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    • 42. 发明申请
    • ELECTROSTATIC CHUCK AND METHOD OF MANUFACTURING ELECTROSTATIC CHUCK
    • 静电切割机及其制造方法
    • US20150116889A1
    • 2015-04-30
    • US14397297
    • 2013-03-22
    • TOCALO CO., LTD.
    • Ryo YamasakiMitsuharu InabaKensuke Taguchi
    • H01L21/683C23C4/12
    • H01L21/6833C23C4/01C23C4/11C23C4/12H01L21/67103H01L21/6831H02N13/00
    • An electrostatic chuck and a manufacturing method are disclosed in which drawbacks of using an adhesive are not existent and a freedom degree of design is high. The electrostatic chuck includes a substrate part constituting a main chuck body, a first insulating layer of a spray coating formed to the surface of the substrate part, a heater part of an electric conductor formed by applying a conductive paste to the surface of the first insulating layer, a second insulating layer of a spray coating formed to the surface of the first insulating layer so as to cover the heater part, an electrode part formed by thermal spraying to the surface of the second insulating layer and a dielectric layer of a spray coating formed to the surface of the second layer so as to cover the electrode part and lowers a volume resistivity without using an adhesive.
    • 公开了一种静电卡盘和制造方法,其中不存在使用粘合剂的缺点,自由度高。 静电卡盘包括构成主卡盘主体的基板部分,形成在基板部分表面上的喷涂层的第一绝缘层,通过将导电浆料涂敷到第一绝缘层的表面而形成的电导体的加热器部分 层,形成在第一绝缘层的表面上以覆盖加热器部分的喷涂层的第二绝缘层,通过热喷涂形成于第二绝缘层的表面上的电极部分和喷涂层的介电层 形成到第二层的表面,以便覆盖电极部分,并且在不使用粘合剂的情况下降低体积电阻率。
    • 43. 发明授权
    • Plasma processing apparatus and method
    • 等离子体处理装置及方法
    • US08896210B2
    • 2014-11-25
    • US13705712
    • 2012-12-05
    • Tokyo Electron LimitedTocalo Co., Ltd.
    • Masaru NishinoMasatsugu MakabeNobuyuki NagayamaTatsuya HandaRyotaro MidorikawaKeigo KobayashiTetsuya Niya
    • H01J7/24H05H1/46H01J37/32
    • H05H1/46H01J37/32477H01J37/32495
    • A plasma processing apparatus includes a processing chamber; a lower electrode serving as a mounting table for mounting thereon a target object; and an upper electrode or an antenna electrode provided to be opposite to the lower electrode. The apparatus further includes a gas supply source for introducing a gas including a halogen-containing gas and an oxygen gas into the processing chamber and a high frequency power supply for applying a high frequency power for generating plasma to at least one of the upper electrode, the antenna electrode, or the lower electrode. Among inner surfaces of the processing chamber which are exposed to the plasma, at least a part of or all of the surfaces between a mounting position of the target object and the upper electrode, or the antenna electrode; or at least a part of or all of the surfaces of the upper electrode or the antenna electrode are coated with a fluorinated compound.
    • 等离子体处理装置包括处理室; 用作安装台的下电极,用于安装目标物体; 以及设置成与下电极相对的上电极或天线电极。 该装置还包括用于将包含含卤素气体和氧气的气体引入处理室的气体供给源和用于将高频电力施加到上部电极中的至少一个的高频电源, 天线电极或下电极。 在暴露于等离子体的处理室的内表面中,目标物体的安装位置与上部电极或天线电极之间的至少一部分或全部表面; 或上部电极或天线电极的至少一部分或全部表面涂覆有氟化合物。