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    • 41. 发明申请
    • Semiconductor laser device having a diffraction grating on a light reflection side
    • 在光反射侧具有衍射光栅的半导体激光装置
    • US20020154665A1
    • 2002-10-24
    • US09983175
    • 2001-10-23
    • THE FURUKAWA ELECTRIC CO., LTD.
    • Masaki FunabashiNaoki TsukijiJunji Yoshida
    • H01S005/00H01S003/08
    • H01S5/125H01S3/094003H01S3/09415H01S5/1021H01S5/1039H01S5/141H01S5/146
    • A semiconductor device includes an active layer configured to radiate light, a light reflecting facet positioned on a first side of the active layer, a light emitting facet positioned on a second side of the active layer thereby forming a resonant cavity between the light reflecting facet and the light emitting facet, and a partial diffraction grating having a predetermined length and positioned on a light reflecting side of the resonator. The predetermined length of the partial diffraction grating is selected such that the semiconductor device emits a light beam having a plurality of longitudinal modes within a predetermined spectral width of an oscillation wavelength spectrum of the semiconductor device. The predetermined length of the partial diffraction grating may be set in relation to a length of the resonant cavity, or in relation to a coupling coefficient of the diffraction grating. The semiconductor device may also include another partial diffraction grating positioned on the light emitting side of the laser device.
    • 半导体器件包括被配置为辐射光的有源层,位于有源层的第一侧上的光反射小面,位于有源层的第二侧上的发光小面,从而在光反射面和 发光面和具有预定长度并位于谐振器的光反射侧的部分衍射光栅。 选择部分衍射光栅的预定长度,使得半导体器件发射在半导体器件的振荡波长谱的预定光谱宽度内具有多个纵向模的光束。 部分衍射光栅的预定长度可以相对于谐振腔的长度设置,或者相对于衍射光栅的耦合系数来设定。 半导体器件还可以包括位于激光器件的发光侧的另一部分衍射光栅。
    • 42. 发明申请
    • Optical transmission system
    • 光传输系统
    • US20020154386A1
    • 2002-10-24
    • US10085709
    • 2002-03-01
    • THE FURUKAWA ELECTRIC CO., LTD.
    • Takeshi HirasawaYoshihiro EmoriSoko Kado
    • H01S003/00
    • H04B10/2916
    • An optical transmission system is provided in which a plurality of Raman amplifiers are combined so that the wavelength band of a first Raman amplifier in the form of an upward convex curve including the maximum gain value and the wavelength band of a second Raman amplifier in the form of a downward convex curve including the minimum gain value overlap with each other, and that the wavelength band of the first Raman amplifier in the form of a downward convex curve including the minimum gain value and the wavelength band of the second Raman amplifier in the form of an upward convex curve including the maximum gain value overlap with each other. This arrangement also applies to cases where three or more amplifiers are used. Due to this arrangement, an optical transmission system is realized in which it is possible to attain a reduction in Raman gain flatness without using any means such as an equalizer.
    • 提供了一种光传输系统,其中组合多个拉曼放大器,使得以包括第二拉曼放大器的最大增益值和第二拉曼放大器的波长带的向上凸曲线的形式的第一拉曼放大器的波长带的形式 包括最小增益值的向下凸曲线彼此重叠,并且以包括第二拉曼放大器的最小增益值和第二拉曼放大器的波长带的向下凸曲线的形式的第一拉曼放大器的波长带的形式 包括最大增益值的向上凸曲线彼此重叠。 这种布置也适用于使用三个或更多放大器的情况。 由于这种布置,实现了一种光传输系统,其中可以在不使用诸如均衡器的任何装置的情况下实现拉曼增益平坦度的降低。
    • 43. 发明申请
    • Semiconductor laser device
    • 半导体激光器件
    • US20020146050A1
    • 2002-10-10
    • US09828144
    • 2001-04-09
    • THE FURUKAWA ELECTRIC Co., Ltd.
    • Norihiro IwaiMasaki FunabashiToshikazu MukaiharaAkihiko Kasukawa
    • H01S005/00
    • H01S5/12H01S5/1231
    • A semiconductor laser device comprising a substrate, a resonator overlying said substrate, a waveguide overlying said substrate and optically coupled to said resonator, and a diffraction grating formed on said resonator or said waveguide, said diffraction grating including slits or grooves formed on an Al-oxidized region of an Al-containing oxidized semiconductor layer, said Al-oxidized region being formed by selectively oxidizing Al in said Al-containing oxidized semiconductor layer. In the present invention, the difference between the refractive indices of the layer having the embedded grating and the Al oxide layer becomes larger to increase the coupling constant between laser beams and the grating. The decrease of the cavity length can increase the number of the devices obtainable from a single wafer.
    • 一种半导体激光器件,包括衬底,覆盖所述衬底的谐振器,覆盖所述衬底并光学耦合到所述谐振器的波导和形成在所述谐振器或所述波导上的衍射光栅,所述衍射光栅包括形成在Al- 所述Al氧化区域通过在所述含Al氧化物半导体层中选择性氧化Al而形成。 在本发明中,具有嵌入光栅的层和Al氧化物层的折射率之间的差异变大,以增加激光束与光栅之间的耦合常数。 腔长度的减小可以增加从单个晶片获得的器件的数量。
    • 44. 发明申请
    • Device for continuously twisting an optical fiber
    • 用于连续扭曲光纤的装置
    • US20020134114A1
    • 2002-09-26
    • US09994605
    • 2001-11-28
    • THE FURUKAWA ELECTRIC CO., LTD.
    • Nobuaki Orita
    • C03B037/022
    • C03B37/032C03B2203/19C03B2203/36C03B2205/06
    • A device for continuously twisting an optical fiber, which can add a sufficient twist to an optical fiber, is provided. Reciprocating rollers reciprocate so that the moving direction would be opposite each other along a center axis of rotation. The optical fiber passes through a gap between the reciprocating rollers and runs in contact with the outer circumferential surface of respective reciprocating rollers in order. Reciprocation of the reciprocating rollers adds a twist to the optical fiber. When null is a contacting angle between the optical fiber and the reciprocating rollers, F is maximum static friction of the optical fiber against the outer circumferential surface of the reciprocating rollers, and T is tension of the optical fiber, the coefficient of friction null between the optical fiber and the outer circumferential surface of the reciprocating rollers is lead from an operational formula of nullnull(1/null)nullIn(F/T). This coefficient of friction is set at a value in a range from not less than 0.6 to not more than 0.9.
    • 提供一种用于连续扭曲光纤的装置,其可以向光纤增加足够的扭曲。 往复滚轮往复运动,使得移动方向沿着中心旋转轴线彼此相对。 光纤通过往复运动辊之间的间隙并依次与各个往复运动辊的外圆周表面相接触。 往复运动的往复运动辊的往复运动给光纤增加了一个扭曲。 当phi是光纤和往复辊之间的接触角时,F是光纤相对于往复辊的外周面的最大静摩擦力,T是光纤的张力, 光纤和往复滚轮的外圆周表面从μ=(1 / +)的运算公式引出,在(F / T)中。 该摩擦系数设定在0.6以上0.9以下的范围。