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41. 发明授权

US06777728B2 Semiconductor device and complementary semiconductor device 失效
标题翻译：半导体器件和互补半导体器件
公开(公告)号：US06777728B2
公开(公告)日：2004-08-17
申请号：US10329773
申请日：2002-12-27
申请人： Masashi Shima , Tetsuji Ueno , Yoshiki Sakuma , Shunji Nakamura
发明人： Masashi Shima , Tetsuji Ueno , Yoshiki Sakuma , Shunji Nakamura
IPC分类号： H01L2976
CPC分类号： H01L29/7842 , H01L21/823807 , H01L27/0922 , H01L29/1054 , H01L29/802
摘要： A semiconductor device includes a channel layer, a gate electrode formed on the channel layer, a p-type source region formed on a first side of the channel layer, and a p-type drain region formed on a second side of the channel layer. A heavy-hole band and a light-hole band are separated by compressive strain applied isotropically in an in-plane direction in the channel layer. A channel direction connecting the p-type source and drain regions is set substantially to a direction to maximize hole mobility in the channel layer.
摘要翻译：半导体器件包括沟道层，形成在沟道层上的栅电极，形成在沟道层的第一侧上的p型源极区域和形成在沟道层的第二侧上的p型漏极区域。重孔带和光孔带通过在通道层中的面内方向各向同性地施加的压缩应变来分离。连接p型源极区域和漏极区域的沟道方向基本上设置成使沟道层中的空穴迁移率最大化的方向。

42. 发明申请

US20070054457A1 Method of fabricating MOS transistor having epitaxial region 有权
标题翻译：制造具有外延区域的MOS晶体管的方法
公开(公告)号：US20070054457A1
公开(公告)日：2007-03-08
申请号：US11517246
申请日：2006-09-08
申请人： Tetsuji Ueno , Hwa-Sung Rhee , Ho Lee
发明人： Tetsuji Ueno , Hwa-Sung Rhee , Ho Lee
IPC分类号： H01L21/336
CPC分类号： H01L29/7848 , H01L21/26506 , H01L21/26513 , H01L21/2658 , H01L29/1083 , H01L29/165 , H01L29/6653 , H01L29/6656 , H01L29/66636
摘要： Example embodiments relate to a method of manufacturing a semiconductor device. Other example embodiments relate to a method of manufacturing a metal-oxide-semiconductor (MOS) transistor having an epitaxial region disposed in a lower portion of sidewalls of a gate pattern. Provided is a method of manufacturing a MOS transistor having an epitaxial region which improves an epitaxial growth rate and which may have fewer defects. The method of manufacturing a MOS transistor having an epitaxial region may include forming a gate pattern on a semiconductor substrate, forming a first ion implantation region having a first damage profile by implanting first impurity ions into the semiconductor substrate using the gate pattern as an ion implantation mask, forming a second ion implantation region having a second damage profile adjacent to the first damage profile by implanting second impurity ions into the semiconductor substrate using the gate pattern as an ion implantation mask and partially etching a lower portion of sidewalls of the gate pattern and forming in-situ an epitaxial region on the etched semiconductor substrate.
摘要翻译：示例实施例涉及制造半导体器件的方法。其他示例实施例涉及制造具有设置在栅极图案的侧壁的下部中的外延区域的金属氧化物半导体（MOS）晶体管的方法。提供一种制造具有提高外延生长速率并且可能具有较少缺陷的外延区域的MOS晶体管的方法。制造具有外延区域的MOS晶体管的方法可以包括在半导体衬底上形成栅极图案，通过使用栅极图案作为离子注入，将第一杂质离子注入到半导体衬底中，形成具有第一损伤分布的第一离子注入区域通过使用所述栅极图案作为离子注入掩模将所述第二杂质离子注入到所述半导体衬底中，形成具有与所述第一损伤分布相邻的第二损伤分布的第二离子注入区，并部分地蚀刻所述栅极图案的侧壁的下部;以及在蚀刻的半导体衬底上原位形成外延区域。

43. 发明申请

US20070001690A1 Probe 失效
标题翻译：探测
公开(公告)号：US20070001690A1
公开(公告)日：2007-01-04
申请号：US10553064
申请日：2004-04-13
申请人： Tetsuji Ueno , Yoshihiro Hirata , Kazunori Okada , Kazunori Kawase
发明人： Tetsuji Ueno , Yoshihiro Hirata , Kazunori Okada , Kazunori Kawase
IPC分类号： G01R31/02
CPC分类号： G01R1/06733
摘要： It is an object of the present invention to provide a beam splitter providing a high-contrast image and preventing light from scattering, and a laser scanning microscope provided with the above, in which there is provided a high-quality probe coming in contact with an electrode pad of a semiconductor device, in which a foreign substance is not likely to attach, a configuration is not likely changed and a preferable electrical contact can be maintained for a long time. According to the present invention, a probe coming into contact with an electrode pad of a measurement object comprises a connection terminal part integrally formed and connected to a substrate, a contact part having a tapered configuration, and a supporting part which supports the contact part. The contact part extending from an end of the supporting part has a sectional configuration which shares at least one side face with the supporting part.
摘要翻译：本发明的目的是提供一种提供高对比度图像并防止光散射的分束器，以及具有上述的激光扫描显微镜，其中提供了与由于外部物质不易附着的半导体器件的电极焊盘，因此不会发生形态变化，并且能够长时间保持优选的电接触。根据本发明，与测量对象的电极焊盘接触的探针包括一体地形成并连接到基板的连接端子部分，具有锥形构造的接触部分和支撑接触部分的支撑部分。从支撑部的端部延伸的接触部具有与支撑部分共享至少一个侧面的截面构造。

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