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41. 发明授权

US06878959B2 Group III-V semiconductor devices including semiconductor materials made by spatially-selective intermixing of atoms on the group V sublattice 失效
标题翻译： III-V族半导体器件包括通过V族子晶格上的原子的空间选择性混合制成的半导体材料
公开(公告)号：US06878959B2
公开(公告)日：2005-04-12
申请号：US10303044
申请日：2002-11-22
申请人： David P. Bour , Ying-Lan Chang , Tetsuya Takeuchi , Danny E. Mars
发明人： David P. Bour , Ying-Lan Chang , Tetsuya Takeuchi , Danny E. Mars
IPC分类号： H01L21/20 , H01L29/20 , H01L29/205 , H01S5/223 , H01S5/343 , H01L29/06
CPC分类号： H01L29/205 , H01L29/2003
摘要： The group III-V semiconductor device comprises a quantum well layer, barrier layers sandwiching the quantum well layer and a region of a third semiconductor material formed by spatially-selective intermixing of atoms on the group V sublattice between the first semiconductor material of the quantum well layer and the second semiconductor material of the barrier layer. The quantum well layer is a layer of a first semiconductor material that has a band gap energy and a refractive index. The barrier layers are layers of a second semiconductor material that has a higher band gap energy and a lower refractive index than the first semiconductor material. The third semiconductor material has a band gap energy and a refractive index intermediate between the band gap energy and the refractive index, respectively, of the first semiconductor material and the second semiconductor material.
摘要翻译： III-V族半导体器件包括量子阱层，夹着量子阱层的阻挡层和通过在量子阱的第一半导体材料之间的第V族子晶格上的原子空间选择性混合而形成的第三半导体材料的区域层和阻挡层的第二半导体材料。量子阱层是具有带隙能量和折射率的第一半导体材料的层。阻挡层是具有比第一半导体材料更高的带隙能量和较低折射率的第二半导体材料的层。第三半导体材料分别具有第一半导体材料和第二半导体材料的带隙能量和介于带隙能量和折射率之间的折射率。

42. 发明授权

US06875627B2 Structure and method for index-guided buried heterostructure AlGaInN laser diodes 有权
标题翻译：折射率引导掩埋异质结AlGaInN激光二极管的结构与方法
公开(公告)号：US06875627B2
公开(公告)日：2005-04-05
申请号：US10025462
申请日：2001-12-26
申请人： David P. Bour , Michael A. Kneissl , Linda T. Romano
发明人： David P. Bour , Michael A. Kneissl , Linda T. Romano
IPC分类号： H01S5/227 , H01S5/20 , H01S5/323 , H01S5/343 , H01L21/20
CPC分类号： H01S5/32341 , H01S5/2004 , H01S5/2275 , H01S2301/18 , H01S2304/00
摘要： An index-guided buried heterostructure AlGalnN laser diode provides improved mode stability and low threshold current when compared to conventional ridge waveguide structures. A short period superlattice is used to allow adequate cladding layer thickness for confinement without cracking. The intensity of the light lost due to leakage is reduced by about 2 orders of magnitude with an accompanying improvement in the far-field radiation pattern when compared to conventional structures.
摘要翻译：与传统的脊波导结构相比，索引引导掩埋异质结AlGalnN激光二极管提供了改进的模式稳定性和低阈值电流。短周期超晶格用于允许足够的包层厚度进行约束而不会开裂。与常规结构相比，由于泄漏而损失的光的强度降低了约2个数量级，伴随着远场辐射图的改进。

