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41. 发明申请

US20090310268A1 NANOTUBE ESD PROTECTIVE DEVICES AND CORRESPONDING NONVOLATILE AND VOLATILE NANOTUBE SWITCHES 有权
标题翻译： NANOTUBE ESD保护器件和相应的非易失性和易失性纳米管开关
公开(公告)号：US20090310268A1
公开(公告)日：2009-12-17
申请号：US12509993
申请日：2009-07-27
申请人： Claude L. BERTIN , Brent M. SEGAL , Thomas RUECKES , Jonathan W. WARD
发明人： Claude L. BERTIN , Brent M. SEGAL , Thomas RUECKES , Jonathan W. WARD
IPC分类号： H02H9/00
CPC分类号： H01L23/62 , B82Y10/00 , G11C13/025 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/17 , H01H1/0094 , H01L23/60 , H01L27/0248 , H01L27/0251 , H01L51/0048 , H01L2224/16 , H01L2924/01019 , H01L2924/0102 , H01L2924/01025 , H01L2924/01046 , H01L2924/01066 , H01L2924/01068 , H01L2924/01077 , H01L2924/01079 , H01L2924/09701 , H01L2924/12044 , H01L2924/19103 , H01L2924/19104 , H01L2924/19105 , H01L2924/3011 , H05K1/0259 , Y10T29/49105 , Y10T29/49117 , Y10T29/49124 , Y10T29/49204
摘要： Nanotube ESD protective devices and corresponding nonvolatile and volatile nanotube switches. An electrostatic discharge (ESD) protection circuit for protecting a protected circuit is coupled to an input pad. The ESD circuit includes a nanotube switch electrically having a control. The switch is coupled to the protected circuit and to a discharge path. The nanotube switch is controllable, in response to electrical stimulation of the control, between a de-activated state and an activated state. The activated state creates a current path so that a signal on the input pad flows to the discharge path to cause the signal at the input pad to remain within a predefined operable range for the protected circuit. The nanotube switch, the input pad, and the protected circuit may be on a semiconductor chip. The nanotube switch may be on a chip carrier. The deactivated and activated states may be volatile or non-volatile depending on the embodiment. The ESD circuit may be repeatedly programmed between the activated and deactivated states so as to repeatedly activate and deactivate ESD protection of the protected circuit. The nanotube switch provides protection based on the magnitude of the signal on the input pad.
摘要翻译：纳米管ESD保护装置和相应的非易失性和挥发性纳米管开关。用于保护受保护电路的静电放电（ESD）保护电路耦合到输入焊盘。 ESD电路包括电子控制的纳米管开关。开关耦合到保护电路和放电路径。纳米管开关可以响应于控制的电刺激而被控制在去激活状态和激活状态之间。激活状态产生电流路径，使得输入焊盘上的信号流到放电路径，使输入焊盘处的信号保持在受保护电路的预定可操作范围内。纳米管开关，输入焊盘和受保护电路可以在半导体芯片上。纳米管开关可以在芯片载体上。根据实施例，去激活状态和激活状态可以是易失性的或非易失性的。可以在激活和去激活状态之间重复地编程ESD电路，以便重复激活和去激活受保护电路的ESD保护。纳米管开关基于输入焊盘上的信号幅度提供保护。

42. 发明授权

US07619291B2 Devices having horizontally-disposed nanofabric articles and methods of making the same 有权
标题翻译：具有水平布置的纳米制品的装置及其制造方法
公开(公告)号：US07619291B2
公开(公告)日：2009-11-17
申请号：US11999228
申请日：2007-12-04
申请人： Venkatachalam C. Jaiprakash , Jonathan W. Ward , Thomas Rueckes , Brent M. Segal
发明人： Venkatachalam C. Jaiprakash , Jonathan W. Ward , Thomas Rueckes , Brent M. Segal
IPC分类号： H01L29/84
CPC分类号： G11C13/025 , B81B2203/0338 , B81B2203/04 , B81C1/00142 , B81C2201/0109 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/02 , C01B2202/22 , G11C11/56 , G11C23/00 , G11C2213/16 , G11C2213/77 , G11C2213/81 , H01H1/0094 , H01L21/76838 , H01L51/0048 , H01L2221/1094 , Y10S977/724 , Y10S977/734 , Y10S977/742
摘要： New devices having horizontally-disposed nanofabric articles and methods of making same are described. A discrete electro-mechanical device includes a structure having an electrically-conductive trace. A defined patch of nanotube fabric is disposed in spaced relation to the trace; and the defined patch of nanotube fabric is electromechanically deflectable between a first and second state. In the first state, the nanotube article is in spaced relation relative to the trace, and in the second state the nanotube article is in contact with the trace. A low resistance signal path is in electrical communication with the defined patch of nanofabric. Under certain embodiments, the structure includes a defined gap into which the electrically conductive trace is disposed. The defined gap has a defined width, and the defined patch of nanotube fabric spans the gap and has a longitudinal extent that is slightly longer than the defined width of the gap.
摘要翻译：描述了具有水平布置的纳米制品的新器件及其制造方法。分立的机电装置包括具有导电迹线的结构。定义的纳米管织物贴片与痕迹间隔开设置; 并且所述限定的纳米管织物片在第一和第二状态之间是机电偏转的。在第一状态下，纳米管制品相对于迹线具有间隔的关系，并且在第二状态下，纳米管制品与痕迹接触。低电阻信号路径与所定义的纳米片段电连通。在某些实施例中，该结构包括限定的导电迹线设置的间隙。限定的间隙具有限定的宽度，并且限定的纳米管织物片段跨过间隙并且具有比限定的间隙宽度稍长的纵向范围。

