专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明授权

US06921577B2 Water-based metal surface treatment agent 有权
标题翻译：水性金属表面处理剂
公开(公告)号：US06921577B2
公开(公告)日：2005-07-26
申请号：US10169893
申请日：2002-02-19
申请人： Takashi Ouchi , Katsuyuki Tsuchida , Masashi Kumagai
发明人： Takashi Ouchi , Katsuyuki Tsuchida , Masashi Kumagai
IPC分类号： C08L33/14 , C08L63/00 , C09D133/14 , C09D163/00 , C23C26/00 , C23F11/173 , B32B15/08
CPC分类号： C23C26/00 , Y10T428/31511 , Y10T428/31529
摘要： A water-based metal surface treatment agent for the surface treatment of metals including aluminum products such as pre-coated aluminum sheets gives excellent coating film adhesion, flexibility and acid resistance.The water-based metal surface treatment agent contains the following components (1) to (3): (1) A copolymer, containing in a side chain, a diketene or ketoester capable of switching between keto and enol tautomeric forms, and containing at least one hydrophilic side chain containing a cationic group, an anionic group, or a nonionic group; (2) An epoxy resin modified with a phosphoric acid type compound; and (3) A water-soluble curing agent.
摘要翻译：用于表面处理金属的水性金属表面处理剂，包括铝制品如预涂铝片，提供了优异的涂膜粘附性，柔韧性和耐酸性。水性金属表面处理剂含有以下成分（1）〜（3）：（1）在侧链中含有能够在酮和烯醇互变异构体之间切换的双烯酮或酮酯的共聚物，至少含有一个含有阳离子基团，阴离子基团或非离子基团的亲水侧链; （2）用磷酸型化合物改性的环氧树脂; 和（3）水溶性固化剂。

42. 发明授权

US07777078B2 Copper electrolytic solution and electrolytic copper foil produced therewith 有权
标题翻译：铜电解液和电解铜箔
公开(公告)号：US07777078B2
公开(公告)日：2010-08-17
申请号：US10531645
申请日：2003-10-10
申请人： Masashi Kumagai , Mikio Hanafusa
发明人： Masashi Kumagai , Mikio Hanafusa
IPC分类号： C07C223/00 , C07C211/00
CPC分类号： C25D3/38 , C25D1/04 , Y10T428/12903
摘要： The present invention provides a copper electrolytic solution used to obtain a low-profile electrolytic copper foil with a low surface roughness on the rough side (the opposite side from the glossy side) in the production of an electrolytic copper foil using a cathode drum and, more particularly, to provide a copper electrolytic solution used to obtain an electrolytic copper foil that has excellent transmission loss characteristics at a high frequency, can be finely patterned, and has excellent elongation and tensile strength, both at ordinary and high temperatures. The copper electrolytic solution of the present invention contains (A) at least one quaternary amine salt selected from the group consisting of (a) quaternary amine salts obtained by a reaction between epichlorohydrin and an amine compound mixture composed of a secondary amine compound and a tertiary amine compound, and (b) polyepichlorohydrin quaternary amine salts, and (B) an organic sulfur compound.
摘要翻译：本发明提供一种铜电解液，用于在使用阴极鼓的电解铜箔的制造中，在粗糙面（与光面相反的一侧）上获得具有低表面粗糙度的低轮廓电解铜箔，更具体地，提供一种铜电解液，其用于获得在高频下具有优异的透射损耗特性的电解铜箔，可以精细地图案化，并且在常温和高温下都具有优异的伸长率和拉伸强度。本发明的铜电解液含有（A）至少一种选自（a）由表氯醇与由仲胺化合物构成的胺化合物混合物与叔胺化合物反应而得到的季铵盐的季胺盐胺化合物和（b）聚表氯醇季胺盐，和（B）有机硫化合物。

43. 发明申请

US20070131545A1 Packaging device and packaging method for hollow cathode type sputtering target 有权
标题翻译：空心阴极溅射靶的包装装置及包装方法
公开(公告)号：US20070131545A1
公开(公告)日：2007-06-14
申请号：US10575937
申请日：2004-09-14
申请人： Takeo Okabe , Masaru Nagasawa
发明人： Takeo Okabe , Masaru Nagasawa
IPC分类号： C23C14/00
CPC分类号： H01J37/342 , B65B31/04 , B65D81/2023
摘要： Provided are a packaging device and packaging method of a hollow cathode sputtering target which installs, in the hollow cathode sputtering target, a cover of a size capable of covering a void of the target; provides one or more through-holes to the cover; places a resin bag over them, and performs vacuum suction to the inside of the bag. This packaging device and packaging method of a hollow cathode sputtering target is capable of performing vacuum suction even to the inside of the hollow portion covered with the resin bag.
摘要翻译：提供一种中空阴极溅射靶的包装装置和封装方法，其在中空阴极溅射靶中安装能够覆盖靶的空隙的尺寸的盖; 向盖子提供一个或多个通孔; 在其上放置树脂袋，并对袋子内部进行真空抽吸。这种包装装置和中空阴极溅射靶的包装方法即使在覆盖有树脂袋的中空部分的内部也能够进行真空吸附。