43. 发明授权

US06813295B2 Asymmetric InGaAsN vertical cavity surface emitting lasers 失效
标题翻译：不对称InGaAsN垂直腔表面发射激光器
公开(公告)号：US06813295B2
公开(公告)日：2004-11-02
申请号：US10106678
申请日：2002-03-25
申请人： Tetsuya Takeuchi , Ying-Lan Chang , David P. Bour , Michael H. Leary , Michael R. T. Tan
发明人： Tetsuya Takeuchi , Ying-Lan Chang , David P. Bour , Michael H. Leary , Michael R. T. Tan
IPC分类号： H01S500
CPC分类号： H01S5/18313 , H01S5/3095 , H01S5/32366 , H01S2304/04
摘要： Various asymmetric InGaAsN VCSEL structures that are made using an MOCVD process are presented. Use of the asymmetric structure effectively eliminates aluminum contamination of the quantum well active region.
摘要翻译：提出了使用MOCVD工艺制造的各种非对称InGaAsN VCSEL结构。使用不对称结构有效地消除了量子阱活性区域的铝污染。

44. 发明授权

US06574256B1 Distributed feedback laser fabricated by lateral overgrowth of an active region 有权
标题翻译：通过有源区域的横向过度生长制造的分布式反馈激光器
公开(公告)号：US06574256B1
公开(公告)日：2003-06-03
申请号：US09487409
申请日：2000-01-18
申请人： Daniel Hofstetter , Thomas L. Paoli , Linda T. Romano , Decai Sun , David P. Bour , Michael A. Kneissl , Chris G. Van de Walle , Noble M. Johnson
发明人： Daniel Hofstetter , Thomas L. Paoli , Linda T. Romano , Decai Sun , David P. Bour , Michael A. Kneissl , Chris G. Van de Walle , Noble M. Johnson
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/0213 , H01S5/1228 , H01S5/2009 , H01S5/34333 , H01S2304/12
摘要： A distributed feedback structure includes a substrate material. An active layer has an alloy including at least one of aluminum, gallium, indium, and nitrogen. A first cladding, having an alloy including at least one of the aluminum, the gallium, the indium, and the nitrogen, is on a first side of the active layer. A second cladding, having an alloy including at least one of the aluminum, the gallium, the indium, and the nitrogen, is on a second side of the active layer. Periodic variations of refractive indices in at least one of the first and second claddings provide a distributed optical feedback.
摘要翻译：分布式反馈结构包括基板材料。有源层具有包括铝，镓，铟和氮中的至少一种的合金。具有包括铝，镓，铟和氮中的至少一种的合金的第一包层位于有源层的第一侧上。具有包括铝，镓，铟和氮中的至少一种的合金的第二覆层位于有源层的第二侧上。在第一和第二包层中的至少一个中的折射率的周期性变化提供分布式光学反馈。

45. 发明授权

US06389051B1 Structure and method for asymmetric waveguide nitride laser diode 有权
公开(公告)号：US06389051B1
公开(公告)日：2002-05-14
申请号：US09343939
申请日：1999-06-30
申请人： Christian G. Van de Walle , David P. Bour , Michael A. Kneissl , Linda T. Romano
发明人： Christian G. Van de Walle , David P. Bour , Michael A. Kneissl , Linda T. Romano
IPC分类号： H01S520
CPC分类号： B82Y20/00 , H01S5/2004 , H01S5/2009 , H01S5/2031 , H01S5/305 , H01S5/3054 , H01S5/34333
摘要： A structure and method for an asymmetric waveguide nitride laser diode without need of a p-type waveguide is disclosed. The need for a high aluminum tunnel barrier layer in the laser is avoided.

46. 发明授权

US06365429B1 Method for nitride based laser diode with growth substrate removed using an intermediate substrate 有权
标题翻译：使用中间基板去除生长衬底的基于氮化物的激光二极管的方法
公开(公告)号：US06365429B1
公开(公告)日：2002-04-02
申请号：US09276856
申请日：1999-03-26
申请人： Michael A. Kneissl , David P. Bour , Ping Mei , Linda T. Romano
发明人： Michael A. Kneissl , David P. Bour , Ping Mei , Linda T. Romano
IPC分类号： H01L2100
CPC分类号： H01L21/6835 , B82Y20/00 , H01L21/2007 , H01L27/153 , H01L33/0079 , H01L2221/68359 , H01L2221/68368 , H01L2224/83192 , H01L2224/83895 , H01L2924/01079 , H01S5/0217 , H01S5/34333 , H01S5/4025 , H01S5/4031
摘要： A method for placing nitride laser diode arrays on a thermally conducting substrate is described. The method uses an excimer laser to detach the nitride laser diode from the sapphire growth substrate after an intermediate substrate has been attached to the side opposite the sapphire substrate. A thermally conducting substrate is subsequently bonded to the side where the sapphire substrate was removed.
摘要翻译：描述了将氮化物激光二极管阵列放置在导热衬底上的方法。该方法使用准分子激光器在将中间衬底附着到与蓝宝石衬底相对的一侧附近后从蓝宝石生长衬底分离氮化物激光二极管。导热衬底随后与去除蓝宝石衬底的一侧接合。

