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31. 发明申请

US20090299701A1 METHOD FOR DESIGNING SHOWER PLATE FOR PLASMA CVD APPARATUS 有权
标题翻译：用于设计等离子体CVD装置的淋浴板的方法
公开(公告)号：US20090299701A1
公开(公告)日：2009-12-03
申请号：US12039699
申请日：2008-06-02
申请人： Satoshi TAKAHASHI
发明人： Satoshi TAKAHASHI
IPC分类号： G06F17/50
CPC分类号： H01J37/32541 , C23C16/45565 , H01J37/3244
摘要： A method of designing a shower plate for a plasma CVD apparatus includes (a) providing a shower plate having a convex surface configured by a convex equation; (b) forming a film on a wafer using the shower plate in the plasma CVD apparatus; (c) determining a distribution of thickness of the film formed on the wafer by dividing a diametrical cross section of the film into multiple regions; (d) determining at least one secondary equation; and (e) designing a surface configuration of the shower plate by overlaying the secondary equation on the convex equation.
摘要翻译：设置等离子体CVD装置用喷淋板的方法包括：（a）提供具有由凸方程构成的凸面的喷淋板; （b）使用等离子体CVD装置中的喷淋板在晶片上形成膜; （c）通过将膜的直径截面分成多个区域来确定在晶片上形成的膜的厚度分布; （d）确定至少一个次方程; 和（e）通过将二次方程叠加在凸方程上来设计淋浴板的表面构造。

32. 发明授权

US07618226B2 Semiconductor substrate transfer apparatus and semiconductor substrate processing apparatus equipped with the same 有权
标题翻译：半导体基板转印装置和配备有该基板的半导体基板处理装置
公开(公告)号：US07618226B2
公开(公告)日：2009-11-17
申请号：US11445035
申请日：2006-06-01
申请人： Masahiro Takizawa , Masaei Suwada , Takashi Wada
发明人： Masahiro Takizawa , Masaei Suwada , Takashi Wada
IPC分类号： B65B69/00
CPC分类号： H01L21/67265 , H01L21/67276 , H01L21/67781
摘要： A semiconductor substrate transfer apparatus for transferring semiconductor substrates from a first container to a second container, includes: multiple end effectors; at least one robot arm with which the multiple end effectors are independently rotatably joined; and a controller storing software including instructions to judge which end effector or end effectors in the multiple end effectors are to be selected based on a distribution status of substrates stored in the first and second containers and to rotate the selected end effector(s) for unloading a substrate or substrates from the first container and loading the substrate or substrates to the second container.
摘要翻译：一种用于将半导体衬底从第一容器转移到第二容器的半导体衬底传送装置，包括：多个端部执行器; 至少一个机器人手臂，多个端部执行器可独立地可旋转地连接; 以及控制器，其存储软件，其包括用于基于存储在所述第一和第二容器中的基板的分布状态来判断所述多个末端执行器中的哪个末端执行器或末端执行器被选择的指令，并且旋转所选择的末端执行器以用于卸载来自第一容器的衬底或衬底，并将衬底或衬底装载到第二容器。

33. 发明申请

US20090252580A1 WAFER PROCESSING APPARATUS WITH WAFER ALIGNMENT DEVICE 有权
标题翻译：具有水平对准装置的波浪加工设备
公开(公告)号：US20090252580A1
公开(公告)日：2009-10-08
申请号：US12062419
申请日：2008-04-03
申请人： Masahiro Takizawa , Masaei Suwada , Masayuki Akagawa
发明人： Masahiro Takizawa , Masaei Suwada , Masayuki Akagawa
IPC分类号： H01L21/67
CPC分类号： H01L21/68707 , H01L21/681 , Y10S414/135 , Y10S414/136
摘要： A semiconductor-processing apparatus includes: a wafer handling chamber; a wafer processing chamber; a wafer handling device; a first photosensor disposed in the wafer handling chamber in front of the wafer processing chamber at a position where the wafer partially blocks light received by the first photosensor at a ready-to-load position and substantially entirely blocks light received by the first photosensor when the wafer moves from the ready-to-load position toward the wafer processing chamber in the x-axis direction; and a second photosensor disposed in the wafer handling chamber in front of the wafer processing chamber at a position where the wafer does not block light received by the second photosensor at the ready-to-load position and partially blocks light received by the second photosensor when the wafer moves from the ready-to-load position toward the wafer processing chamber in the x-axis direction.
摘要翻译：一种半导体处理装置，包括：晶片处理室; 晶圆处理室; 晶片处理装置; 第一光电传感器，其设置在晶片处理室前面的晶片处理室中，在晶片处理室的位置处，晶片部分地阻挡由第一光电传感器接收的光在准备加载位置，并且当基板完全阻挡由第一光电传感器接收的光时晶片从准备位置朝向晶片处理室在x轴方向移动; 以及第二光电传感器，其在所述晶片处理室的前方设置在所述晶片处理室的位置处，所述晶片处理室在所述晶片不会阻挡由所述第二光电传感器在所述准备加载位置接收的光的位置，并且部分地阻挡由所述第二光电传感器接收的光晶片在准备加载位置朝向晶片处理室沿x轴方向移动。

