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41. 发明授权

US08119430B2 Method of manufacturing semiconductor nanowire sensor device and semiconductor nanowire sensor device manufactured according to the method 有权
标题翻译：根据该方法制造半导体纳米线传感器器件和半导体纳米线传感器器件的方法
公开(公告)号：US08119430B2
公开(公告)日：2012-02-21
申请号：US12494846
申请日：2009-06-30
申请人： Chan-Woo Park , Chang-Geun Ahn , Jong-Heon Yang , In-Bok Baek , Chil-Seong Ah , An-Soon Kim , Tae-Youb Kim , Gun-Yong Sung , Seon-Hee Park
发明人： Chan-Woo Park , Chang-Geun Ahn , Jong-Heon Yang , In-Bok Baek , Chil-Seong Ah , An-Soon Kim , Tae-Youb Kim , Gun-Yong Sung , Seon-Hee Park
IPC分类号： H01L21/00
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y15/00 , G01N27/127 , H01L29/0673 , H01L29/66439 , H01L29/772 , Y10S977/959
摘要： Provided are a method of manufacturing a semiconductor nanowire sensor device and a semiconductor nanowire sensor device manufactured according to the method. The method includes preparing a first conductive type single crystal semiconductor substrate, forming a line-shaped first conductive type single crystal pattern from the first conductive type single crystal semiconductor substrate, forming second conductive type epitaxial patterns on both sidewalls of the first conductive type single crystal pattern, and forming source and drain electrodes at both ends of the second conductive type epitaxial patterns.
摘要翻译：提供一种制造根据该方法制造的半导体纳米线传感器装置和半导体纳米线传感器装置的方法。该方法包括：制备第一导电型单晶半导体衬底，从第一导电型单晶半导体衬底形成线状第一导电型单晶图案，在第一导电型单晶体的两个侧壁上形成第二导电型外延图案图案，并且在第二导电型外延图案的两端形成源电极和漏电极。

42. 发明申请

US20110151139A1 METHOD FOR SELECTIVELY FUNCTIONALIZING NON-MODIFIED SOLID SURFACE AND METHOD FOR IMMOBILIZING ACTIVE MATERIAL ON THE FUNCTIONALIZED SOLID SURFACE 审中-公开
标题翻译：用于选择性地功能化非改性固体表面的方法和在功能化固体表面上固定活性材料的方法
公开(公告)号：US20110151139A1
公开(公告)日：2011-06-23
申请号：US12944655
申请日：2010-11-11
申请人： An Soon KIM , Wan Joong Kim , Chil Seong Ah , Chan Woo Park , Jong Heon Yang , Tae Youb Kim , Chang Geun Ahn , Gun Yong Sung
发明人： An Soon KIM , Wan Joong Kim , Chil Seong Ah , Chan Woo Park , Jong Heon Yang , Tae Youb Kim , Chang Geun Ahn , Gun Yong Sung
IPC分类号： B05D3/06 , B05D3/00 , B05D3/10
CPC分类号： G01N33/54353 , B01J2219/00612 , B01J2219/00637 , B01J2219/00725
摘要： A method for selectively functionalizing a non-modified solid surface to create a photoresponsive coating layer includes: functionalizing a non-modified solid surface only, which is not oxidized and nitrified, with hydrogen; forming an EGPA coating layer on the non-modified solid surface functionalized with hydrogen using light; forming an EGA coating layer by removing an amine protecting group or an amine salt from the EGPA coating layer; and forming a coating layer having a photoresponsive functional group on the non-modified solid surface using the EGA coating layer.
摘要翻译：用于选择性官能化未改性固体表面以产生光响应涂层的方法包括：仅使用氢氧化和硝化官能化未改性的固体表面; 在使用光官能化的非改性固体表面上形成EGPA涂层; 通过从EGPA涂层去除胺保护基或胺盐形成EGA涂层; 并且使用所述EGA涂层在所述未改性固体表面上形成具有光响应性官能团的涂层。

