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    • 33. 发明授权
    • Plasma treatment apparatus and method for plasma treatment
    • 等离子体处理装置及等离子体处理方法
    • US07462572B2
    • 2008-12-09
    • US11950818
    • 2007-12-05
    • Shunpei YamazakiYasuyuki AraiYasuko Watanabe
    • Shunpei YamazakiYasuyuki AraiYasuko Watanabe
    • H01L21/26
    • H01L21/67115C23C16/45519C23C16/45521C23C16/4557C23C16/4583C23C16/46C23C16/5093C23C16/513C23C16/54H01J37/32761H01L21/67069H01L21/67109H01L21/67748H01L21/67784H01L21/6838
    • A plasma treatment apparatus and a method for plasma treatment are provided that made possible to control accurately a distance between plasma and an object to be treated (hereinafter referred to as an object), and that facilitated a transportation of a substrate that a width is thin and grown in size. The plasma treatment apparatus of the present invention is provided with a gas supply means for introducing a processing gas into a place between a first electrode and a second electrode under an atmospheric pressure or around atmospheric pressure; a plasma generation means for generating plasma by applying a high frequency voltage to the first electrode or the second electrode under the condition that the processing gas is introduced; and, a transport means for transporting the object by floating the object by blowing the processing gas or a transporting gas to the object. An etching treatment; an ashing treatment; a thin film formation; or a cleaning treatment of components using the first electrode and the second electrode is carried out by moving a relative position between the first electrode and the second electrode, and the object.
    • 提供了等离子体处理装置和等离子体处理方法,其可以准确地控制等离子体和被处理物体之间的距离(以下称为对象),并且促进宽度较薄的基板的输送 并长大。 本发明的等离子体处理装置设置有用于在大气压或大气压下将处理气体引入第一电极和第二电极之间的位置的气体供给装置; 等离子体产生装置,用于在引入处理气体的条件下,通过向第一电极或第二电极施加高频电压来产生等离子体; 以及用于通过将处理气体或输送气体吹送到物体而使物体浮起来来运送物体的运送装置。 蚀刻处理; 灰化治疗; 薄膜形成; 或者通过移动第一电极和第二电极之间的相对位置以及物体来执行使用第一电极和第二电极的部件的清洁处理。
    • 35. 发明申请
    • Non-contact support platforms for distance adjustment
    • 用于距离调整的非接触式支撑平台
    • US20070195653A1
    • 2007-08-23
    • US11578162
    • 2005-04-13
    • Yuval YassourArie HarnikHilel Richman
    • Yuval YassourArie HarnikHilel Richman
    • G11B11/00
    • B65G49/065B24B37/30B65G2249/02B65G2249/04B65G2249/045F16C29/025H01L21/67784H01L21/6838H01L21/68714
    • An apparatus for supporting a stationary or moving substantially flat object without physical contact on an fluid-cushion. The object floats on a fluid cushion gap, the apparatus aimed for globally or locally adjusting the gap. The apparatus comprising: a first platform for supporting the object without contact, the platform having a substantially flat active surface comprised of one or more sectors, each sector comprising at least one of a plurality of basic cells, each basic cell having at least one of a plurality of pressure outlets fluidically connected through a pressure flow restrictors to a higher-pressure manifold associated with the sector in which the basic cell lies, the higher-pressure manifold is fluidically connected through main supply pipeline to pressurized fluid supply and at least one of a plurality of fluid-evacuation channels fluidically connected to a lower-pressure manifold associated with the sector in which the basic cell lies having main evacuation pipeline; wherein the flow restrictor characteristically exhibiting fluidic return spring behavior; and wherein at least one pressure control valve is interposed with at least one of the two main pipelines of at least one sector for controlling pressure levels of at least one of the two manifolds of that sector.
