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41. 发明授权

US06868214B1 Optical waveguide, method of fabricating the waveguide, and optical interconnection device using the waveguide 失效
标题翻译：光波导，制造波导的方法以及使用波导的光互连装置
公开(公告)号：US06868214B1
公开(公告)日：2005-03-15
申请号：US09626740
申请日：2000-07-26
申请人： Hajime Sakata , Takayuki Yagi , Toshihiko Ouchi
发明人： Hajime Sakata , Takayuki Yagi , Toshihiko Ouchi
IPC分类号： H01S5/026 , C25D5/02 , C25D7/12 , G02B6/122 , G02B6/13 , G02B6/138 , G02B6/42 , G02B6/43 , G02B6/22
CPC分类号： G02B6/43 , G02B6/138 , G02B6/4214
摘要： An optical waveguide includes a partial cylindrical portion, and a plurality of end portions. The partial cylindrical portion has an elongated profile, and is formed of a material transparent to light propagating along the partial cylindrical portion. The end portion has an approximately partial spherical profile, smoothly joins the partial cylindrical portion, and is formed of the same material as the material of the partial cylindrical portion, so that the light propagates along the partial cylindrical portion and the end portions while repeating total reflections at a boundary surface contouring the partial cylindrical portion and the end portions.
摘要翻译：光波导包括部分圆柱形部分和多个端部部分。部分圆柱形部分具有细长轮廓，并且由对沿着部分圆柱形部分传播的光透明的材料形成。端部具有近似部分的球形轮廓，平滑地接合部分圆柱形部分，并且由与部分圆柱形部分的材料相同的材料形成，使得光沿着部分圆柱形部分和端部部分传播，同时重复总计在局部圆柱形部分和端部部分的边界表面上的反射。

42. 发明授权

US06639927B2 Surface emitting semiconductor laser, and its fabrication method 失效
标题翻译：表面发射半导体激光器及其制造方法
公开(公告)号：US06639927B2
公开(公告)日：2003-10-28
申请号：US09749820
申请日：2000-12-28
申请人： Takahiro Sato , Hajime Sakata
发明人： Takahiro Sato , Hajime Sakata
IPC分类号： H01S506
CPC分类号： H01S5/18305 , H01S5/02272 , H01S5/02461 , H01S5/0422 , H01S5/0425 , H01S5/18311 , H01S5/423
摘要： A surface emitting semiconductor laser includes an active region formed on a growth substrate, upper and lower mirror layers that sandwich the active region to construct a vertical cavity, a selective oxidization layer, and a current injecting unit for injecting a current into the active region. The selective oxidization layer is selectively oxidized and insulated and is provided on the side of the active region opposite to the side of the substrate. In this structure, a post portion is formed by removing semiconductor material formed on the substrate down to an uppermost or halfway level of the selective oxidization layer while the selective oxidization layer is used as an etch stop layer, and the selective oxidization layer acts as both a current confinement layer for the current injection and an insulating layer for the current injecting unit.
摘要翻译：表面发射半导体激光器包括形成在生长衬底上的有源区，夹持有源区以构成垂直腔的上镜和下镜层，选择性氧化层和用于将电流注入到有源区中的电流注入单元。选择性氧化层被选择性地氧化和绝缘，并且设置在与衬底侧相对的有源区的一侧。在这种结构中，通过将形成在衬底上的半导体材料移除到选择性氧化层的最上层或中间层，同时选择性氧化层用作蚀刻停止层，并且选择性氧化层用作两者用于电流注入的电流限制层和用于电流注入单元的绝缘层。

