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41. 发明授权

US08421064B2 Organic-light-emitting-diode flat-panel light-source apparatus 有权
标题翻译：有机发光二极管平板光源装置
公开(公告)号：US08421064B2
公开(公告)日：2013-04-16
申请号：US13078095
申请日：2011-04-01
申请人： Jun Han Han , Hye Yong Chu , Jeong Ik Lee , Doo Hee Cho , Jong Hee Lee , Joo Won Lee , Jin Wook Shin
发明人： Jun Han Han , Hye Yong Chu , Jeong Ik Lee , Doo Hee Cho , Jong Hee Lee , Joo Won Lee , Jin Wook Shin
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00
CPC分类号： H05B33/10 , H01L27/3288 , H01L51/5212 , H01L51/5228 , H01L51/56 , H05B33/26
摘要： Provided are an organic-light-emitting-diode (OLED) flat-panel light-source apparatus and a method of manufacturing the same. The device includes an anode and a cathode, to which externally applied power is supplied, disposed on a substrate, an organic emission layer (EML) interposed between the anode and the cathode and configured to emit light due to power supplied through the anode and the cathode, and a subsidiary electrode layer including a plurality of subsidiary electrodes bonded to the anode or the cathode and configured to supply power to the anode or the cathode or electrically insulated from the anode or the cathode and configured to supply power to other emission regions.
摘要翻译：提供一种有机发光二极管（OLED）平板光源装置及其制造方法。该装置包括阳极和阴极，外部施加的功率被供应到其上，设置在基板上，有机发射层（EML）插入在阳极和阴极之间并且被配置为由于通过阳极提供的功率而发光，阴极和辅助电极层，其包括结合到阳极或阴极的多个辅助电极，并且被配置为向阳极或阴极供电或者与阳极或阴极电绝缘并且被配置为向其它发射区域供电。

42. 发明授权

US08363301B2 Transparent smart light source capable of adjusting illumination direction 有权
标题翻译：透明智能光源能够调节照明方向
公开(公告)号：US08363301B2
公开(公告)日：2013-01-29
申请号：US12816858
申请日：2010-06-16
申请人： Jeong Ik Lee , Hye Yong Chu , Jong Hee Lee
发明人： Jeong Ik Lee , Hye Yong Chu , Jong Hee Lee
IPC分类号： G02F1/15
CPC分类号： G02F1/15 , E06B9/24 , E06B2009/2417 , E06B2009/2464 , E06B2009/247 , E06B2009/2476 , F21S9/037 , F21V33/006 , F21Y2105/00 , F21Y2115/15 , G02F2201/44 , G02F2202/34 , H01L27/3227 , H01L27/3232 , H01L2251/5323 , H01L2251/5361
摘要： A transparent smart light source capable of adjusting an illumination direction is provided. The transparent smart light source includes a reflectance/transmittance tunable device that adjusts an illumination direction by reflecting or transmitting light emitted from a transparent organic light-emitting diode (OLED) according to applied voltage, and thus can simply adjust the illumination direction according to purpose. Accordingly, it is possible to prevent optical loss in an unnecessary direction, and power consumption can be reduced. Furthermore, the transparent smart light source can serve as a curtain blocking out external light, as well as a lighting device, and also can be combined with a solar cell to generate electric power.
摘要翻译：提供能够调节照明方向的透明智能光源。透明智能光源包括通过根据施加的电压反射或透射从透明有机发光二极管（OLED）发射的光来调节照明方向的反射/透射可调谐装置，因此可以根据目的简单地调节照明方向。因此，可以防止在不必要的方向上的光损失，并且可以降低功耗。此外，透明智能光源可以用作遮挡外部光的窗帘以及照明装置，并且还可以与太阳能电池组合以产生电力。

