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31. 发明申请

US20160230279A1 ISOTHERMAL WARM WALL CVD REACTOR 审中-公开
标题翻译：同温度瓦斯CVD反应堆
公开(公告)号：US20160230279A1
公开(公告)日：2016-08-11
申请号：US14619338
申请日：2015-02-11
申请人： United Technologies Corporation
发明人： Kirk C. Newton
IPC分类号： C23C16/46 , C23C16/32 , C23C16/44 , C23C16/40 , C23C16/06 , C23C16/26 , C23C16/34
CPC分类号： C23C16/46 , C23C16/045 , C23C16/06 , C23C16/26 , C23C16/32 , C23C16/325 , C23C16/342 , C23C16/345 , C23C16/403 , C23C16/4401 , C23C16/4412
摘要： A chemical vapor deposition (CVD) reactor includes a double wall vacuum processing chamber with an inner wall and an outer wall and fluid passages between the walls. A layer of thermal insulation covers the outer wall. A layer of high temperature thermal insulation covers the inner wall. Heating elements are positioned in the interior of the processing chamber to heat a substrate mounted in the chamber. A gas inlet structure is positioned through the inner and outer walls of the chamber and oriented to direct a flow of reactant gas against the substrate to form a CVD coating on the substrate. A gas outlet structure connected to a vacuum and effluent management system is positioned through the inner and outer walls of the chamber. Fluid inlet and outlet structures positioned to circulate heated thermal transfer fluid through the passages between the inner and outer walls maintain a controlled isothermal inner wall temperature above a condensation temperature of reactant gas and effluent reacted gas byproducts from condensing on the inner walls and insulation in the chamber.
摘要翻译：化学气相沉积（CVD）反应器包括双壁真空处理室，其具有内壁和外壁以及壁之间的流体通道。一层隔热层覆盖外墙。一层高温绝热覆盖内壁。加热元件位于处理室的内部以加热安装在腔室中的基底。气体入口结构通过室的内壁和外壁定位，并被定向成将反应气体流引向衬底以在衬底上形成CVD涂层。连接到真空和流出物管理系统的气体出口结构通过腔室的内壁和外壁定位。定位成使加热的热传递流体通过内壁和外壁之间的通道循环的流体入口和出口结构保持高于反应物气体的冷凝温度和流出物反应的气体副产物在内壁上凝结的受控等温内壁温度，并且在房间。

32. 发明授权

US09362109B2 Deposition of boron and carbon containing materials 有权
标题翻译：沉积含硼和碳的材料
公开(公告)号：US09362109B2
公开(公告)日：2016-06-07
申请号：US14515395
申请日：2014-10-15
申请人： ASM IP HOLDING B.V.
发明人： Viljami Pore
IPC分类号： H01L21/02 , C23C16/30 , C23C16/04 , C23C16/32 , C23C16/455 , H01L21/311
CPC分类号： H01L21/0217 , C23C16/045 , C23C16/30 , C23C16/32 , C23C16/45523 , C23C16/45525 , H01L21/02112 , H01L21/02211 , H01L21/02271 , H01L21/0228 , H01L21/0234 , H01L21/31111
摘要： Methods of depositing boron and carbon containing films are provided. In some embodiments, methods of depositing B,C films with desirable properties, such as conformality and etch rate, are provided. One or more boron and/or carbon containing precursors can be decomposed on a substrate at a temperature of less than about 400° C. In some embodiments methods of depositing silicon nitride films comprising B and C are provided. A silicon nitride film can be deposited by a deposition process including an ALD cycle that forms SiN and a CVD cycle that contributes B and C to the growing film.
摘要翻译：提供了沉积硼和碳的膜的方法。在一些实施例中，提供了沉积具有所需性质（诸如保形性和蚀刻速率）的B，C膜的方法。一种或多种含硼和/或碳的前体可以在小于约400℃的温度下在基材上分解。在一些实施方案中，提供了沉积包含B和C的氮化硅膜的方法。可以通过包括形成SiN的ALD循环和对生长膜贡献B和C的CVD循环的沉积工艺来沉积氮化硅膜。