34. 发明申请

US20090200251A1 CLAMPING MECHANISM FOR SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件钳位机制
公开(公告)号：US20090200251A1
公开(公告)日：2009-08-13
申请号：US12027767
申请日：2008-02-07
申请人： Akira SHIMIZU , Akira WATANABE
发明人： Akira SHIMIZU , Akira WATANABE
IPC分类号： H01L21/67 , C23C16/455
CPC分类号： C23C16/45544 , C23C16/4585 , H01L21/68721
摘要： A clamping mechanism for a semiconductor substrate includes: a C-shaped pickup plate; a susceptor top plate having a periphery adapted to receive and support an inner periphery portion of the C-shaped pickup plate thereon; and a clamp comprising (i) a top ring portion for clamping the substrate by sandwiching a periphery of the substrate between the top ring portion and the susceptor top plate and (ii) a pickup plate supporting portion adapted to support an outer periphery portion of the C-shaped pickup plate, wherein the C-shaped pickup plate is movable between the top ring portion and the pickup plate supporting portion, and the clamp is movable upward together with the C-shaped pickup plate and the susceptor top plate.
摘要翻译：一种用于半导体衬底的夹持机构包括：C形拾取板; 感受器顶板，其具有适于在其上容纳和支撑C形拾取板的内周部分的周边; 以及夹具，其包括（i）顶环部分，用于通过将所述基板的周边夹在所述顶环部分和所述基座顶板之间来夹持所述基板，以及（ii）拾取板支撑部分，其适于支撑所述基板的外周部分 C形拾取板，其中C形拾取板可在顶环部分和拾取板支撑部分之间移动，并且夹具可与C形拾取板和基座顶板一起向上移动。

35. 发明授权

US07571732B2 Ignition control of remote plasma unit 有权
标题翻译：远程等离子体单元的点火控制
公开(公告)号：US07571732B2
公开(公告)日：2009-08-11
申请号：US11390832
申请日：2006-03-28
申请人： Masahiro Takizawa , Takashi Wada , Satoru Noguchi
发明人： Masahiro Takizawa , Takashi Wada , Satoru Noguchi
IPC分类号： B08B6/00
CPC分类号： B08B7/0035 , C23C16/4405 , C23C16/52 , H01J37/32357 , H01J37/32862
摘要： A method of maintaining a remote plasma unit for cleaning a semiconductor-processing apparatus includes: (i) detecting if the semiconductor-processing apparatus is in an idle state; (ii) if the idle state is detected, igniting the remote plasma unit for cleaning the semiconductor-processing apparatus after a lapse of a given time period; (iii) detecting if the remote plasma unit is ignited in step (ii); and (iv) if the remote plasma unit is not ignited in step (ii), retrying ignition of the remote plasma unit.
摘要翻译：保持用于清洁半导体处理装置的远程等离子体单元的方法包括：（i）检测半导体处理装置是否处于空闲状态; （ii）如果检测到空闲状态，则在经过给定时间段之后点燃远程等离子体单元以清洁半导体处理装置; （iii）在步骤（ii）中检测远程等离子体单元是否点燃; 和（iv）如果远程等离子体单元在步骤（ii）中未点燃，则重试远程等离子体单元的点火。