43. 发明授权

US07563711B1 Method of forming a carbon nanotube-based contact to semiconductor 有权
标题翻译：形成与半导体的碳纳米管基接触的方法
公开(公告)号：US07563711B1
公开(公告)日：2009-07-21
申请号：US11708929
申请日：2007-02-21
申请人： Jonathan W. Ward , Benjamin Schlatka , Mitchell Meinhold , Robert F. Smith , Brent M. Segal
发明人： Jonathan W. Ward , Benjamin Schlatka , Mitchell Meinhold , Robert F. Smith , Brent M. Segal
IPC分类号： H01L21/44
CPC分类号： H01L33/40 , B82Y20/00 , H01L21/28575 , H01L29/2003 , H01L29/417 , H01L29/452 , H01L33/32 , Y10S438/924 , Y10T428/30 , Y10T428/31678
摘要： Manufacturers encounter limitations in forming low resistance ohmic electrical contact to semiconductor material P-type Gallium Nitride (p-GaN), commonly used in photonic applications, such that the contact is highly transparent to the light emission of the device. Carbon nanotubes (CNTs) can address this problem due to their combined metallic and semiconducting characteristics in conjunction with the fact that a fabric of CNTs has high optical transparency. The physical structure of the contact scheme is broken down into three components, a) the GaN, b) an interface material and c) the metallic conductor. The role of the interface material is to make suitable contact to both the GaN and the metal so that the GaN, in turn, will make good electrical contact to the metallic conductor that interfaces the device to external circuitry. A method of fabricating contact to GaN using CNTs and metal while maintaining protection of the GaN surface is provided.
摘要翻译：制造商在与通常用于光子应用的半导体材料P型氮化镓（p-GaN）形成低电阻欧姆电接触方面遇到限制，使得接触对器件的发光是高度透明的。碳纳米管（CNT）由于其组合的金属和半导体特性以及CNT的织物具有高的光学透明度的事实，可以解决这个问题。接触方案的物理结构分为三个部分：a）GaN，b）界面材料和c）金属导体。界面材料的作用是使GaN和金属两者适当地接触，这样GaN又将与将器件与外部电路接口的金属导体进行良好的电接触。提供了一种使用CNT和金属制造与GaN接触的方法，同时保持了GaN表面的保护。

44. 发明申请

US20090115305A1 TRIODES USING NANOFABRIC ARTICLES AND METHODS OF MAKING THE SAME 失效
标题翻译：使用南方文章的三方及其制作方法
公开(公告)号：US20090115305A1
公开(公告)日：2009-05-07
申请号：US12124475
申请日：2008-05-21
申请人： Brent M. Segal , Jonathan W. Ward , Thomas Rueckes
发明人： Brent M. Segal , Jonathan W. Ward , Thomas Rueckes
IPC分类号： H01J21/10 , H01J9/385
CPC分类号： H01J21/10 , H01J3/021 , H01J19/38 , H01J2203/0232 , Y10S977/742
摘要： Vacuum microelectronic devices with carbon nanotube films, layers, ribbons and fabrics are provided. The present invention discloses microelectronic vacuum devices including triode structures that include three-terminals (an emitter, a grid and an anode), and also higher-order devices such as tetrodes and pentodes, all of which use carbon nanotubes to form various components of the devices. In certain embodiments, patterned portions of nanotube fabric may be used as grid/gate components, conductive traces, etc. Nanotube fabrics may be suspended or conformally disposed. In certain embodiments, methods for stiffening a nanotube fabric layer are used. Various methods for applying, selectively removing (e.g. etching), suspending, and stiffening vertically- and horizontally-disposed nanotube fabrics are disclosed, as are CMOS-compatible fabrication methods. In certain embodiments, nanotube fabric triodes provide high-speed, small-scale, low-power devices that can be employed in radiation-intensive applications.
摘要翻译：提供具有碳纳米管膜，层，带和织物的真空微电子器件。本发明公开了包括三端（发射极，栅极和阳极）的三极管结构的微电子真空装置，以及诸如四极和五极管的高阶器件，所有这些都使用碳纳米管来形成设备。在某些实施例中，纳米管织物的图案化部分可以用作栅极/栅极部件，导电迹线等。纳米管织物可以悬挂或保形地设置。在某些实施例中，使用用于加强纳米管织物层的方法。公开了用于施加，选择性地去除（例如蚀刻）悬浮和加强垂直和水平布置的纳米管织物的各种方法，以及CMOS兼容的制造方法。在某些实施例中，纳米管织物三极管提供可用于辐射密集型应用中的高速，小规模，低功率的器件。

