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41. 发明授权

US5977689A Biocompatible, implantable hearing aid microactuator 失效
公开(公告)号：US5977689A
公开(公告)日：1999-11-02
申请号：US896969
申请日：1997-07-18
申请人： Armand P. Neukermans
发明人： Armand P. Neukermans
IPC分类号： A61F2/18 , H01L41/09 , H04R17/00 , H04R25/00 , H01L41/08
CPC分类号： H04R25/604 , H01L41/098 , H04R2225/67
摘要： A biocompatible, implantable microactuator (82) for a fully implantable hearing aid system includes a hollow body (84) that has an open first end (88) and, open first and second faces (94a and 94b). Flexible diaphragms (92, 96a and 96b), respectively covering the end (88) and faces (94a and 94b), hermetically seal the body (84). An incompressible liquid (98) fills the body (84). Transducers (102), provided by laminated, stress-biased unimorphs (32 or 62) that are mechanically coupled to the flexible diaphragms (96a and 96b), deflect the diaphragms (96a and 96b) in response to an electrical driving signal. Deflections of the diaphragms (96a and 96b) are coupled by the liquid (98) to the first flexible diaphragm (92). The unimorphs (32 or 62) include a layer of biocompatible metal (36 or 66-68) deposited on one side of a biocompatible piezoelectric ceramic plate (34 or 64) to stress-bias the plate (34 or 64). A thin, biocompatible electrode (44 or 72) coats the other side of the plate (34 or 64).

42. 发明授权

US5895866A Micromachined silicon micro-flow meter 失效
标题翻译：微加工硅微流量计
公开(公告)号：US5895866A
公开(公告)日：1999-04-20
申请号：US786534
申请日：1997-01-21
申请人： Armand P. Neukermans , Timothy G. Slater
发明人： Armand P. Neukermans , Timothy G. Slater
IPC分类号： B81B3/00 , G01F1/26 , G01F1/28 , G01F1/32 , G01N11/00
CPC分类号： G01F1/28 , G01F1/26
摘要： A micromachined, monolithic silicon flow meter includes a vane 28 from which projects a hinge. The hinge is provided by torsion bars 24. The hinge supports the vane 28 for rotation about the torsion bars 24. A deflection sensor, consisting of a torsion sensor 42, incorporated into at least one of the torsion bars 24, senses deflection of the vane 28 responsive to fluid impinging thereupon. The frame 22, the torsion bars 24, the vane 28 and the torsion sensor 42 are all monolithically fabricated in a semi-conductor single-crystal silicon layer of a substrate.
摘要翻译：微加工的单片硅流量计包括叶片28，叶片28从该叶片28突出铰链。铰链由扭杆24提供。铰链支撑叶片28以围绕扭杆24旋转。由扭转传感器42组成的偏转传感器包括在至少一个扭力杆24中，以感测叶片的偏转 28响应于流体撞击它。框架22，扭杆24，叶片28和扭转传感器42都是单片地制造在基板的半导体单晶硅层中。

43. 发明授权

US5881158A Microphones for an implantable hearing aid 失效
标题翻译：可植入助听器的麦克风
公开(公告)号：US5881158A
公开(公告)日：1999-03-09
申请号：US862874
申请日：1997-05-23
申请人： S. George Lesinski , Armand P. Neukermans
发明人： S. George Lesinski , Armand P. Neukermans
IPC分类号： A61F11/04 , A61N1/36 , H04R19/01 , H04R25/00
CPC分类号： H04R25/402 , H04R19/016 , H04R25/405 , H04R25/606 , H04R2225/61 , H04R2225/67
摘要： A implantable sealed microphone (50) includes a diaphragm (52) having a thin central region (54) surrounded by a thicker rim (56). One side of sheet electret material (72) is bonded to the diaphragm (52) while the other side contacts a roughened plate (82). The rim (56) is bonded to a housing (112) thereby hermetically enclosing the electret (72) and the plate (82). The microphone (50) also includes an electrical connector (94) that couples both the plate (82) and the electret (72) to an input of an amplifier (30) included in an implantable hearing aid system (10). Preferably, the microphone (50) is incorporated into a sealed electronics module (100) together with the amplifier (30) and an energy storage device such as a battery that energizes operation of the implantable hearing aid system (10). In such a configuration, the microphone's diaphragm (52) forms a surface of the electronics module's housing (112). An electrical connector (134) couples an output signal from the amplifier (30) to a microactuator (32) of the implantable hearing aid system (10).
摘要翻译：可植入式密封麦克风（50）包括具有由较厚边缘（56）围绕的薄中心区域（54）的隔膜（52）。片状驻极体材料（72）的一面接合到隔膜（52），而另一侧接触粗糙板（82）。轮缘（56）结合到壳体（112）上，从而气密地包围驻极体（72）和板（82）。麦克风（50）还包括将板（82）和驻极体（72）耦合到包括在可植入助听器系统（10）中的放大器（30）的输入端的电连接器（94）。优选地，麦克风（50）与放大器（30）一起并入密封电子模块（100）中，以及诸如电池的能量存储装置，其激励可植入助听器系统（10）的操作。在这种配置中，麦克风的隔膜（52）形成电子模块的壳体（112）的表面。电连接器（134）将来自放大器（30）的输出信号耦合到可植入助听器系统（10）的微致动器（32）。

