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31. 发明申请

US20160040283A1 SURFACE-COATED CUTTING TOOL 有权
标题翻译：表面涂层切割工具
公开(公告)号：US20160040283A1
公开(公告)日：2016-02-11
申请号：US14777052
申请日：2014-03-18
申请人： MITSUBISHI MATERIALS CORPORATION
发明人： Tsuyoshi Ogami , Tatsuo Hashimoto
IPC分类号： C23C14/32 , B23C5/10 , C23C14/54 , C23C14/06 , C23C14/02
CPC分类号： C23C14/325 , B23C5/10 , B23C2222/28 , B23C2222/84 , B23C2228/10 , B23C2228/24 , C23C14/022 , C23C14/0617 , C23C14/0641 , C23C14/54 , C23C30/005
摘要： A surface-coated cutting tool of the present invention includes: a hard coating layer which is vapor-deposited on a surface of a tool body made of tungsten carbide-based cemented carbide and has an average thickness of 2 mm to 10 mm, in which (a) the hard coating layer comprises a layer made of complex nitride of Al, Cr, and B in which a ratio (atomic ratio) of the amount of Cr is 0.2 to 0.45 and a ratio (atomic ratio) of the amount of B is 0.01 to 0.1 to the total amount of Al, Cr, and B, and (b) in an area within 100 mm from an edge tip on a flank face of the surface-coated cutting tool, the hard coating layer has a granular crystal grain structure and the average grain size of granular crystal grains is 0.1 mm to 0.4 mm on the surface of the hard coating layer.
摘要翻译：本发明的表面涂层切削工具包括：在由碳化钨类硬质合金制成的工具主体的表面上气相沉积并具有2mm至10mm的平均厚度的硬涂层，其中（a）硬涂层包含由Cr，Cr和B的复合氮化物构成的层，Cr的比例（原子比）为0.2〜0.45，B的比例（原子比）相对于Al，Cr，B的总量为0.01〜0.1，（b）在表面覆盖切削工具的侧面上的边缘尖端100mm以内的区域，硬涂层具有粒状结晶晶粒结构和粒状晶粒的平均晶粒尺寸在硬涂层的表面上为0.1mm至0.4mm。

32. 发明申请

US20150376775A1 METHOD FOR CONTROLLING MAGNETRON SPUTTERING DEVICE, AND FILM FORMING METHOD 审中-公开
标题翻译：用于控制磁珠溅射装置的方法和薄膜形成方法
公开(公告)号：US20150376775A1
公开(公告)日：2015-12-31
申请号：US14848389
申请日：2015-09-09
申请人： Sharp Kabushiki Kaisha
发明人： Tokuo YOSHIDA
IPC分类号： C23C14/35 , C23C14/08
CPC分类号： C23C14/352 , C23C14/08 , C23C14/54 , H01J37/3408 , H01J37/3444 , H01J37/3464
摘要： A magnetron sputtering device includes alternating current power supplies each connected to a first target and a second target in a pair, and a controller configured to control a phase difference between voltages output from the alternating current power supplies connected to the first targets and the second targets in the pairs adjacent to each other.
摘要翻译：磁控溅射装置包括各自连接到第一靶和成对的第二靶的交流电源，以及控制器，被配置为控制从连接到第一靶和第二靶的交流电源输出的电压之间的相位差在彼此相邻的对中。

