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31. 发明授权

US09680053B2 Nitride semiconductor device 有权
公开(公告)号：US09680053B2
公开(公告)日：2017-06-13
申请号：US14934244
申请日：2015-11-06
申请人： Panasonic Intellectual Property Management Co., Ltd.
发明人： Masayuki Kuroda , Manabu Yanagihara , Shinichi Oki
IPC分类号： H01L33/06 , H01L33/00 , H01L29/778 , H01L33/32 , H01L29/20 , H01L25/16 , H01L27/15 , H01L33/18 , H01L29/872 , H01L33/36
CPC分类号： H01L33/06 , H01L25/167 , H01L27/15 , H01L29/2003 , H01L29/7786 , H01L29/872 , H01L33/0008 , H01L33/0025 , H01L33/0033 , H01L33/0041 , H01L33/18 , H01L33/32 , H01L33/36 , H01L2924/0002 , H01L2924/00
摘要： A nitride semiconductor device includes a transistor having a semiconductor stacked body formed on a substrate, and a pn light-emitting body formed on the semiconductor stacked body. The semiconductor stacked body includes a first nitride semiconductor layer, and a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a bandgap wider than that of the first nitride semiconductor layer. The transistor includes: the semiconductor stacked body; a source electrode and a drain electrode formed away from each other on the semiconductor stacked body; and a gate electrode provided between the source electrode and the drain electrode and formed away from the source electrode and the drain electrode. The pn light-emitting body includes a p-type nitride semiconductor layer and an n-type nitride semiconductor layer to emit a light beam having an energy value higher than an electron trapping level existing in the semiconductor stacked body, in which the p-type nitride semiconductor layer of the pn light-emitting body is electrically connected to the gate electrode, and functions as a gate of the transistor.

32. 发明申请

US20150021647A1 LUMINOUS ELEMENT 审中-公开
标题翻译： LUMINOUS元素
公开(公告)号：US20150021647A1
公开(公告)日：2015-01-22
申请号：US14509880
申请日：2014-10-08
申请人： LG INNOTEK CO., LTD.
发明人： June O SONG
IPC分类号： H01L33/00 , H01L33/38 , H01L23/60 , H01L33/60
CPC分类号： H01L33/0033 , H01L23/60 , H01L27/15 , H01L33/385 , H01L33/405 , H01L33/60 , H01L2924/0002 , H01L2924/00
摘要： A light emitting device according to the embodiment includes a first conductive semiconductor layer; an active layer over the first conductive semiconductor layer; a second conductive semiconductor layer over the active layer; a bonding layer over the second conductive semiconductor layer; a schottky diode layer over the bonding layer; an insulating layer for partially exposing the bonding layer, the schottky diode layer, and the first conductive semiconductor layer; a first electrode layer electrically connected to both of the first conductive semiconductor layer and the schottky diode layer; and a second electrode layer electrically connected to the bonding layer.
摘要翻译：根据实施例的发光器件包括第一导电半导体层; 在第一导电半导体层上方的有源层; 在有源层上的第二导电半导体层; 在第二导电半导体层上的结合层; 结合层上的肖特基二极管层; 用于部分地暴露所述接合层，所述肖特基二极管层和所述第一导电半导体层的绝缘层; 与第一导电半导体层和肖特基二极管层电连接的第一电极层; 以及与所述接合层电连接的第二电极层。

33. 发明授权

US08907363B2 Light emitting device, light emitting device package and lighting system including the same 有权
标题翻译：发光装置，发光装置封装和包括其的照明系统
公开(公告)号：US08907363B2
公开(公告)日：2014-12-09
申请号：US13963877
申请日：2013-08-09
申请人： LG Innotek Co., Ltd.
发明人： Sung Min Hwang , Hyun Don Song , Hyun Kyong Cho
IPC分类号： H01L33/10 , H01L33/48 , H01L33/14 , H01L33/40 , H01L33/42
CPC分类号： H01L33/60 , H01L33/0033 , H01L33/145 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/48 , H01L33/62 , H01L2224/48091 , H01L2924/12032 , H01L2933/0016 , H01L2924/00014 , H01L2924/00
摘要： A light emitting device is described, including a second conductive type semiconductor layer; an active layer over the second conductive type semiconductor layer; a first conductive type semiconductor layer over the active layer; a second electrode in a first region under the second conductive type semiconductor layer; a current blocking layer including a metal; and a first electrode over the first conductive type semiconductor layer. Further, the first electrode has at least one portion that vertically overlaps the current blocking layer.
摘要翻译：描述了包括第二导电类型半导体层的发光器件; 在所述第二导电类型半导体层上方的有源层; 在有源层上的第一导电类型半导体层; 在第二导电类型半导体层下面的第一区域中的第二电极; 包括金属的电流阻挡层; 以及位于第一导电类型半导体层上的第一电极。此外，第一电极具有与电流阻挡层垂直重叠的至少一个部分。

