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1. 发明申请

US20180141870A1 CERAMIC COMPOSITE ARTICLE AND METHOD THEREFOR 审中-公开
公开(公告)号：US20180141870A1
公开(公告)日：2018-05-24
申请号：US15873789
申请日：2018-01-17
申请人： United Technologies Corporation
发明人： Michael A. Kmetz , Kirk C. Newton
IPC分类号： C04B35/628 , C04B35/80 , C04B35/111 , C04B35/18 , C04B35/597 , C04B35/565
CPC分类号： C04B35/62844 , C04B35/111 , C04B35/18 , C04B35/565 , C04B35/597 , C04B35/62847 , C04B35/62884 , C04B35/62894 , C04B35/62897 , C04B35/803 , C04B35/806 , C04B2235/3217 , C04B2235/3284 , C04B2235/3418 , C04B2235/3826 , C04B2235/449 , C04B2235/5224 , C04B2235/5244 , C04B2235/5256 , Y10T428/249928 , Y10T428/2918 , Y10T428/2938
摘要： A ceramic composite article includes ceramic reinforcement fibers each having an outer surface and a continuous zinc oxide coating disposed on the ceramic reinforcement fibers and in contact with the outer surfaces.

2. 发明申请

US20160229758A1 CONTINUOUS CHEMICAL VAPOR DEPOSITION/INFILTRATION COATER 审中-公开
标题翻译：连续化学蒸气沉积/渗透涂料
公开(公告)号：US20160229758A1
公开(公告)日：2016-08-11
申请号：US14619320
申请日：2015-02-11
申请人： United Technologies Corporation
发明人： Michael A. Kmetz , Kirk C. Newton
IPC分类号： C04B41/00
CPC分类号： C04B41/0018 , C04B35/62844 , C04B35/62863 , C04B35/62868 , C04B35/62871 , C04B35/62873 , C04B35/62884 , C04B35/62886 , C23C16/045 , C23C16/545
摘要： A method to form a ceramic interface coating on ceramic matrix composite (CMC) precursor tape by a continuous process includes passing a ceramic fiber woven cloth tape or unidirectional tape of a first ceramic with a first and second surface through at least one reaction zone of a continuous vacuum chemical vapor deposition (CVD) or chemical vapor infiltration (CVI) reactor heated to a reaction temperature. The method further includes directing a flow of CVD or CVI reactant gas of a second ceramic at the first surface of the tape in a direction perpendicular to the tape such that the reactant gas passes through the tape in a forced flow process depositing the second ceramic on the fibers of the first ceramic thereby coating the fibers of the first ceramic tape with the second ceramic to interface coating form a coated fiber CMC precursor tape product.
摘要翻译：通过连续方法在陶瓷基复合材料（CMC）前体胶带上形成陶瓷界面涂层的方法包括使第一和第二表面的陶瓷纤维编织布带或第一陶瓷的单向带通过至少一个反应区连续真空化学气相沉积（CVD）或化学气相渗透（CVI）反应器加热至反应温度。该方法还包括在垂直于带的方向上引导第二陶瓷的CVD或CVI反应气流在带的第一表面，使得反应气体以强制流动过程的方式穿过带，将第二陶瓷沉积在因此第一陶瓷的纤维从而用第二陶瓷涂覆第一陶瓷带的纤维以形成涂覆的纤维CMC前体胶带产品。

3. 发明申请

US20140178244A1 GASEOUS BASED DESULFURIZATION OF ALLOYS 有权
标题翻译：基于气体的合金脱硫
公开(公告)号：US20140178244A1
公开(公告)日：2014-06-26
申请号：US13723081
申请日：2012-12-20
申请人： UNITED TECHNOLOGIES CORPORATION
发明人： Mario P. Bochiechio , John Joseph Marcin , Kirk C. Newton , Michael A. Kmetz
IPC分类号： C22B9/05
CPC分类号： C22B9/05 , B22D1/002
摘要： A method for desulfurizing a metal alloy comprises heating the metal alloy to a molten state. A gaseous desulfurizing compound is bubbled through the molten alloy to form a solid sulfur-containing waste phase and a molten reduced-sulfur alloy phase. The solid waste phase and the molten reduced-sulfur alloy phase are separated. The gaseous desulfurizing compound includes a constituent element selected from the group: alkali metals, alkaline earth metals, and rare earth metals.
摘要翻译：金属合金的脱硫方法包括将金属合金加热至熔融状态。气态脱硫化合物通过熔融合金鼓泡形成固体含硫废物相和熔融还原硫合金相。固相废物相和熔融的还原硫合金相分离。气态脱硫化合物包括选自碱金属，碱土金属和稀土金属的组成元素。

4. 发明授权

US10100409B2 Isothermal warm wall CVD reactor 有权
公开(公告)号：US10100409B2
公开(公告)日：2018-10-16
申请号：US14619338
申请日：2015-02-11
申请人： United Technologies Corporation
发明人： Kirk C. Newton
IPC分类号： C23C16/44 , C23C16/46 , C23C16/04 , C23C16/34 , C23C16/26 , C23C16/32 , C23C16/40 , C23C16/06
摘要： A chemical vapor deposition (CVD) reactor includes a double wall vacuum processing chamber with an inner wall and an outer wall and fluid passages between the walls. A layer of thermal insulation covers the outer wall. A layer of high temperature thermal insulation covers the inner wall. Heating elements are positioned in the interior of the processing chamber to heat a substrate mounted in the chamber. A gas inlet structure is positioned through the inner and outer walls of the chamber and oriented to direct a flow of reactant gas against the substrate to form a CVD coating on the substrate. A gas outlet structure connected to a vacuum and effluent management system is positioned through the inner and outer walls of the chamber. Fluid inlet and outlet structures positioned to circulate heated thermal transfer fluid through the passages between the inner and outer walls maintain a controlled isothermal inner wall temperature above a condensation temperature of reactant gas and effluent reacted gas byproducts from condensing on the inner walls and insulation in the chamber.

