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    • 43. 发明申请
    • Liquid and method for liquid immersion lithography
    • 液浸法和液浸式光刻法
    • US20050186513A1
    • 2005-08-25
    • US10784922
    • 2004-02-24
    • Martin LetzKonrad KnappHauke EsemannAndreas Voitsch
    • Martin LetzKonrad KnappHauke EsemannAndreas Voitsch
    • G03F7/00G03F7/20
    • G03F7/2041G03F7/70341G03F7/70566
    • The present invention relates to a new class of compound useful as liquid for immersion lithography, said liquid comprising molecules so that said liquid is substantially transparent at a wavelength used for said liquid immersion lithography, wherein a degree of polarization of light, which is incident on a sample of said liquid in a forward direction and which is scattered in a direction perpendicular to said forward direction within a plane of scattering defined by said forward direction and said direction perpendicular to said forward direction, is larger than 0.9. Suited liquids are, for example, such comprising molecules transparent to UV radiation, wherein said molecules are high-symmetric molecules. Suited compounds are defined by A(R)4 wherein A is defined to be a 4-valent element and R is selected from —(C)n— and —(Si)n—, with n=1 to 10, wherein the remaining valences of the carbon or silica are saturated by one (or more) selected from hydrogen and a halogen. The invention further relates to a method for exposing a photoresist layer on a semiconductor substrate for producing microelectronic circuits or micro-electromechanical systems (MEMS). The method uses a step of liquid immersion lithography using a liquid according to the invention.
    • 本发明涉及可用作浸没式光刻液体的新类化合物,所述液体包含分子,使得所述液体在用于所述液浸光刻的波长处基本上是透明的,其中入射到 所述液体在向前方向上的样品在垂直于所述正向方向的垂直方向和垂直于所述正向的方向的散射面内沿垂直于所述正向的方向散射,大于0.9。 合适的液体例如是包含对UV辐射透明的分子,其中所述分子是高对称分子。 适用的化合物由<?in-line-formula description =“In-line Formulas”end =“lead”?> A(R)<4> <?in-line-formula description =“In 其中A定义为4价元素,并且R选自 - (C)n - 和 - (Si)n < 其中n = 1至10,其中碳或二氧化硅的剩余价数由选自氢和卤素的一个(或多个)饱和。 本发明还涉及用于在用于制造微电子电路或微机电系统(MEMS)的半导体衬底上曝光光致抗蚀剂层的方法。 该方法使用根据本发明的液体的液浸光刻步骤。