33. 发明申请

US20150371847A1 METHOD FOR CONTROLLING SEMICONDUCTOR DEPOSITION OPERATION 审中-公开
标题翻译：用于控制半导体沉积操作的方法
公开(公告)号：US20150371847A1
公开(公告)日：2015-12-24
申请号：US14311074
申请日：2014-06-20
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
发明人： CHUNG-LIANG CHENG , SHENG-WEI YEH , CHIA-HSI WANG , WEI-JEN CHEN , YEN-YU CHEN , CHANG-SHENG LEE , WEI ZHANG
IPC分类号： H01L21/02 , C23C14/34 , H01L21/285 , C23C14/06
CPC分类号： C23C14/34 , C23C14/0042 , C23C14/0641 , C23C14/54 , H01L21/2855
摘要： The present disclosure provides a method for controlling a semiconductor deposition operation. The method includes (i) identifying a first target lifetime in a physical vapor deposition (PVD) system; (ii) inputting the first target lifetime into a processor; (iii) outputting, by the processor, a plurality of first operation parameters according to a plurality of compensation curves; and (iv) performing the first operation parameters in the PVD system. The first operation parameters includes, but not limited to, an RF power tuning, a DC voltage tuning, a target to chamber pedestal spacing tuning, an AC bias tuning, an impedance tuning, a reactive gas flow tuning, an inert gas flow tuning, a chamber pedestal temperature tuning, or a combination thereof.
摘要翻译：本公开提供了一种用于控制半导体沉积操作的方法。该方法包括（i）识别物理气相沉积（PVD）系统中的第一目标寿命; （ii）将第一目标寿命输入处理器; （iii）由处理器根据多个补偿曲线输出多个第一操作参数; 和（iv）在PVD系统中执行第一操作参数。第一操作参数包括但不限于RF功率调谐，DC电压调谐，目标到室基座间距调谐，AC偏置调谐，阻抗调谐，反应气体流量调节，惰性气体流量调节，室底座温度调节或其组合。

34. 发明申请

US20150270134A1 METHODS OF FORMING A METAL-INSULATOR-SEMICONDUCTOR (MIS) STRUCTURE AND A DUAL CONTACT DEVICE 审中-公开
标题翻译：形成金属绝缘体半导体（MIS）结构和双接触器件的方法
公开(公告)号：US20150270134A1
公开(公告)日：2015-09-24
申请号：US14284958
申请日：2014-05-22
申请人： QUALCOMM Incorporated
发明人： Jeffrey Junhao Xu , Kern Rim , John Jianhong Zhu , Stanley Seungchul Song , Choh Fei Yeap
IPC分类号： H01L21/285 , H01L29/66 , C23C14/54 , C23C16/52 , C23C16/46 , C23C14/24 , H01L21/324 , H01L29/45
CPC分类号： H01L21/823814 , C23C14/24 , C23C14/54 , C23C16/46 , C23C16/52 , H01L21/285 , H01L21/28518 , H01L21/2855 , H01L21/28556 , H01L21/28568 , H01L21/324 , H01L21/823842 , H01L21/823857 , H01L21/823871 , H01L29/456 , H01L29/66477 , H01L29/66568
摘要： A method includes forming a first metal layer on source/drain regions of an n-type metal-oxide-semiconductor (NMOS) device and on source/drain regions of a p-type MOS (PMOS) device by chemical vapor deposition (CVD) or non-energetic physical vapor deposition (PVD). The method further includes selectively performing a rapid thermal anneal (RTA) process on the first metal layer after forming the first metal layer.
摘要翻译：一种方法包括通过化学气相沉积（CVD）在n型金属氧化物半导体（NMOS）器件的源极/漏极区域和p型MOS（PMOS）器件的源极/漏极区域上形成第一金属层，或非能量物理气相沉积（PVD）。该方法还包括在形成第一金属层之后在第一金属层上选择性地执行快速热退火（RTA）工艺。

35. 发明授权

US09127354B2 Filtered cathodic arc deposition apparatus and method 有权
标题翻译：过滤阴极电弧沉积设备及方法
公开(公告)号：US09127354B2
公开(公告)日：2015-09-08
申请号：US14362301
申请日：2012-11-30
申请人： Platit A.S.
发明人： Mojmir Jilek, Sr. , Mojmir Jilek, Jr. , Olivier Coddet
IPC分类号： C23C14/34 , C23C14/06 , C23C14/08 , C23C14/32 , C23C14/35 , C23C14/54 , C23C14/56 , H01J37/32 , H01J37/34
CPC分类号： C23C14/3414 , C23C14/0605 , C23C14/0641 , C23C14/08 , C23C14/325 , C23C14/35 , C23C14/54 , C23C14/564 , H01J37/32055 , H01J37/32422 , H01J37/3266 , H01J37/32871 , H01J37/3405 , H01J37/3426 , H01J37/3458
摘要： Vacuum deposition apparatus including cathodic arc source for application of coatings on the substrate. Cathodic arc source comprises focusing magnetic source for generating magnetic field, arc cathode containing film forming material and anode. The focusing magnetic source is placed between arc cathode and substrate. Arc spot generated on the cathode evaporation surface is kept by the magnetic field lines in the place where the magnetic field lines are perpendicular to the cathode surface.
摘要翻译：真空沉积设备包括用于在基底上施加涂层的阴极电弧源。阴极电弧源包括用于产生磁场的聚焦磁源，包含阴极的成膜材料和阳极。聚焦磁源放置在电弧阴极和基板之间。在阴极蒸发表面产生的电弧点在磁场线垂直于阴极表面的位置由磁场线保持。