43. 发明授权

US07947585B2 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07947585B2
公开(公告)日：2011-05-24
申请号：US12090891
申请日：2006-12-04
申请人： In Bok Baek , Seong Jae Lee , Jong Heon Yang , Chang Geun Ahn , Han Young Yu , Ki Ju Im
发明人： In Bok Baek , Seong Jae Lee , Jong Heon Yang , Chang Geun Ahn , Han Young Yu , Ki Ju Im
IPC分类号： H01L21/22
CPC分类号： H01L29/66439 , B82Y10/00 , H01L21/0273 , H01L21/28123 , H01L29/66484 , H01L29/66545 , H01L29/66575 , H01L29/66772 , H01L29/7613 , H01L29/7831
摘要： Provided is a method of manufacturing a semiconductor device in which properties of photoresist through a lithography process are changed to form a dummy structure, and the structure is applied to a process of forming a gate electrode. The method includes the steps of: forming a buffer layer on the top of a semiconductor substrate; applying an inorganic photoresist on the buffer layer, and forming a photoresist pattern using a lithography process; thermally treating the photoresist pattern using a predetermined gas; uniformly depositing an insulating layer on the thermally treated structure, and etching the deposited layer by the deposited thickness in order to expose the thermally treated photoresist pattern; depositing an insulating layer on the etched structure, and etching the deposited insulating layer to expose the thermally treated photoresist pattern; removing the exposed photoresist pattern using an etching process; forming a gate oxide layer in the portion in which the photoresist pattern is removed; and forming a gate electrode on the gate oxide layer. Accordingly, in forming a structure for manufacturing a nano-sized device, the properties of the layer formed by a lithography process are improved through thermal treatment, and thus the structure used to manufacture various devices can be easily formed.
摘要翻译：提供了通过光刻处理改变光致抗蚀剂的特性以形成虚拟结构的半导体器件的制造方法，并且将该结构应用于形成栅电极的工艺。该方法包括以下步骤：在半导体衬底的顶部上形成缓冲层; 在缓冲层上施加无机光致抗蚀剂，并使用光刻工艺形成光致抗蚀剂图案; 使用预定气体热处理光刻胶图案; 在热处理结构上均匀沉积绝缘层，并通过沉积的厚度蚀刻沉积层，以暴露热处理的光致抗蚀剂图案; 在蚀刻的结构上沉积绝缘层，并蚀刻沉积的绝缘层以暴露热处理的光致抗蚀剂图案; 使用蚀刻工艺去除曝光的光致抗蚀剂图案; 在除去光致抗蚀剂图案的部分中形成栅氧化层; 以及在所述栅极氧化物层上形成栅电极。因此，在形成纳米尺寸器件的制造结构时，通过热处理提高了通过光刻工艺形成的层的性质，因此可以容易地形成用于制造各种器件的结构。

44. 发明申请

US20100090254A1 BIOSENSOR AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：生物传感器及其制造方法
公开(公告)号：US20100090254A1
公开(公告)日：2010-04-15
申请号：US12517553
申请日：2007-11-22
申请人： Chang-Geun Ahn , Seongjae Lee , Jong-Heon Yang , In-Bok Baek , Han-Young Yu , Chil-Seong Ah , Ansoon Kim , Chan-Woo Park , Seon-Hee Park , Taehyoung Zyung
发明人： Chang-Geun Ahn , Seongjae Lee , Jong-Heon Yang , In-Bok Baek , Han-Young Yu , Chil-Seong Ah , Ansoon Kim , Chan-Woo Park , Seon-Hee Park , Taehyoung Zyung
IPC分类号： H01L29/66 , H01L21/04
CPC分类号： G01N33/5438 , G01N27/4145
摘要： Provided is a biosensor which can detect a specific biomaterial by an interaction between target molecules and probe molecules, and a manufacturing method thereof. The biosensor includes: a first conductive semiconductor substrate; a second conductive doping layer formed on the semiconductor substrate; an electrode formed on top of both opposite ends of the doping layer; and probe molecules immobilized on the doping layer.
摘要翻译：本发明提供能够通过靶分子和探针分子之间的相互作用检测特定生物材料的生物传感器及其制造方法。生物传感器包括：第一导电半导体衬底; 形成在所述半导体衬底上的第二导电掺杂层; 形成在所述掺杂层的两相对端的顶部上的电极; 和固定在掺杂层上的探针分子。