47. 发明授权

US5977612A Semiconductor devices constructed from crystallites 失效
标题翻译：由微晶构成的半导体器件
公开(公告)号：US5977612A
公开(公告)日：1999-11-02
申请号：US770403
申请日：1996-12-20
申请人： David P. Bour , Fernando A. Ponce , G. A. Neville Connell , Ross D. Bringans , Noble M. Johnson , Werner K. Goetz , Linda T. Romano
发明人： David P. Bour , Fernando A. Ponce , G. A. Neville Connell , Ross D. Bringans , Noble M. Johnson , Werner K. Goetz , Linda T. Romano
IPC分类号： H01S5/00 , H01L29/201 , H01L33/16 , H01L33/32 , H01S5/323 , H01S5/343 , H01L29/06
CPC分类号： H01L33/32 , B82Y20/00 , H01L29/201 , H01L33/16 , H01S5/34333
摘要： The present invention relates to electronic devices formed in crystallites of III-V nitride materials. Specifically, the present invention simplifies the processing technology required for the fabrication of high-performance electronic devices in III-V nitride materials.
摘要翻译：本发明涉及以III-V族氮化物材料微晶形成的电子器件。具体地说，本发明简化了在III-V族氮化物材料中制造高性能电子器件所需的加工技术。

48. 发明授权

US5766981A Thermally processed, phosphorus- or arsenic-containing semiconductor laser with selective IILD 失效
标题翻译：具有选择性IILD的热处理，含磷或砷的半导体激光器
公开(公告)号：US5766981A
公开(公告)日：1998-06-16
申请号：US368676
申请日：1995-01-04
申请人： Robert L. Thornton , Ross D. Bringans , G. A. Neville Connell , David W. Treat , David P. Bour , Fernando A. Ponce , Noble M. Johnson , Kevin J. Beernink
发明人： Robert L. Thornton , Ross D. Bringans , G. A. Neville Connell , David W. Treat , David P. Bour , Fernando A. Ponce , Noble M. Johnson , Kevin J. Beernink
IPC分类号： H01L21/20 , H01L21/324 , H01S5/00 , H01S5/227 , H01S5/34 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/34326 , H01S5/2275 , H01S5/3413 , H01S5/3414
摘要： Methods for defect-free impurity-induced laser disordering (IILD) of AlGaInP and AlGaAs heterostructures. Phosphorus-doped or As-doped films are used in which silicon serves as a diffusion source and silicon nitride acts as a barrier for selective IILD. High-performance, index-guided (AlGa).sub.0.5 In.sub.0.5 P lasers may be fabricated with this technique, analogous to those made in the AlGaAs material system. The deposition of the diffusion source films preferably is carried out in a low pressure reactor. Also disclosed is a scheme for reducing or eliminating phosphorus overpressure during silicon diffusion into III-V semiconducting material by adding a pre-diffusion anneal step. Defects produced during intermixing are also reduced using a GaInP or GaInP/GaAs cap.
摘要翻译： AlGaInP和AlGaAs异质结构的无缺陷杂质诱导激光无序化（IILD）的方法。使用磷掺杂或As掺杂膜，其中硅用作扩散源，氮化硅用作选择性IILD的屏障。可以使用与AlGaAs材料系统中制造的那些类似的技术来制造高性能，折射率引导（AlGa）0.5In0.5P激光器。扩散源膜的沉积优选在低压反应器中进行。还公开了通过添加预扩散退火步骤来减少或消除硅扩散到III-V半导体材料中的磷过压的方案。在混合过程中产生的缺陷也可以使用GaInP或GaInP / GaAs帽降低。