36. 发明授权

US09121099B2 Vacuum processing apparatus and processing method using the same 有权
标题翻译：真空处理装置及其处理方法
公开(公告)号：US09121099B2
公开(公告)日：2015-09-01
申请号：US13325108
申请日：2011-12-14
申请人： Kazuhiro Kameyama
发明人： Kazuhiro Kameyama
IPC分类号： C23C16/52 , C23C14/56 , C23C14/54
CPC分类号： C23C14/568 , C23C14/54
摘要： A vacuum processing apparatus includes a process chamber; a transport unit for transporting a plurality of substrates; a gas supply unit; a substrate processing unit for processing the substrates placed on the transport unit; a detection unit for detecting a substrate interval between adjacent substrates out of the plurality of substrates; and a control unit for controlling, based on the substrate interval detected by the detection unit, a supply amount of the gas to be supplied by the gas supply unit.
摘要翻译：真空处理装置包括处理室; 用于输送多个基板的输送单元; 气体供应单元; 基板处理单元，用于处理放置在所述输送单元上的基板; 检测单元，用于检测所述多个基板中的相邻基板之间的基板间隔; 以及控制单元，用于基于由检测单元检测到的基板间隔，控制由气体供给单元供应的气体的供给量。

37. 发明申请

US20150176131A1 THIN FILM DEPOSITION APPARATUS 有权
标题翻译：薄膜沉积装置
公开(公告)号：US20150176131A1
公开(公告)日：2015-06-25
申请号：US14642360
申请日：2015-03-09
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Jong-Won Hong , Seok-Rak Chang , Chang-Mog JO , Young-Mook Choi , Jae-Kwang Ryu
IPC分类号： C23C16/52 , C23C16/04
CPC分类号： C23C16/52 , C23C14/042 , C23C14/243 , C23C14/54 , C23C14/568 , C23C16/042 , H01L51/5253 , H01L51/56
摘要： A thin film deposition apparatus includes: a deposition source that discharges a deposition material; a deposition source nozzle unit disposed at a side of the deposition source and including a plurality of deposition source nozzles arranged in a first direction; a patterning slit sheet disposed opposite to the deposition source nozzle unit and including a plurality of patterning slits arranged in the first direction; a position detection member that detects a relative position of the substrate to the patterning slit sheet; and an alignment control member that controls a relative position of the patterning slit sheet to the substrate by using the relative position of the substrate detected by the position detection member, wherein the thin film deposition apparatus and the substrate are separated from each other, and the thin film deposition apparatus and the substrate are moved relative to each other.
摘要翻译：薄膜沉积设备包括：放电沉积材料的沉积源; 沉积源喷嘴单元，设置在沉积源的一侧，并且包括沿第一方向布置的多个沉积源喷嘴; 图案化缝隙片，与所述沉积源喷嘴单元相对设置并且包括沿所述第一方向布置的多个图案化狭缝; 位置检测构件，其检测所述基板与所述图案化缝隙片的相对位置; 以及对准控制部件，其通过使用由所述位置检测部件检测出的所述基板的相对位置来控制所述图案化狭缝片材与所述基板的相对位置，其中所述薄膜沉积设备和所述基板彼此分离，薄膜沉积设备和基板相对于彼此移动。