43. 发明授权

US6072925A Optical integrated nodes, and optical communication systems and networks using the optical integrated nodes 失效
标题翻译：光学集成节点，以及使用光学集成节点的光通信系统和网络
公开(公告)号：US6072925A
公开(公告)日：2000-06-06
申请号：US515704
申请日：1995-08-16
申请人： Hajime Sakata
发明人： Hajime Sakata
IPC分类号： G02B6/12 , G02B6/122 , G02B6/124 , G02B6/28 , G02B6/34 , G02B6/42 , G02F1/313 , H04B10/2507 , H04B10/27 , H04B10/29 , H04B10/40 , H04B10/50 , H04B10/60 , H01S3/19
CPC分类号： G02F1/3133 , G02B6/124 , G02B2006/12123 , G02B2006/12147 , G02B6/12007 , G02B6/29316 , G02B6/4246 , G02F2001/3135
摘要： An integrated optical node includes a main waveguide, a sub-waveguide, a fixed-wavelength type optical coupler and a tunable type optical coupler. On the sub-waveguide, an optical receiver may be formed to detect light guided from the main waveguide to the sub-waveguide by the optical coupler and/or a laser may be formed to emit light to be guided from the sub-waveguide to the main waveguide by the optical coupler. The elements of the optical node are arranged on a common semiconductor substrate so that the optical node can be reduced in size.
摘要翻译：集成光节点包括主波导，子波导，固定波长型光耦合器和可调谐型光耦合器。在子波导上，可以形成光接收器以通过光耦合器检测从主波导引导到子波导的光，和/或可以形成激光以发射光以从子波导被引导到主波导由光耦合器。光节点的元件被布置在公共半导体衬底上，使得光节点的尺寸可以减小。

44. 发明授权

US5701325A Compound semiconductor device and fabrication method of producing the compound semiconductor device 失效
标题翻译：化合物半导体器件及其制造方法
公开(公告)号：US5701325A
公开(公告)日：1997-12-23
申请号：US731682
申请日：1996-10-16
申请人： Toshihiko Ouchi , Hajime Sakata , Noriaki Ohguri , Mamoru Uchida
发明人： Toshihiko Ouchi , Hajime Sakata , Noriaki Ohguri , Mamoru Uchida
IPC分类号： H01L33/06 , H01L33/10 , H01L33/22 , H01L33/30 , H01L33/40 , H01S5/00 , H01S5/042 , H01S5/10 , H01S5/12 , H01S3/08 , H01L21/20 , H01S3/18
CPC分类号： H01S5/12 , H01S5/1035 , H01S5/1203 , H01S5/1225 , H01S5/1231
摘要： An improved compound semiconductor device, such as a distributed Bragg reflection type or distributed feedback type laser device, having regions with and regions without a diffraction grating. The device is fabricated without exhibiting surface irregularities by growing a first epitaxial layer on a semiconductor substrate, forming a fine uneven structure on the surface of the first epitaxial layer and growing a second epitaxial layer on the fine uneven structure. The fine uneven structure has a surface shape which exposes crystal orientations that facilitate subsequent epitaxial growth. In one embodiment, portions of the fine uneven structure are formed as a diffraction grating while other portions are formed insufficiently uneven to have a diffraction effect for any usable light wavelength. The fine uneven structure may suitably be shallow, have a short pitch or be provided at a slant to the light propagation direction, in order to preclude a diffraction effect.
摘要翻译：改进的化合物半导体器件，例如分布式布拉格反射型或分布式反射型激光器件，其具有区域和不具有衍射光栅的区域。通过在半导体衬底上生长第一外延层，在第一外延层的表面上形成微小的不均匀结构，并在第一外延层上生长第二外延层，制造器件而不会出现表面凹凸。精细的不均匀结构具有暴露促进随后的外延生长的晶体取向的表面形状。在一个实施例中，微细凹凸结构的一部分形成为衍射光栅，而其它部分形成得不充分地不均匀以具有任何可用光波长的衍射效应。为了防止衍射效应，微细凹凸结构可以适当地浅，具有短的间距或者以光传播方向倾斜地设置。

45. 发明授权

US5648978A Oscillation polarization mode selective semiconductor laser, modulation method therefor and optical communication system using the same 失效
标题翻译：振荡偏振模式选择半导体激光器，其调制方法和使用其的光通信系统
公开(公告)号：US5648978A
公开(公告)日：1997-07-15
申请号：US579730
申请日：1995-12-28
申请人： Hajime Sakata
发明人： Hajime Sakata
IPC分类号： H01S5/062 , H01S5/0625 , H01S5/10 , H01S5/34 , H01S3/19 , G02B6/26 , H01S3/10 , H04B10/00
CPC分类号： B82Y20/00 , H01S5/0625 , H01S5/1032 , H01S2301/14 , H01S5/06236 , H01S5/1035 , H01S5/3404
摘要： A semiconductor laser includes a semiconductor laser structure having an active layer. The laser structure is designed such that light in both of two polarization modes can be excited therein. First and second reflectors are provided, and at least one of them is a distributed reflector which determines first and second reflection wavelengths for the two polarization modes. A coupling unit is provided for coupling the laser structure and the first and second reflectors for either of the light of the two polarization modes at first and second coupling wavelengths, which respectively coincide with the first and second reflection wavelengths. One of the light of the two polarization modes at the first and second reflection wavelengths is selectively propagated along a cavity comprised of the laser structure and the first and second reflectors by a control unit. Thus, light oscillates in one of the two polarization modes at the first and second reflection wavelengths.
摘要翻译：半导体激光器包括具有有源层的半导体激光器结构。激光结构被设计成使得两种偏振模式中的光都可以被激发。提供第一和第二反射器，并且它们中的至少一个是确定两种偏振模式的第一和第二反射波长的分布式反射器。提供耦合单元，用于在第一和第二耦合波长处分别与第一和第二反射波长重合的两个偏振模式的光中的任一个耦合激光器结构和第一和第二反射器。在第一和第二反射波长处的两个偏振模式的光之一通过控制单元沿着由激光器结构和第一和第二反射器组成的腔选择性地传播。因此，光在第一和第二反射波长处以两种偏振模式之一振荡。