36. 发明授权

US07560144B2 Method of stabilizing film quality of low-dielectric constant film 有权
标题翻译：稳定低介电常数薄膜质量的方法
公开(公告)号：US07560144B2
公开(公告)日：2009-07-14
申请号：US11086598
申请日：2005-03-22
申请人： Atsuki Fukazawa , Kiyoto Itoh , Tsunayuki Kimura , Nobuo Matsuki
发明人： Atsuki Fukazawa , Kiyoto Itoh , Tsunayuki Kimura , Nobuo Matsuki
IPC分类号： H05H1/24
CPC分类号： H01L21/31633 , C23C16/30 , C23C16/5096 , H01J37/32082 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/3122
摘要： A method of forming a film having a low dielectric constant, comprises the steps of: placing a substrate between an upper electrode and a lower electrode inside a reaction chamber, introducing a silicon-containing hydrocarbon compound source gas, an additive gas, and an inert gas into a space between the upper and lower electrodes by controlling a gas flow ratio, generating a plasma by applying RF power to the space between the upper and lower electrodes in a state in which an interval between the upper electrode and the substrate is narrower in the vicinity of a center of the substrate than that in the vicinity of its periphery, and forming a film having a low dielectric constant on the substrate at a deposition rate of less than approx. 790 nm/min by controlling a flow rate of the process gas.
摘要翻译：一种形成具有低介电常数的膜的方法，包括以下步骤：将反应室内的上部电极和下部电极之间的基板放置在反应室内，引入含硅烃化合物源气体，添加气体和惰性气体通过控制气体流量比进入上部和下部电极之间的空间，通过在上部电极和基底之间的间隔较窄的状态下对上部和下部电极之间的空间施加RF功率来产生等离子体衬底的中心附近比其周围附近，并且以小于约的沉积速率在衬底上形成具有低介电常数的膜。通过控制处理气体的流量来达到790nm / min。

37. 发明申请

US20090156017A1 METHOD FOR FORMING DIELECTRIC FILM USING SILOXANE-SILAZANE MIXTURE 有权
标题翻译：使用硅氧烷 - 硅酸盐混合物形成介电膜的方法
公开(公告)号：US20090156017A1
公开(公告)日：2009-06-18
申请号：US11955766
申请日：2007-12-13
申请人： Atsuki FUKAZAWA , Woo Jin LEE , Nobuo MATSUKI
发明人： Atsuki FUKAZAWA , Woo Jin LEE , Nobuo MATSUKI
IPC分类号： H01L21/31
CPC分类号： C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02216 , H01L21/02222 , H01L21/02274 , H01L21/02315 , H01L21/02337 , H01L21/02348 , H01L21/3105 , H01L21/3122 , H01L21/3125 , H01L21/31612
摘要： A method of forming a dielectric film, includes: introducing a siloxane gas essentially constituted by Si, O, C, and H and a silazane gas essentially constituted by Si, N, H, and optionally C into a reaction chamber where a substrate is placed; depositing a siloxane-based film including Si—N bonds on the substrate by plasma reaction; and annealing the siloxane-based film on the substrate in an annealing chamber to remove Si—N bonds from the film.
摘要翻译：形成电介质膜的方法包括：将基本上由Si，O，C和H构成的硅氧烷气体和基本上由Si，N，H和任选的C组成的硅氮烷气体引入放置基板的反应室中 ; 通过等离子体反应在衬底上沉积包含Si-N键的硅氧烷基膜; 并在退火室中退火基板上的硅氧烷基膜，以从膜中除去Si-N键。

38. 发明申请

US20090155997A1 METHOD FOR FORMING Ta-Ru LINER LAYER FOR Cu WIRING 有权
标题翻译：用于形成铜线的Ta-Ru衬层的方法
公开(公告)号：US20090155997A1
公开(公告)日：2009-06-18
申请号：US11955275
申请日：2007-12-12
申请人： Hiroshi SHINRIKI , Daekyun JEONG
发明人： Hiroshi SHINRIKI , Daekyun JEONG
IPC分类号： H01L21/768
CPC分类号： C23C16/45542 , C23C16/045 , C23C16/06 , H01L21/28562 , H01L21/76846 , H01L21/76862 , H01L21/76873 , H01L23/53238 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a Ta—Ru metal liner layer for Cu wiring includes: (i) conducting atomic deposition of Ta X times, each atomic deposition of Ta being accomplished by a pulse of hydrogen plasma, wherein X is an integer such that a surface of an underlying layer is not covered with Ta particles; (ii) after step (i), conducting atomic deposition of Ru Y times, each atomic deposition of Ru being accomplished by a pulse of hydrogen plasma, wherein Y is an integer such that the Ta particles are not covered with Ru particles; and (iii) repeating steps (i) and (ii) Z times, thereby forming a Ta—Ru metal liner layer on a Cu wiring substrate.
摘要翻译：形成Cu布线的Ta-Ru金属衬垫层的方法包括：（i）进行Ta X的原子沉积，Ta的每个原子沉积由氢等离子体的脉冲完成，其中X是整数，使得表面的下层不被Ta颗粒覆盖; （ii）在步骤（i）之后，进行Ru Y次的原子沉积，Ru的每个原子沉积由氢等离子体的脉冲实现，其中Y是使Ta颗粒不被Ru颗粒覆盖的整数; 和（iii）重复步骤（i）和（ii）Z次，从而在Cu布线基板上形成Ta-Ru金属衬垫层。

