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    • 42. 发明授权
    • Image sensor and method of driving transfer transistor of image sensor
    • 图像传感器和驱动图像传感器传输晶体管的方法
    • US07671315B2
    • 2010-03-02
    • US11635174
    • 2006-12-07
    • Bong Ki MheenMi Jin KimYoung Joo Song
    • Bong Ki MheenMi Jin KimYoung Joo Song
    • H01L31/062H04N5/335
    • H04N5/3597H01L27/14603H01L27/14609H04N5/357H04N5/361H04N5/3745
    • Provided is a 4-transistor CMOS image in which a driving condition or a pixel structure is changed so that a transfer transistor in a pixel operates in a pinch-off condition during reset and transfer operations in order to reduce dark current and fixed-pattern noise caused by a change in an operation condition of the transfer transistor and inter-pixel characteristic discrepancy. The image sensor includes a photosensitive pixel including a transfer transistor for transferring photon-induced charges created in a photodiode; and a voltage control unit for controlling a turn-on voltage applied to a gate of the transfer transistor to be lower than a floating diffusion node voltage plus the threshold voltage of the transfer transistor during a partial or entire section of a turn-on section of the transfer transistor such that the transfer transistor operates in a pseudo pinch-off mode.
    • 提供了一种4晶体管CMOS图像,其中改变驱动条件或像素结构,使得像素在复位和传输操作期间在夹断状态下工作,以减少暗电流和固定图案噪声 由转移晶体管的操作条件的变化和像素间特性差异引起。 图像传感器包括光敏像素,其包括用于传输在光电二极管中产生的光子感应电荷的转移晶体管; 以及电压控制单元,用于在所述转移晶体管的导通部分的部分或整个部分期间将施加到所述转移晶体管的栅极的导通电压控制为低于浮置扩散节点电压加上所述转移晶体管的阈值电压 转移晶体管使得转移晶体管以伪夹断模式工作。
    • 43. 发明授权
    • Contact structure of a wires and method manufacturing the same, and thin film transistor substrate including the contact structure and method manufacturing the same
    • 电线的接触结构及其制造方法,以及包括接触结构的薄膜晶体管基板及其制造方法
    • US07659625B2
    • 2010-02-09
    • US12333973
    • 2008-12-12
    • Seung-Taek LimMun-Pyo HongNam-Seok RohYoung-Joo SongSang-Ki KwakKwon-Young ChoiKeun-Kyu Song
    • Seung-Taek LimMun-Pyo HongNam-Seok RohYoung-Joo SongSang-Ki KwakKwon-Young ChoiKeun-Kyu Song
    • H01L23/48
    • G02F1/13458G02F1/136227G02F1/136286G02F2001/13629H01L21/76805H01L21/76816H01L23/53223H01L27/124H01L2924/0002H01L2924/00
    • In a method of fabricating a thin film transistor array substrate for a liquid crystal display, a gate line assembly is formed on a substrate with a chrome-based under-layer and an aluminum alloy-based over-layer while proceeding in the horizontal direction. The gate line assembly has gate lines, and gate electrodes, and gate pads. A gate insulating layer is deposited onto the insulating substrate such that the gate insulating layer covers the gate line assembly. A semiconductor layer and an ohmic contact layer are sequentially formed on the gate insulating layer. A data line assembly is formed on the ohmic contact layer with a chrome-based under-layer and an aluminum alloy-based over-layer. The data line assembly has data lines crossing over the gate lines, source electrodes, drain electrodes, and data pads. A protective layer is deposited onto the substrate, and patterned to thereby form contact holes exposing the drain electrodes, the gate pads, and the data pads. The sidewall of the under-layers for the gate line assembly and the data line assembly is exposed through the contact holes. An IZO-based layer is deposited onto the substrate, and patterned to thereby form pixel electrodes, subsidiary gate pads, and subsidiary data pads. The pixel electrodes are connected to the sidewall of the drain electrodes, and the subsidiary gate and data pads are connected to the sidewall of the gate and the data pads.
    • 在制造用于液晶显示器的薄膜晶体管阵列基板的方法中,栅极线组件在沿水平方向前进的基底上形成有铬基底层和基于铝合金的超层。 栅极线组件具有栅极线,栅电极和栅极焊盘。 栅极绝缘层沉积在绝缘基板上,使得栅极绝缘层覆盖栅极线组件。 在栅极绝缘层上依次形成半导体层和欧姆接触层。 数据线组件在欧姆接触层上形成有铬基底层和基于铝合金的超层。 数据线组件具有跨越栅极线,源电极,漏电极和数据焊盘的数据线。 保护层沉积到衬底上,并被图案化,从而形成露出漏电极,栅极焊盘和数据焊盘的接触孔。 用于栅极线组件和数据线组件的下层的侧壁通过接触孔暴露。 将基于IZO的层沉积到衬底上并构图,从而形成像素电极,辅助栅极焊盘和辅助数据焊盘。 像素电极连接到漏电极的侧壁,辅助栅极和数据焊盘连接到栅极和数据焊盘的侧壁。
    • 47. 发明申请
    • CMOS image sensor
    • CMOS图像传感器
    • US20060108613A1
    • 2006-05-25
    • US11166639
    • 2005-06-24
    • Young Joo SongBong MheenJin Kang
    • Young Joo SongBong MheenJin Kang
    • H01L27/148
    • H01L27/14603H01L27/14601
    • Provided is a CMOS image sensor including a pinned photodiode and a transfer transistor. The CMOS image sensor includes: a substrate; a gate electrode disposed on the substrate and electrically isolated from the substrate by a gate insulating layer; a first floating region disposed in the substrate of one side of the gate electrode; a first impurity region for a photodiode disposed in the substrate of the other side of the gate electrode; a second floating region disposed in the substrate between the first impurity region for the photodiode and the gate electrode; and a second impurity region for the photodiode disposed in a surface portion of the substrate including the first impurity region for the photodiode and the second floating region.
    • 提供了包括钉扎光电二极管和转移晶体管的CMOS图像传感器。 CMOS图像传感器包括:基板; 栅电极,设置在所述基板上,并通过栅极绝缘层与所述基板电隔离; 设置在所述栅电极的一侧的基板中的第一浮置区域; 用于设置在栅极电极的另一侧的基板中的光电二极管的第一杂质区域; 布置在所述基板中的用于所述光电二极管的所述第一杂质区域和所述栅电极之间的第二浮置区域; 以及用于光电二极管的第二杂质区域,设置在包括用于光电二极管的第一杂质区域和第二浮动区域的基板的表面部分中。
    • 49. 发明授权
    • Fryer
    • 炸锅
    • US06363840B1
    • 2002-04-02
    • US09925350
    • 2001-08-09
    • Young Joo Song
    • Young Joo Song
    • A47J3700
    • A47J37/1285A47J37/1223Y10S210/08
    • The present invention relates to a fryer that can supply suitable moisture for oil therein, as well as refine the used oil conveniently. The oil contained a frying vessel can keep sufficient moisture through two connecting pipes connected with both the frying vessel and a water vessel, by sharing the water during flow or by difference of pressure of water head and oil head and the difference of specific gravity between two materials. The fryer also can refine and recycle the used oil so that the foods to be fried can be fried with fresh oil always.
    • 本发明涉及一种可以为其中的油提供合适的水分的油炸锅,以及方便地改良废油。 油包含的油炸容器可以通过与油炸容器和水容器连接的两个连接管保持足够的水分,通过在流动期间共享水或通过水头和油头的压力差和两者之间的比重差 材料 油炸锅还可以对二手油进行精炼和再循环,使油炸的食物始终能用新鲜油炸。