49. 发明授权

US5412678A Multi-beam, orthogonally-polarized emitting monolithic quantum well lasers 失效
标题翻译：多光束正交极化发射单片量子阱激光器
公开(公告)号：US5412678A
公开(公告)日：1995-05-02
申请号：US948524
申请日：1992-09-22
申请人： David W. Treat , David P. Bour , Thomas L. Paoli
发明人： David W. Treat , David P. Bour , Thomas L. Paoli
IPC分类号： H01S5/00 , H01S5/06 , H01S5/062 , H01S5/065 , H01S5/10 , H01S5/22 , H01S5/34 , H01S5/343 , H01S5/40 , H01S3/103 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/4031 , H01S5/0602 , H01S5/0612 , H01S5/06236 , H01S5/1039 , H01S5/3403 , H01S5/3404 , H01S5/34326
摘要： A QW diode laser generating orthogonally polarized multiple beams. The device incorporates quantum well active regions capable of, transitions to heavy hole and light hole band edges. The heavy hole transition provides TE-mode gain, while the light hole band provides mostly TM-mode gain. By controlling the compositions and thicknesses of the active regions, both modes can be obtained in a monolithic structure. In addition, the resulting laser polarization will be very sensitive to the threshold carrier density. With an intracavity loss modulator in such a structure, the polarization can also be controlled. Other ways of causing side-by-side lasers to operate, respectively, in their TE or TM modes are also described.
摘要翻译：产生正交极化多光束的QW二极管激光器。该器件结合量子阱有源区域，能够过渡到重孔和光孔带边缘。重孔跃迁提供TE模式增益，而光孔频带主要提供TM模式增益。通过控制活性区域的组成和厚度，可以在整体结构中获得两种模式。此外，所得到的激光偏振将对阈值载波密度非常敏感。利用这种结构的腔内损失调制器，也可以控制极化。还描述了使并行激光分别以其TE或TM模式操作的其它方式。

50. 发明授权

US5379312A Semiconductor laser with tensile-strained etch-stop layer 失效
标题翻译：具有拉伸应变蚀刻停止层的半导体激光器
公开(公告)号：US5379312A
公开(公告)日：1995-01-03
申请号：US142742
申请日：1993-10-25
申请人： David P. Bour , David W. Treat
发明人： David P. Bour , David W. Treat
IPC分类号： H01S5/00 , H01S5/20 , H01S5/223 , H01S5/32 , H01S5/323 , H01S3/19
CPC分类号： H01S5/2231 , H01S5/209 , H01S5/3201 , H01S5/32325
摘要： Ridged waveguide and selectively-buried ridged waveguide, index-guided, visible semiconductor lasers incorporating a lattice-mismatched, preferably tensile-strained, etch-stop layer in the design and fabrication of the laser. Compared with other structures with etch-stop layers that are lattice matched, the etch-stop layer of the invention would have greater etch-rate selectivity, and the resulting structure would be more optically transparent with less transverse mode distortion and would present fewer difficulties with layer regrowth. These advantages would translate into greater design flexibility, more reliable fabrication, and better device performance. A preferred material for the etch-stop layer is Ga.sub.x In.sub.1-x P (x>0.5).
摘要翻译：在设计和制造激光器时，引入波导和选择性埋入的脊状波导，折射率引导的可见半导体激光器，其结合了晶格失配的优选的拉伸应变的蚀刻停止层。与具有格子匹配的蚀刻停止层的其他结构相比，本发明的蚀刻停止层将具有更大的蚀刻速率选择性，并且所得到的结构将具有更光学透明度，而较少的横向模式失真，并且将呈现更少的困难层再生长。这些优点将转化为更大的设计灵活性，更可靠的制造和更好的设备性能。用于蚀刻停止层的优选材料是GaxIn1-xP（x> 0.5）。

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