43. 发明申请

US20120032186A1 WHITE ORGANIC LIGHT EMITTING DEVICE 审中-公开
标题翻译：白有机发光装置
公开(公告)号：US20120032186A1
公开(公告)日：2012-02-09
申请号：US13239810
申请日：2011-09-22
申请人： Jeong Ik LEE , Hye Yong CHU , Lee Mi DO , Sang Hee PARK , Chi Sun HWANG , Yong Suk YANG , Sung Mook CHUNG
发明人： Jeong Ik LEE , Hye Yong CHU , Lee Mi DO , Sang Hee PARK , Chi Sun HWANG , Yong Suk YANG , Sung Mook CHUNG
IPC分类号： H01L33/02
CPC分类号： H01L51/5036
摘要： Provided is a white organic light emitting device (OLED), including: a first electrode formed on a substrate; a hole transport layer formed on the first electrode; an emission layer formed on the hole transport layer; an electron transport layer formed on the emission layer; and an color control layer formed on at least one of the hole transport layer, the emission layer and the electron transport layer, and emitting green and/or red by energy transfer from the emission layer. The white OLED emits red, green and blue light with high efficiency, has excellent color reproducibility and a high color reproduction index.
摘要翻译：提供了一种白色有机发光器件（OLED），包括：形成在衬底上的第一电极; 形成在所述第一电极上的空穴传输层; 形成在空穴传输层上的发光层; 形成在发光层上的电子传输层; 以及形成在空穴传输层，发射层和电子传输层中的至少一个上的颜色控制层，并且通过从发射层的能量转移发射绿色和/或红色。白色OLED以高效率发出红色，绿色和蓝色光，具有优异的色彩再现性和高色彩再现指数。

44. 发明申请

US20110100006A1 INTEGRATED PROCESS FOR WATER-HYDROGEN-ELECTRICITY NUCLEAR GAS-COOLED REACTOR 审中-公开
标题翻译：水电核燃料冷却反应器综合工艺
公开(公告)号：US20110100006A1
公开(公告)日：2011-05-05
申请号：US12906506
申请日：2010-10-18
申请人： Hee Cheon No , Young-Soo Kim , Hosik Kim , Ho Joon Yoon , Hyung Gon Jin , Byong Guk Jeon , Jinyoung Choi , Jeong Ik Lee
发明人： Hee Cheon No , Young-Soo Kim , Hosik Kim , Ho Joon Yoon , Hyung Gon Jin , Byong Guk Jeon , Jinyoung Choi , Jeong Ik Lee
IPC分类号： G21D5/00
CPC分类号： G21D5/00 , G21D9/00
摘要： Disclosed herein is an integrated process for production of electricity, hydrogen, and water using a high-temperature gas-cooled reactor as a single source, including: the high-temperature gas-cooled reactor, a power conversion unit connected directly or indirectly with the high-temperature gas-cooled reactor to receive heat produced by a reactor core of the high-temperature gas-cooled reactor and drive a gas turbine by the heat, thereby producing electricity through an electric generator, a hydrogen production unit that produces hydrogen by receiving the heat produced by the high-temperature gas-cooled reactor and/or the electricity produced by the electric generator, an electrical desalination unit that produces water by using the electricity produced by the electric generator, and a thermal desalination unit that produces water by distilling fresh water from salt water with waste heat recovered from a precooler and an intercooler of the power conversion unit.
摘要翻译：本文公开了一种使用高温气冷反应器作为单一源生产电，氢和水的综合方法，包括：高温气冷堆，直接或间接连接的电力转换单元高温气冷反应堆，以接收由高温气冷反应堆的反应堆芯产生的热量并通过热量驱动燃气轮机，由此通过发电机产生电力，通过接收产生氢气的氢气生产单元由高温气冷反应堆产生的热量和/或由发电机产生的电力，通过使用由发电机产生的电力产生水的电脱盐单元和通过蒸馏生产水的热脱盐单元来自盐水的淡水，具有从功率转换单元的预冷器和中间冷却器回收的废热。