34. 发明授权

US08884321B2 Luminous element 有权
标题翻译：发光元件
公开(公告)号：US08884321B2
公开(公告)日：2014-11-11
申请号：US12936477
申请日：2009-04-06
申请人： June O. Song
发明人： June O. Song
IPC分类号： H01L33/00 , H01L33/38 , H01L33/40 , H01L27/15
CPC分类号： H01L33/0033 , H01L23/60 , H01L27/15 , H01L33/385 , H01L33/405 , H01L33/60 , H01L2924/0002 , H01L2924/00
摘要： A light emitting device according to the embodiment includes a first conductive semiconductor layer; an active layer over the first conductive semiconductor layer; a second conductive semiconductor layer over the active layer; a bonding layer over the second conductive semiconductor layer; a schottky diode layer over the bonding layer; an insulating layer for partially exposing the bonding layer, the schottky diode layer, and the first conductive semiconductor layer; a first electrode layer electrically connected to both of the first conductive semiconductor layer and the schottky diode layer; and a second electrode layer electrically connected to the bonding layer.
摘要翻译：根据实施例的发光器件包括第一导电半导体层; 在第一导电半导体层上方的有源层; 在有源层上的第二导电半导体层; 在第二导电半导体层上的结合层; 结合层上的肖特基二极管层; 用于部分地暴露所述接合层，所述肖特基二极管层和所述第一导电半导体层的绝缘层; 与第一导电半导体层和肖特基二极管层电连接的第一电极层; 以及与所述接合层电连接的第二电极层。

35. 发明授权

US08530926B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08530926B2
公开(公告)日：2013-09-10
申请号：US13330207
申请日：2011-12-19
申请人： Sung Min Hwang
发明人： Sung Min Hwang
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L27/15 , H01L33/0033 , H01L33/025 , H01L33/32 , H01L33/40 , H01L2224/48091 , H01L2224/48247 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： Embodiments relate to a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises: a substrate; a light emitting structure over the substrate, the light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, wherein the first conductive type semiconductor layer is partially exposed; a first region having a first concentration and provided at a region of the second conductive type semiconductor layer; a second region having a second concentration and provided at another region of the second conductive type semiconductor layer; and a second electrode over the second conductive type semiconductor layer.
摘要翻译：实施例涉及发光器件，发光器件封装和照明系统。发光器件包括：衬底; 在所述基板上的发光结构，所述发光结构包括第一导电类型半导体层，第二导电类型半导体层和在所述第一导电类型半导体层和所述第二导电类型半导体层之间的有源层，其中所述第一导电半导体层部分露出; 具有第一浓度并设置在所述第二导电型半导体层的区域的第一区域; 具有第二浓度并设置在所述第二导电类型半导体层的另一区域的第二区域; 以及位于第二导电类型半导体层上的第二电极。

36. 发明授权

US08513681B2 Light emitting device, light emitting device package and lighting system including the same 有权
标题翻译：发光装置，发光装置封装和包括其的照明系统
公开(公告)号：US08513681B2
公开(公告)日：2013-08-20
申请号：US13526411
申请日：2012-06-18
申请人： Sung Min Hwang , Hyun Don Song , Hyun Kyong Cho
发明人： Sung Min Hwang , Hyun Don Song , Hyun Kyong Cho
IPC分类号： H01L27/15
CPC分类号： H01L33/60 , H01L33/0033 , H01L33/145 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/48 , H01L33/62 , H01L2224/48091 , H01L2924/12032 , H01L2933/0016 , H01L2924/00014 , H01L2924/00
摘要： A light emitting device including a second conductive type semiconductor layer; an active layer over the second conductive type semiconductor layer; a first conductive type semiconductor layer over the active layer; a second electrode in a first region under the second conductive type semiconductor layer; a current blocking layer including a metal; and a first electrode over the first conductive type semiconductor layer. Further, the first electrode has at least one portion that vertically overlaps the current blocking layer.
摘要翻译：一种发光器件，包括第二导电类型半导体层; 在所述第二导电类型半导体层上方的有源层; 在有源层上的第一导电类型半导体层; 在第二导电类型半导体层下面的第一区域中的第二电极; 包括金属的电流阻挡层; 以及位于第一导电类型半导体层上的第一电极。此外，第一电极具有与电流阻挡层垂直重叠的至少一个部分。

