专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US10333026B2 Lateral light emitting diode device and method for fabricating the same 有权
公开(公告)号：US10333026B2
公开(公告)日：2019-06-25
申请号：US15629020
申请日：2017-06-21
申请人： Tae Yeon Seong , Ki Seok Kim , Sung-joo Song
发明人： Tae Yeon Seong , Ki Seok Kim , Sung-joo Song
IPC分类号： H01L33/10 , H01L33/00 , H01L33/32 , H01L33/20 , H01L33/38
摘要： Provided are a lateral light emitting diode device and a method for fabricating the same. The lateral light emitting diode device includes a substrate; an n-type GaN layer disposed on the substrate; an activation layer disposed on the n-type GaN layer; a p-type GaN layer disposed on the activation layer, a plurality of holes being formed in the p-type GaN layer; a current spreading layer disposed on the p-type GaN layer; a p-electrode disposed on the current spreading layer; a seed layer disposed on bottom surfaces of the plurality of holes; metal oxide structures grown on the seed layer in a crystalline state to fill the plurality of holes; and an n-electrode disposed on the n-type GaN layer exposed by removing portions of the current spreading layer, the p-type GaN layer, the activation layer, and the n-type GaN layer.

2. 发明授权

US08642369B2 Vertically structured LED by integrating nitride semiconductors with Zn(Mg,Cd,Be)O(S,Se) and method for making same 有权
标题翻译：将氮化物半导体与Zn（Mg，Cd，Be）O（S，Se）相结合的垂直结构的LED及其制造方法
公开(公告)号：US08642369B2
公开(公告)日：2014-02-04
申请号：US12397224
申请日：2009-03-03
申请人： Jizhi Zhang , Jin Joo Song
发明人： Jizhi Zhang , Jin Joo Song
IPC分类号： H01L21/00
CPC分类号： H01L33/0025 , H01L21/0242 , H01L21/02554 , H01L21/02557 , H01L21/0256 , H01L21/02565 , H01L21/02568 , H01L33/0079 , H01L33/08 , H01L33/26 , H01L33/32 , H01L33/40 , H01L33/46 , H01L33/504
摘要： A light emitting diode (LED) with a vertical structure, including electrical contacts on opposing sides, provides increased brightness. In some embodiments an LED includes a nitride semiconductor light emitting component grown on a sapphire substrate, a Zn(Mg,Cd,Be)O(S,Se) assembly formed on the nitride semiconductor component, and a further Zn(Mg Cd,Be)O(S,Se) assembly bonded on an opposing side of the light emitting component, which is exposed by removing the sapphire substrate. Electrical contacts may be connected to the Zn(Mg,Cd,Be)O(S,Se) assembly and the further Zn(Mg,Cd,Be)O(S,Se) assembly. Herein Zn(Mg,Cd,Be)O(S,Se) is a II-VI semiconductor satisfying a formula Zn1−a−b−cMgaCdbBecO1−p−qSpSeq, wherein a=0˜1, b=0˜1, c=0˜1, p=0˜1, and q=0˜1.
摘要翻译：具有垂直结构的发光二极管（LED）包括相对侧上的电触点，提供增加的亮度。在一些实施例中，LED包括在蓝宝石衬底上生长的氮化物半导体发光元件，形成在氮化物半导体元件上的Zn（Mg，Cd，Be）O（S，Se）组件，以及另外的Zn（Mg Cd，Be ）O（S，Se）组件，其结合在通过去除蓝宝石衬底而暴露的发光部件的相对侧上。电触点可以连接到Zn（Mg，Cd，Be）O（S，Se）组件和另外的Zn（Mg，Cd，Be）O（S，Se）组件。其中Zn（Mg，Cd，Be）O（S，Se）是满足式Zn1-ab-cMgaCdbBecO1-p-qSpSeq的II-VI族半导体，其中a = 0〜1，b = 0〜1，c = 0 〜1，p = 0〜1，q = 0〜1。