33. 发明授权

US09322113B2 Tantalum carbide-coated carbon material and manufacturing method for same 有权
标题翻译：碳化钨涂层碳材料及其制造方法
公开(公告)号：US09322113B2
公开(公告)日：2016-04-26
申请号：US13519695
申请日：2010-12-28
申请人： Mika Kondo
发明人： Mika Kondo
IPC分类号： B32B9/00 , C30B29/36 , C04B41/00 , C04B41/50 , C04B41/87 , C23C16/14 , C23C16/32 , C23C16/56 , C30B25/02 , C04B111/00
CPC分类号： C30B29/36 , C04B41/009 , C04B41/5057 , C04B41/87 , C04B2111/0025 , C04B2111/00405 , C23C8/20 , C23C16/14 , C23C16/32 , C23C16/56 , C30B25/02 , Y10T428/30 , C04B35/522 , C04B41/4531
摘要： On the surface of a carbon substrate 41, a tantalum carbide coating film 42 is formed to coat the carbon substrate 41. The tantalum carbide coating film 42 has a maximum peak value of at least 80 degrees in an orientation angle of a (311) plane corresponding to a diffraction peak of tantalum carbide as determined by X-ray diffraction.
摘要翻译：在碳基板41的表面上，形成碳化钽涂层42以涂覆碳基板41.碳化钽涂层42在（311）面的取向角中具有至少80度的最大峰值对应于通过X射线衍射确定的碳化钽的衍射峰。

34. 发明授权

US09273391B2 ALD of zirconium-containing films using cyclopentadienyl compounds 有权
标题翻译：使用环戊二烯基化合物的含锆膜的ALD
公开(公告)号：US09273391B2
公开(公告)日：2016-03-01
申请号：US14311154
申请日：2014-06-20
申请人： ASM IP HOLDING B.V.
发明人： Sean T. Barry , Yamile A. M. Wasslen , Antti H. Rahtu
IPC分类号： C23C16/18 , C23C16/32 , C23C16/34 , C23C16/455 , C23C16/513
CPC分类号： C23C16/45553 , C23C16/18 , C23C16/32 , C23C16/34 , C23C16/45525 , C23C16/45527 , C23C16/45536 , C23C16/513
摘要： Atomic layer deposition (ALD) type processes for producing metal containing thin films comprise feeding into a reaction space vapor phase pulses of metal containing cyclopentadienyl precursors as a metal source material, wherein the metal is zirconium. In preferred embodiments the metal containing cyclopentadienyl reactant comprises a metal atom that is not directly bonded to an oxygen or halide atom. In other embodiments the metal atom is bonded to a cyclopentadienyl compound and separately bonded to at least one ligand via a nitrogen atom. In still other embodiments the metal containing cyclopentadienyl compound comprises a nitrogen-bridged ligand.
摘要翻译：用于制备含金属薄膜的原子层沉积（ALD）型方法包括将含有环戊二烯基前体的金属脉冲作为金属源材料进料到反应空间气相中，其中金属是锆。在优选的实施方案中，含金属环戊二烯基反应物的金属原子不直接键合到氧或卤素原子上。在其它实施方案中，金属原子键合到环戊二烯基化合物上，并通过氮原子分别与至少一个配体结合。在其它实施方案中，含有环戊二烯基化合物的金属包含氮桥连配体。

35. 发明申请

US20150252470A1 METHOD FOR OPERATING SEMICONDUCTOR MANUFACTURING EQUIPMENT 有权
标题翻译：操作半导体制造设备的方法
公开(公告)号：US20150252470A1
公开(公告)日：2015-09-10
申请号：US14600132
申请日：2015-01-20
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： BYOUNG-HOON LEE , JUNE-HEE LEE , GEUN-WOO KIM , MIN-WOO SONG , SEOK-JUN WON
IPC分类号： C23C16/44 , C23C16/32 , C23C16/34 , H01L21/285
CPC分类号： C23C16/4404 , C23C16/32 , C23C16/34 , G01B2210/56 , H01L21/67005
摘要： A method for operating semiconductor manufacturing equipment is provided. The method includes forming a conductive thin film on an inner side surface of a reaction chamber and on a substrate in the reaction chamber, the conductive thin film including a first conductive material, and forming a particle preventive layer on the inner side surface of the reaction chamber in which the conductive thin film is formed.
摘要翻译：提供了一种用于操作半导体制造设备的方法。该方法包括在反应室的内侧表面和反应室中的基板上形成导电薄膜，所述导电薄膜包括第一导电材料，并且在反应的内侧表面上形成防颗粒层其中形成导电薄膜。

