专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07045871B2 II-VI compound semiconductor crystal and photoelectric conversion device 有权
标题翻译： II-VI化合物半导体晶体和光电转换器件
公开(公告)号：US07045871B2
公开(公告)日：2006-05-16
申请号：US11115182
申请日：2005-04-27
申请人： Katsumi Kishino , Ichiro Nomura , Song-Bek Che , Kenji Sato
发明人： Katsumi Kishino , Ichiro Nomura , Song-Bek Che , Kenji Sato
IPC分类号： H01L31/272
CPC分类号： H01L33/28 , H01L31/0296
摘要： Since a ZnTe-base compound semiconductor crystal was designed so as to have, on a ZnTe-base compound semiconductor layer, an n-type contact layer which includes a superlattice layer having n-type CdSe and n-type ZnTe grown with each other or a ZnCdSeTe-graded layer, it was made possible to raise carrier concentration of the n-type contact layer, and to control the conductivity type in a relatively easy manner.Moreover, formation of a CdSe/ZnTe superlattice layer or a ZnCdSeTe-graded layer between the contact layer and an electrode can prevent electric resistance from being increased due to difference in the energy gaps. Since CdSe and ZnTe, composing the CdSe/ZnTe superlattice or ZnCdSeTe composition-graded layer, have relatively close lattice constants, formation thereof is less likely to adversely affect the crystallinity of the semiconductor crystal, which is advantageous in obtaining the semiconductor crystal with an excellent quality.
摘要翻译：由于ZnTe基化合物半导体晶体被设计成在ZnTe基化合物半导体层上具有n型接触层，该n型接触层包括彼此生长的具有n型CdSe和n型ZnTe的超晶格层，或者 ZnCdSeTe梯度层，可以提高n型接触层的载流子浓度，并以相对容易的方式控制导电类型。此外，在接触层和电极之间形成CdSe / ZnTe超晶格层或ZnCdSeTe梯度层可以防止由于能隙的差异而导致的电阻增加。由于构成CdSe / ZnTe超晶格或ZnCdSeTe组成梯度层的CdSe和ZnTe具有相对较近的晶格常数，所以其形成不太可能不利地影响半导体晶体的结晶度，这有利于获得具有优异的半导体晶体质量。

2. 发明申请

US20050189553A1 II-VI compound semiconductor crystal and photoelectric conversion device 有权
标题翻译： II-VI化合物半导体晶体和光电转换器件
公开(公告)号：US20050189553A1
公开(公告)日：2005-09-01
申请号：US11115182
申请日：2005-04-27
申请人： Katsumi Kishino , Ichiro Nomura , Song-Bek Che , Kenji Sato
发明人： Katsumi Kishino , Ichiro Nomura , Song-Bek Che , Kenji Sato
IPC分类号： H01L31/0296 , H01L33/06 , H01L33/28 , H01L33/40 , H01L29/22
CPC分类号： H01L33/28 , H01L31/0296
摘要： Since a ZnTe-base compound semiconductor crystal was designed so as to have, on a ZnTe-base compound semiconductor layer, an n-type contact layer which includes a superlattice layer having n-type CdSe and n-type ZnTe grown with each other or a ZnCdSeTe-graded layer, it was made possible to raise carrier concentration of the n-type contact layer, and to control the conductivity type in a relatively easy manner. Moreover, formation of a CdSe/ZnTe superlattice layer or a ZnCdSeTe-graded layer between the contact layer and an electrode can prevent electric resistance from being increased due to difference in the energy gaps. Since CdSe and ZnTe, composing the CdSe/ZnTe superlattice or ZnCdSeTe composition-graded layer, have relatively close lattice constants, formation thereof is less likely to adversely affect the crystallinity of the semiconductor crystal, which is advantageous in obtaining the semiconductor crystal with an excellent quality.
摘要翻译：由于ZnTe基化合物半导体晶体被设计成在ZnTe基化合物半导体层上具有n型接触层，该n型接触层包括彼此生长的具有n型CdSe和n型ZnTe的超晶格层，或者 ZnCdSeTe梯度层，可以提高n型接触层的载流子浓度，并以相对容易的方式控制导电类型。此外，在接触层和电极之间形成CdSe / ZnTe超晶格层或ZnCdSeTe梯度层可以防止由于能隙的差异而导致的电阻增加。由于构成CdSe / ZnTe超晶格或ZnCdSeTe组成梯度层的CdSe和ZnTe具有相对较近的晶格常数，所以其形成不太可能不利地影响半导体晶体的结晶度，这有利于获得具有优异的半导体晶体质量。

3. 发明授权

US06933519B2 II-VI compound semiconductor crystal 有权
标题翻译： II-VI化合物半导体晶体
公开(公告)号：US06933519B2
公开(公告)日：2005-08-23
申请号：US10381880
申请日：2002-08-02
申请人： Katsumi Kishino , Ichiro Nomura , Song-Bek Che , Kenji Sato
发明人： Katsumi Kishino , Ichiro Nomura , Song-Bek Che , Kenji Sato
IPC分类号： H01L31/0296 , H01L33/06 , H01L33/28 , H01L33/40 , H01L29/06
CPC分类号： H01L33/28 , H01L31/0296
摘要： The present invention relates to a II-VI compound semiconductor crystal comprising an n-type contact layer which includes a superlattice layer comprising n-type CdSe and n-type ZnTe stacked with each other, on a ZnTe-base compound semiconductor layer; a A II-VI compound semiconductor crystal comprising an n-type contact layer which includes an n-type ZnCdSeTe composition-graded layer in which composition of Zn, Cd, Se and Te is gradually varies, on a ZnTe-base compound semiconductor layer; a II-VI compound semiconductor crystal comprising a p-type contact layer which includes a superlattice layer comprising p-type CdSe and p-type ZnTe stacked with each other, on a CdSe-base compound semiconductor layer; and a II-VI compound semiconductor crystal comprising a p-type contact layer which includes a p-type ZnCdSeTe composition-graded layer in which composition of Zn, Cd, Se and Te is gradually varied, on a CdSe-base compound semiconductor layer.
摘要翻译：本发明涉及包含n型接触层的II-VI族化合物半导体晶体，所述n型接触层包括在ZnTe基化合物半导体层上彼此堆叠的包含n型CdSe和n型ZnTe的超晶格层; 包括在ZnTe基化合物半导体层上包含Zn，Cd，Se和Te的组成逐渐变化的n型ZnCdSeTe组成梯度层的n型接触层的A II-VI化合物半导体晶体; 包括p型接触层的II-VI族化合物半导体晶体，其包含在CdSe基化合物半导体层上彼此堆叠的包含p型CdSe和p型ZnTe的超晶格层; 以及包含在CdSe基化合物半导体层上包含Zn，Cd，Se和Te的组成逐渐变化的p型ZnCdSeTe组成分级层的p型接触层的II-VI族化合物半导体晶体。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式