44. 发明授权

US5648618A Micromachined hinge having an integral torsion sensor 失效
标题翻译：具有整体扭力传感器的微加工铰链
公开(公告)号：US5648618A
公开(公告)日：1997-07-15
申请号：US595042
申请日：1996-01-31
申请人： Armand P. Neukermans , Timothy G. Slater
发明人： Armand P. Neukermans , Timothy G. Slater
IPC分类号： G01C19/5719 , G01P15/12 , G02B26/08 , G02B26/10 , G01L3/00
CPC分类号： G01P15/132 , G01C19/5719 , G02B26/0833 , G02B26/0841 , G02B26/085 , G02B26/0858 , G02B26/101 , G01P2015/0831 , G01P2015/0837
摘要： An elongated micromachined silicon hinge includes an integral four-terminal piezo voltage torsion sensor. The micromachined hinge is disposed between masses that are located at opposite ends of the hinge, and that are fabricated integrally with the hinge by micromachining. Concurrent application of a torsional force to the hinge, by rotation of the masses about the hinge's longitudinal axis, and an electric current through the hinge's silicon, generates a voltage that appears across a pair of voltage sensing electrodes.
摘要翻译：细长的微加工硅铰链包括一体化的四端压电电压扭转传感器。微加工铰链设置在位于铰链相对端的质量块之间，并且通过微加工与铰链一体制造。通过围绕铰链的纵向轴线的质量的旋转以及通过铰链的硅的电流将扭转力同时施加到铰链，产生出现在一对电压感测电极之间的电压。

45. 发明授权

US5629790A Micromachined torsional scanner 失效
标题翻译：微加工扭转扫描仪
公开(公告)号：US5629790A
公开(公告)日：1997-05-13
申请号：US139397
申请日：1993-10-18
申请人： Armand P. Neukermans , Timothy G. Slater
发明人： Armand P. Neukermans , Timothy G. Slater
IPC分类号： G01C19/56 , G01P9/04 , G02B26/08 , G02B26/10
CPC分类号： G02B26/101 , G02B26/0841 , G02B26/085 , G02B26/0858
摘要： A frequency-locked torsional scanner of the type having a micromachined mirror formed on a surface of a silicon wafer section supported within a larger wafer section by a pair of opposed torsion bars. The principal vibrational frequency of the mirror is selected to be at least 20% higher than other modes of vibration. To prevent breakage, the torsion bars are hardened by conversion of at least a surface layer to silicon carbide or nitride. A pair of scanners with orthogonal torsion bars may be mounted in a vacuum enclosure for two-dimensional scanning at different rates suitable for television display. In alternate embodiments, a detector and a scanner may be built on a plate on the same supported wafer section or two scanners may be independently supported or one scanner and one detector may be independently supported as two plates. The mirror may be driven electrostatically, magnetically, or by both methods.
摘要翻译：一种具有微加工反射镜的锁模扭转扫描器，其形成在通过一对相对的扭杆支撑在较大晶片部分内的硅晶片部分的表面上。反射镜的主要振动频率选择为比其他振动模式高至少20％。为了防止断裂，通过至少将表面层转化为碳化硅或氮化物来使扭杆硬化。具有正交扭杆的一对扫描器可以安装在真空外壳中，用于以适合于电视显示的不同速率的二维扫描。在替代实施例中，可以将检测器和扫描仪构建在相同的受支撑晶片部分上的板上，或者可以独立地支撑两个扫描器，或者一个扫描器和一个检测器可以独立地支撑为两个板。反射镜可以静电，磁性或两种方法驱动。