45. 发明授权

US07875559B2 Method of manufacturing P-type ZnO semiconductor layer using atomic layer deposition and thin film transistor including the P-type ZnO semiconductor layer 有权
标题翻译：使用原子层沉积制造P型ZnO半导体层的方法和包括P型ZnO半导体层的薄膜晶体管
公开(公告)号：US07875559B2
公开(公告)日：2011-01-25
申请号：US11970836
申请日：2008-01-08
申请人： Sang Hee Park , Chi Sun Hwang , Hye Yong Chu , Jeong Ik Lee
发明人： Sang Hee Park , Chi Sun Hwang , Hye Yong Chu , Jeong Ik Lee
IPC分类号： H01L21/00 , H01L21/469 , H01L21/31
CPC分类号： H01L29/7869 , C23C16/308 , C23C16/34 , C23C16/407 , C23C16/45529 , C30B25/02 , C30B29/16 , H01L21/02554 , H01L21/02579 , H01L21/0262
摘要： Provided are a method of manufacturing a transparent N-doped p-type ZnO semiconductor layer using a surface chemical reaction between precursors containing elements constituting thin layers, and a thin film transistor (TFT) including the p-type ZnO semiconductor layer. The method includes the steps of: preparing a substrate and loading the substrate into a chamber; injecting a Zn precursor and an oxygen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the oxygen precursor using an atomic layer deposition (ALD) technique to form a ZnO thin layer on the substrate; and injecting a Zn precursor and an nitrogen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the nitrogen precursor to form a doping layer on the ZnO thin layer.
摘要翻译：提供了使用包含构成薄层的元素的前体和包含p型ZnO半导体层的薄膜晶体管（TFT）之间的表面化学反应来制造透明N掺杂p型ZnO半导体层的方法。该方法包括以下步骤：准备衬底并将衬底装载到腔室中; 将Zn前体和氧前体注入到室中，并且使用原子层沉积（ALD）技术在Zn前体和氧前体之间引起表面化学反应，以在衬底上形成ZnO薄层; 并将Zn前体和氮前体注入到室中，并且使Zn前体和氮前体之间的表面化学反应在ZnO薄层上形成掺杂层。

46. 发明申请

US20080277656A1 METHOD OF MANUFACTURING ZnO SEMICONDUCTOR LAYER FOR ELECTRONIC DEVICE AND THIN FILM TRANSISTOR INCLUDING THE ZnO SEMICONDUCTOR LAYER 审中-公开
标题翻译：用于电子器件的ZnO半导体层的制造方法和包括ZnO半导体层的薄膜晶体管
公开(公告)号：US20080277656A1
公开(公告)日：2008-11-13
申请号：US11970737
申请日：2008-01-08
申请人： Sang Hee PARK , Chi Sun HWANG , Hye Yong CHU , Jeong Ik LEE
发明人： Sang Hee PARK , Chi Sun HWANG , Hye Yong CHU , Jeong Ik LEE
IPC分类号： H01L21/20 , H01L29/786
CPC分类号： H01L29/7869 , H01L21/0237 , H01L21/02488 , H01L21/02554 , H01L21/0262 , H01L29/66969
摘要： Provided are a method of manufacturing a ZnO semiconductor layer for an electronic device, which can control the size of crystals of the ZnO semiconductor layer and the number of carriers using a surface chemical reaction between precursors, and a thin film transistor (TFT) including the ZnO semiconductor layer. The method includes: (a) loading a substrate into a chamber; (b) injecting a Zn precursor into the chamber to adsorb the Zn precursor on the substrate; (c) injecting an inert gas or N2 gas into the chamber to remove the remaining Zn precursor; (d) injecting an oxygen precursor into the chamber to cause a reaction between the oxygen precursor and the Zn precursor adsorbed on the substrate to form the ZnO semiconductor layer; (e) injecting the N2 gas or inert gas into the chamber to remove the remaining oxygen precursor; (f) repeating steps (a) through (e); (g) repeatedly processing the surface treatment of the ZnO semiconductor layer using O2 plasma or O3; (h) injecting the N2 gas or inert gas into the chamber to remove the remaining oxygen and Zn precursors; and (i) repeating steps (a) through (h) to control the thickness of the ZnO semiconductor layer. In this method, a transparent TFT is formed using a transparent substrate to enable manufacture of a transparent display device, and a flexible display device can be manufactured using a flexible substrate. Also, the crystallinity of the ZnO semiconductor layer can be increased to improve the mobility of a TFT, and the number of carriers can be controlled to reduce a leakage current. Therefore, a ZnO semiconductor having excellent characteristics can be manufactured.
摘要翻译：提供一种制造电子器件的ZnO半导体层的方法，其可以使用前体之间的表面化学反应来控制ZnO半导体层的晶体的尺寸和载流子的数量，以及包括 ZnO半导体层。该方法包括：（a）将衬底装载到腔室中; （b）将Zn前体注入到室中以将Zn前体吸附在基底上; （c）将惰性气体或N 2 O 2气体注入到室中以除去剩余的Zn前体; （d）将氧前体注入到所述室中以引起所述氧前体和所述衬底上吸附的所述Zn前体之间的反应以形成所述ZnO半导体层; （e）将N 2 N 2气体或惰性气体注入到室中以除去剩余的氧前体; （f）重复步骤（a）至（e）; （g）使用O 2等离子体或O 3 3重复处理ZnO半导体层的表面处理; （h）将N 2气体或惰性气体注入到室中以除去剩余的氧和Zn前体; 和（i）重复步骤（a）至（h）以控制ZnO半导体层的厚度。在该方法中，使用透明基板形成透明TFT以能够制造透明显示装置，并且可以使用柔性基板制造柔性显示装置。此外，可以增加ZnO半导体层的结晶度以提高TFT的迁移率，并且可以控制载流子数量以减少漏电流。因此，可以制造具有优异特性的ZnO半导体。

