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    • 44. 发明授权
    • Method for fabricating memory unit with T-shaped gate
    • 用T形门制造存储单元的方法
    • US06770532B2
    • 2004-08-03
    • US10435447
    • 2003-05-09
    • Ying-Cheng ChuangChung-Lin HuangChi-Hui Lin
    • Ying-Cheng ChuangChung-Lin HuangChi-Hui Lin
    • H01L21336
    • H01L29/66583H01L21/28114H01L21/823425H01L21/823437H01L21/823468H01L29/42376H01L29/66553H01L29/6656
    • A method for fabricating a memory unit with T-shaped gate. A semiconductor substrate forming a dielectric layer, a first opening, and a second opening is provided in a CMOS process. A silicate glass spacer is formed on the sidewall of the first opening and is thermally oxidized to form a light doped area under the silicate glass spacer. The silicate glass spacer is removed. An insulating spacer is formed on the sidewall of the first opening. A first spacer is formed on a sidewall of the second opening. N-type conducting spacers are formed respectively on sidewalls of the insulating spacer and the first spacer. Gate dielectric layers are formed respectively in the first opening and the second opening. A P-type conducting layer fills with the first opening and the second opening, and a second spacer is formed on a sidewall of a conducting spacer of the second opening.
    • 一种用于制造具有T形门的存储器单元的方法。 在CMOS工艺中提供形成电介质层,第一开口和第二开口的半导体衬底。 硅酸盐玻璃间隔物形成在第一开口的侧壁上,并被热氧化以在硅酸盐玻璃间隔物下面形成光掺杂区域。 去除硅酸盐玻璃间隔物。 绝缘垫片形成在第一开口的侧壁上。 第一间隔件形成在第二开口的侧壁上。 分别在绝缘间隔物和第一间隔物的侧壁上形成N型导电间隔物。 栅电介质层分别形成在第一开口和第二开口中。 P型导电层填充有第一开口和第二开口,并且第二间隔件形成在第二开口的导电间隔件的侧壁上。
    • 45. 发明授权
    • Method for fabricating a split gate flash memory cell
    • 分离栅闪存单元的制造方法
    • US06713349B2
    • 2004-03-30
    • US10426347
    • 2003-04-30
    • Chi-Hui LinChung-Lin Huang
    • Chi-Hui LinChung-Lin Huang
    • H01L21336
    • H01L27/11521H01L27/115
    • A method for fabricating a split gate flash memory cell. First, a substrate having a doped region covered by a first conductive layer is provided. A floating gate and a first insulating layer are successively formed over the substrate on both sides of the first conductive layer. Thereafter, a conformable second insulating layer and a conformable second conductive layer are successively formed on the substrate and the first insulating layer, and then a third insulating layer is formed thereon. The third insulating layer and the second conductive layer are successively etched back to expose the second insulating layer. The third insulating layer is removed using a cap layer formed on the second conductive layer as a mask to form an opening. Finally, the second conductive layer under the opening is removed to form a control gate underlying the cap layer.
    • 一种用于制造分离栅闪存单元的方法。 首先,提供具有被第一导电层覆盖的掺杂区域的基板。 在第一导电层的两侧上的衬底上依次形成浮置栅极和第一绝缘层。 此后,在基板和第一绝缘层上依次形成适形的第二绝缘层和适形的第二导电层,然后在其上形成第三绝缘层。 连续蚀刻第三绝缘层和第二导电层以露出第二绝缘层。 使用形成在第二导电层上的盖层作为掩模去除第三绝缘层以形成开口。 最后,除去开口下方的第二导电层以形成位于盖层下面的控制栅。
    • 46. 发明授权
    • Method for fabricating a source line of a flash memory cell
    • 闪存单元的源极线的制造方法
    • US06649474B1
    • 2003-11-18
    • US10426331
    • 2003-04-30
    • Chi-Hui LinChung-Lin Huang
    • Chi-Hui LinChung-Lin Huang
    • H01L218247
    • H01L27/11521H01L21/28273H01L27/115H01L29/66825
    • A method for fabricating a source line of a flash memory cell. First, a substrate covered by a first insulating layer, a first conductive layer, and a second insulating layer successively is provided. Next, the second insulating layer is patterned to form an opening over the substrate and expose the first conductive layer. Next, a first spacer is formed over the sidewall of the lower opening and a second spacer is formed over the sidewall of the upper opening and the first spacer to make the opening has a “T” profile. Next, the exposed first conductive layer under the opening is removed, and a third spacer over the sidewall of the first spacer and the second spacer is formed. Finally, a source region is formed in the substrate under the opening and the opening is filled with a second conductive layer to form a source line.