3. 发明授权

US08442121B2 Method, apparatus and system for controlling a scene structure of multiple channels to be displayed on a mobile terminal in a mobile broadcast system 有权
标题翻译：用于控制要在移动广播系统中的移动终端上显示的多个频道的场景结构的方法，装置和系统
公开(公告)号：US08442121B2
公开(公告)日：2013-05-14
申请号：US11581058
申请日：2006-10-16
申请人： Young-Joo Song , Ki-Ho Jung , Young-Kwon Lim , Je-Chang Jeong , Kook-Heui Lee
发明人： Young-Joo Song , Ki-Ho Jung , Young-Kwon Lim , Je-Chang Jeong , Kook-Heui Lee
IPC分类号： H04N7/12 , H04N11/02 , H04N11/04 , H04N5/45 , H04N7/173 , H04L12/56
CPC分类号： H04N19/61 , H04N21/23412 , H04N21/234318 , H04N21/235 , H04N21/41407 , H04N21/4307 , H04N21/4316 , H04N21/435 , H04N21/44012 , H04N21/8543
摘要： A method, apparatus and system are provided for controlling a scene structure of a mobile terminal for receiving and displaying data streams in a mobile broadcast system. When logical channels are multiplexed into one physical channel, the multiplexed channels are sequentially decoded and are displayed on an image. A channel circulation scene alternately displays the channels on one image in designated order. In a combination scene structure, a new node is added to a conventional Lightweight Application Scene Representation (LASeR) technology. To compose a scene, fields for time information and scene transition effect are provided. A delay time due to a channel change is reduced. A multi-channel image is effectively provided to address a problem when a user retrieves service content while directly switching a channel. The terminal dynamically composes the multi-channel image using stream source node information from a service provider without an additional mosaic channel.
摘要翻译：提供了一种用于控制用于在移动广播系统中接收和显示数据流的移动终端的场景结构的方法，装置和系统。当逻辑信道被复用到一个物理信道中时，多路复用的信道被顺序解码并显示在图像上。频道循环场景以指定的顺序交替显示一幅图像上的频道。在组合场景结构中，将新节点添加到常规轻量级应用场景表示（LASeR）技术中。要组合场景，提供时间信息和场景转换效果的字段。由于通道改变引起的延迟时间减少。当用户在直接切换频道的同时检索服务内容时，有效地提供多通道图像来解决问题。终端使用来自服务提供商的流源节点信息来动态地组合多声道图像，而没有附加的马赛克通道。

4. 发明授权

US08169010B2 Low-voltage image sensor with sensing control unit formed within 有权
标题翻译：低压图像传感器与感应控制单元组成
公开(公告)号：US08169010B2
公开(公告)日：2012-05-01
申请号：US11932922
申请日：2007-10-31
申请人： Mi Jin Kim , Bong Ki Mheen , Young Joo Song , Seong Su Park
发明人： Mi Jin Kim , Bong Ki Mheen , Young Joo Song , Seong Su Park
IPC分类号： H01L31/00
CPC分类号： H01L27/14609 , H04N5/235 , H04N5/3559 , H04N5/3597 , H04N5/374
摘要： Provided are an image sensor and a method of sensing the same. The image sensor includes: a light receiving device; a signal conversion unit including a transfer transistor having a plurality of transfer gates and for converting photocharges generated by the light receiving device into a voltage to output the voltage; and a sensing control unit for generating at least two reset signals and/or at least two transfer signals applied to the transfer gates of the transfer transistor during a one-time photosensing cycle. The image sensor is obtained by changing the structure and driving method of a transfer transistor of a typical 4-transistor CMOS image sensor and employs a deep depletion operation and a multiple reset operation, thereby reducing an image lag and increasing the well capacity of the light receiving device.
摘要翻译：提供了一种图像传感器及其感测方法。图像传感器包括：光接收装置; 信号转换单元，包括具有多个传输门并将由光接收装置产生的光电荷转换成电压以输出电压的传输晶体管; 以及感测控制单元，用于在一次光敏周期期间产生施加到传输晶体管的传输门的至少两个复位信号和/或至少两个传输信号。图像传感器通过改变典型的4晶体管CMOS图像传感器的传输晶体管的结构和驱动方法获得，并且采用深度耗尽操作和多重复位操作，从而减少图像滞后并增加光阱的容量接收设备。