44. 发明申请

US20070074790A1 Nickel alloy sputtering target and nickel alloy thin film 有权
标题翻译：镍合金溅射靶和镍合金薄膜
公开(公告)号：US20070074790A1
公开(公告)日：2007-04-05
申请号：US10575888
申请日：2004-10-14
申请人： Yasuhiro Yamakoshi , Ryo Suzuki
发明人： Yasuhiro Yamakoshi , Ryo Suzuki
IPC分类号： C22C19/03
CPC分类号： C23C14/3414 , C22C19/03
摘要： The present invention relates to a nickel alloy sputtering target comprising 1 to 30 at % of Cu; 2 to 25 at % of at least one element selected from among V, Cr, Al, Si, Ti and Mo; remnant Ni and unavoidable impurities so as to inhibit the Sn diffusion between a solder bump and a substrate layer or a pad. Provided are a nickel alloy sputtering target and a nickel alloy thin film for forming a barrier layer having excellent wettability with the Pb-free Sn solder or Sn—Pb solder bump, and capable of inhibiting the diffusion of Sn being a soldering component and effectively preventing the reaction with the substrate layer upon forming a Pb-free Sn solder or Sn—Pb solder bump on a substrate such as a semiconductor wafer or electronic circuit or a substrate layer or pad of the wiring or electrode formed thereon.
摘要翻译：本发明涉及包含1至30原子％的Cu的镍合金溅射靶; 2〜25at％的选自V，Cr，Al，Si，Ti和Mo中的至少一种元素; 残留的Ni和不可避免的杂质，以抑制焊料凸块与衬底层或衬垫之间的Sn扩散。提供了一种用于形成与无铅Sn焊料或Sn-Pb焊料凸块具有优异润湿性的阻挡层的镍合金溅射靶和镍合金薄膜，并且能够抑制作为焊接成分的Sn的扩散并有效地防止在诸如半导体晶片或电子电路的基板或其上形成的布线或电极的基板层或焊盘上形成无铅Sn焊料或Sn-Pb焊料凸块时与基板层的反应。

45. 发明申请

US20070042201A1 Copper electrolytic solution containing quaternary amine compound with specific skeleton and organo-sulfur compound as additives, and electrolytic copper foil manufactured using the same 有权
标题翻译：含有具有特定骨架和有机硫化合物的季胺化合物作为添加剂的铜电解液和使用其的电解铜箔
公开(公告)号：US20070042201A1
公开(公告)日：2007-02-22
申请号：US11586906
申请日：2006-10-26
申请人： Masashi Kumagai , Mikio Hanafusa
发明人： Masashi Kumagai , Mikio Hanafusa
IPC分类号： B32B15/04 , B32B15/08 , C22C9/00
CPC分类号： C25D3/38 , H05K1/09 , Y10T428/31678 , Y10T428/31681
摘要： It is an object of the present invention to obtain a low-profile electrolytic copper foil with a small surface roughness on the side of the rough surface (the opposite side from the lustrous surface) in the manufacture of an electrolytic copper foil using a cathode drum, and more particularly to obtain an electrolytic copper foil which allows fine patterning, and which is superior in terms of elongation and tensile strength at ordinary temperatures and high temperatures. Furthermore, it is an object of the present invention to obtain a copper electrolytic solution for this purpose. This copper electrolytic solution contains as additives an organo-sulfur compound and a quaternary amine compound with a specific skeleton.
摘要翻译：本发明的目的是在使用阴极鼓的电解铜箔的制造中获得在粗糙表面侧（与光泽表面相反的一侧）具有较小表面粗糙度的薄型电解铜箔更具体地说是获得能够精细图案化的电解铜箔，并且在常温和高温下在伸长率和拉伸强度方面优异。此外，本发明的目的是获得用于该目的的铜电解液。该铜电解液含有有机硫化合物和具有特定骨架的季胺化合物作为添加剂。