46. 发明授权

US5349598A Optical semiconductor apparatus, a method of driving the same and an optical transmission system using the same 失效
标题翻译：光半导体装置，其驱动方法以及使用其的光传输系统
公开(公告)号：US5349598A
公开(公告)日：1994-09-20
申请号：US11211
申请日：1993-01-29
申请人： Toshihiko Ouchi , Hajime Sakata
发明人： Toshihiko Ouchi , Hajime Sakata
IPC分类号： G02B6/122 , G02F1/313 , G02F2/00 , H01L27/15 , H01S5/00 , H01S5/026 , H01S5/06 , H01S5/0625 , H01S5/10 , H01S5/12 , H01S5/40 , H01S5/50 , H04B10/07 , H04B10/275 , H04B10/278 , H04B10/29 , H04B10/40 , H04B10/50 , H04B10/548 , H04B10/572 , H04B10/60 , H04B10/64 , H01S3/19
CPC分类号： H01S5/1032 , H01S5/0264 , G02F2/002 , H01S5/026 , H01S5/06256 , H01S5/1035 , H01S5/1215 , H01S5/5045
摘要： An optical semiconductor apparatus includes at least two upper and lower light waveguides. The waveguides are formed in a direction of semiconductor layers layered on a substrate and have a predetermined coupling degree therebetween. At least one semiconductor laser and at least one photodetector are respectively arranged in any one of the light waveguides. A grating may be formed in or in the vicinity of any one of the light waveguides to attain a wavelength-sensitivity in the coupling between the upper and lower light waveguides. The coupling degree may be controlled by a voltage applied to a part of the waveguides. An incident light entering one of the waveguides can be coupled to a local oscillation light emitted from the semiconductor laser to generate a beat signal therebetween. The beat signal can be detected by the photodetector.
摘要翻译：光学半导体装置包括至少两个上和下光波导。波导沿着层叠在基板上的半导体层的方向形成，并且在它们之间具有预定的耦合度。至少一个半导体激光器和至少一个光电检测器分别布置在任何一个光波导中。光栅可以形成在任何一个光波导中或附近，以在上和下光波导之间的耦合中获得波长灵敏度。耦合度可以通过施加到一部分波导的电压来控制。入射到波导中的一个的入射光可以耦合到从半导体激光器发射的本地振荡光，以在它们之间产生拍频信号。拍摄信号可以由光电检测器检测。