45. 发明申请

US20100050866A1 NANOWIRE FILTER, METHOD FOR MANUFACTURING THE SAME, METHOD FOR REMOVING MATERIAL ABSORBED THEREON, AND FILTERING APPARATUS HAVING THE SAME 审中-公开
标题翻译：纳米过滤器，其制造方法，用于移除吸收材料的方法以及具有其的过滤装置
公开(公告)号：US20100050866A1
公开(公告)日：2010-03-04
申请号：US12443341
申请日：2007-09-20
申请人： Han-Young Yu , An-Soon Kim , Chil-Seong Ah , In-Bok Baek , Jong-Heon Yang , Chang-Geun Ahn , Seong-Jae Lee , Tae-Hyoung Zyung
发明人： Han-Young Yu , An-Soon Kim , Chil-Seong Ah , In-Bok Baek , Jong-Heon Yang , Chang-Geun Ahn , Seong-Jae Lee , Tae-Hyoung Zyung
IPC分类号： B01D46/46 , B01D53/04 , B32B37/02 , B05D5/00
CPC分类号： B01D46/0012 , B01D39/12 , B01D46/444 , B01D46/546 , B01D53/02 , B01D2239/025 , B01D2253/304 , B01D2257/70 , B01D2258/0216 , B01J20/02 , B01J20/0233 , B01J20/0237 , B01J20/024 , B01J20/0244 , B01J20/0248 , B01J20/0251 , B01J20/0259 , B01J20/0262 , B01J20/0266 , B01J20/0285 , B01J20/0288 , B01J20/04 , B01J20/06 , B01J20/20 , B01J20/28007 , B01J20/3204 , B01J20/3223 , B01J20/3234 , B01J20/3236 , B01J20/3295 , B01J20/3416 , B01J20/3433 , B01J20/3458 , B01J20/3483 , B01J2220/62 , B82Y30/00 , Y10T156/10
摘要： There are provided a nanowire filter, a method for manufacturing the same, a filtering apparatus having the same, and a method for removing material adsorbed on the nanowire filter. The filtering apparatus includes: a filter having a supporting member and a plurality of nanowires supported on the supporting member and arranged in a crystallized state; and a body into which the filter is inserted and secured, and which has an inlet for guiding an introduced fluid to the filter and an outlet for discharging the fluid filtered through the filter to the outside.
摘要翻译：提供了一种纳米线过滤器，其制造方法，具有该纳滤线过滤器的过滤装置以及用于去除吸附在纳米线过滤器上的材料的方法。过滤装置包括：过滤器，其具有支撑构件和支撑在支撑构件上并以结晶状态布置的多个纳米线; 以及其中插入和固定过滤器的主体，并且具有用于将引入的流体引导到过滤器的入口和用于将通过过滤器过滤的流体排出到外部的出口。

46. 发明申请

US20100015718A1 SUBSTRATE FOR ANALYZING COVERAGE OF SELF-ASSEMBLED MOLECULES AND ANALYZING METHOD USING THE SAME 审中-公开
标题翻译：用于分析自组装分子的覆盖的基板和使用其的分析方法
公开(公告)号：US20100015718A1
公开(公告)日：2010-01-21
申请号：US12517769
申请日：2007-11-26
申请人： Chil-Seong Ah , Ansoon Kim , Han-Young Yu , Chang-Geun Ahn , Jong-Heon Yang , In-Bok Baek , Chan-Woo Park , Seongjae Lee
发明人： Chil-Seong Ah , Ansoon Kim , Han-Young Yu , Chang-Geun Ahn , Jong-Heon Yang , In-Bok Baek , Chan-Woo Park , Seongjae Lee
IPC分类号： G01N33/00
CPC分类号： G01N33/5308 , C12Q1/6825 , G01N33/54313 , G01N33/54393 , Y10T436/143333
摘要： Provided are a substrate for analyzing the coverage of self-assembled molecules and a method for analyzing the coverage of the self-assembled molecules in nanowire and nanochannel patterned on solid surface, solid surface, or bulk solid surface by using the nanoparticles. According to the method, the presence of specific functional groups of self-assembled molecules and the degree of reaction can be analyzed by introducing nanoparticles to a biomaterial immobilization substrate including self-assembled molecules and measuring the number of gold nanoparticles existing on the surface. The substrate for analyzing the coverage of self-assembled molecules includes: a biomaterial immobilization substrate; a self-assembled molecular layer formed on the substrate and having a functional group capable of reacting with an amine group; a capture DNA molecule having an amine group bounded to the self-assembled molecular layer; and a probe DNA molecule bound to the capture DNA molecule and having nanoparticles attached to on the surface.
摘要翻译：本发明提供了一种用于分析自组装分子的覆盖物的底物以及通过使用纳米颗粒分析在固体表面，固体表面或体固体表面上图案化的纳米线和纳米通道中的自组装分子的覆盖率的方法。根据该方法，可以通过将纳米颗粒引入包括自组装分子的生物材料固定化基质并测量表面上存在的金纳米颗粒的数量来分析自组装分子的特定官能团的存在和反应程度。用于分析自组装分子的覆盖的底物包括：生物材料固定基质; 形成在基板上并具有能够与胺基反应的官能团的自组装分子层; 具有与自组装分子层结合的胺基的捕获DNA分子; 和与捕获DNA分子结合并且具有附着在表面上的纳米颗粒的探针DNA分子。