38. 发明申请

US20150167157A1 SEMICONDUCTOR MANUFACTURING DEVICE AND SEMICONDUCTOR MANUFACTURING METHOD 有权
标题翻译：半导体制造设备和半导体制造方法
公开(公告)号：US20150167157A1
公开(公告)日：2015-06-18
申请号：US14482489
申请日：2014-09-10
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Katsunori Shibuya , Takashi Imoto , Soichi Homma , Takeshi Watanabe , Yuusuke Takano
IPC分类号： C23C14/50 , C23C14/54 , H01L21/66 , H01L21/67 , H01L21/48 , C23C14/34 , H01L23/552
CPC分类号： H01L21/67265 , C23C14/54 , C23C14/56 , H01L21/67259 , H01L21/67288 , H01L23/552 , H01L2924/0002 , H01L2924/14 , H01L2924/00
摘要： A semiconductor manufacturing device has an upper cover configured to be arranged above top surface of unshielded semiconductor device which are mounted on a tray placed on a carrier to go through electromagnetic shielding, and a displacement detector configured to detect an abnormality when the upper cover is raised by at least one of the semiconductor device which is brought into contact with a bottom surface of the upper cover.
摘要翻译：半导体制造装置具有上盖，其被配置为布置在非屏蔽半导体器件的上表面上方，该顶盖安装在放置在载体上的托盘上以穿过电磁屏蔽;以及位移检测器，其构造成当上盖升高时检测异常通过与上盖的底面接触的半导体器件中的至少一个。

39. 发明授权

US09006692B2 Apparatus and techniques for controlling ion implantation uniformity 有权
标题翻译：用于控制离子注入均匀性的装置和技术
公开(公告)号：US09006692B2
公开(公告)日：2015-04-14
申请号：US14037218
申请日：2013-09-25
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Stanislav S. Todorov , George M. Gammel , Richard Allen Sprenkle , Norman E. Hussey , Frank Sinclair , Shengwu Chang , Joseph C. Olson , David Roger Timberlake , Kurt T. Decker-Lucke
IPC分类号： G21K5/04 , C23C14/54 , G21K5/00
CPC分类号： C23C14/54 , C23C14/48 , G21K5/00 , H01J37/304 , H01J37/3171 , H01J2237/24535 , H01J2237/24542 , H01J2237/31703
摘要： A system to control an ion beam in an ion implanter includes a detector to perform a plurality of beam current measurements of the ion beam along a first direction perpendicular to a direction of propagation of the ion beam. The system also includes an analysis component to determine a beam current profile based upon the plurality of beam current measurements, the beam current profile comprising a variation of beam current along the first direction; and an adjustment component to adjust a height of the ion beam along the first direction when the beam current profile indicates the beam height is below a threshold.
摘要翻译：用于控制离子注入机中的离子束的系统包括检测器，用于沿垂直于离子束传播方向的第一方向执行离子束的多个束电流测量。该系统还包括分析部件，用于基于多个束电流测量来确定光束电流分布，所述光束电流分布包括沿着第一方向的束电流的变化; 以及当光束电流分布指示光束高度低于阈值时调节离子束沿着第一方向的高度的调节部件。

40. 发明授权

US08986458B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08986458B2
公开(公告)日：2015-03-24
申请号：US14233669
申请日：2013-06-20
申请人： Chugai Ro Co., Ltd.
发明人： Shinya Akano
IPC分类号： C23C16/00 , C23C14/00 , C23F1/00 , H01L21/306 , H01J37/32 , C23C14/32 , C23C14/54 , H05H1/26
CPC分类号： H01J37/32669 , C23C14/32 , C23C14/54 , H01J37/32009 , H01J37/32357 , H01J37/32651 , H01J37/3266 , H05H1/26
摘要： The present invention provides a plasma processing apparatus capable of bringing plasma close to a processing target and separating the plasma from the processing target. The plasma processing apparatus 1 according to the present invention has a chamber internally having a holding space 2a in which a processing target object 5 is held, and a plasma space 2b in which plasma is to be formed, a plasma gun 3 for emitting electrons into the plasma space 2b to form the plasma, and at least one pair of position-adjustable opposed magnets 4 for forming a magnetic flux passing across the chamber 2, between the holding space 2a and the plasma space 2b.
摘要翻译：本发明提供一种等离子体处理装置，其能够使等离子体接近处理对象，并将等离子体与处理对象物分离。根据本发明的等离子体处理装置1具有内部具有保持处理对象物5的保持空间2a和要形成等离子体的等离子体空间2b的室，用于发射电子的等离子体枪3 用于形成等离子体的等离子体空间2b和用于在保持空间2a和等离子体空间2b之间形成通过室2的磁通的至少一对位置可调的相对磁体4。

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