47. 发明授权

US5140149A Optical apparatus using wavelength selective photocoupler 失效
标题翻译：使用波长选择光电耦合器的光学设备
公开(公告)号：US5140149A
公开(公告)日：1992-08-18
申请号：US796929
申请日：1991-11-22
申请人： Hajime Sakata , Hidetoshi Nojiri
发明人： Hajime Sakata , Hidetoshi Nojiri
IPC分类号： G02B6/124 , G02B6/34 , G02B6/42 , H01L27/15 , H01S3/00 , H01S5/026 , H01S5/042 , H01S5/10 , H01S5/50
CPC分类号： H01S5/5045 , G02B6/124 , G02B6/42 , H01L27/15 , H01S3/0064 , H01S5/1032 , G02B6/29323 , H01S5/0264 , H01S5/0425 , H01S5/1035
摘要： The present invention relates to optical apparatus such as a photosensor, a semiconductor laser, an optical amplifier in which a wavelength selective photocoupler is used so as to couple two waveguides through a diffraction grating.A photosensor which is one of the optical apparatus according to the present invention comprises a substrate, a first waveguide layer formed on the substrate, a second waveguide layer formed on the first waveguide layer to be stacked in a direction of thickness and which has a guided mode difference from that of the first waveguide layer, a diffraction grating formed on an overlapping region of the guided modes of the first and second waveguide layers and which couples light components of a specific wavelength range of light propagating through the first waveguide layer to the second waveguide layer, a light absorption layer for absorbing at least some light components of the light components coupled to the second waveguide layer, and an electrode for converting the light components absorbed by the light absorption layer into an electrical signal and outputting the electrical signal.
摘要翻译：本发明涉及光传感器，半导体激光器，光放大器等光学装置，其中使用波长选择性光电耦合器，以便通过衍射光栅耦合两个波导。作为本发明的光学装置之一的光电传感器包括基板，形成在基板上的第一波导层，形成在第一波导层上的第二波导层，以沿厚度方向堆叠并且具有引导与第一波导层的模式差异，形成在第一和第二波导层的引导模式的重叠区域上并且将通过第一波导层传播的特定波长范围的光分量耦合到第二波导层的第二波导层，用于吸收耦合到第二波导层的光分量的至少一些光分量的光吸收层，以及用于将由光吸收层吸收的光分量转换成电信号并输出电信号的电极。

48. 发明授权

US5013141A Liquid crystal light modulation device 失效
标题翻译：液晶光调制装置
公开(公告)号：US5013141A
公开(公告)日：1991-05-07
申请号：US391621
申请日：1989-08-01
申请人： Hajime Sakata
发明人： Hajime Sakata
IPC分类号： G02B5/18 , G02F1/29
CPC分类号： G02F1/292 , G02B5/1828 , G02B5/1833
摘要： A functional optical element has at least one diffraction grating in which first and second elements are alternately arranged. At least one of the first and second elements comprises an optically anisotropic substance and the adjacent elements are substantially different from each other. This diffraction grating is so disposed that the arrayed surface of the diffraction grating is located in the path of the incident light beam. The functional optical device is characterized in that an incident light beam having an arbitrary polarization characteristic is functioned as a plurality of light beams which are polarized in the different directions, so that at least part of the incident light beam is subjected to the diffraction effect. The optical condition of at least one of the first and second elements may be varied by a control device.
摘要翻译：功能性光学元件具有至少一个衍射光栅，其中第一和第二元件交替布置。第一和第二元件中的至少一个包括光学各向异性物质，并且相邻元件彼此基本上不同。该衍射光栅被设置成使得衍射光栅的阵列表面位于入射光束的路径中。功能光学元件的特征在于，具有任意偏光特性的入射光束作为在不同方向上被偏振的多个光束而发挥作用，使至少一部分入射光束受到衍射效应。第一和第二元件中的至少一个的光学条件可以通过控制装置来改变。

49. 发明授权

US4707743A Method and apparatus for image conversion with multiple exposures for filtering 失效
标题翻译：用于多次曝光进行图像转换的方法和装置进行滤波
公开(公告)号：US4707743A
公开(公告)日：1987-11-17
申请号：US829071
申请日：1986-02-13
申请人： Jun Tokumitsu , Hajime Sakata
发明人： Jun Tokumitsu , Hajime Sakata
IPC分类号： G02B27/28 , H04N1/195 , H04N1/40 , H04N1/409 , H04N5/225
CPC分类号： H04N1/19515 , G02B27/28 , H04N1/19505 , H04N1/19531 , H04N1/19536 , H04N1/19563 , H04N1/19584 , H04N1/40056 , H04N1/409 , H04N5/2259
摘要： A single image is exposed a plurality of times on a solid state image sensor. Charges induced in each exposure and distributed accordingly are added upon shifting the charge positions in the image sensor and are extracted as electrical signals. The multiple exposures may be made at locations on the sensor which are shifted slightly from each to other, or charges from one exposure may be shifted before a later exposure.
摘要翻译：单个图像在固态图像传感器上暴露多次。在每次曝光中诱发的电荷和相应地分配的电荷在移动图像传感器中的电荷位置并被作为电信号提取时被添加。多个曝光可以在传感器上从每个到另一个稍微偏移的位置处进行，或者在一次曝光之前的电荷可以在稍后的曝光之前移动。

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