36. 发明申请

US20150104954A1 DEPOSITION OF BORON AND CARBON CONTAINING MATERIALS 有权
标题翻译：含硼和含碳材料的沉积
公开(公告)号：US20150104954A1
公开(公告)日：2015-04-16
申请号：US14515341
申请日：2014-10-15
申请人： ASM IP HOLDING B.V.
发明人： Viljami Pore
IPC分类号： H01L21/02
CPC分类号： H01L21/0217 , C23C16/045 , C23C16/30 , C23C16/32 , C23C16/45523 , C23C16/45525 , H01L21/02112 , H01L21/02211 , H01L21/02271 , H01L21/0228 , H01L21/0234 , H01L21/31111
摘要： Methods of depositing boron and carbon containing films are provided. In some embodiments, methods of depositing B,C films with desirable properties, such as conformality and etch rate, are provided. One or more boron and/or carbon containing precursors can be decomposed on a substrate at a temperature of less than about 400° C. In some embodiments methods of depositing silicon nitride films comprising B and C are provided. A silicon nitride film can be deposited by a deposition process including an ALD cycle that forms SiN and a CVD cycle that contributes B and C to the growing film.
摘要翻译：提供了沉积硼和碳的膜的方法。在一些实施例中，提供了沉积具有所需性质（诸如保形性和蚀刻速率）的B，C膜的方法。一种或多种含硼和/或碳的前体可以在小于约400℃的温度下在基材上分解。在一些实施方案中，提供了沉积包含B和C的氮化硅膜的方法。可以通过包括形成SiN的ALD循环和对生长膜贡献B和C的CVD循环的沉积工艺来沉积氮化硅膜。

37. 发明申请

US20150044510A1 METHOD AND MATERIAL FOR PROTECTING MAGNETIC INFORMATION STORAGE MEDIA 有权
标题翻译：用于保护磁信息存储介质的方法和材料
公开(公告)号：US20150044510A1
公开(公告)日：2015-02-12
申请号：US14486397
申请日：2014-09-15
申请人： The Trustees of the University of Pennsylvania
发明人： Robert W. Carpick , Kumar Sridharan
IPC分类号： G11B5/72 , C23C14/48 , C23C14/06 , C23C14/32 , C23C16/448 , C23C16/32 , C23C14/34 , G11B5/84 , C23C16/50
CPC分类号： G11B5/722 , C23C14/0635 , C23C14/325 , C23C14/34 , C23C14/48 , C23C16/30 , C23C16/32 , C23C16/448 , C23C16/50 , G11B5/8408
摘要： A method of protecting a magnetic information storage medium is described. The method includes fabricating a film over a surface of the magnetic information storage medium. The film includes an amorphous, uniform, homogeneous solid solution of carbon, hydrogen, silicon, and oxygen. A magnetic storage medium with such a protective film is described.
摘要翻译：描述了一种保护磁信息存储介质的方法。该方法包括在磁信息存储介质的表面上制造薄膜。该膜包括碳，氢，硅和氧的无定形均匀的均匀固溶体。描述了具有这种保护膜的磁存储介质。

38. 发明申请

US20140363574A1 RAPID CERAMIC MATRIX COMPOSITE PRODUCTION METHOD 有权
标题翻译：快速陶瓷基复合材料生产方法
公开(公告)号：US20140363574A1
公开(公告)日：2014-12-11
申请号：US14140661
申请日：2013-12-26
申请人： Rolls-Royce Corporation
发明人： Andrew J. Lazur , Adam L. Chamberlain
IPC分类号： C23C16/34 , C23C16/32
CPC分类号： C04B35/806 , C04B35/573 , C04B35/6286 , C04B35/62863 , C04B35/62868 , C04B35/62873 , C04B35/62884 , C04B35/62894 , C04B35/62897 , C04B2235/3826 , C04B2235/421 , C04B2235/422 , C04B2235/5244 , C04B2235/5248 , C04B2235/614 , C04B2235/616 , C23C16/045 , C23C16/32 , C23C16/325 , C23C16/342
摘要： Ceramic matrix composite materials and a process for making said composite materials are disclosed.
摘要翻译：公开了陶瓷基复合材料和制备所述复合材料的方法。