5. 发明授权

US08158031B2 Method for preparing metal nanoparticles using metal seed and metal nanoparticles comprising metal seed 有权
标题翻译：使用金属种子制备金属纳米颗粒的方法和包含金属种子的金属纳米颗粒
公开(公告)号：US08158031B2
公开(公告)日：2012-04-17
申请号：US12437634
申请日：2009-05-08
申请人： Kwi-Jong Lee , Hyun-Joo Song , Dae-Ha Seo , Jong-Wook Jung , Dong-Hoon Kim
发明人： Kwi-Jong Lee , Hyun-Joo Song , Dae-Ha Seo , Jong-Wook Jung , Dong-Hoon Kim
IPC分类号： H01B1/22
CPC分类号： B22F1/025 , B22F9/24 , C09D11/52 , H01L24/02 , H01L2924/01012 , H01L2924/01019 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , Y10T428/12181 , H01L2924/00
摘要： It provides a method for preparing metal nanoparticles using a metal seed and metal nanoparticles including the metal seed, the method including: preparing a solution by adding a polymer surfactant in an alcohol solvent; heating the solution; forming a metal seed by adding a first metal salt of at least one metal salt selected from the group consisting of platinum, palladium and iridium in the heated solution; and adding a second metal salt into the solution including the metal seed. This method allows the production of uniform-sized nanoparticles under high concentration conditions in high yield and mass production in which the metal nanoparticles have high dispersion stability so that they are suitable for various application.
摘要翻译：它提供了一种使用金属种子和包括金属种子的金属纳米颗粒制备金属纳米颗粒的方法，所述方法包括：通过在醇溶剂中加入聚合物表面活性剂来制备溶液; 加热溶液; 通过在加热的溶液中加入选自铂，钯和铱的至少一种金属盐的第一金属盐形成金属种子; 并向包含金属种子的溶液中加入第二金属盐。该方法允许在高产率和大批量生产的高浓度条件下生产均匀尺寸的纳米颗粒，其中金属纳米颗粒具有高的分散稳定性，使得它们适用于各种应用。

6. 发明授权

US07829834B2 Low-voltage image sensor having multiple gates between a photodiode and a diffusion node for suppressing dark current and method of driving transfer transistor thereof 有权
标题翻译：具有用于抑制暗电流的光电二极管和扩散节点之间的多个栅极的低电压图像传感器及其驱动传输晶体管的方法
公开(公告)号：US07829834B2
公开(公告)日：2010-11-09
申请号：US11875513
申请日：2007-10-19
申请人： Mi Jin Kim , Bong Ki Mheen , Young Joo Song , Seong Su Park
发明人： Mi Jin Kim , Bong Ki Mheen , Young Joo Song , Seong Su Park
IPC分类号： H01L27/00 , H01J40/14 , H04N3/14
CPC分类号： H01L27/14603 , H01L27/14609 , H04N5/361 , H04N5/365 , H04N5/3745
摘要： Provided are a low-voltage image sensor and a method of driving a transfer transistor thereof, which are obtained by changing the structure and driving method of a typical transfer transistor of a 4-transistor CMOS transistor, and can eliminate the influence of a voltage or physical structure of a diffusion node on a reset or transfer operation of a photodiode. The image sensor includes a light receiving device for detecting light and a signal conversion unit for reading photocharge generated by the light receiving device to an external circuit. The signal conversion unit includes a transfer transistor including at least two gate electrodes. When the photocharge is transferred to a channel of a transfer gate electrode disposed closest to a photodiode, a transfer gate electrode disposed adjacent to a diffusion node remains turned off.
摘要翻译：提供了通过改变4晶体管CMOS晶体管的典型转移晶体管的结构和驱动方法获得的低压图像传感器和驱动其传输晶体管的方法，并且可以消除电压或在光电二极管复位或传输操作时扩散节点的物理结构。图像传感器包括用于检测光的光接收装置和用于将由光接收装置产生的光电荷读取到外部电路的信号转换单元。信号转换单元包括至少两个栅电极的转移晶体管。当光电荷转移到最靠近光电二极管设置的传输栅电极的沟道时，与扩散节点相邻设置的传输栅电极保持关闭。