46. 发明授权

US5241366A Thin film thickness monitor 失效
标题翻译：薄膜厚度监视器
公开(公告)号：US5241366A
公开(公告)日：1993-08-31
申请号：US846207
申请日：1992-03-04
申请人： Christopher F. Bevis , Armand P. Neukermans , Stanley E. Stokowski , Ralph C. Wolf , Matthew B. Lutzker
发明人： Christopher F. Bevis , Armand P. Neukermans , Stanley E. Stokowski , Ralph C. Wolf , Matthew B. Lutzker
IPC分类号： G01B11/06
CPC分类号： G01B11/0625
摘要： A thin film thickness monitor using successive reflection of a polychromatic light beam off of reference thin film of variable optical thickness and a sample thin film whose thickness is to be determined, in which a monochromatic light source is used beforehand to first determine the actual optical thickness of the reference thin film at each relative position of the beam and reference thin film. In one embodiment, the ratio S/R of detected light intensity S from the sample thin film and detected light intensity R from the reference thin film is found for each relative position and the position at which the ratio is a maximum is determined. In another embodiment, this ratio is corrected by a corresponding ratio S.sub.1 /R.sub.1 derived from a bare wafer substrate. The sample can then be located behind additional optical surfaces, such as a vacuum port without causing substantial errors. In yet a third embodiment, the detected light intensity R2 from two reflections off of the reference thin film is used in place of intensity R, allowing very thin films to be accurately measured.
摘要翻译：一种薄膜厚度监视器，其使用从可变光学厚度的参考薄膜的多色光束的连续反射以及要确定其厚度的样品薄膜，其中预先使用单色光源以首先确定实际的光学厚度的参考薄膜在光束和参考薄膜的每个相对位置。在一个实施例中，对于每个相对位置找到来自样品薄膜的检测光强度S的比S / R和来自参考薄膜的检测光强度R，并且确定该比率是最大值的位置。在另一个实施例中，该比率由从裸晶片衬底衍生的对应比率S1 / R1进行校正。然后样品可以位于附加的光学表面之后，例如真空端口，而不会引起实质的错误。在第三实施例中，使用来自参考薄膜的两个反射的检测光强度R2代替强度R，从而允许精确测量非常薄的膜。

47. 发明授权

US4971851A Silicon carbide film for X-ray masks and vacuum windows 失效
标题翻译：用于X射线掩模和真空窗的碳化硅膜
公开(公告)号：US4971851A
公开(公告)日：1990-11-20
申请号：US798779
申请日：1985-11-18
申请人： Armand P. Neukermans , Kuo L. Chiang , Frederic N. Schwettmann , Donald R. Bradbury
发明人： Armand P. Neukermans , Kuo L. Chiang , Frederic N. Schwettmann , Donald R. Bradbury
IPC分类号： G03F1/22 , G03F1/48 , G03F1/62
CPC分类号： G03F1/22 , G03F1/48 , G03F1/62 , Y10T428/24322
摘要： A layered structure for use in an X-ray membrane (pellicle) mask or a vacuum window is provided in which an intermediate amorphous layer such as silicon dioxide is grown on a silicon substrate which provides a stress relief medium and surface properties which enhance and improve subsequent process layers by breaking the epitaxial nature of these later deposited layers. Upon subsequent deposition of an inorganic overcoat, such as SiC, on the intermediate amorphous layer, the overcoat produces a nearly defect-free layer with a substantially reduced stress of suitable quality for X-ray lithography mask fabrication. Furthermore, additional alternating layers of a silicon carbide film and an intermediate inorganic layer, such as silicon nitride, can be deposited to obtain an even smoother silicon carbide surface and stronger structure.
摘要翻译：提供了用于X射线膜（防护薄膜）掩模或真空窗的分层结构，其中在硅衬底上生长诸如二氧化硅的中间非晶层，其提供应力消除介质和增强和改善的表面性质通过破坏这些稍后沉积的层的外延性质来实现后续工艺层。随后在中间非晶层上沉积诸如SiC的无机外涂层，外涂层产生几乎无缺陷的层，其具有基本上减少的对X射线光刻掩模制造的合适质量的应力。此外，可以沉积碳化硅膜和中间无机层（例如氮化硅）的附加交替层以获得更平滑的碳化硅表面和更强的结构。

