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31. 发明申请

US20070090092A1 Method and device for removing layers in some areas of glass plates 失效
标题翻译：用于去除玻璃板某些区域中的层的方法和装置
公开(公告)号：US20070090092A1
公开(公告)日：2007-04-26
申请号：US10561008
申请日：2004-06-16
申请人： Helmut Forstner , Alfred Hofrichter
发明人： Helmut Forstner , Alfred Hofrichter
IPC分类号： B05D3/00 , B29C71/04 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32366 , B08B7/0035 , C03C15/00 , C03C17/002 , C03C23/006 , C03C23/0075 , C03C2218/328 , C03C2218/33 , C23F4/00
摘要： Substrates with a coating, in particular a metal-containing coating, are freed of coating in some regions, in particular in the edge region, with the aid of plasma directed onto the coated side of the substrate. The width of the region in which the coating is removed may be set such that plasma from a number of plasma heads arranged next to one another in a row or from one plasma head with variable cross section is directed onto the substrate in the desired width from which the coating is to be removed, wherein the plasma head or heads is/are suitably aligned with respect to the substrate and/or the required number of plasma heads in each case are set in operation. It is also possible to remove coatings only partially in terms of the layer thickness.
摘要翻译：具有涂层，特别是含金属的涂层的衬底在一些区域，特别是在边缘区域中借助于等离子体被引导到衬底的涂覆侧上而没有被涂覆。去除涂层的区域的宽度可以被设定为使得排列成一排彼此相邻或者具有可变截面的一个等离子体头的多个等离子体头的等离子体以期望的宽度被引导到基板上其中涂层将被去除，其中等离子体头部或头部相对于衬底被适当地对准和/或在每种情况下所需数量的等离子体头被设置在操作中。也可以仅根据层厚度去除涂层。

32. 发明申请

US20060286702A1 METHOD OF MANUFACTURING A TRANSPARENT ELEMENT INCLUDING TRANSPARENT ELECTRODES 有权
标题翻译：制造透明元件的方法，包括透明电极
公开(公告)号：US20060286702A1
公开(公告)日：2006-12-21
申请号：US11424700
申请日：2006-06-16
申请人： Gian-Carlo Poli , Joachim Grupp
发明人： Gian-Carlo Poli , Joachim Grupp
IPC分类号： H01L21/00 , H01L33/00 , H01L21/44
CPC分类号： H01L31/022466 , C03C17/23 , C03C17/2453 , C03C17/36 , C03C17/3671 , C03C2217/231 , C03C2217/94 , C03C2217/948 , C03C2218/154 , C03C2218/33 , H01L31/022475 , H01L31/1884 , Y02E10/50
摘要： Method of manufacturing a transparent element including transparent electrodes, said method including the steps of: depositing over at least one part of the surface of a transparent substrate (1) a layer (2) of a conductive oxide that is also transparent, and structuring in said conductive oxide layer (2) at least one electrode (4) connected to a contact pad (8) by a conductive path (6) by removing said oxide along the contour of the desired electrode (4, 6, 8) so as to create a trimming line (10) which will insulate the part (12) of the conductive oxide layer (2), which forms the electrode (4, 6, 8) and which is to be brought to an electric potential, from the rest (14) of the conductive oxide layer (2) which will be floating, this method being wherein at least a second trimming line (10′) is made around the first (10).
摘要翻译：制造包括透明电极的透明元件的方法，所述方法包括以下步骤：在透明衬底（1）的表面的至少一部分上沉积也是透明的导电氧化物层（2），并且在所述导电氧化物层（2）通过沿所需电极（4,6,8）的轮廓除去所述氧化物，通过导电路径（6）连接到接触焊盘（8）的至少一个电极（4），以便形成修整线（10），该修整线（10）将形成电极（4,6,8）并且将被引导到电位的导电氧化物层（2）的部分（12）与其余部分所述导电氧化物层（2）的浮动状态（14），其中至少第二修整线（10'）围绕第一（10）形成。