47. 发明申请

US20090152597A1 BIOSENSOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：生物传感器及其制造方法
公开(公告)号：US20090152597A1
公开(公告)日：2009-06-18
申请号：US12195305
申请日：2008-08-20
申请人： Tae Youb KIM , Nae Man Park , Han Young Yu , Moon Gyu Jang , Jong Heon Yang
发明人： Tae Youb KIM , Nae Man Park , Han Young Yu , Moon Gyu Jang , Jong Heon Yang
IPC分类号： H01L29/12 , H01L21/00
CPC分类号： G01N27/4146 , G01N27/4145 , Y10S977/71 , Y10S977/742 , Y10S977/963
摘要： Provided are a biosensor with a silicon nanowire and a method of manufacturing the same, and more particularly, a biosensor with a silicon nanowire including a defect region formed by irradiation of an electron beam, and a method of manufacturing the same. The biosensor includes: a silicon substrate; a source region disposed on the silicon substrate; a drain region disposed on the silicon substrate; and a silicon nanowire disposed on the source region and the drain region, and having a defect region formed by irradiation of an electron beam. Therefore, by irradiating a certain region of a high-concentration doped silicon nanowire with an electron beam to lower electron mobility in the certain region, it is possible to maintain a low contact resistance between the silicon nanowire and a metal electrode and to lower operation current of a biomaterial detection part, thereby improving sensitivity of the biosensor.
摘要翻译：本发明提供一种具有硅纳米线的生物传感器及其制造方法，更具体地，涉及具有通过电子束照射形成的缺陷区域的硅纳米线的生物传感器及其制造方法。生物传感器包括：硅衬底; 设置在所述硅基板上的源极区域; 设置在所述硅基板上的漏极区域; 以及设置在源极区域和漏极区域上的硅纳米线，并且具有通过电子束的照射而形成的缺陷区域。因此，通过用特定的区域照射具有电子束的高浓度掺杂的硅纳米线的特定区域来降低电子迁移率，可以保持硅纳米线与金属电极之间的低接触电阻并降低工作电流的生物材料检测部件，从而提高生物传感器的灵敏度。

48. 发明申请

US20060180867A1 Field effect transistor and method of fabricating the same 有权
公开(公告)号：US20060180867A1
公开(公告)日：2006-08-17
申请号：US11400520
申请日：2006-04-10
申请人： Won-ju Cho , Chang-geun Ahn , Ki-ju Im , Jong-heon Yang , In-bok Baek , Seong-jae Lee
发明人： Won-ju Cho , Chang-geun Ahn , Ki-ju Im , Jong-heon Yang , In-bok Baek , Seong-jae Lee
IPC分类号： H01L21/336 , H01L29/94
CPC分类号： H01L29/7835 , H01L29/41783 , H01L29/517 , H01L29/518 , H01L29/665 , H01L29/66659 , H01L29/7834
摘要： Provided are a field effect transistor and a method of fabricating the same, wherein the field effect transistor is formed which has a hyperfine channel length by employing a technique for forming a sidewall spacer and adjusting the deposition thickness of a thin film. In the field effect transistor of the present invention, a source junction and a drain junction are thin, and the overlap between the source and the gate and between the drain and the gate is prevented, thereby lowering parasitic resistance. Further, the gate electric field is easily introduced to the drain extending region, so that the carrier concentration is effectively controlled in the channel at the drain. Also, the drain extending region is formed to be thinner than the source, so that the short channel characteristic is excellent.

