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    • 2. 发明申请
    • METHOD OF MANUFACTURING ZnO SEMICONDUCTOR LAYER FOR ELECTRONIC DEVICE AND THIN FILM TRANSISTOR INCLUDING THE ZnO SEMICONDUCTOR LAYER
    • 用于电子器件的ZnO半导体层的制造方法和包括ZnO半导体层的薄膜晶体管
    • US20080277656A1
    • 2008-11-13
    • US11970737
    • 2008-01-08
    • Sang Hee PARKChi Sun HWANGHye Yong CHUJeong Ik LEE
    • Sang Hee PARKChi Sun HWANGHye Yong CHUJeong Ik LEE
    • H01L21/20H01L29/786
    • H01L29/7869H01L21/0237H01L21/02488H01L21/02554H01L21/0262H01L29/66969
    • Provided are a method of manufacturing a ZnO semiconductor layer for an electronic device, which can control the size of crystals of the ZnO semiconductor layer and the number of carriers using a surface chemical reaction between precursors, and a thin film transistor (TFT) including the ZnO semiconductor layer. The method includes: (a) loading a substrate into a chamber; (b) injecting a Zn precursor into the chamber to adsorb the Zn precursor on the substrate; (c) injecting an inert gas or N2 gas into the chamber to remove the remaining Zn precursor; (d) injecting an oxygen precursor into the chamber to cause a reaction between the oxygen precursor and the Zn precursor adsorbed on the substrate to form the ZnO semiconductor layer; (e) injecting the N2 gas or inert gas into the chamber to remove the remaining oxygen precursor; (f) repeating steps (a) through (e); (g) repeatedly processing the surface treatment of the ZnO semiconductor layer using O2 plasma or O3; (h) injecting the N2 gas or inert gas into the chamber to remove the remaining oxygen and Zn precursors; and (i) repeating steps (a) through (h) to control the thickness of the ZnO semiconductor layer. In this method, a transparent TFT is formed using a transparent substrate to enable manufacture of a transparent display device, and a flexible display device can be manufactured using a flexible substrate. Also, the crystallinity of the ZnO semiconductor layer can be increased to improve the mobility of a TFT, and the number of carriers can be controlled to reduce a leakage current. Therefore, a ZnO semiconductor having excellent characteristics can be manufactured.
    • 提供一种制造电子器件的ZnO半导体层的方法,其可以使用前体之间的表面化学反应来控制ZnO半导体层的晶体的尺寸和载流子的数量,以及包括 ZnO半导体层。 该方法包括:(a)将衬底装载到腔室中; (b)将Zn前体注入到室中以将Zn前体吸附在基底上; (c)将惰性气体或N 2 O 2气体注入到室中以除去剩余的Zn前体; (d)将氧前体注入到所述室中以引起所述氧前体和所述衬底上吸附的所述Zn前体之间的反应以形成所述ZnO半导体层; (e)将N 2 N 2气体或惰性气体注入到室中以除去剩余的氧前体; (f)重复步骤(a)至(e); (g)使用O 2等离子体或O 3 3重复处理ZnO半导体层的表面处理; (h)将N 2气体或惰性气体注入到室中以除去剩余的氧和Zn前体; 和(i)重复步骤(a)至(h)以控制ZnO半导体层的厚度。 在该方法中,使用透明基板形成透明TFT以能够制造透明显示装置,并且可以使用柔性基板制造柔性显示装置。 此外,可以增加ZnO半导体层的结晶度以提高TFT的迁移率,并且可以控制载流子数量以减少漏电流。 因此,可以制造具有优异特性的ZnO半导体。
    • 10. 发明申请
    • DISPLAY DEVICE
    • 显示设备
    • US20130181615A1
    • 2013-07-18
    • US13359438
    • 2012-01-26
    • Jeong Ik LEE
    • Jeong Ik LEE
    • H05B37/02H01L33/60
    • H01L27/3232
    • Disclosed is a display device, the device including a light emitting part including a first electrode, an organic light emitting layer and a second electrode for radiating light of a first wavelength, a pixel part stacked on the light emitting part to radiate light of a second wavelength using a reflective light, and a capping layer arranged between the light emitting part and the pixel part to reflect the light of the first wavelength and to transmit the light of the second wavelength, whereby legibility, color reproduction range and power consumption can be enhanced.
    • 公开了一种显示装置,该装置包括发光部,其包括第一电极,有机发光层和用于照射第一波长的光的第二电极,堆叠在发光部上的像素部分,以辐射第二波长的光 使用反射光的波长,以及布置在发光部和像素部之间的覆盖层,以反射第一波长的光并透射第二波长的光,从而可以提高可读性,颜色再现范围和功率消耗 。