33. 发明申请

US20060263606A1 Glass texturing 审中-公开
标题翻译：玻璃纹理
公开(公告)号：US20060263606A1
公开(公告)日：2006-11-23
申请号：US10553030
申请日：2004-03-19
申请人： Armin Aberle , Per Widenborg , Natapol Chuangsuwanich
发明人： Armin Aberle , Per Widenborg , Natapol Chuangsuwanich
IPC分类号： B05D5/12 , B05D3/02 , B05D1/40 , B32B17/00
CPC分类号： C03C17/36 , C03C17/09 , C03C17/22 , C03C17/3435 , C03C17/3482 , C03C17/3607 , C03C17/3626 , C03C17/3636 , C03C17/3649 , C03C17/3678 , C03C2204/08 , C03C2217/252 , C03C2217/282 , C03C2218/151 , C03C2218/153 , C03C2218/32 , C03C2218/33 , C03C2218/355 , C03C2218/365 , H01L31/02366 , Y02E10/50 , Y10T428/315
摘要： A method of texturing a glass surface is disclosed, the method comprising the steps of coating the glass surface with a material film, stimulating a reaction at the interface between the glass and the material film resulting in the formation of reaction products at the interface, and removing the material film and the reaction products from the glass surface. In a preferred embodiment, an aluminium film around 500 nm thick aluminosilicate is coated onto the glass and the stimulation is by heating. The aluminium reacts with the silica at temperatures between 500° C. and 630° C. to form reaction products that are then removed, along with the film, by etching with phosphoric acid. A further etch using HF/HNO3 may also be employed. The method is particularly useful in etching glass substrates intended for use in photovoltaic devices.
摘要翻译：公开了一种纹理化玻璃表面的方法，该方法包括以下步骤：用玻璃表面涂覆材料膜，在玻璃和材料膜之间的界面处刺激反应，从而在界面处形成反应产物;以及从玻璃表面去除材料膜和反应产物。在优选实施例中，将约500nm厚的铝硅酸盐的铝膜涂覆在玻璃上，并通过加热进行刺激。铝在500℃和630℃之间的温度下与二氧化硅反应形成反应产物，然后通过用磷酸蚀刻与膜一起除去。还可以使用使用HF / HNO 3的另外的蚀刻。该方法在蚀刻用于光伏器件的玻璃衬底中特别有用。

34. 发明申请

US20060231525A1 Method for manufacturing porous structure and method for forming pattern 有权
公开(公告)号：US20060231525A1
公开(公告)日：2006-10-19
申请号：US11455916
申请日：2006-06-20
申请人： Koji Asakawa , Toshiro Hiraoka , Yoshihiro Akasaka , Yasuyuki Hotta
发明人： Koji Asakawa , Toshiro Hiraoka , Yoshihiro Akasaka , Yasuyuki Hotta
IPC分类号： C23F1/00 , B31D3/00 , B44C1/22
CPC分类号： C08J9/26 , B82Y10/00 , B82Y30/00 , C03C17/007 , C03C2217/425 , C03C2217/479 , C03C2218/33 , C08J2333/12 , C08J2383/16 , C23F1/30 , G03F7/0002 , G11B5/74 , G11B5/743 , G11B5/855 , G11B2005/0029 , H01G11/30 , H01G11/56 , H01J9/02 , H01J9/025 , H01L21/02118 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02348 , H01L21/0337 , H01L21/31695 , H01M2/145 , H01M2/1653 , H01M4/131 , H01M4/133 , H01M4/8605 , H01M4/96 , H01M8/0234 , H01M8/0245 , H01M8/026 , H01M8/1011 , H01M10/0525 , Y02E60/13 , Y02E60/523 , Y02P70/56 , Y10S438/945 , Y10S438/947 , Y10S977/90 , Y10T428/24149
摘要： A pattern forming material contains a block copolymer or graft copolymer and forms a structure having micro polymer phases, in which, with respect to at least two polymer chains among polymer chains constituting the block copolymer or graft copolymer, the ratio between N/(Nc−No) values of monomer units constituting respective polymer chains is 1.4 or more, where N represents total number of atoms in the monomer unit, Nc represents the number of carbon atoms in the monomer unit, No represents the number of oxygen atoms in the monomer unit.