47. 发明申请

US20080164476A1 METHOD OF MANUFACTURING P-TYPE ZnO SEMICONDUCTOR LAYER USING ATOMIC LAYER DEPOSITION AND THIN FILM TRANSISTOR INCLUDING THE P-TYPE ZnO SEMICONDUCTOR LAYER 有权
标题翻译：使用原子层沉积和包括P型ZnO半导体层的薄膜晶体管制造P型ZnO半导体层的方法
公开(公告)号：US20080164476A1
公开(公告)日：2008-07-10
申请号：US11970836
申请日：2008-01-08
申请人： Sang Hee PARK , Chi Sun HWANG , Hye Yong CHU , Jeong Ik LEE
发明人： Sang Hee PARK , Chi Sun HWANG , Hye Yong CHU , Jeong Ik LEE
IPC分类号： H01L29/10 , H01L21/31
CPC分类号： H01L29/7869 , C23C16/308 , C23C16/34 , C23C16/407 , C23C16/45529 , C30B25/02 , C30B29/16 , H01L21/02554 , H01L21/02579 , H01L21/0262
摘要： Provided are a method of manufacturing a transparent N-doped p-type ZnO semiconductor layer using a surface chemical reaction between precursors containing elements constituting thin layers, and a thin film transistor (TFT) including the p-type ZnO semiconductor layer. The method includes the steps of: preparing a substrate and loading the substrate into a chamber; injecting a Zn precursor and an oxygen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the oxygen precursor using an atomic layer deposition (ALD) technique to form a ZnO thin layer on the substrate; and injecting a Zn precursor and an nitrogen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the nitrogen precursor to form a doping layer on the ZnO thin layer.
摘要翻译：提供了使用包含构成薄层的元素的前体和包含p型ZnO半导体层的薄膜晶体管（TFT）之间的表面化学反应来制造透明N掺杂p型ZnO半导体层的方法。该方法包括以下步骤：准备衬底并将衬底装载到腔室中; 将Zn前体和氧前体注入到室中，并且使用原子层沉积（ALD）技术在Zn前体和氧前体之间引起表面化学反应，以在衬底上形成ZnO薄层; 并将Zn前体和氮前体注入到室中，并且使Zn前体和氮前体之间的表面化学反应在ZnO薄层上形成掺杂层。

48. 发明授权

US07057074B2 Bisphenylene-spirobifluorene compounds, method for synthesizing the same, and electroluminescence material and device having the same 失效
标题翻译：双亚苯基 - 螺二芴化合物，其合成方法和电致发光材料及其制造方法
公开(公告)号：US07057074B2
公开(公告)日：2006-06-06
申请号：US10639333
申请日：2003-08-11
申请人： Hyoyoung Lee , Jiyoung Oh , Hye Yong Chu , Jeong Ik Lee , Seong Hyun Kim , Lee-Mi Do , Taehyoung Zyung
发明人： Hyoyoung Lee , Jiyoung Oh , Hye Yong Chu , Jeong Ik Lee , Seong Hyun Kim , Lee-Mi Do , Taehyoung Zyung
IPC分类号： C07C211/00
CPC分类号： H01L51/0039 , C08G61/10 , C09K11/06 , H01L51/0034 , H01L51/0035 , H01L51/0043 , H01L51/50 , Y10S428/917
摘要： Provided are bisphenylene-spirobifluorene compounds, a method for synthesizing the same, and EL material and device having the same. The bisphenylene-spirobifluorene compound is defined by the following formula: wherein R1 and R2 are identical or different and are independently a straight-chain or branched alkyl group having from 1 to 22 carbon atoms, X1 and X2 independently contains one or more elements selected from the group consisting of C, O, N, S, Si and Ge, and m and n are integers from 1 to 4.
摘要翻译：提供双亚苯基 - 螺二芴化合物，其合成方法和EL材料及其制备方法。双亚苯基 - 螺二芴化合物由下式定义：其中R 1和R 2相同或不同，并且独立地为具有1个以上的直链或支链烷基至22个碳原子，X 1和X 2独立地包含一个或多个选自C，O，N，S，Si和Ge的元素，m n为1〜4的整数。