46. 发明申请

US20070018138A1 Highly pure hafnium material, target thin film comprising the same and method for producing highly pure hafnium 失效
标题翻译：高纯铪材料，包含其的目标薄膜和用于生产高纯铪的方法
公开(公告)号：US20070018138A1
公开(公告)日：2007-01-25
申请号：US10565767
申请日：2004-04-15
申请人： Yuichiro Shindo
发明人： Yuichiro Shindo
IPC分类号： C08F4/44
CPC分类号： C22B34/14 , C22B1/08 , C22B3/0005 , C22B9/228 , Y02P10/234
摘要： Provided is a manufacturing method of high purity hafnium including the steps of making aqueous solution of chloride of hafnium, thereafter removing zirconium therefrom via solvent extraction, performing neutralization treatment to obtain hafnium oxide, further performing chlorination to obtain hafnium chloride, obtaining hafnium sponge via reducing said hafnium chloride, and performing electron beam melting to the hafnium sponge in order to obtain a hafnium ingot, as well as a high purity hafnium material obtained thereby and a target and thin film formed from such material. The present invention relates to a high purity hafnium material with reduced zirconium content contained in the hafnium, a target and thin film formed from such material, and the manufacturing method thereof, and provides efficient and stable manufacturing technology, a high purity hafnium material obtained according to such manufacturing technology, and a target and high purity hafnium thin film formed from such material.
摘要翻译：提供了一种高纯度铪的制造方法，包括以下步骤：制备铪的氯化物水溶液，然后通过溶剂萃取除去锆，进行中和处理以获得氧化铪，进一步进行氯化以获得氯化铪，通过还原得到铪海绵所述氯化铪，并且对铪海绵进行电子束熔化以获得铪锭，以及由此获得的高纯度铪材料和由这种材料形成的靶和薄膜。本发明涉及铪中含有的锆含量降低的高纯度铪材料，由该材料形成的靶材和薄膜及其制造方法，提供高效稳定的制造工艺，根据对这种制造技术，以及由这种材料形成的目标和高纯度的铪薄膜。

47. 发明申请

US20060292028A1 High-purity ni-v alloy target therefrom high-purity ni-v alloy thin film and process for producing high-purity ni-v alloy 有权
标题翻译：高纯度ni-v合金靶材及其高纯度ni-v合金薄膜及其制备方法
公开(公告)号：US20060292028A1
公开(公告)日：2006-12-28
申请号：US10570748
申请日：2004-09-08
申请人： Yuichiro Shindo , Yasuhiro Yamakoshi
发明人： Yuichiro Shindo , Yasuhiro Yamakoshi
IPC分类号： C22C19/03
CPC分类号： C23C14/3414 , C22C19/03
摘要： Provided are a high purity Ni—V alloy, high purity Ni—V alloy target and high purity Ni—V alloy thin film wherein the purity of the Ni—V alloy excluding Ni, V and gas components is 99.9 wt % or higher, and the V content variation among ingots, targets or thin films is within 0.4%. With these high purity Ni—V alloy, high purity Ni—V alloy target and high purity Ni—V alloy thin film having a purity of 99.9 wt % or higher, the variation among ingots, targets or thin films is small, the etching property is improved, and isotopic elements such as U and Th that emit alpha particles having an adverse effect on microcircuits in a semiconductor device are reduced rigorously. And further provided is a manufacturing method of such high purity Ni—V alloy capable of effectively reducing the foregoing impurities.
摘要翻译：提供了一种高纯度Ni-V合金，高纯Ni-V合金靶和高纯度Ni-V合金薄膜，其中不含Ni，V和气体成分的Ni-V合金的纯度为99.9重量％以上，锭，靶或薄膜之间的V含量变化在0.4％以内。使用这些高纯度Ni-V合金，纯度为99.9重量％以上的高纯Ni-V合金靶和高纯度Ni-V合金薄膜，锭，靶或薄膜之间的变化小，蚀刻性并且严格降低了发射对半导体器件中的微电路具有不利影响的α粒子的U和Th的同位素元素。并且还提供了能够有效地减少上述杂质的这种高纯度Ni-V合金的制造方法。