35. 发明授权

US07090784B2 Method for manufacturing porous structure and method for forming pattern 有权
公开(公告)号：US07090784B2
公开(公告)日：2006-08-15
申请号：US10347956
申请日：2003-01-22
申请人： Koji Asakawa , Toshiro Hiraoka , Yoshihiro Akasaka , Yasuyuki Hotta
发明人： Koji Asakawa , Toshiro Hiraoka , Yoshihiro Akasaka , Yasuyuki Hotta
IPC分类号： C08J9/26
CPC分类号： C08J9/26 , B82Y10/00 , B82Y30/00 , C03C17/007 , C03C2217/425 , C03C2217/479 , C03C2218/33 , C08J2333/12 , C08J2383/16 , C23F1/30 , G03F7/0002 , G11B5/74 , G11B5/743 , G11B5/855 , G11B2005/0029 , H01G11/30 , H01G11/56 , H01J9/02 , H01J9/025 , H01L21/02118 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02348 , H01L21/0337 , H01L21/31695 , H01M2/145 , H01M2/1653 , H01M4/131 , H01M4/133 , H01M4/8605 , H01M4/96 , H01M8/0234 , H01M8/0245 , H01M8/026 , H01M8/1011 , H01M10/0525 , Y02E60/13 , Y02E60/523 , Y02P70/56 , Y10S438/945 , Y10S438/947 , Y10S977/90 , Y10T428/24149
摘要： A pattern forming material contains a block copolymer or graft copolymer and forms a structure having micro polymer phases, in which, with respect to at least two polymer chains among polymer chains constituting the block copolymer or graft copolymer, the ratio between N/(Nc-No) values of monomer units constituting respective polymer chains is 1.4 or more, where N represents total number of atoms in the monomer unit, Nc represents the number of carbon atoms in the monomer unit, No represents the number of oxygen atoms in the monomer unit.

36. 发明申请

US20060043069A1 Mirror etching solution 审中-公开
标题翻译：镜面蚀刻溶液
公开(公告)号：US20060043069A1
公开(公告)日：2006-03-02
申请号：US10711183
申请日：2004-08-31
申请人： Timothy Poe
发明人： Timothy Poe
IPC分类号： B44C1/22
CPC分类号： B44F1/045 , B44C1/227 , C03C15/00 , C03C17/38 , C03C17/42 , C03C2218/33 , C25D5/48 , C25D7/08
摘要： Mirror etching solution is a solution of water and sulfated potash and when applied to the electroplated surface on the back, or non-reflective mirror surface effectively simulates the appearance of a tarnished or deteriorated “antique” mirror. The electroplated surface applied to the back of new mirrors is normally sealed with a painted protective coating. In order to etch the electroplated surface on new mirrors, the painted protective coating must be stripped with paint and varnish remover exposing the electroplated surface. After mirror etching solution is applied to the electroplated surface and the desired effect has been achieved, the electroplated surface on the back of the mirror may be sealed with a new protective painted coating. New mirrors that have been electroplated and not yet sealed with a painted protective coating may be treated with mirror etching solution before sealing.
摘要翻译：镜面蚀刻溶液是水和硫酸钾的溶液，当应用于背面的电镀表面时，或非反光镜面有效地模拟了褪色或变质的“古董”镜子的外观。通常用涂漆的保护涂层密封涂有新镜子背面的电镀表面。为了蚀刻新镜子上的电镀表面，必须用油漆和清漆去除剂将涂漆的保护涂层剥离，以暴露电镀表面。将镜面蚀刻溶液施加到电镀表面并达到所期望的效果之后，可以用新的保护涂层密封反射镜背面的电镀表面。已经电镀并未用涂漆的保护涂层密封的新镜子可以在密封之前用镜面蚀刻溶液处理。