45. 发明申请

US20090045473A1 Devices having horizontally-disposed nanofabric articles and methods of making the same 有权
公开(公告)号：US20090045473A1
公开(公告)日：2009-02-19
申请号：US11999228
申请日：2007-12-04
申请人： Venkatachalam C. Jaiprakash , Jonathan W. Ward , Thomas Rueckes , Brent M. Segal
发明人： Venkatachalam C. Jaiprakash , Jonathan W. Ward , Thomas Rueckes , Brent M. Segal
IPC分类号： H01L29/84
CPC分类号： G11C13/025 , B81B2203/0338 , B81B2203/04 , B81C1/00142 , B81C2201/0109 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/02 , C01B2202/22 , G11C11/56 , G11C23/00 , G11C2213/16 , G11C2213/77 , G11C2213/81 , H01H1/0094 , H01L21/76838 , H01L51/0048 , H01L2221/1094 , Y10S977/724 , Y10S977/734 , Y10S977/742
摘要： New devices having horizontally-disposed nanofabric articles and methods of making same are described. A discrete electro-mechanical device includes a structure having an electrically-conductive trace. A defined patch of nanotube fabric is disposed in spaced relation to the trace; and the defined patch of nanotube fabric is electromechanically deflectable between a first and second state. In the first state, the nanotube article is in spaced relation relative to the trace, and in the second state the nanotube article is in contact with the trace. A low resistance signal path is in electrical communication with the defined patch of nanofabric. Under certain embodiments, the structure includes a defined gap into which the electrically conductive trace is disposed. The defined gap has a defined width, and the defined patch of nanotube fabric spans the gap and has a longitudinal extent that is slightly longer than the defined width of the gap.

46. 发明授权

US08631562B2 Methods of making nanotube switches 有权
标题翻译：制作纳米管开关的方法
公开(公告)号：US08631562B2
公开(公告)日：2014-01-21
申请号：US12953076
申请日：2010-11-23
申请人： Claude L. Bertin , Brent M. Segal , Thomas Rueckes , Jonathan W. Ward
发明人： Claude L. Bertin , Brent M. Segal , Thomas Rueckes , Jonathan W. Ward
IPC分类号： H01H11/00 , H01H65/00
CPC分类号： H01L23/62 , B82Y10/00 , G11C13/025 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/17 , H01H1/0094 , H01L23/60 , H01L27/0248 , H01L27/0251 , H01L51/0048 , H01L2224/16 , H01L2924/01019 , H01L2924/0102 , H01L2924/01025 , H01L2924/01046 , H01L2924/01066 , H01L2924/01068 , H01L2924/01077 , H01L2924/01079 , H01L2924/09701 , H01L2924/12044 , H01L2924/19103 , H01L2924/19104 , H01L2924/19105 , H01L2924/3011 , H05K1/0259 , Y10T29/49105 , Y10T29/49117 , Y10T29/49124 , Y10T29/49204
摘要： An electrostatic discharge (ESD) protection circuit for protecting a protected circuit is coupled to an input pad. The ESD circuit includes a nanotube switch electrically having a control. The switch is coupled to the protected circuit and to a discharge path. The nanotube switch is controllable, in response to electrical stimulation of the control, between a de-activated state and an activated state. The activated state creates a current path so that a signal on the input pad flows to the discharge path to cause the signal at the input pad to remain within a predefined operable range for the protected circuit. The nanotube switch, the input pad, and the protected circuit may be on a semiconductor chip. The nanotube switch may be on a chip carrier. The deactivated and activated states may be volatile or non-volatile depending on the embodiment.
摘要翻译：用于保护受保护电路的静电放电（ESD）保护电路耦合到输入焊盘。 ESD电路包括电子控制的纳米管开关。开关耦合到保护电路和放电路径。纳米管开关可以响应于控制的电刺激而被控制在去激活状态和激活状态之间。激活状态产生电流路径，使得输入焊盘上的信号流到放电路径，使输入焊盘处的信号保持在受保护电路的预定可操作范围内。纳米管开关，输入焊盘和受保护电路可以在半导体芯片上。纳米管开关可以在芯片载体上。根据实施例，去激活状态和激活状态可以是易失性的或非易失性的。