    • 一种用于制造闪存单元的源极线的方法。 首先,设置由第一绝缘层,第一导电层和第二绝缘层覆盖的基板。 接下来,对第二绝缘层进行图案化以在衬底上形成开口,并露出第一导电层。 接下来,在下开口的侧壁上形成第一间隔件,并且在上开口和第一间隔件的侧壁上形成第二间隔件,以使开口具有“T”轮廓。 接下来,去除开口下面露出的第一导电层,并且形成第一间隔物的侧壁上的第三间隔物和第二间隔物。 最后,在开口下方的基板中形成源极区域,并且开口填充有第二导电层以形成源极线。
    • 47. 发明授权
    • Compressing/decompressing apparatus and method to compress and
decompress a video graphics signal
    • 压缩/解压缩装置和方法来压缩和解压缩视频图形信号
    • US6088395A
    • 2000-07-11
    • US969602
    • 1997-11-13
    • Chi-Hui WangShang-Tzu Ju
    • Chi-Hui WangShang-Tzu Ju
    • H03M7/30H04N7/26H04N7/46H04N7/12H04N11/02H04N11/04
    • H03M7/3053H04N19/00H04N19/59
    • A compressing/decompressing apparatus comprising a receiver, a memory interface, a compressor and a decompressor is disclosed. The receiver receives a video graphics signal comprising a plurality of video graphics packets, each comprising a plurality of pixels. The memory interface is coupled between the frame buffer memory and the compressing and decompressing device as a data transfer interface. The compressor sequentially receives a video graphics packet of the video graphics signal, truncates a predetermined length of LSBs of each pixel in the video graphics packet to form a compressed video graphics signal comprising of a plurality of compressed video graphics packets, and stores the compressed video graphics signal in a frame buffer memory. The decompressor sequentially receives a compressed video graphics packet of the compressed video graphics signal, recovers each pixel of the compressed video graphics packet with an adjusted value of the predetermined length to form a decompressed video graphics signal comprising of a plurality of decompressed video graphics packets.
    • 公开了一种包括接收器,存储器接口,压缩器和解压缩器的压缩/解压缩装置。 接收器接收包括多个视频图形分组的视频图形信号,每个视频图形分组包括多个像素。 存储器接口作为数据传输接口耦合在帧缓冲存储器和压缩和解压缩装置之间。 压缩器依次接收视频图形信号的视频图形分组,截断视频图形分组中每个像素的预定长度的LSB,以形成包括多个压缩视频图形分组的压缩视频图形信号,并存储压缩视频 图形信号在帧缓冲存储器中。 解压缩器顺序地接收压缩视频图形信号的压缩视频图形分组,以预定长度的调整值恢复压缩视频图形分组的每个像素,以形成包括多个解压缩视频图形分组的解压缩视频图形信号。
    • 49. 发明申请
    • DRIVING DEVICE FOR INTERACTING WITH TOUCH SCREEN PANEL ASSEMBLY AND METHOD FOR INTERACTING SAME WITH TOUCH SCREEN PANEL ASSEMBLY
    • 用于与触摸屏面板组件交互的驱动装置和用于与触摸屏面板组件相互交互的方法
    • US20120212427A1
    • 2012-08-23
    • US13072758
    • 2011-03-27
    • An-Kuo LiChi-Hui Yeh
    • An-Kuo LiChi-Hui Yeh
    • G06F3/041
    • G06F3/03545G06F3/0488G06F2203/04809
    • The invention is to provide a driving device for interacting with a touch screen panel assembly and a method for interacting the same with a touch screen panel assembly. The touch screen panel assembly has a touch screen panel and a processor. The driving device includes a body, a trigger element, a receiving element, a controlling element and a responding element. When the driving device body is placed on the touch screen panel with its bottom side facing the touch screen panel assembly, the trigger element of the driving device will be brought into contact with the touch screen panel, sending signals to the processor to drive the touch screen panel assembly to produce corresponding acousto-optic data. The receiving element of driving device in turn receives such acousto-optic data to produce corresponding reaction, for example, audio or optical data to interact with the touch screen panel assembly.
    • 本发明提供一种用于与触摸屏面板组件相互作用的驱动装置及其与触摸屏面板组件相互作用的方法。 触摸屏面板组件具有触摸屏面板和处理器。 驱动装置包括主体,触发元件,接收元件,控制元件和响应元件。 当驱动装置主体被放置在其底面朝向触摸屏面板组件的触摸屏面板上时,驱动装置的触发元件将与触摸屏面板接触,向处理器发送信号以驱动触摸 屏幕面板组件产生相应的声光数据。 驱动装置的接收元件又接收这样的声光数据,以产生相应的反应,例如音频或光学数据与触摸屏面板组件交互。