    • 一种用于支撑静止或移动的基本平坦的物体而不在液垫上物理接触的装置。 物体漂浮在液体缓冲间隙上,该装置旨在全局或局部调整间隙。 该装置包括:用于在不接触的情况下支撑物体的第一平台,所述平台具有由一个或多个扇区组成的基本上平坦的有源表面,每个扇区包括多个基本单元中的至少一个,每个基本单元具有至少一个 多个压力出口,其通过压力限流器流体连接到与基本单元所在的扇区相关联的高压歧管,高压歧管通过主供应管线流体连接到加压流体供应器,并且至少一个 流体连接到与基本单元所在的具有主排空管线的扇区相关联的低压歧管的多个流体排出通道; 其中所述限流器特征性地表现出流体回流弹簧的性能; 并且其中至少一个压力控制阀插入有至少一个扇区的两个主管线中的至少一个,用于控制该扇区的两个歧管中的至少一个歧管的压力水平。
    • 38. 发明申请
    • Plasma treatment apparatus and method for plasma treatment
    • 等离子体处理装置及等离子体处理方法
    • US20060189170A1
    • 2006-08-24
    • US11410234
    • 2006-04-25
    • Shunpei YamazakiYasuyuki AraiYasuko Watanabe
    • Shunpei YamazakiYasuyuki AraiYasuko Watanabe
    • H01L21/324
    • H01L21/67115C23C16/45519C23C16/45521C23C16/4557C23C16/4583C23C16/46C23C16/5093C23C16/513C23C16/54H01J37/32761H01L21/67069H01L21/67109H01L21/67748H01L21/67784H01L21/6838
    • A plasma treatment apparatus and a method for plasma treatment are provided that made possible to control accurately a distance between plasma and an object to be treated (hereinafter referred to as an object), and that facilitated a transportation of a substrate that a width is thin and grown in size. The plasma treatment apparatus of the present invention is provided with a gas supply means for introducing a processing gas into a place between a first electrode and a second electrode under an atmospheric pressure or around atmospheric pressure; a plasma generation means for generating plasma by applying a high frequency voltage to the first electrode or the second electrode under the condition that the processing gas is introduced; and, a transport means for transporting the object by floating the object by blowing the processing gas or a transporting gas to the object. An etching treatment; an ashing treatment; a thin film formation; or a cleaning treatment of components using the first electrode and the second electrode is carried out by moving a relative position between the first electrode and the second electrode, and the object.
    • 提供了等离子体处理装置和等离子体处理方法,其可以准确地控制等离子体和被处理物体之间的距离(以下称为对象),并且促进宽度较薄的基板的输送 并长大。 本发明的等离子体处理装置设置有用于在大气压或大气压下将处理气体引入第一电极和第二电极之间的位置的气体供给装置; 等离子体产生装置,用于在引入处理气体的条件下,通过向第一电极或第二电极施加高频电压来产生等离子体; 以及用于通过将处理气体或输送气体吹送到物体而使物体浮起来来运送物体的运送装置。 蚀刻处理; 灰化治疗; 薄膜形成; 或者通过移动第一电极和第二电极之间的相对位置以及物体来执行使用第一电极和第二电极的部件的清洁处理。
    • 39. 发明申请
    • Substrate handling system and process for manufacturing large substrates
    • 基板处理系统和制造大型基板的工艺
    • US20060045667A1
    • 2006-03-02
    • US11180970
    • 2005-07-13
    • Stephen Savas
    • Stephen Savas
    • H01L21/677
    • H01L21/67173H01L21/67236H01L21/67784
    • Air floatation system and method for simultaneously moving very large substrates into and out of a load locked chamber for vacuum processing. While the substrates are being processed, input and output load locks are cycling to atmospheric pressure and back to vacuum for loading and unloading the substrates. Following loading or unloading, valves between all chambers are opened and the substrates are moved in vacuum, nearly simultaneously and in line from load lock to process chambers and from the process chambers to output load lock. This minimizes both the total process time per substrate and the cost and size of the handling system. It permits the use of valves of minimum size and cost, minimizes the cost of the handling mechanism, prevents the handling time from adding to total process time, and the loading and unloading system is flexible for both in-line and side-loading configurations.
    • 用于同时将非常大的衬底移入和移出负载锁定室以进行真空处理的空气漂浮系统和方法。 在正在处理衬底的同时,输入和输出负载锁定正在循环到大气压力并返回真空以装载和卸载衬底。 加载或卸载后,打开所有腔室之间的阀门,并且基板在真空中几乎同时移动,并从装载锁定到处理室以及从处理室输出到输出负载锁定。 这使得每个基底的总处理时间和处理系统的成本和尺寸最小化。 它允许使用最小尺寸和成本的阀门,最小化处理机构的成本,防止处理时间增加到总处理时间,并且装载和卸载系统对于在线和侧向加载配置都是灵活的。