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    • 41. 发明申请
    • Method and apparatus for improving uniformity of large-area substrates
    • 改善大面积基板均匀性的方法和装置
    • US20070221128A1
    • 2007-09-27
    • US11389603
    • 2006-03-23
    • Soo Young ChoiJohn M. White
    • Soo Young ChoiJohn M. White
    • C23C16/00
    • C23C16/45565C23C16/345C23C16/5096C23C16/52
    • Embodiments of the present invention generally provide methods and apparatus for improving the uniformity of a film deposited on a large-area substrate, particularly for films deposited in a PECVD system. In one embodiment, a plasma-processing chamber is configured to be asymmetrical relative to a substrate in order to compensate for plasma density non-uniformities in the chamber caused by unwanted magnetic fields. In another embodiment, a plasma-processing chamber is adapted to create a neutral current bypass path that reduces electric current flow through a magnetic field-generating feature in the chamber. In another embodiment, a method is provided for depositing a uniform film on a large-area substrate in a plasma-processing chamber. The chamber is made electrically symmetric during processing by creating a neutral current bypass path, wherein the neutral current bypass path substantially reduces neutral current flow through a magnetic field-generating feature in the chamber.
    • 本发明的实施例通常提供了用于改善沉积在大面积基板上的膜的均匀性的方法和装置,特别是用于沉积在PECVD系统中的薄膜。 在一个实施例中,等离子体处理室被配置为相对于衬底是不对称的,以便补偿由不想要的磁场引起的腔室中的等离子体密度不均匀性。 在另一个实施例中,等离子体处理室适于产生中性电流旁路路径,其减小通过腔室中的磁场产生特征的电流。 在另一个实施例中,提供了一种用于在等离子体处理室中的大面积衬底上沉积均匀膜的方法。 通过产生中性电流旁路路径,室在处理期间被电对称,其中中性线旁路通过基本上减少通过腔室中的磁场产生特征的中性点电流。