide nanofences can be used as a 3D biaxially-textured nanotemplate for epitaxial growth of wide-ranging, 3D, electronic, magnetic and electromagnetic nanodevices.
摘要翻译：开发了一种用于制造由（100）STO衬底沿着100个方向生长的单晶MgO纳米带段或链节构成的3D，外延，双轴纹理化纳米的简单和可控的方法。在MgO和Ni金属的共激光烧蚀期间连续供应Ni催化剂导致具有这种独特形态的纳米带的生长。单个单晶MgO纳米带具有高纵横比的正方形横截面。从整个MgO纳米层获得的X射线衍射结果证实MgO纳米具有与[100] MgO | [100] STO的STO衬底的外延关系。这种氧化物纳米结构可用作3D双轴织构的纳米模板，用于宽范围，3D，电子，磁性和电磁纳米器件的外延生长。

49. 发明申请

US20100088130A1 Discovering Leaders in a Social Network 审中-公开
标题翻译：发现社会网络领袖
公开(公告)号：US20100088130A1
公开(公告)日：2010-04-08
申请号：US12246668
申请日：2008-10-07
申请人： Francesco Bonchi , Laks V.S. Lakshmanan , Amit Goyal
发明人： Francesco Bonchi , Laks V.S. Lakshmanan , Amit Goyal
IPC分类号： G06Q10/00 , G06F17/30
CPC分类号： G06Q30/02 , G06Q10/06395 , G06Q50/01
摘要： Particular embodiments of the present invention are related to discovering the identity of leaders who influence the performance of particular actions in the context of a social network.
摘要翻译：本发明的特定实施例涉及发现在社交网络的上下文中影响特定动作的性能的领导者的身份。

50. 发明申请

US20090088325A1 High performance electrical, magnetic, electromagnetic and electrooptical devices enabled by three dimensionally ordered nanodots and nanorods 失效
标题翻译：通过三维有序纳米点和纳米棒实现的高性能电气，磁性，电磁和电光器件
公开(公告)号：US20090088325A1
公开(公告)日：2009-04-02
申请号：US11498120
申请日：2006-08-03
申请人： Amit Goyal , Sukill Kang
发明人： Amit Goyal , Sukill Kang
IPC分类号： H01B12/02 , B32B3/10 , B05D5/12 , B05D3/06 , C23C14/34
CPC分类号： H01L39/143 , C23C14/08 , C23C14/087 , C23C14/28 , C23C14/3414 , H01L39/2448 , H01L43/10 , Y10S505/731 , Y10T428/24802 , Y10T428/29 , Y10T428/2927
摘要： Novel articles and methods to fabricate same with self-assembled nanodots and/or nanorods of a single or multicomponent material within another single or multicomponent material for use in electrical, electronic, magnetic, electromagnetic and electrooptical devices is disclosed. Self-assembled nanodots and/or nanorods are ordered arrays wherein ordering occurs due to strain minimization during growth of the materials. A simple method to accomplish this when depositing in-situ films is also disclosed. Device applications of resulting materials are in areas of superconductivity, photovoltaics, ferroelectrics, magnetoresistance, high density storage, solid state lighting, non-volatile memory, photoluminescence, thermoelectrics and in quantum dot lasers.
摘要翻译：公开了在用于电气，电子，磁性，电磁和电光学装置的另一单组分或多组分材料中制造与单组分或多组分材料的自组装纳米点和/或纳米棒相同的新型制品和方法。自组装纳米点和/或纳米棒是有序阵列，其中由于材料生长期间的应变最小化而发生排序。还公开了当沉积原位膜时实现这一点的简单方法。所得材料的器件应用在超导，光伏，铁电，磁阻，高密度存储，固态照明，非易失性存储器，光致发光，热电和量子点激光器等领域。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式