49. 发明授权

US08628650B2 Method and apparatus for measuring isoelectric point using field effect transistor 失效
标题翻译：使用场效应晶体管测量等电点的方法和装置
公开(公告)号：US08628650B2
公开(公告)日：2014-01-14
申请号：US13058120
申请日：2008-12-16
申请人： Chil Seong Ah , Ansoon Kim , Chan Woo Park , Chang-Geun Ahn , Jong-Heon Yang , In Bok Baek , Taeyoub Kim , Gun Yong Sung , Seon-Hee Park , Han Young Yu
发明人： Chil Seong Ah , Ansoon Kim , Chan Woo Park , Chang-Geun Ahn , Jong-Heon Yang , In Bok Baek , Taeyoub Kim , Gun Yong Sung , Seon-Hee Park , Han Young Yu
IPC分类号： B03C5/02
CPC分类号： G01N27/4145
摘要： Provided are a method and apparatus for measuring an isoelectric point using a field effect transistor. The method includes providing a field effect transistor including a substrate, source and drain electrodes disposed on the substrate and spaced apart from each other, and a channel region between the source and drain electrodes, providing a first electrolyte solution having a first concentration to the channel region of the field effect transistor and measuring a first current value of the channel region between the source and drain electrodes, providing a second electrolyte solution having a second concentration greater than the first concentration and measuring a second current value of the channel region between the source and drain electrodes, and determining the isoelectric point of the field effect transistor or a material disposed on the field effect transistor using a difference between the first and second current values.
摘要翻译：提供了使用场效应晶体管测量等电点的方法和装置。该方法包括提供场效应晶体管，该场效应晶体管包括衬底，设置在衬底上的源电极和漏极彼此间隔开的沟道区，以及在源电极和漏电极之间的沟道区域，提供具有第一浓度到沟道的第一电解质溶液区域，并且测量源极和漏极之间的沟道区的第一电流值，提供具有大于第一浓度的第二浓度的第二电解质溶液，并测量源极之间的沟道区的第二电流值和漏电极，并且使用第一和第二电流值之间的差来确定场效应晶体管的等电点或设置在场效应晶体管上的材料。

50. 发明授权

US08529750B2 Apparatus and method for detecting biomolecules 有权
标题翻译：用于检测生物分子的装置和方法
公开(公告)号：US08529750B2
公开(公告)日：2013-09-10
申请号：US13062146
申请日：2008-11-20
申请人： Chil-Seong Ah , Ansoon Kim , Chan-Woo Park , Chang-Geun Ahn , Jong-Heon Yang , In-Bok Baek , Taeyoub Kim , HyeKyoung Yang , Gun-Yong Sung , Seon-Hee Park , Han-Young Yu , Moon-Gyu Jang
发明人： Chil-Seong Ah , Ansoon Kim , Chan-Woo Park , Chang-Geun Ahn , Jong-Heon Yang , In-Bok Baek , Taeyoub Kim , HyeKyoung Yang , Gun-Yong Sung , Seon-Hee Park , Han-Young Yu , Moon-Gyu Jang
IPC分类号： G01N27/414
CPC分类号： G01N33/54373 , B01L3/502761 , B01L2200/143 , B01L2300/0636 , B01L2300/0645 , B01L2300/0867 , B01L2300/163 , B01L2400/0415 , G01N27/4145
摘要： Provided are an apparatus and method for detecting biomolecules. The apparatus includes a FET having a substrate, a source electrode, a drain electrode, a channel region between the source and drain electrodes, and probe molecules fixed to the channel region, wherein the source and drain electrodes are separated on the substrate, a microfluid supplier selectively supplying one of a reference buffer solution of low ionic concentration and a reaction solution of high ionic concentration containing target molecules, to the channel region of the FET to which the probe molecules are fixed, and a biomolecule detector detecting the target molecules by measuring a first current value of the channel region of the FET, and a second current value of the channel region of the FET to which the target molecules and the probe molecules that bind to each other in the reaction solution of high ionic concentration are fixed.
摘要翻译：提供了用于检测生物分子的装置和方法。该装置包括具有基板，源电极，漏电极，源极和漏极之间的沟道区以及固定到沟道区的探针分子的FET，其中源极和漏极在衬底上分离，微流体供应商选择性地将低离子浓度的参考缓冲溶液和含有靶分子的高离子浓度的反应溶液中的一种提供给探针分子固定的FET的通道区域，以及通过测量来检测靶分子的生物分子检测器 FET的沟道区域的第一电流值和在高离子浓度的反应溶液中彼此结合的靶分子和探针分子的FET的沟道区域的第二电流值是固定的。

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