39. 发明授权

US07476618B2 Selective formation of metal layers in an integrated circuit 有权
标题翻译：在集成电路中选择性形成金属层
公开(公告)号：US07476618B2
公开(公告)日：2009-01-13
申请号：US11254071
申请日：2005-10-18
申请人： Olli V. Kilpelä , Wonyong Koh , Hannu A. Huotari , Marko Tuominen , Miika Leinikka
发明人： Olli V. Kilpelä , Wonyong Koh , Hannu A. Huotari , Marko Tuominen , Miika Leinikka
IPC分类号： H01L21/44
CPC分类号： C23C16/18 , C23C16/45525 , H01L21/28562 , H01L21/32051 , H01L21/76814 , H01L21/76834 , H01L21/76843 , H01L21/76849
摘要： A method for enhancing the reliability of copper interconnects and/or contacts, such as the bottom of vias exposing top surfaces of buried copper, or at the top of copper lines just after CMP. The method comprises contacting the exposed copper surface with a vapor phase compound of a noble metal and selectively forming a layer of the noble metal on the exposed copper surface, either by a copper replacement reaction or selective deposition (e.g., ALD or CVD) of the noble metal.
摘要翻译：一种用于增强铜互连和/或触点的可靠性的方法，例如暴露铜的顶表面的通孔的底部，或刚好在CMP之后的铜线的顶部。该方法包括使暴露的铜表面与贵金属的气相化合物接触，并通过铜置换反应或选择性沉积（例如，ALD或CVD）选择性地在暴露的铜表面上形成贵金属层贵金属。

40. 发明申请

US20080318417A1 METHOD OF FORMING RUTHENIUM FILM FOR METAL WIRING STRUCTURE 审中-公开
标题翻译：形成金属接线结构的薄膜的方法
公开(公告)号：US20080318417A1
公开(公告)日：2008-12-25
申请号：US12205640
申请日：2008-09-05
申请人： Hiroshi Shinriki , Hiroaki Inoue
发明人： Hiroshi Shinriki , Hiroaki Inoue
IPC分类号： H01L21/441
CPC分类号： H01L23/53238 , C23C16/02 , C23C16/0245 , C23C16/18 , C23C16/36 , C23C16/45542 , H01L21/28556 , H01L21/28562 , H01L21/76814 , H01L21/76843 , H01L21/76846 , H01L21/76873 , H01L23/53295 , H01L2221/1089 , H01L2924/0002 , Y10T428/12875 , Y10T428/12903 , Y10T428/265 , H01L2924/00
摘要： A method of depositing a ruthenium(Ru) thin film on a substrate in a reaction chamber, includes: (i) supplying a gas of a ruthenium precursor into the reaction chamber so that the gas of the ruthenium precursor is adsorbed onto the substrate, wherein the ruthenium precursor a ruthenium complex contains a non-cyclic dienyl; (ii) supplying an excited reducing gas into the reaction chamber to activate the ruthenium precursor adsorbed onto the substrate; and (iii) repeating steps (i) and (ii), thereby forming a ruthenium thin film on the substrate.
摘要翻译：在反应室中的基板上沉积钌（Ru）薄膜的方法包括：（i）将钌前驱体的气体供应到反应室中，使得钌前驱体的气体被吸附到基底上，其中钌前体钌络合物含有非环状二烯基; （ii）将激发的还原气体供应到反应室中以活化吸附到基底上的钌前体; 和（iii）重复步骤（i）和（ii），从而在基材上形成钌薄膜。

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