37. 发明申请

US20120256226A1 LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM INCLUDING THE SAME 有权
标题翻译：发光装置，发光装置包装和包括其的照明系统
公开(公告)号：US20120256226A1
公开(公告)日：2012-10-11
申请号：US13526411
申请日：2012-06-18
申请人： Sung Min HWANG , Hyun Don SONG , Hyun Kyong CHO
发明人： Sung Min HWANG , Hyun Don SONG , Hyun Kyong CHO
IPC分类号： H01L33/60
CPC分类号： H01L33/60 , H01L33/0033 , H01L33/145 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/48 , H01L33/62 , H01L2224/48091 , H01L2924/12032 , H01L2933/0016 , H01L2924/00014 , H01L2924/00
摘要： A light emitting device including a second conductive type semiconductor layer; an active layer over the second conductive type semiconductor layer; a first conductive type semiconductor layer over the active layer; a second electrode in a first region under the second conductive type semiconductor layer; a current blocking layer including a metal; and a first electrode over the first conductive type semiconductor layer. Further, the first electrode has at least one portion that vertically overlaps the current blocking layer.
摘要翻译：一种发光器件，包括第二导电类型半导体层; 在所述第二导电类型半导体层上方的有源层; 在有源层上的第一导电类型半导体层; 在第二导电类型半导体层下面的第一区域中的第二电极; 包括金属的电流阻挡层; 以及位于第一导电类型半导体层上的第一电极。此外，第一电极具有与电流阻挡层垂直重叠的至少一个部分。

38. 发明授权

US08222661B2 Light emitting device, light emitting device package and lighting system including the same 有权
标题翻译：发光装置，发光装置封装和包括其的照明系统
公开(公告)号：US08222661B2
公开(公告)日：2012-07-17
申请号：US12772985
申请日：2010-05-03
申请人： Sung Min Hwang , Hyun Don Song , Hyun Kyong Cho
发明人： Sung Min Hwang , Hyun Don Song , Hyun Kyong Cho
IPC分类号： H01L33/00
CPC分类号： H01L33/60 , H01L33/0033 , H01L33/145 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/48 , H01L33/62 , H01L2224/48091 , H01L2924/12032 , H01L2933/0016 , H01L2924/00014 , H01L2924/00
摘要： A light emitting device including a second conductive type semiconductor layer; an active layer over the second conductive type semiconductor layer; a first conductive type semiconductor layer over the active layer; a second electrode in a first region under the second conductive type semiconductor layer; a current blocking layer including a metal; and a first electrode over the first conductive type semiconductor layer. Further, the first electrode has at least one portion that vertically overlaps the current blocking layer.
摘要翻译：一种发光器件，包括第二导电类型半导体层; 在所述第二导电类型半导体层上方的有源层; 在有源层上的第一导电类型半导体层; 在第二导电类型半导体层下面的第一区域中的第二电极; 包括金属的电流阻挡层; 以及位于第一导电类型半导体层上的第一电极。此外，第一电极具有与电流阻挡层垂直重叠的至少一个部分。

39. 发明申请

US20120146069A1 Oxide Based LED BEOL Integration 审中-公开
标题翻译：基于氧化物的LED BEOL集成
公开(公告)号：US20120146069A1
公开(公告)日：2012-06-14
申请号：US12967328
申请日：2010-12-14
申请人： James S. Nakos
发明人： James S. Nakos
IPC分类号： H01L33/60 , H01L33/36
CPC分类号： H01L33/38 , H01L33/0033 , H01L33/08 , H01L33/20 , H01L33/24 , H01L2933/0016 , H05B33/26
摘要： A light emitting diode (LED) structure and method for making a light emitting diode are disclosed. The structure comprises deep trench metal electrodes between which electroluminescent material is disposed on the sidewalls of the electrodes, forming a series of luminescent diode elements stacked horizontally on a substrate.The method for fabricating the light emitting diode structure can be used for a wide variety of electroluminescent materials.
摘要翻译：公开了一种用于制造发光二极管的发光二极管（LED）结构和方法。该结构包括深沟槽金属电极，其间电致发光材料设置在电极的侧壁上，形成在基板上水平堆叠的一系列发光二极管元件。用于制造发光二极管结构的方法可用于各种电致发光材料。

40. 发明授权

US07834363B2 Light-emitting element having PNPN-structure and light-emitting element array 有权
标题翻译：具有PNPN结构和发光元件阵列的发光元件
公开(公告)号：US07834363B2
公开(公告)日：2010-11-16
申请号：US12394850
申请日：2009-02-27
申请人： Seiji Ohno
发明人： Seiji Ohno
IPC分类号： H01L27/15
CPC分类号： B41J2/45 , H01L27/15 , H01L33/0033
摘要： A light-emitting element including a light-emitting thyristor and a Schottky barrier diode is provided. A Schottky barrier diode is formed by contacting a metal terminal to a gate layer of a three-terminal light-emitting thyristor consisting of a PNPN-structure. A self-scanning light-emitting element array may be driven at 3.0V by using such a Schottky barrier diode as a coupling diode of a diode-coupled self-scanning light-emitting element array.
摘要翻译：提供了包括发光晶闸管和肖特基势垒二极管的发光元件。通过使金属端子与由PNPN结构构成的三端子发光晶闸管的栅极层接触来形成肖特基势垒二极管。通过使用这样的肖特基势垒二极管作为二极管耦合的自扫描发光元件阵列的耦合二极管，可以在3.0V下驱动自扫描发光元件阵列。

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