49. 发明授权

US07005199B2 Organic electroluminescent devices having encapsulation thin film formed by wet processing and methods for manufacturing the same 有权
公开(公告)号：US07005199B2
公开(公告)日：2006-02-28
申请号：US10392131
申请日：2003-03-18
申请人： Gi-heon Kim , Ji-young Oh , Hye-yong Chu , Yong-suk Yang , Jeong-ik Lee , Lee-mi Do , Tae-hyoung Zyung
发明人： Gi-heon Kim , Ji-young Oh , Hye-yong Chu , Yong-suk Yang , Jeong-ik Lee , Lee-mi Do , Tae-hyoung Zyung
IPC分类号： H05B33/10 , H05B33/04
CPC分类号： H01L51/5259 , H01L51/5253 , Y10S428/917 , Y10T428/23 , Y10T428/2982 , Y10T428/2991 , Y10T428/2998 , Y10T428/31855
摘要： An organic electroluminescent device with an encapsulation film formed by wet processing and a manufacturing method thereof. The organic electroluminescent device includes a laminate structure including an anode, an organic light emitting layer and a cathode sequentially disposed on a substrate, and an encapsulation film having a polymer layer made of a polymerization product of a vinyl monomer covering the laminate structure. In the method for manufacturing the organic electroluminescent device, a laminate structure including an anode, an organic light emitting layer and a cathode sequentially disposed is formed on a substrate. An organic solution containing a vinyl monomer and a polymerization initiator is coated on the laminate structure. A polymerization reaction is induced to the organic solution coated on the laminate structure, thereby forming an encapsulation film made of a polymer layer on the laminate structure.

50. 发明授权

US06844088B2 Bisphenylene-spirobifluorene compounds, method for synthesizing the same, and electroluminescence material and device having the same 有权
标题翻译：双亚苯基 - 螺二芴化合物，其合成方法和电致发光材料及其制造方法
公开(公告)号：US06844088B2
公开(公告)日：2005-01-18
申请号：US10007171
申请日：2001-11-30
申请人： Hyoyoung Lee , Jiyoung Oh , Hye Yong Chu , Jeong Ik Lee , Seong Hyun Kim , Lee-Mi Do , Taehyoung Zyung
发明人： Hyoyoung Lee , Jiyoung Oh , Hye Yong Chu , Jeong Ik Lee , Seong Hyun Kim , Lee-Mi Do , Taehyoung Zyung
IPC分类号： C07F7/30 , C08G61/10 , C09K11/06 , H01L51/00 , H01L51/30 , H01L51/50 , H05B33/14 , C07C43/20
CPC分类号： H01L51/0039 , C08G61/10 , C09K11/06 , H01L51/0034 , H01L51/0035 , H01L51/0043 , H01L51/50 , Y10S428/917
摘要： Bisphenylene-spirobifluorene compounds, a method for synthesizing the same, and EL material and device having the same. The bisphenylene-spirobifluorene compound is defined by the following formula: wherein R1 and R2 are identical or different and are independently a straight-chain or branched alkyl group having from 1 to 22 carbon atoms, X1 and X2 independently contains one or more elements selected from the group consisting of C, O, N, S, Si and Ge, and m and n are integers from 1 to 4.
摘要翻译：双亚苯基 - 螺二芴化合物，其合成方法和EL材料及其制备方法。双亚苯基 - 螺二芴化合物由下式定义：其中R1和R2相同或不同，独立地为具有1至22个碳原子的直链或支链烷基，X1和X2独立地包含一个或多个选自由C，O，N，S，Si和Ge组成的组，m和n是1至4的整数。

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