7. 发明申请

US20100096176A1 CONTACT STRUCTURE OF A WIRES AND METHOD MANUFACTURING THE SAME, AND THIN FILM TRANSISTOR SUBSTRATE INCLUDING THE CONTACT STRUCTURE AND METHOD MANUFACTURING THE SAME 审中-公开
标题翻译：一种线的接触结构及其制造方法，以及包括接触结构的薄膜晶体管基板及其制造方法
公开(公告)号：US20100096176A1
公开(公告)日：2010-04-22
申请号：US12645458
申请日：2009-12-22
申请人： Seung-Taek LIM , Mun-Pyo Hong , Nam-Seok Roh , Young-Joo Song , Sang-Ki Kwak , Kwon-Young Choi , Keun-Kyu Song
发明人： Seung-Taek LIM , Mun-Pyo Hong , Nam-Seok Roh , Young-Joo Song , Sang-Ki Kwak , Kwon-Young Choi , Keun-Kyu Song
IPC分类号： H05K1/11
CPC分类号： G02F1/13458 , G02F1/136227 , G02F1/136286 , G02F2001/13629 , H01L21/76805 , H01L21/76816 , H01L23/53223 , H01L27/124 , H01L2924/0002 , H01L2924/00
摘要： In a method of fabricating a thin film transistor array substrate for a liquid crystal display, a gate line assembly is formed on a substrate with a chrome-based under-layer and an aluminum alloy-based over-layer while proceeding in the horizontal direction. The gate line assembly has gate lines, and gate electrodes, and gate pads. A gate insulating layer is deposited onto the insulating substrate such that the gate insulating layer covers the gate line assembly. A semiconductor layer and an ohmic contact layer are sequentially formed on the gate insulating layer. A data line assembly is formed on the ohmic contact layer with a chrome-based under-layer and an aluminum alloy-based over-layer. The data line assembly has data lines crossing over the gate lines, source electrodes, drain electrodes, and data pads. A protective layer is deposited onto the substrate, and patterned to thereby form contact holes exposing the drain electrodes, the gate pads, and the data pads. The sidewall of the under-layers for the gate line assembly and the data line assembly is exposed through the contact holes. An IZO-based layer is deposited onto the substrate, and patterned to thereby form pixel electrodes, subsidiary gate pads, and subsidiary data pads. The pixel electrodes are connected to the sidewall of the drain electrodes, and the subsidiary gate and data pads are connected to the sidewall of the gate and the data pads.
摘要翻译：在制造用于液晶显示器的薄膜晶体管阵列基板的方法中，栅极线组件在沿水平方向前进的基底上形成有铬基底层和基于铝合金的超层。栅极线组件具有栅极线，栅电极和栅极焊盘。栅极绝缘层沉积在绝缘基板上，使得栅极绝缘层覆盖栅极线组件。在栅极绝缘层上依次形成半导体层和欧姆接触层。数据线组件在欧姆接触层上形成有铬基底层和基于铝合金的超层。数据线组件具有跨越栅极线，源电极，漏电极和数据焊盘的数据线。保护层沉积到衬底上，并被图案化，从而形成露出漏电极，栅极焊盘和数据焊盘的接触孔。用于栅极线组件和数据线组件的下层的侧壁通过接触孔暴露。将基于IZO的层沉积到衬底上并构图，从而形成像素电极，辅助栅极焊盘和辅助数据焊盘。像素电极连接到漏电极的侧壁，辅助栅极和数据焊盘连接到栅极和数据焊盘的侧壁。