48. 发明申请

US20060178000A1 Epitaxial growth process 有权
标题翻译：外延生长过程
公开(公告)号：US20060178000A1
公开(公告)日：2006-08-10
申请号：US10563105
申请日：2004-04-28
申请人： Misao Takakusaki , Susumu Kanai
发明人： Misao Takakusaki , Susumu Kanai
IPC分类号： H01L21/28
CPC分类号： C30B29/40 , C30B23/02 , H01L21/02392 , H01L21/02463 , H01L21/02543 , H01L21/02631
摘要： An epitaxial growth method forming a semiconductor thin film including a heterojunction of a group III-V compound semiconductor by means of molecular beam epitaxy. The method is configured to include: a first step of irradiating a molecular beam of at least one of group III elements and a molecular beam of a first group V element to form a first compound semiconductor layer; a second step of stopping the irradiation of the molecular beam of the group III element and the molecular beam of the first group V element to halt growth until an amount of the first group V element supplied is reduced to 1/10 or less of a supply of the first group V element in the first step; and a third step of irradiating a molecular beam of at least one of the group III elements and a molecular beam of a second group V element to form a second compound semiconductor layer, which is different from the first compound semiconductor, on the first compound semiconductor layer.
摘要翻译：通过分子束外延形成包含III-V族化合物半导体的异质结的半导体薄膜的外延生长方法。该方法被配置为包括：照射III族元素中的至少一种的分子束和第一族V元素的分子束以形成第一化合物半导体层的第一步骤; 停止III族元素的分子束和第一族V元素的分子束的照射的第二步骤，以停止生长，直到第一组V元素的供给量减少到供给量的1/10以下的第一组V元素在第一步; 以及第三步骤，在第一化合物半导体上照射III族元素中的至少一种的分子束和第二族V元素的分子束以形成与第一化合物半导体不同的第二化合物半导体层层。

49. 发明授权

US07045871B2 II-VI compound semiconductor crystal and photoelectric conversion device 有权
标题翻译： II-VI化合物半导体晶体和光电转换器件
公开(公告)号：US07045871B2
公开(公告)日：2006-05-16
申请号：US11115182
申请日：2005-04-27
申请人： Katsumi Kishino , Ichiro Nomura , Song-Bek Che , Kenji Sato
发明人： Katsumi Kishino , Ichiro Nomura , Song-Bek Che , Kenji Sato
IPC分类号： H01L31/272
CPC分类号： H01L33/28 , H01L31/0296
摘要： Since a ZnTe-base compound semiconductor crystal was designed so as to have, on a ZnTe-base compound semiconductor layer, an n-type contact layer which includes a superlattice layer having n-type CdSe and n-type ZnTe grown with each other or a ZnCdSeTe-graded layer, it was made possible to raise carrier concentration of the n-type contact layer, and to control the conductivity type in a relatively easy manner.Moreover, formation of a CdSe/ZnTe superlattice layer or a ZnCdSeTe-graded layer between the contact layer and an electrode can prevent electric resistance from being increased due to difference in the energy gaps. Since CdSe and ZnTe, composing the CdSe/ZnTe superlattice or ZnCdSeTe composition-graded layer, have relatively close lattice constants, formation thereof is less likely to adversely affect the crystallinity of the semiconductor crystal, which is advantageous in obtaining the semiconductor crystal with an excellent quality.
摘要翻译：由于ZnTe基化合物半导体晶体被设计成在ZnTe基化合物半导体层上具有n型接触层，该n型接触层包括彼此生长的具有n型CdSe和n型ZnTe的超晶格层，或者 ZnCdSeTe梯度层，可以提高n型接触层的载流子浓度，并以相对容易的方式控制导电类型。此外，在接触层和电极之间形成CdSe / ZnTe超晶格层或ZnCdSeTe梯度层可以防止由于能隙的差异而导致的电阻增加。由于构成CdSe / ZnTe超晶格或ZnCdSeTe组成梯度层的CdSe和ZnTe具有相对较近的晶格常数，所以其形成不太可能不利地影响半导体晶体的结晶度，这有利于获得具有优异的半导体晶体质量。

50. 发明申请

US20060037680A1 Nickel alloy sputtering target 审中-公开
标题翻译：镍合金溅射靶
公开(公告)号：US20060037680A1
公开(公告)日：2006-02-23
申请号：US10540638
申请日：2003-10-06
申请人： Yasuhiro Yamakoshi
发明人： Yasuhiro Yamakoshi
IPC分类号： C22C19/03
CPC分类号： C22C19/03 , C23C14/3414
摘要： A nickel alloy sputtering target containing 0.5 to 10 at % of tantalum in nickel, in which inevitable impurities excluding gas components are 100 wtppm or less. Provided is a nickel alloy sputtering target, and the manufacturing technology thereof, enabling the formation of a thermally stable silicide (NiSi) film, unlikely to cause the coagulation of films or excessive formation of silicides, having few generation of particles upon forming the sputtered film, having favorable uniformity and superior in the plastic workability to the target, and which is particularly effective for the manufacture of a gate electrode material (thin film).
摘要翻译：含镍0.5〜10原子％的镍的镍合金溅射靶，不含气体成分的不可避免的杂质为100重量ppm以下。提供了一种镍合金溅射靶及其制造技术，能够形成热稳定性硅化物（NiSi）膜，不易引起膜的凝结或过度形成硅化物，在形成溅射膜时几乎不产生颗粒具有良好的均匀性和对靶的塑性加工性优异，并且对于制造栅电极材料（薄膜）特别有效。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式