39. 发明申请

US20140274825A1 PECVD LUBRICITY VESSEL COATING, COATING PROCESS AND APPARATUS PROVIDING DIFFERENT POWER LEVELS IN TWO PHASES 有权
标题翻译： PECVD润滑油涂料，涂料工艺和在两相中提供不同功率水平的装置
公开(公告)号：US20140274825A1
公开(公告)日：2014-09-18
申请号：US14214030
申请日：2014-03-14
申请人： SIO2 MEDICAL PRODUCTS, INC.
发明人： Joseph A. Jones , John T. Felts , James Troy Gresham , Brian Russell Lilly , Thomas E. Fisk
IPC分类号： A61L31/08 , A61M5/28 , A61M5/31 , C23C16/32 , A61L31/14
CPC分类号： C23C16/45523 , A61L31/088 , A61L31/14 , A61M5/28 , A61M5/3129 , A61M5/3134 , A61M5/3202 , A61M2005/3104 , A61M2005/3131 , C23C16/32 , C23C16/401 , C23C16/50 , C23C16/505 , C23C16/511 , C23C16/515
摘要： A method for coating a substrate surface such as a syringe part by PECVD is provided, the method comprising generating a plasma from a gaseous reactant comprising an organosilicon precursor and optionally an oxidizing gas by providing plasma-forming energy adjacent to the substrate, thus forming a coating on the substrate surface by plasma enhanced chemical vapor deposition (PECVD). The plasma-forming energy is applied in a first phase as a first pulse at a first energy level followed by further treatment in a second phase at a second energy level lower than the first energy level. The lubricity, hydrophobicity and/or barrier properties of the coating are set by setting the ratio of the O2 to the organosilicon precursor in the gaseous reactant, and/or by setting the electric power used for generating the plasma.
摘要翻译：提供了一种通过PECVD涂覆诸如注射器部件的基底表面的方法，该方法包括通过在基底附近提供等离子体形成能量从包含有机硅前体和任选的氧化气体的气态反应器产生等离子体，由此形成通过等离子体增强化学气相沉积（PECVD）在衬底表面上涂覆。等离子体形成能量在第一相中作为第一脉冲施加在第一能级，随后在低于第一能级的第二能级在第二相进一步处理。通过设定气体反应物中的O 2与有机硅前体的比例和/或通过设定用于产生等离子体的电力来设定涂层的润滑性，疏水性和/或阻隔性。

40. 发明授权

US08771807B2 Organoaminosilane precursors and methods for making and using same 有权
标题翻译：有机氨基硅烷前体及其制备和使用方法
公开(公告)号：US08771807B2
公开(公告)日：2014-07-08
申请号：US13474076
申请日：2012-05-17
申请人： Manchao Xiao , Xinjian Lei , Bing Han , Mark Leonard O'Neill , Ronald Martin Pearlstein , Richard Ho , Haripin Chandra , Agnes Derecskei-Kovacs
发明人： Manchao Xiao , Xinjian Lei , Bing Han , Mark Leonard O'Neill , Ronald Martin Pearlstein , Richard Ho , Haripin Chandra , Agnes Derecskei-Kovacs
IPC分类号： C07F7/02
CPC分类号： C23C16/24 , C07F7/025 , C07F7/10 , C23C16/308 , C23C16/32 , C23C16/345 , C23C16/347 , C23C16/401 , C23C16/402 , C23C16/45553 , H01L21/02126 , H01L21/02164 , H01L21/02219 , H01L21/0228
摘要： Described herein are organoaminosilane precursors which can be used to deposit silicon containing films which contain silicon and methods for making these precursors. Also disclosed herein are deposition methods for making silicon-containing films or silicon containing films using the organoaminosilane precursors described herein. Also disclosed herein are the vessels that comprise the organoaminosilane precursors or a composition thereof that can be used, for example, to deliver the precursor to a reactor in order to deposit a silicon-containing film.
摘要翻译：本文描述了可用于沉积含有硅的含硅膜的有机氨基硅烷前体和用于制备这些前体的方法。本文还公开了使用本文所述的有机氨基硅烷前体制备含硅膜或含硅膜的沉积方法。还公开了包含有机氨基硅烷前体或其组合物的容器，其可以用于例如将前体输送到反应器以沉积含硅膜。

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