8. 发明申请

US20100072434A1 METHOD FOR PREPARING METAL NANOPARTICLES USING MATAL SEED AND METAL NANOPARTICLES COMPRISING METAL SEED 有权
标题翻译：使用包含金属种子的正常种子和金属纳米颗粒制备金属纳米颗粒的方法
公开(公告)号：US20100072434A1
公开(公告)日：2010-03-25
申请号：US12437634
申请日：2009-05-08
申请人： Kwi-Jong Lee , Hyun-Joo Song , Dae-Ha Seo , Jong-Wook Jung , Dong-Hoon Kim
发明人： Kwi-Jong Lee , Hyun-Joo Song , Dae-Ha Seo , Jong-Wook Jung , Dong-Hoon Kim
IPC分类号： H01B1/22 , B22F9/16 , B22F1/02 , B01F3/12
CPC分类号： B22F1/025 , B22F9/24 , C09D11/52 , H01L24/02 , H01L2924/01012 , H01L2924/01019 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , Y10T428/12181 , H01L2924/00
摘要： It provides a method for preparing metal nanoparticles using a metal seed and metal nanoparticles including the metal seed, the method including: preparing a solution by adding a polymer surfactant in an alcohol solvent; heating the solution; forming a metal seed by adding a first metal salt of at least one metal salt selected from the group consisting of platinum, palladium and iridium in the heated solution; and adding a second metal salt into the solution including the metal seed. This method allows the production of uniform-sized nanoparticles under high concentration conditions in high yield and mass production in which the metal nanoparticles have high dispersion stability so that they are suitable for various application.
摘要翻译：它提供了一种使用金属种子和包括金属种子的金属纳米颗粒制备金属纳米颗粒的方法，所述方法包括：通过在醇溶剂中加入聚合物表面活性剂来制备溶液; 加热溶液; 通过在加热的溶液中加入选自铂，钯和铱的至少一种金属盐的第一金属盐形成金属种子; 并向包含金属种子的溶液中加入第二金属盐。该方法允许在高产率和大批量生产的高浓度条件下生产均匀尺寸的纳米颗粒，其中金属纳米颗粒具有高的分散稳定性，使得它们适用于各种应用。

9. 发明授权

US07554074B2 Image sensor for low-noise voltage operation 有权
标题翻译：用于低噪声电压操作的图像传感器
公开(公告)号：US07554074B2
公开(公告)日：2009-06-30
申请号：US11866698
申请日：2007-10-03
申请人： Bong Ki Mheen , Min Hyung Cho , Mi Jin Kim , Young Joo Song
发明人： Bong Ki Mheen , Min Hyung Cho , Mi Jin Kim , Young Joo Song
IPC分类号： H03F3/08 , H01L27/00 , H04N3/14
CPC分类号： H04N5/3745 , H01L27/14603 , H01L27/14609 , H04N5/361
摘要： An image sensor operated in a pseudo pinch-off condition capable of reducing a reset voltage of a photodiode and reducing a dark current and fixed pattern noise generated due to discordance of characteristics between pixels is presented. The image sensor has a photosensitive pixel, a driving circuit and an intermediary circuit. The photosensitive pixel can have a photodiode generating a photoelectrons, a transfer transistor transferring the photoelectrons to a diffusion node, and a reset transistor resetting the diffusion node. The driving circuit generates a driving switching signal with respect to the transfer and resist transistors. The intermediary circuit changes characteristics of the signal to drive the photosensitive pixel in a pseudo pinch-off mode.
摘要翻译：提供了一种以能够减少光电二极管的复位电压并且减少由于像素之间的特性不一致而产生的暗电流和固定图案噪声的伪夹断条件操作的图像传感器。图像传感器具有光敏像素，驱动电路和中间电路。感光像素可以具有产生光电子的光电二极管，将光电子传输到扩散节点的转移晶体管以及复位扩散节点的复位晶体管。驱动电路相对于转移和抗蚀剂晶体管产生驱动切换信号。中间电路改变信号的特性以在伪夹断模式下驱动光敏像素。