47. 发明授权

US08125824B1 Nanotube random access memory (NRAM) and transistor integration 有权
标题翻译：纳米管随机存取存储器（NRAM）和晶体管集成
公开(公告)号：US08125824B1
公开(公告)日：2012-02-28
申请号：US12875044
申请日：2010-09-02
申请人： Jonathan W. Ward , Adrian N. Robinson , Scott Anderson
发明人： Jonathan W. Ward , Adrian N. Robinson , Scott Anderson
IPC分类号： G11C11/34
CPC分类号： G11C13/025 , B82Y10/00
摘要： A nanotube random access memory (NRAM) structure is provided. The structure includes a substrate, a gate electrode disposed in the substrate, and a first nanotube fabric disposed on the substrate. The first nanotube fabric has a channel region spaced apart from the gate electrode by a portion of the substrate. The structure also includes a drain contact contacting the first nanotube fabric. The structure also includes a second nanotube fabric disposed on the substrate, and is adjacent and connected to the first nanotube fabric. The structure also includes a source contact contacting the second nanotube fabric. The first nanotube fabric is a high-voltage fabric compared to the second nanotube fabric such that when a voltage is applied across the first nanotube fabric and the second nanotube fabric via the drain contact and the source contact, the second nanotube fabric is permitted to switch without switching the first nanotube fabric.
摘要翻译：提供了纳米管随机存取存储器（NRAM）结构。该结构包括衬底，设置在衬底中的栅电极和布置在衬底上的第一纳米管织物。第一纳米管织物具有通过衬底的一部分与栅电极间隔开的沟道区。该结构还包括接触第一纳米管织物的漏极接触。该结构还包括布置在基底上并与第一纳米管织物相邻并连接的第二纳米管织物。该结构还包括接触第二纳米管织物的源极接触。与第二纳米管织物相比，第一纳米管织物是高电压织物，使得当经由漏极接触和源极接触跨越第一纳米管织物和第二纳米管织物施加电压时，允许第二纳米管织物切换而不切换第一纳米管织物。

48. 发明授权

US08102018B2 Nonvolatile resistive memories having scalable two-terminal nanotube switches 有权
标题翻译：具有可扩展的两端纳米管开关的非易失性电阻存储器
公开(公告)号：US08102018B2
公开(公告)日：2012-01-24
申请号：US11835612
申请日：2007-08-08
申请人： Claude L. Bertin , Thomas Rueckes , Jonathan W. Ward , Frank Guo , Steven L. Konsek , Mitchell Meinhold
发明人： Claude L. Bertin , Thomas Rueckes , Jonathan W. Ward , Frank Guo , Steven L. Konsek , Mitchell Meinhold
IPC分类号： G11C11/56 , G11C5/00 , H01L29/00
CPC分类号： B82Y10/00 , G11C11/56 , G11C13/003 , G11C13/025 , G11C19/00 , G11C29/86 , G11C2213/19 , G11C2213/75 , G11C2213/79 , H01L27/101 , H01L27/1052 , H01L27/112 , H01L27/11206
摘要： A non-volatile resistive memory is provided. The memory includes at least one non-volatile memory cell and selection circuitry. Each memory cell has a two-terminal nanotube switching device having and a nanotube fabric article disposed between and in electrical communication with two conductive terminals. Selection circuitry is operable to select the two-terminal nanotube switching device for read and write operations. Write control circuitry, responsive to a control signal, supplies write signals to a selected memory cell to induce a change in the resistance of the nanotube fabric article, the resistance corresponding to an informational state of the memory cell. Resistance sensing circuitry in communication with a selected nonvolatile memory cell, senses the resistance of the nanotube fabric article and provides the control signal to the write control circuitry. Read circuitry reads the corresponding informational state of the memory cell.
摘要翻译：提供了非易失性电阻性存储器。存储器包括至少一个非易失性存储单元和选择电路。每个存储单元具有两端纳米管切换装置，其具有设置在两个导电端子之间并与两个导电端子电连通的纳米管织物制品。选择电路可操作以选择用于读和写操作的两端纳米管切换装置。响应于控制信号的写控制电路向所选存储单元提供写入信号，以引起纳米管织物物品的电阻变化，该电阻对应于存储单元的信息状态。与所选择的非易失性存储器单元通信的电阻感测电路感测纳米管织物制品的电阻并将控制信号提供给写入控制电路。读取电路读取存储单元的相应信息状态。