37. 发明申请

US20060000492A1 Forming a passivating aluminum fluoride layer and removing same for use in semiconductor manufacture 失效
标题翻译：形成钝化的氟化铝层，并将其除去用于半导体制造
公开(公告)号：US20060000492A1
公开(公告)日：2006-01-05
申请号：US10448127
申请日：2003-08-27
申请人： Melvin Carter
发明人： Melvin Carter
IPC分类号： C03C23/00
CPC分类号： C03C15/00 , C03C2218/33 , C11D7/10 , C11D7/3209 , C11D7/3218 , C11D7/34 , C11D11/0047 , H01L21/02063 , H01L21/02071
摘要： A composition for the cleaning of residues from substrates can contain from about 0.01 percent by weight to about 5 percent by weight of one or more fluoride compounds, from about 20 percent by weight to about 50 percent by weight water, from about 20 percent by weight to about 80 percent by weight of an organic amide solvent and from 0 to about 50 weight percent of an organic sulfoxide solvent. The composition can have a pH between about 7 and about 10, alternately from greater than 8 to about 10. Additionally, the composition optionally can contain corrosion inhibitors, chelating agents, surfactants, acids, and/or bases. In use of the composition, a substrate can advantageously be contacted with the composition for a time and at a temperature that permits cleaning of the substrate.
摘要翻译：用于清洁底物残留物的组合物可含有约0.01重量％至约5重量％的一种或多种氟化物，约20重量％至约50重量％的水，约20重量％至约80重量％的有机酰胺溶剂和0至约50重量％的有机亚砜溶剂。组合物可以具有约7至约10的pH，或者大于8至约10.另外，组合物任选地可以含有腐蚀抑制剂，螯合剂，表面活性剂，酸和/或碱。在组合物的使用中，基底可有利地与组合物接触一段时间并且在允许清洗基底的温度下。

38. 发明授权

US06974549B2 Method for forming fine grooves and stamper and structure with fine grooves 失效
标题翻译：用于形成细槽和压模的方法以及具有细槽的结构
公开(公告)号：US06974549B2
公开(公告)日：2005-12-13
申请号：US10320683
申请日：2002-12-17
申请人： Masaru Ohgaki
发明人： Masaru Ohgaki
IPC分类号： G11B7/26 , B81C1/00 , C03C17/22 , C03C17/34 , G02B6/12 , G02B6/124 , G02B6/13 , C23F1/00
CPC分类号： G02B6/13 , B81C1/0046 , B81C2201/036 , C03C17/225 , C03C17/3435 , C03C17/3482 , C03C2218/33 , C03C2218/34 , G02B6/124 , G02B2006/12038 , G02B2006/12061 , G02B2006/12107 , G02B2006/12173 , G02B2006/12176
摘要： A method for forming fine grooves including forming a first silicon-nitride layer on a substrate, forming a first poly-silicon layer on the first silicon-nitride layer, forming a second silicon-nitride layer on the first poly-silicon layer, patterning the second silicon-nitride layer, etching the first poly-silicon layer using the patterned second silicon-nitride layer as a mask, forming at least one patterned oxidized portion of the first poly-silicon layer by oxidizing the substrate, first silicon-nitride layer, etched first poly-silicon layer, and patterned second silicon-nitride layer, removing the patterned second silicon-nitride layer and etched first poly-silicon layer such that the first silicon-nitride layer and at least one patterned oxidized portion of the first poly-silicon layer remain on the substrate, and forming a plurality of fine grooves over the substrate by plasma etching the first silicon-nitride layer using the at least one patterned oxidized portion of the first poly-silicon layer as a mask.
摘要翻译：一种用于形成细槽的方法，包括在基板上形成第一氮化硅层，在第一氮化硅层上形成第一多晶硅层，在第一多晶硅层上形成第二氮化硅层，使用所述图案化的第二氮化硅层作为掩模蚀刻所述第一多晶硅层，通过氧化所述衬底，形成所述第一多晶硅层的至少一个图案化氧化部分，第一氮化硅层，蚀刻的第一多晶硅层和图案化的第二氮化硅层，去除图案化的第二氮化硅层和蚀刻的第一多晶硅层，使得第一氮化硅层和第一多晶硅层的至少一个图案化氧化部分，硅层保留在衬底上，并且通过使用第一氮化硅层的至少一个图案化氧化部分等离子体蚀刻第一氮化硅层来在衬底上形成多个细槽多晶硅层作为掩模。