48. 发明授权

US4766324A Particle detection method including comparison between sequential scans 失效
标题翻译：粒子检测方法，包括顺序扫描的比较
公开(公告)号：US4766324A
公开(公告)日：1988-08-23
申请号：US83695
申请日：1987-08-07
申请人： Soheil Saadat , Jiri Pecen , Armand P. Neukermans , George J. Kren
发明人： Soheil Saadat , Jiri Pecen , Armand P. Neukermans , George J. Kren
IPC分类号： G01N21/88 , G01N15/14 , G01N21/94 , G01N21/956 , H01L21/66 , G01N21/00
CPC分类号： G01N21/94 , G01N15/1468 , G01N2021/8867 , G01N2201/1087
摘要： A particle detection method for matching particles detected in two scans of a surface taken at different times in which particles having a light scattering intensity above a collection threshold are first detected and the measured position and scattering intensity therefor stored in a computer memory. Corresponding first and second measured positions from the respective first and second scans are determined by forming a triangle from selected first detected particles and finding those second detected particles which form a variant triangle with matching perimeter and area. From these matching first and second particles a transformation is found for mapping first measured positions to corresponding second positions and vice versa. Areas around corresponding positions of particles having a scattering intensity above a display threshold are examined for matching particles. If not found, the area is reexamined at a reduced threshold. Matching particles are considered to be the same, while unmatched particles are considered to be either added or removed. The method provides an accurate count of particles for process contamination analysis.
摘要翻译：一种颗粒检测方法，用于匹配在不同时间拍摄的表面的两次扫描中检测到的颗粒，其中首先检测具有高于采集阈值的光散射强度的颗粒，并将其测量的位置和散射强度存储在计算机存储器中。通过从所选择的第一检测到的粒子形成三角形并找到形成具有匹配的周长和面积的变形三角形的那些第二检测到的粒子来确定来自相应的第一和第二扫描的相应的第一和第二测量位置。从这些匹配的第一和第二颗粒中，找到用于将第一测量位置映射到对应的第二位置的变换，反之亦然。检查具有高于显示阈值的散射强度的颗粒的相应位置周围的区域以匹配颗粒。如果没有找到，则会以降低的阈值重新检查该区域。认为匹配的颗粒是相同的，而不匹配的颗粒被认为是添加或去除。该方法提供了用于过程污染分析的颗粒的精确计数。

49. 发明授权

US4632871A Anodic bonding method and apparatus for X-ray masks 失效
标题翻译：用于X射线掩模的阳极粘合方法和装置
公开(公告)号：US4632871A
公开(公告)日：1986-12-30
申请号：US580600
申请日：1984-02-16
申请人： Marcos Karnezos , Howard H. Nakanos , Armand P. Neukermans
发明人： Marcos Karnezos , Howard H. Nakanos , Armand P. Neukermans
IPC分类号： G03F1/22 , H01L21/027 , B32B9/00
CPC分类号： G03F1/22 , Y10T428/265
摘要： A structure for use in an X-ray membrane (pellicle) mask is provided in which anodic bonding of layers is employed. Anodic bonding as used here provides a permanent bond between the layers, has zero thickness and provides substantial improvements in the obtained flatness of the mask by eliminating conventional glue for attachment. By applying a voltage between a layer, such as silicon, and a glass plate, and simultaneously heating both elements a permanent bond is established which is extremely flat thus providing minimum misalignment of the mask during subsequent X-ray lithography fabrication.
摘要翻译：提供了用于X射线膜（防护薄膜）掩模的结构，其中采用了层的阳极结合。这里使用的阳极接合提供了层之间的永久性结合，具有零厚度，并且通过消除用于附接的常规粘合剂，可以显着改善所获得的掩模的平整度。通过在诸如硅的层和玻璃板之间施加电压，并同时加热两个元件，建立非常平坦的永久接合，从而在随后的X射线光刻制造期间提供掩模的最小的未对准。

50. 发明授权

US4608326A Silicon carbide film for X-ray masks and vacuum windows 失效
公开(公告)号：US4608326A
公开(公告)日：1986-08-26
申请号：US804331
申请日：1985-12-04
申请人： Armand P. Neukermans , Kuo L. Chiang , Frederic N. Schwettmann , Donald R. Bradbury
发明人： Armand P. Neukermans , Kuo L. Chiang , Frederic N. Schwettmann , Donald R. Bradbury
IPC分类号： G03F1/22 , G03F1/48 , G03F1/62 , G03F9/00
CPC分类号： G03F1/22 , G03F1/48 , G03F1/62 , Y10S430/167
摘要： A layered structure for use in an X-ray membrane (pellicle) mask or a vacuum window is provided in which an intermediate amorphous layer such as silicon dioxide is grown on a silicon substrate which provides a stress relief medium and surface properties which enhance and improve subsequent process layers by breaking the epitaxial nature of these later deposited layers. Upon subsequent deposition of an inorganic overcoat, such as SiC, on the intermediate amorphous layer, the overcoat produces a nearly defect-free layer with a substantially reduced stress of suitable quality for X-ray lithography mask fabrication. Furthermore, additional alternating layers of a silicon carbide film and an intermediate inorganic layer, such as silicon nitride, can be deposited to obtain an even smoother silicon carbide surface and stronger structure.

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