10. 发明申请

US20090096105A1 CONTACT STRUCTURE OF A WIRES AND METHOD MANUFACTURING THE SAME, AND THIN FILM TRANSISTOR SUBSTRATE INCLUDING THE CONTACT STRUCTURE AND METHOD MANUFACTURING THE SAME 有权
标题翻译：一种线的接触结构及其制造方法，以及包括接触结构的薄膜晶体管基板及其制造方法
公开(公告)号：US20090096105A1
公开(公告)日：2009-04-16
申请号：US12333973
申请日：2008-12-12
申请人： Seung-Taek LIM , Mun-Pyo Hong , Nam-Seok Roh , Young-Joo Song , Sang-Ki Kwak , Kwon-Young Choi , Keun-Kyu Song
发明人： Seung-Taek LIM , Mun-Pyo Hong , Nam-Seok Roh , Young-Joo Song , Sang-Ki Kwak , Kwon-Young Choi , Keun-Kyu Song
IPC分类号： H01L23/48 , H01L23/52
CPC分类号： G02F1/13458 , G02F1/136227 , G02F1/136286 , G02F2001/13629 , H01L21/76805 , H01L21/76816 , H01L23/53223 , H01L27/124 , H01L2924/0002 , H01L2924/00
摘要： In a method of fabricating a thin film transistor array substrate for a liquid crystal display, a gate line assembly is formed on a substrate with a chrome-based under-layer and an aluminum alloy-based over-layer while proceeding in the horizontal direction. The gate line assembly has gate lines, and gate electrodes, and gate pads. A gate insulating layer is deposited onto the insulating substrate such that the gate insulating layer covers the gate line assembly. A semiconductor layer and an ohmic contact layer are sequentially formed on the gate insulating layer. A data line assembly is formed on the ohmic contact layer with a chrome-based under-layer and an aluminum alloy-based over-layer. The data line assembly has data lines crossing over the gate lines, source electrodes, drain electrodes, and data pads. A protective layer is deposited onto the substrate, and patterned to thereby form contact holes exposing the drain electrodes, the gate pads, and the data pads. The sidewall of the under-layers for the gate line assembly and the data line assembly is exposed through the contact holes. An IZO-based layer is deposited onto the substrate, and patterned to thereby form pixel electrodes, subsidiary gate pads, and subsidiary data pads. The pixel electrodes are connected to the sidewall of the drain electrodes, and the subsidiary gate and data pads are connected to the sidewall of the gate and the data pads.
摘要翻译：在制造用于液晶显示器的薄膜晶体管阵列基板的方法中，栅极线组件在沿水平方向前进的基底上形成有铬基底层和基于铝合金的超层。栅极线组件具有栅极线，栅电极和栅极焊盘。栅极绝缘层沉积在绝缘基板上，使得栅极绝缘层覆盖栅极线组件。在栅极绝缘层上依次形成半导体层和欧姆接触层。数据线组件在欧姆接触层上形成有铬基底层和基于铝合金的超层。数据线组件具有跨越栅极线，源电极，漏电极和数据焊盘的数据线。保护层沉积到衬底上，并被图案化，从而形成露出漏电极，栅极焊盘和数据焊盘的接触孔。用于栅极线组件和数据线组件的下层的侧壁通过接触孔暴露。将基于IZO的层沉积到衬底上并构图，从而形成像素电极，辅助栅极焊盘和辅助数据焊盘。像素电极连接到漏电极的侧壁，辅助栅极和数据焊盘连接到栅极和数据焊盘的侧壁。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式