39. 发明申请

US20050227152A1 Double-metal EUV mask absorber 有权
公开(公告)号：US20050227152A1
公开(公告)日：2005-10-13
申请号：US11144550
申请日：2005-06-03
申请人： Pei-Yang Yan , Hsing-Chien Ma , Scott Chegwidden
发明人： Pei-Yang Yan , Hsing-Chien Ma , Scott Chegwidden
IPC分类号： C03C17/36 , G03C5/00 , G03F9/00 , G21K5/00
CPC分类号： C03C17/3618 , C03C17/36 , C03C17/3626 , C03C17/3649 , C03C17/3665 , C03C2217/734 , C03C2218/33
摘要： A composite extreme ultraviolet light (EUV) mask absorber structure and method are disclosed to address the structural and processing requirements of EUV lithography. A first mask absorber layer anisotropically etched with minimal etch bias at a relatively fast etch rate, is combined with a highly-selective second mask absorber layer, to produce a mask absorber with desirable hybrid performance properties.

40. 发明申请

US20050109732A1 Method for manufacturing organic electroluminescent element and apparatus using the method 审中-公开
标题翻译：使用该方法制造有机电致发光元件的方法和装置
公开(公告)号：US20050109732A1
公开(公告)日：2005-05-26
申请号：US10994315
申请日：2004-11-23
申请人： Tatsuya Yoshizawa
发明人： Tatsuya Yoshizawa
IPC分类号： H05B33/10 , C03C17/42 , H01L21/3213 , H01L51/50 , H01L51/52 , H01L51/56 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01L51/56 , C03C17/42 , C03C2218/33 , H01L21/32134 , H01L51/5206
摘要： A method for manufacturing an organic electroluminescent element whose emission property is stable for a long time and a manufacturing apparatus using the method. The organic EL element manufacturing method includes an anode layer formation process for forming an anode layer on a substrate, an organic functional layer formation process for forming an organic functional layer having at least a light emission layer on the anode layer, a cathode layer formation process for forming a cathode layer on the organic functional layer, and a sealing process for sealing an organic electroluminescence element formed of the anode layer, the organic functional layer, and the cathode layer with a sealing member. The anode layer formation process includes an anode film formation step of forming the anode layer on the substrate, a step of disposing a resist on the anode layer, an etching step of performing etching processing on the anode layer by using the resist as a mask, a resist removal step of removing the resist by dry ashing processing after the etching step, and a surface treatment step of performing a surface treatment on the anode layer after the resist removal step. The anode layer is not exposed to the air after the resist removal step.
摘要翻译：一种发光性能长时间稳定的有机电致发光元件的制造方法以及使用该方法的制造装置。有机EL元件制造方法包括在基板上形成阳极层的阳极层形成工序，在阳极层上形成至少具有发光层的有机功能层的有机功能层形成工序，阴极层形成工序用于在有机功能层上形成阴极层，以及用密封构件密封由阳极层，有机功能层和阴极层形成的有机电致发光元件的密封工艺。阳极层形成工艺包括在基板上形成阳极层的阳极膜形成步骤，在阳极层上设置抗蚀剂的步骤，通过使用抗蚀剂作为掩模在阳极层上进行蚀刻处理的蚀刻步骤，在蚀刻步骤之后通过干燥灰化处理去除抗蚀剂的抗蚀剂去除步骤，以及在抗蚀剂去除步骤之后对阳极层进行表面处理的表面处理步骤。在抗蚀剂去除步骤之后，阳极层不暴露于空气。

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