5. 发明授权

US09481917B2 Gaseous based desulfurization of alloys 有权
标题翻译：合金的气态脱硫
公开(公告)号：US09481917B2
公开(公告)日：2016-11-01
申请号：US13723081
申请日：2012-12-20
申请人： United Technologies Corporation
发明人： Mario P. Bochiechio , John Joseph Marcin , Kirk C. Newton , Michael A. Kmetz
IPC分类号： C22B9/05 , B22D1/00
CPC分类号： C22B9/05 , B22D1/002
摘要： A method for desulfurizing a metal alloy comprises heating the metal alloy to a molten state. A gaseous desulfurizing compound is bubbled through the molten alloy to form a solid sulfur-containing waste phase and a molten reduced-sulfur alloy phase. The solid waste phase and the molten reduced-sulfur alloy phase are separated. The gaseous desulfurizing compound includes a constituent element selected from the group: alkali metals, alkaline earth metals, and rare earth metals.
摘要翻译：金属合金的脱硫方法包括将金属合金加热至熔融状态。气态脱硫化合物通过熔融合金鼓泡形成固体含硫废物相和熔融还原硫合金相。固相废物相和熔融的还原硫合金相分离。气态脱硫化合物包括选自碱金属，碱土金属和稀土金属的组成元素。

6. 发明申请

US20160230279A1 ISOTHERMAL WARM WALL CVD REACTOR 审中-公开
标题翻译：同温度瓦斯CVD反应堆
公开(公告)号：US20160230279A1
公开(公告)日：2016-08-11
申请号：US14619338
申请日：2015-02-11
申请人： United Technologies Corporation
发明人： Kirk C. Newton
IPC分类号： C23C16/46 , C23C16/32 , C23C16/44 , C23C16/40 , C23C16/06 , C23C16/26 , C23C16/34
CPC分类号： C23C16/46 , C23C16/045 , C23C16/06 , C23C16/26 , C23C16/32 , C23C16/325 , C23C16/342 , C23C16/345 , C23C16/403 , C23C16/4401 , C23C16/4412
摘要： A chemical vapor deposition (CVD) reactor includes a double wall vacuum processing chamber with an inner wall and an outer wall and fluid passages between the walls. A layer of thermal insulation covers the outer wall. A layer of high temperature thermal insulation covers the inner wall. Heating elements are positioned in the interior of the processing chamber to heat a substrate mounted in the chamber. A gas inlet structure is positioned through the inner and outer walls of the chamber and oriented to direct a flow of reactant gas against the substrate to form a CVD coating on the substrate. A gas outlet structure connected to a vacuum and effluent management system is positioned through the inner and outer walls of the chamber. Fluid inlet and outlet structures positioned to circulate heated thermal transfer fluid through the passages between the inner and outer walls maintain a controlled isothermal inner wall temperature above a condensation temperature of reactant gas and effluent reacted gas byproducts from condensing on the inner walls and insulation in the chamber.
摘要翻译：化学气相沉积（CVD）反应器包括双壁真空处理室，其具有内壁和外壁以及壁之间的流体通道。一层隔热层覆盖外墙。一层高温绝热覆盖内壁。加热元件位于处理室的内部以加热安装在腔室中的基底。气体入口结构通过室的内壁和外壁定位，并被定向成将反应气体流引向衬底以在衬底上形成CVD涂层。连接到真空和流出物管理系统的气体出口结构通过腔室的内壁和外壁定位。定位成使加热的热传递流体通过内壁和外壁之间的通道循环的流体入口和出口结构保持高于反应物气体的冷凝温度和流出物反应的气体副产物在内壁上凝结的受控等温内壁温度，并且在房间。

7. 发明申请

US20130323417A1 HYBRED POLYMER CVI COMPOSITES 审中-公开
标题翻译：混合聚合物CVI复合材料
公开(公告)号：US20130323417A1
公开(公告)日：2013-12-05
申请号：US13850367
申请日：2013-03-26
申请人： United Technologies Corporation
发明人： Michael A. Kmetz , Kirk C. Newton
IPC分类号： C04B35/622
CPC分类号： C04B35/622 , C04B35/565 , C04B35/571 , C04B35/584 , C04B35/589 , C04B35/62868 , C04B35/62871 , C04B35/62894 , C04B35/806 , C04B2235/3826 , C04B2235/3878 , C04B2235/5244 , C04B2235/608 , C04B2235/614 , C04B2235/616 , C04B2235/77 , C23C16/045
摘要： A method of forming a highly densified chemical matrix composite CMC from a preform of a matrix of a non-oxide ceramic and continuous ceramic fibers. An interface coating is added, followed by partially densifying the preform with a resin to increase the density of the preform using a polymer infiltration pyrolysis PIP) process one or more times. A chemical vapor infiltration (CVI) process is used to bring the CMC to a final desired density.
摘要翻译：从非氧化物陶瓷和连续陶瓷纤维的基体的预成型体形成高度致密的化学基质复合材料CMC的方法。加入界面涂层，然后用树脂部分致密化预成型体，以使用聚合物渗透热解PIP）方法增加预成型体的密度一次或多次。使用化学气相渗透（CVI）方法使CMC达到最终期望的密度。

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