49. 发明授权

US08013363B2 Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same 有权
标题翻译：非挥发性纳米管二极管和非易失性纳米管块及使用其的系统及其制造方法
公开(公告)号：US08013363B2
公开(公告)日：2011-09-06
申请号：US11835759
申请日：2007-08-08
申请人： Claude L. Bertin , Thomas Rueckes , X. M. Henry Huang , Ramesh Sivarajan , Eliodor G. Ghenciu , Steven L. Konsek , Mitchell Meinhold , Jonathan W. Ward , Darren K. Brock
发明人： Claude L. Bertin , Thomas Rueckes , X. M. Henry Huang , Ramesh Sivarajan , Eliodor G. Ghenciu , Steven L. Konsek , Mitchell Meinhold , Jonathan W. Ward , Darren K. Brock
IPC分类号： H01L27/10
CPC分类号： H01L27/1021 , B82Y10/00 , G11C13/025 , G11C2213/19 , H01L21/8221 , H01L23/5256 , H01L27/0688 , H01L27/1203 , H01L2924/0002 , H01L2924/00
摘要： Under one aspect, a nonvolatile nanotube diode includes: a substrate; a semiconductor element disposed over the substrate, the semiconductor element having an anode and a cathode and capable of forming an electrically conductive pathway between the anode and the cathode; a nanotube switching element disposed over the semiconductor element, the nanotube switching element including a conductive contact and a nanotube fabric element capable of a plurality of resistance states; and a conductive terminal disposed in spaced relation to the conductive contact, wherein the nanotube fabric element is interposed between and in electrical communication with the conductive contact and the conductive contact is in electrical communication with the cathode, and wherein in response to electrical stimuli applied to the anode and the conductive terminal, the nonvolatile nanotube diode is capable of forming an electrically conductive pathway between the anode and the conductive terminal.
摘要翻译：在一个方面，非易失性纳米管二极管包括：基板; 设置在所述衬底上的半导体元件，所述半导体元件具有阳极和阴极，并且能够在所述阳极和所述阴极之间形成导电通路; 设置在所述半导体元件上的纳米管开关元件，所述纳米管开关元件包括导电接触件和能够具有多个电阻状态的纳米管织物元件; 以及导电端子，其以导电接触件的间隔设置，其中所述纳米管织物元件置于所述导电接触件之间并与所述导电接触件电连通，并且所述导电接触件与所述阴极电连通，并且其中响应于施加到阳极和导电端子，非易失性纳米管二极管能够在阳极和导电端子之间形成导电通路。

50. 发明申请

US20100267205A1 CARBON NANOTUBES FOR THE SELECTIVE TRANSFER OF HEAT FROM ELECTRONICS 有权
标题翻译：碳纳米管用于电子选择性转移
公开(公告)号：US20100267205A1
公开(公告)日：2010-10-21
申请号：US12066063
申请日：2006-09-05
申请人： Jonathan W. Ward , Claude L. Bertin , Brent M. Segal
发明人： Jonathan W. Ward , Claude L. Bertin , Brent M. Segal
IPC分类号： H01L23/373 , H01L21/70 , H01L21/02
CPC分类号： H01L23/373 , H01L23/433 , H01L24/28 , H01L24/31 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/73253 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/1306 , H01L2924/14 , Y10S977/80 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： Under one aspect, a method of cooling a circuit element includes providing a thermal reservoir having a temperature lower than an operating temperature of the circuit element; and providing a nanotube article in thermal contact with the circuit element and with the reservoir, the nanotube article including a non-woven fabric of nanotubes in contact with other nanotubes to define a plurality of thermal pathways along the article, the nanotube article having a nanotube density and a shape selected such that the nanotube article is capable of transferring heat from the circuit element to the thermal reservoir.
摘要翻译：在一个方面，冷却电路元件的方法包括提供具有低于电路元件的工作温度的温度的热存储器; 并且提供与所述电路元件和所述储存器热接触的纳米管制品，所述纳米管制品包括与其它纳米管接触的纳米管的无纺织物以限定沿着所述制品的多个热路径，所述纳米管制品具有纳米管密度和形状，使得纳米管制品能够将热量从电路元件传递到热储存器。

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